Mode Propagation in a Nonuniform Cylindrical Medium (Correspondence)

A simplified form of the coupling coefficient C(/spl beta//sub p/, /spl beta//sub q/) resulting from a coupled mode theory analysis of wave propagation in a nonuniform medium is derived. It is found for most situations of interest that C(/spl beta//sub p/, /spl beta//sub q/) is proportional to 1/(/spl beta//sub p/-/spl beta//sub q/) and the power transfer between two modes is proportional to 1/(/spl beta//sub p/ - /spl beta//sub q/)/sup 4/. /spl beta//sub p/ and /spl beta//sub q/ are the two different modal propagation constants. For a dielectric rod C(/spl beta//sub p/, /spl beta//sub q/) is a simple line integral around the rod boundary. Approximate forms are presented for optical waveguides.     

A half-moon antenna

This work presents a half-moon antenna (HMA), which is composed of two semi-circular top and bottom conducting plates joined by a rectangular conducting plate. The HMA has a wide radiation beam. Radiation in the y-z plane (in the E plane) is hemispherical with a half-power beam width (HPBW) of more than 200/spl deg/. Radiation in the x-y plane (in the H plane) forms a sector beam with an HPBW of more than 100/spl deg/. To reduce the backward radiation and improve the gain, chokes are added to the HMA. An increase in the gain of approximately 1 dB is obtained. In order to obtain a tilted beam, the radius of the bottom plate is reduced. The maximum beam direction of the tilted beam /spl theta//sub max/ is not sensitive to frequency. Within a frequency range of 11 to 14 GHz (24%), /spl theta//sub max/=167/spl deg//spl plusmn/2/spl deg/. The gain is found to be G=9.5/spl plusmn/0.5 dBi within this same frequency range.     

The rank and kernel of extended 1-perfect /spl Zopf//sub 4/-linear and additive non-/spl Zopf//sub 4/-linear codes

A binary extended 1-perfect code of length n + 1 = 2/sup t/ is additive if it is a subgroup of /spl Zopf//sub 2//sup /spl alpha// /spl times/ /spl Zopf//sub 4//sup /spl beta//. The punctured code by deleting a /spl Zopf//sub 2/ coordinate (if there is one) gives a perfect additive code. 1-perfect additive codes were completely characterized and by using that characterization we compute the possible parameters /spl alpha/, /spl beta/, rank, and dimension of the kernel for extended 1-perfect additive codes. A very special case is that of extended 1-perfect /spl Zopf//sub 4/-linear codes.     

Input Impedance Analysis of 1:1 Balun

The 1:1 balun constructed of a bifilar delay line and an inverse 1:1 transformer is analyzed for its input characteristics. As a main result of the analyses, the following results were obtained about the balun in this paper. 1) Resonance occurs when the line length is equal to n (any positive integer) times half of a wavelength of the unbalanced transmission mode. 2) The lower cutoff frequency is determined by electromagnetic coupling coefficient "k/sub m/" when L/sub sigma/ and /spl iota/ are constant. 3) The upper cutoff frequency is also given by a combination of k/sub m/ and k/sub e/, etc. 4) Shortening of the distance between the balun and the ground makes the resonant frequency lower when the balun has a magnetic core or when the electrostatic coupling coefficient "k/sub e/" becomes smaller and k/sub m/ is kept constant. /spl omega//sub OI/ becomes lower. 5) In order to realize a wide-band balun, /spl beta//sub b/ / /spl beta//sub u/ shouId be larger and and /spl beta//sub b/ / /spl omega/ should be kept constant.     

Broad-band fragmented aperture phased array element design using genetic algorithms

In this paper, a synthesis procedure to design thin broad-band fragmented aperture array elements is described. The arrays are assumed to be infinite periodic and the elements consist of a conducting pattern etched on a dielectric backed by a groundplane. A genetic algorithm (GA) is used to design the conducting pattern, relative permittivity, and thickness of the dielectric substrate with respect to array scan and bandwidth performance. The fitness function in the GA is evaluated using a finite-difference time-domain code with periodic boundary conditions. For a substrate thicker than about 0.1 /spl lambda//sub L/ (/spl lambda//sub L/= wavelength at the lowest frequency in the frequency band investigated), it was found that a bandwidth of at least one octave can be obtained for arrays scanned within 45/spl deg/ from broadside.     

Influence of photon reabsorption on the transfer efficiency of output intensity in semiconductor microcavities

Photon reabsorption effect on the transfer efficiency /spl beta//sub t/ of half-wavelength semiconductor microcavities was investigated by examining the excitation intensity dependence of the output light intensity. It is shown that /spl beta//sub t/ increases under intense excitation, and approaches to over-all spontaneous emission coupling coefficient /spl beta//sub 0/, as a result of the elimination of photon reabsorption. The results clearly demonstrate that the photon reabsorption is the predominant mechanism of the suppression of /spl beta//sub t/ at weak excitation, especially in the case of half-wavelength high-Q cavities.     

