Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition

A high growth rate fabrication of diamond-like carbon(DLC)films at room temperature was achieved by helicon wave plasma chemical vapor deposition(HWP-CVD)using Ar/CH_4gas mixtures.The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy.The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe.The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed.The growth rate of the DLC films reaches a maximum value of 54μm h~(-1)at the CH_4flow rate of 85 sccm,which is attributed to the higher plasma density during the helicon wave plasma discharge.The CH and H_αradicals play an important role in the growth of DLC films.The results show that the H_αradicals are beneficial to the formation and stabilization of C=C bond from sp~2to sp~3.     

A study of the blue photoluminescence emission from thermally-grown, Si-implanted SiO2 films after short-time annealing

Thermal SiO₂ films have been implanted with Si⁺ ions using double-energy implants (200 + 100 keV) at a substrate temperature of about −20°C to total doses in the range 1.6 × 10¹⁶−1.6 × 10¹⁷ cm⁻² followed by short-time thermal processing, in order to form a Si nanostructure capable of yielding blue photoluminescence (PL). The intensity and the peak position of the PL band have been investigated as a function of ion dose, manner of heat treatment, anneal time and anneal temperature. For the formation of blue PL emitting centres, optimum processing conditions in terms of excess Si concentration and overall thermal budget are mandatory. The nature of the observed blue emission is discussed.     

Ion beam synthesis and recrystallization of amorphous SiGe/SiC structures

Si_1−xGe_x amorphous layers implanted with different doses of carbon (between 5 × 10¹⁵ and 2 × 10¹⁷ cm⁻² and annealed at 700°C and 900°C have been analyzed by Raman and Infrared spectroscopies, electron microscopy and Auger electron spectroscopy. The obtained data show the synthesis of amorphous SiC by implanting at the highest doses. In these cases, recrystallization only occurs at the highest annealing temperature (900°C). The structure of the synthesized SiC strongly depends on the implantation dose, in addition to the anneal temperature. For the highest dose (2 × 10¹⁷ cm⁻²), crystalline β-SiC is formed. Finally, a strong migration of Ge towards the Si substrate is observed from the region where SiC precipitation occurs.     

High temperature carbon implantation in SIMOX

The aim of this experiment was to explore the possibility to convert the Si-overlayer of a SIMOX wafer into 3C-SiC by carbon implantation. In a first attempt carbon was implanted at a temperature 1030°C and energy 100 keV to a dose of 2.5 × 10¹⁷ C⁺ cm⁻². The SIMOX was covered by a thick thermal oxide. Cross-section TEM observations on the implanted specimen reveal that carbon is concentrated mainly at the Si/SiO₂ interfaces at the front and back face of the Si-overlayer forming continuous but highly defected 3C-SiC layers which are in epitaxial relation with the Si matrix. The implanted carbon has the tendency to migrate from the SiO₂ and Si to the SiO₂/Si interfaces to form SiC there.     

Volume added surface barrier discharge plasma excited by bipolar nanosecond pulse power in atmospheric air: optical emission spectra influenced by gap distance

In this paper, volume barrier discharge with different gap distances is added on the discharge border of high-voltage electrode of annular surface barrier discharge for generating volume added surface barrier discharge (V-SBD) excited by bipolar nanosecond high-voltage pulse power in atmospheric air. The excited V-SBDs consist of surface barrier discharge (d=0 mm) and volume added surface barrier discharges (d=2 mm and 3 mm). The optical emission spectra are recorded for calculating emission intensities of N₂ (C ³Ⅱ_u →B³Π_g ) and N₂⁺ (B ²Σ_u⁺ → X ²Σ_g⁺ ), and simulating rotational and vibrational temperatures. The influences of gap distance of V-SBD on emission intensity and plasma temperature are also investigated and analyzed. The results show that d=0 mm structure can excite the largest emission intensity of N ₂ (C ³ Π_u →B ³Π_g ), while the existence of volume barrier discharge can delay the occurrence of the peak value of the emission intensity ratio of N₂⁺ (B ²Σ_u⁺ → X ²Σ_g⁺ )/N ₂(C³Π_u →B³Π_g ) during the rising period of the applied voltage pulse and weaken it during the end period. The increasing factor of emission intensity is effected by the pulse repetition rate. The d=3 mm structure has the highest threshold voltage while it can maintain more emission intensity of N₂(C³ Π _u →B ³Π_g ) than that of d=2 mm structure. The structure of d=2 mm can maintain more increasing factor than that of the d=3 mm structure with varying pulse repetition rate. Besides, the rotational temperatures of three V-SBD structures are slightly affected when the gap distance and pulse repetition rate vary. The vibrational temperatures have decaying tendencies of all three structures with the increasing pulse repetition rate.     