Explanation of anomalously high current gain observed in GaN based bipolar transistors

The potential applications of GaN-based bipolar transistors have suffered a setback from poor ohmic contacts and leakage currents. We show in this work that the extrinsic current gain /spl beta//sub EXT/ measured at a low current level can be erroneously attributed to the gain of the intrinsic transistor. By accounting for leakage current coupled with poor ohmic contacts, we show that the observed very high /spl beta//sub EXT/ at low current levels can be modeled accurately. The real gain of the intrinsic transistor /spl beta//sub INT/ is generally much lower. As the current is increased, the effect of leakage currents is diminished, and /spl beta//sub EXT//spl rarr//spl beta//sub INT/. This model is satisfactorily applied to explain our experimental results.     

A novel approach for miniaturization of slot antennas

With the virtual enforcement of the required boundary condition (BC) at the end of a slot antenna, the area occupied by the resonant antenna can be reduced. To achieve the required virtual BC, the two short circuits at the end of the resonant slot are replaced by some reactive BC, including inductive or capacitive loadings. The application of these loads is shown to reduce the size of the resonant slot antenna for a given resonant frequency without imposing any stringent condition on the impedance matching of the antenna. A procedure for designing this class of slot antennas for any arbitrary size is presented. The procedure is based on an equivalent circuit model for the antenna and its feed structure. The corresponding equivalent circuit parameters are extracted using a full-wave forward model in conjunction with a genetic algorithm optimizer. These parameters are employed to find a proper matching network so that a perfect match to a 50 /spl Omega/ line is obtained. For a prototype slot antenna with approximate dimensions of 0.05/spl lambda//sub 0//spl times/0.05/spl lambda//sub 0/ the impedance match is obtained, with a fairly high gain of -3dBi, for a very small ground plane (/spl ap/0.20/spl lambda//sub 0/). Since there are neither polarization nor mismatch losses, the antenna efficiency is limited only by the dielectric and ohmic losses.     

High sensitivity Si-based backward diodes for zero-biased square-law detection and the effect of post-growth annealing on performance

High-sensitivity Si-based backward diodes were realized that are monolithically integratable with transistor circuitry. Potential applications include large area focal plane arrays. The Si-based backward diodes exhibit a high zero-biased curvature coefficient, /spl gamma/, of 31 V/sup -1/ and a low zero biased junction capacitance, C/sub j/, of 9 fF//spl mu/m/sup 2/, all at room temperature. The predicted low frequency voltage sensitivity, /spl beta//sub V/, for a 50 /spl Omega/ source is 3100 V/W. The high sensitivity, low junction capacitance, and Si/SiGe heterojunction bipolar transistor compatibility of the Si-based backward diodes make them very attractive for zero-bias square-law detector applications.     

On The General Relation Between /spl alpha/ and Q (Correspondence)

The relation between the quality factor Q and the attenuation constant /spl alpha/ of a transmission line has been known as follows: /spl alpha/ = /spl beta/ / /2Q where /spl beta/ is the phase constant. Recently from the following relation of propagation constant at resonance /spl Gamma/(/spl omega//sub 0/) + /spl part//spl Gamma/ / /spl part//spl omega/ /spl Delta//spl omega//spl cong/ i/spl beta/(/spl omega//sub 0/), where /spl Gamma/(/spl omega//sub 0/) = /spl alpha/(/spl omega//sub 0/) + i/spl beta/(/spl omega//sub 0/). Yeh derived a general relation between Q and /spl alpha/, namely, /spl alpha/ = /spl upsi//sub p/ / /spl upsi//sub g/ /spl beta/ / /2Q where /spl upsi//sub p/, and /spl upsi//sub g/ are the phase velocity and group velocity of the wave respectively. This general relation can be derived very simply from the generally accepted definition of /spl alpha/ and Q.     

RF HBT oscillators with low-phase noise and high-power performance utilizing a (/spl lambda//4/spl plusmn//spl delta/) open-stubs resonator

This paper presents a new type of transmission-line resonator and its application to RF (microwave and millimeter-wave) heterojunction bipolar transistor (HBT) oscillators. The resonator is a parallel combination of two open stubs having length of /spl lambda//4/spl plusmn//spl delta/(/spl delta//spl Lt//spl lambda/), where /spl lambda/ is a wavelength at a resonant frequency. The most important feature of this resonator is that the coupling coefficient (/spl beta//sub C/) can be controlled by changing /spl delta/ while maintaining unloaded Q-factor (Q/sub u/) constant. Choosing a small value of /spl delta/ allows us to reduce /spl beta//sub C/ or equivalently to increase loaded Q-factor (Q/sub L/). Since coupling elements such as capacitors or electromagnetic gaps are not needed, /spl beta//sub C/ and Q/sub L/ can be precisely controlled based on mature lithography technology. This feature of the resonator proves useful in reducing phase noise and also in enhancing output power of microwave oscillators. The proposed resonator is applied to 18-GHz and 38-GHz HBT oscillators, leading to the phase noise of -96-dBc/Hz at 100-kHz offset with 10.3-dBm output power (18-GHz oscillator) and -104-dBc/Hz at 1-MHz offset with 11.9 dBm (38-GHz oscillator). These performances are comparable to or better than state-of-the-art values for GaAs- or InP-based planar-circuit fundamental-frequency oscillators at the same frequency bands.     