Roll-to-roll fabrication of large-scale polyorgansiloxane thin film with high flexibility and ultra-efficient atomic oxygen resistance

One of the most widely used and well-established atomic oxygen (AO) protection solutions for low Earth orbit (LEO) satellites is the deposition of protective coatings on polymeric materials. However, manufacturing extensive expanses of these coating materials with good transparency, flexibility, smoothness, ultra-thinness, and exceptional AO resistance remains a critical issue. Herein, we successfully deposited a 400 nm thick polyorgansiloxane (SiO_xC_yH_z) coating with high optical transparency and uniform good adherence on to a 1.2 m wide polyimide surface, by optimizing the distribution of hexamethyldisiloxane and oxygen as precursors in the roll-to-roll compatible plasma-enhanced chemical vapor deposition process. After AO irradiation with the fluence of 7.9 × 1020 atoms·cm^–2, the erosion yield of the SiO_xC_yH_z-coated Kapton was less than 2.30 × 10^–26 cm³·atom_–1, which was less than 0.77% of that of the Kapton. It indicates that the SiO_xC_yH_z coating can well prevent the erosion of Kapton by AO. In addition, it was also clarified that a SiO₂ passivation layer was formed on the surface of the SiO_xC_yH_z coating during AO irradiation, which exhibited a 'self-reinforcing'defense mechanism. The entire preparation process of the SiOxCyHz coating was highly efficient and low-cost, and it has shown great potential for applications in LEO.     

Measurement of radial temperature distributions of the blown CO_2 arcs under different conditions

In this paper, the radial temperature distributions of the blown CO_2 arcs in a model gas circuit breaker were investigated by optical emission spectroscopy methods. The CO_2 flows with different flow rates(50, 100 and 150 1 min~(-1)) were created to axially blow the arcs burning in a polymethyl methacrylate(PMMA) nozzle. Discharges with different arc currents(200 and 400A) were conducted in the experiment. The absolute intensity method was applied for a carbon ionic line of 657.8 nm to obtain the radial temperature profiles of the arc columns at a cross-section 1 mm above the nozzle. The calibration for the intensity of the CⅡ 657.8 nm line was achieved by the Fowler–Milne method with the help of an oxygen atomic line of 777.2 nm.The highest temperature obtained in the arc center was up to 19 900 K when the arc current was 400 A and the CO_2 flow rate was 50 1 min~(-1), while the lowest temperature in the arc center was about 15 900 K when the arc current was 200 A and the CO_2 flow rate was 150 1min~(-1). The results indicate that as the arc current increases, the temperature in the arc center would also increase apparently, and a larger gas flow rate would lead to a lower central temperature in general. It can also be found that the influence of the CO_2 flow rate on the arc temperature was much less than that of the arc current under the present experimental conditions. In addition,higher temperature in the arc center would cause a sharper temperature decrease from the central region towards the edge.     

Surface morphology of the Ar ion-irradiated Ag/Si(1 1 1) system

In the present study, a 500 Å thin Ag film was deposited by thermal evaporation on 5% HF etched Si(1 1 1) substrate at a chamber pressure of 8×10⁻⁶ mbar. The films were irradiated with 100 keV Ar⁺ ions at room temperature (RT) and at elevated temperatures to a fluence of 1×10¹⁶ cm⁻² at a flux of 5.55×10¹² ions/cm²/s. Surface morphology of the Ar ion-irradiated Ag/Si(1 1 1) system was investigated using scanning electron microscopy (SEM). A percolation network pattern was observed when the film was irradiated at 200°C and 400°C. The fractal dimension of the percolated pattern was higher in the sample irradiated at 400°C compared to the one irradiated at 200°C. The percolation network is still observed in the film thermally annealed at 600°C with and without prior ion irradiation. The fractal dimension of the percolated pattern in the sample annealed at 600°C was lower than in the sample post-annealed (irradiated and then annealed) at 600°C. All these observations are explained in terms of self-diffusion of Ag atoms on the Si(1 1 1) substrate, inter-diffusion of Ag and Si and phase formations in Ag and Si due to Ar ion irradiation.     

Effect of N_2 and O_2 on OH radical production in an atmospheric helium microwave plasma jet

UV-pulsed laser cavity ringdown spectroscopy of the hydroxyl radical OH(A–X)(0–0)band in the wavelength range of 306–310 nm was employed to determine absolute number densities of OH in the atmospheric helium plasma jets generated by a 2.45 GHz microwave plasma source.The effect of the addition of molecular gases N_2 and O_2 to He plasma jets on OH generation was studied.Optical emission spectroscopy was simultaneously employed to monitor reactive plasma species.Stark broadening of the hydrogen Balmer emission line(H_β)was used to estimate the electron density nein the jets.For both He/N_2 and He/O_2 jets, newas estimated to be on the order of 10~(15)cm~(-3).The effects of plasma power and gas flow rate were also studied.With increase in N_2 and O_2 flow rates, netended to decrease.Gas temperature in the He/O_2 plasma jets was elevated compared to the temperatures in the pure He and He/N_2 plasma jets.The highest OH densities in the He/N_2 and He/O_2 plasma jets were determined to be 1.0?×10~(16)molecules/cm~3 at x?=?4 mm(from the jet orifice)and 1.8?×?10~(16)molecules/cm~3 at x=3 mm, respectively.Electron impact dissociation of water and water ion dissociative recombination were the dominant reaction pathways, respectively, for OH formation within the jet column and in the downstream and far downstream regions.The presence of strong emissions of the N_2~+ bands in both He/N_2 and He/O_2 plasma jets, as against the absence of the N_2~+ emissions in the Ar plasma jets, suggests that the Penning ionization process is a key reaction channel leading to the formation of N_2~+ in these He plasma jets.     

Characteristics of plasma in a novel laser-assisted pulsed plasma thruster

A novel laser-assisted pulsed plasma thruster (LA-PPT) is proposed as an electric propulsion thruster, which separates laser ablation and electromagnetic acceleration. It aims for a higher specific impulse than that achieved with conventional LA-PPTs. Owing to the short-time discharge and the novel configuration, the physical mechanism of the discharge is unclear. Time and spatial-resolved optical emission spectroscopy was applied to investigate the variation in the plasma properties in the thruster discharge channel. The plasma species, electron temperature, and electron density were obtained and discussed. Our investigation revealed that there were H_α, H_β, H_γ, H_ε atoms, C I, C II, C III, C IV, Cl I, Cl II particles, and a small amount of CH, C₃, C₂, H₂ neutral molecular groups in the plasma. The electron temperature of the discharge channel of the thruster was within 0.6–4.9 eV, and the electron density was within (1.1–3.0) $\times $ 10¹⁸ cm⁻³, which shows that the optical emission spectroscopy method is to measure the electron excitation temperature and electron density in heavy particles. But the Langmuir probe method is to measure the temperature and density of free electrons. The use of laser instead of spark plug as the ignition mode significantly changed the plasma distribution in the discharge channel. Unlike the conventional PPT, which has high electron density near the thruster surface, LA-PPT showed relatively large electron density at the thruster outlet, which increased the thruster specific impulse. In addition, the change in the ignition mode enabled the electron density in the LA-PPT discharge channel to be higher than that in the conventional PPT. This proves that the ignition mode with laser replacing the spark plug effectively optimised the PPT performance.     

Inactivation of Staphylococcus aureus by the synergistic action of charged and reactive plasma particles

In this paper, a low-pressure capacitively coupled plasma discharge sustained in an argonoxygen mixture was studied in order to evaluate its properties in terms of inactivation of Staphylococcus aureus. The plasma parameters as electron temperature and plasma density were measured by the Langmuir probe (N_e ≈ 10¹⁵ m⁻³, T_e ≈ 1.5 eV), while the neutral atom density was in the range of 10²¹ m⁻³. In the plasma phase, oxygen radicals were taken as reference of the reactive species with antimicrobial activity, and oxygen spectral lines, over a range of plasma process parameters, were investigated by the optical emission spectroscopy. Optimal plasma conditions were found, and a count reduction of 4 log in a few minutes of the bacterium proves the potentiality of an industrial grade plasma reactor as a sterilization agent.     

Measurement of the first Townsend's ionization coefficient for atmospheric pressure neon by a dielectric barrier discharge

Fast photography and optical emission spectroscopy are implemented in a 5 mm neon gap dielectric barrier discharge (DBD) at atmospheric pressure with quartz glass used as the dielectric layer. Results show that it starts with a Townsend discharge and ends at a sub-normal glow discharge in neon DBD. Based on the Townsend discharge, the first ionization coefficient of neon is measured. The measurements are consistent with those at low pressure. Optical emission spectroscopy indicates that the spectra are mainly composed of atomic lines of neon, molecular bands and molecular ion bands originating from inevitable gas impurities (mainly nitrogen). Moreover, spectral lines emitted from atomic neon corresponding to the transitions (2p⁵ 3p → 2p⁵ 3s) are predominant. Although the second positive system of N₂(C³Π_u → B³Π_g) is observed, their intensities are too weak compared with neon's spectrum. The molecular nitrogen ion line of 391.4 nm is observed. It reveals that Penning ionization between high energy neon excited states and the inevitable gas impurities plays an important role in the value of the α coefficient.     

Radiation damage and annealing behaviour of Ge-implanted SiC

In recent years, single-crystal SiC has become an important electronic material due to its excellent physical and chemical properties. The present paper reports a study of the defect reduction and recrysallisation during annealing of Ge⁺-implanted 6H-SiC. Implants have been performed at 200 keV with doses of 1 × 10¹⁴ and 1 × 10¹⁵ cm⁻². Furnace annealing has been carried out at temperatures of 500, 950 and 1500°C. Three analytical techniques including Rutherford backscattering spectrometry in conjunction with channelling (RBS/C), positron annihilation spectroscopy (PAS) and cross-sectional transmission electron microscopy (XTEM) have been employed for sample characterisation. It has been shown that damage removal is more complicated than in ion-implanted Si. The recrystallisation of amorphised SiC layers has been found to be unsatisfactory for temperatures up to 1500°C. The use of ion-beam-induced epitaxial crystallisation (IBIEC) has been more successful as lattice regrowth, although still imperfect, has been observed to occur at a temperature as low as 500°C.     

Effect of Si implantation on the microstructure of silicon nanocrystals and surrounding SiO2 layer

Si nanocrystals (Si-nc) embedded in a SiO₂ layer have been characterized by means of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). For local Si concentration in excess  8 × 10²¹ Si⁺/cm³, the size of the Si-nc was found to be 3 nm and comparatively homogeneous throughout the whole implanted layer. For local Si concentration in excess of 2.4 × 10²² Si⁺/cm³, the Si-nc diameter ranges from 2 to 12 nm in the sample, the Si-nc in the middle region of the implanted layer being bigger than those near the surface and the bottom of the layer. Also, Si-nc are visible deeper than the implanted depth. Characterization by XPS shows that a large quantity of oxygen was depleted from the first 25 nm in this sample (also visible on TEM image) and most of the SiO₂ bonds have been replaced by Si–O bonds. Experimental and simulation results suggest that a local Si concentration in excess of 3 × 10²¹ Si/cm³ is required for the production of Si-nc.     

基于单一气源的PECVD方法制备SiC薄膜及其微观结构研究

为制备出满足惯性约束聚变（ICF）实验要求的SiC薄膜,本文采用等离子体增强化学气相沉积（PECVD）法,以四甲基硅（TMS）作为唯一反应气源,在不同工作压强下制备SiC薄膜。利用扫描电子显微镜、表面轮廓仪、原子力显微镜、精密电子天平、X射线光电子能谱、傅里叶变换红外光谱对薄膜进行表征与分析。结果表明：SiC薄膜的成分与工作压强密切相关,随着工作压强的增加,薄膜中Si含量整体呈下降趋势;随着工作压强的增加,薄膜沉积速率先增大后减少,密度先减小后增大;与其他制备工艺相比,采用单一气源制备SiC薄膜,其表面粗糙度极低（1.25～1.85 nm）,薄膜粗糙度随工作压强的增加呈先增大后减小的趋势。     

Electrical and optical properties of Co ion implanted a-Si1 − xCx:H alloys

Low resistivity a-Si_1 − xC_x:H alloy films have been formed by high dose Co⁺ ion implantation. The influence of the carbon content of the films on the resistivity has been studied and the lowest values, of the order of 10 Ω/Sq, have been observed for the carbon free films. Even lower resistivities, a further reduction of up to 50%, have resulted from annealing at temperatures up to 500°C. Changes in the optical and structural properties of the implanted a-Si_1 − xC_x:H films have been studied by means of IR and Raman spectroscopy. Results show that the implantation produces considerable structural and chemical modifications. The formation of, and the transition to, a possible CoSi₂ phase has been observed by examining the IR and Raman spectra as a function of implant dose.     

Effect of annealing on the optical absorption of Ni nanoparticles in MgO single crystals

Ni⁺ ion implantation with an energy of 64 keV in MgO single crystals was conducted at room temperature up to a fluence of 1 × 10¹⁷ ion/cm². The as-implanted crystals were annealed isochronally at temperatures up to 900 °C. Optical absorption spectroscopy, X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) have been utilized to characterize the changes of optical properties and the microstructure of the annealed samples. XPS results showed that the charge state of implanted Ni was still mainly in metallic Ni⁰ after annealing at 900 °C. TEM analysis revealed metallic Ni nanoparticles with depth-dependant dimensions of 1–10 nm in the annealed sample. Optical absorption spectroscopy indicated that the Ni nanoparticles exhibited a broad surface plasmon resonance absorption band in annealed samples and the band shifted to a longer wavelength with the increasing annealing temperature.     

Determination of stoichiometry in silicon carbide materials using elastic backscattering spectrometry

Elastic backscattering spectrometry (EBS) was performed on SiC materials, using ⁴He particles at energies ranging from 2 to 4 MeV, in order to establish the energy values that lead to an accurate measurement of the Si/C ratio. Analysis of the random yield of “bulk” SiC single crystals indicates that energy values of 3.25 and 3.75 MeV are the most suitable for chemical composition determination; backscattering yield of carbon is enhanced compared to the yield measured at 2 MeV, while the excitation of strong resonances above 3.75 MeV are suppressed. Random backscattering yield measurements were then carried out at an energy of 3.25 MeV on unhydrogenated SiC thin films grown on Si(1 0 0), by pulsed laser deposition, at different substrate temperatures. The Si and C atomic concentrations in the films were determined with an uncertainty of 1% and little interference from the underlying substrate. The films were found to be stoichiometric with a Si/C ratio of 1.03 ± 0.05, independent of deposition temperature, which indicates that the films were grown under congruent ablation conditions. The analysis proved to be applicable to both amorphous and crystalline SiC layers, as confirmed by the results obtained for films deposited at 400 and 950 °C, respectively.     

α-C_xN_y:H_(1-x-y)薄膜的制备和光学性能分析

采用外置式电容耦合低压等离子体化学气相沉积法,以高纯CH4/N2/H2作为反应气体,制备非晶α-CxNy:H1-x-y薄膜。研究了薄膜沉积速率和入射功率之间的关系,随着功率增大,薄膜沉积速率先增大后减小;SEM图像表明薄膜无层状、柱状结构;AFM图像表明薄膜粗糙度在0.2～0.3nm之间;傅里叶红外光谱(FTIR)显示了薄膜的成键情况;紫外-可见-近红外光谱表明,随着入射功率的增大,薄膜的光学带隙逐渐减小。     

Effects of 160 MeV Ni ion irradiation on polypyrrole conducting polymer electrode materials for all polymer redox supercapacitor

Electronically conducting polymers are suitable electrode materials for high performance supercapacitors, for their high specific capacitance and high dc conductivity in the charged state. Supercapacitors and batteries are energy storage and conversion systems which satisfies the requirements of high specific power and energy in a complementary way. Ion beam {energy > 1 MeV} irradiation on the polymer is a novel technique to enhance or alter the properties like conductivity, density, chain length and solubility.

Conducting polymer polypyrrole thin films doped with LiClO₄ are synthesized electrochemically on ITO coated glass substrate and are irradiated with 160 MeV Ni¹²⁺ ions at different fluence 5 × 10¹⁰, 5 × 10¹¹ and 3 × 10¹² ions cm⁻². Dc conductivity measurement of the irradiated films showed 50–60% increase in conductivity which is may be due to increase of carrier concentration in the polymer film as observed in UV–Vis spectroscopy and other effects like cross-linking of polymer chain, bond breaking and creation of defects sites. X-ray diffractogram study shows that the degree of crystallinity of polypyrrole increases in SHI irradiation and is proportionate to ion fluence. The capacitance of the irradiated films is lowered but the capacitance of the supercapacitors with irradiated films showed enhanced stability compared to the devices with unirradiated films while characterized for cycle life up to 10,000 cycles.