Characterization of accumulation layer capacitance for extracting data on high-/spl kappa/ gate dielectrics

A new parameter extraction technique has been outlined for high-/spl kappa/ gate dielectrics that directly yields values of the dielectric capacitance C/sub di/, the accumulation layer surface potential quotient, /spl beta//sub acc/, the flat-band voltage, the surface potential /spl phi//sub s/, the dielectric voltage, the channel doping density and the interface charge density at flat-band. The parallel capacitance, C/sub p/(=C/sub sc/+C/sub it/), was found to be an exponential function of /spl phi//sub s/ in the strong accumulation regime, for seven different high-/spl kappa/ gate dielectrics. The slope of the experimental lnC/sub p/(/spl phi//sub s/) plot, i.e., |/spl beta//sub acc/|, was found to depend strongly on the physical properties of the high-/spl kappa/ dielectric, i.e., was inversely proportional to [(/spl phi//sub b/m/sup *//m)/sup 1/2/K/C/sub di/], where /spl phi//sub b/ is the band offset, and m/sup */ is the effective tunneling mass. Extraction of /spl beta//sub acc/ represented an experimental carrier confinement index for the accumulation layer and an experimental gate-dielectric direct-tunneling current index. /spl beta//sub acc/ may also be an effective tool for monitoring the effects of post-deposition annealing/processing.     

High-speed (/spl ges/1 GHz) electrical and optical adding, mixing, and processing of square-wave signals with a transistor laser

This letter reports the common-emitter operation (gain /spl beta/=/spl Delta/I/sub C///spl Delta/I/sub B/>1, 20/spl deg/C, I/sub B/=36 mA, /spl lambda/=970 nm) of a dual-input transistor laser, arranged with a separate base contact on either side of a single emitter, that adds, mixes, and processes high-speed square-wave electrical inputs and delivers separate electrical and optical outputs. Applying a square-wave electrical input X/sub 1/(t) to one base contact and X/sub 2/(t) at a second base input, we obtain, with the pulsewidth modulated because of mixing, an electrical output proportional to /spl beta//spl times/[X/sub 1/(t)+X/sub 2/(t)] and a laser output tracking the electrical output (h/spl nu//spl times/f[X/sub 1/(t)+X/sub 2/(t)]) and exceeding it in bandwidth (pulse sharpness).     

Convergence and loss bounds for Bayesian sequence prediction

The probability of observing x/sub t/ at time t, given past observations x/sub 1/...x/sub t-1/ can be computed if the true generating distribution /spl mu/ of the sequences x/sub 1/x/sub 2/x/sub 3/... is known. If /spl mu/ is unknown, but known to belong to a class /spl Mscr/ one can base one's prediction on the Bayes mix /spl xi/ defined as a weighted sum of distributions /spl nu/ /spl isin/ /spl Mscr/. Various convergence results of the mixture posterior /spl xi//sub t/ to the true posterior /spl mu//sub t/ are presented. In particular, a new (elementary) derivation of the convergence /spl xi//sub t///spl mu//sub t/ /spl rarr/ 1 is provided, which additionally gives the rate of convergence. A general sequence predictor is allowed to choose an action y/sub t/ based on x/sub 1/...x/sub t-1/ and receives loss /spl lscr//sub x(t)y(t)/ if x/sub t/ is the next symbol of the sequence. No assumptions are made on the structure of /spl lscr/ (apart from being bounded) and /spl Mscr/. The Bayes-optimal prediction scheme /spl Lambda//sub /spl xi// based on mixture /spl xi/ and the Bayes-optimal informed prediction scheme /spl Lambda//sub /spl mu// are defined and the total loss L/sub /spl xi// of /spl Lambda//sub /spl xi// is bounded in terms of the total loss L/sub /spl mu// of /spl Lambda//sub /spl mu//. It is shown that L/sub /spl xi// is bounded for bounded L/sub /spl mu// and L/sub /spl xi///L/sub /spl mu// /spl rarr/ 1 for L/sub /spl mu// /spl rarr/ /spl infin/. Convergence of the instantaneous losses is also proven.     

Elliptical planar monopole antenna with extremely wide bandwidth

A planar monopole antenna with an extremely wide bandwidth is introduced, which is composed of an elliptical monopole patch and a trapeziform ground plane, both printed on the same side of a substrate, and is fed by a tapered CPW feeder in the middle of the ground plane. The simulated and experimental results demonstrate that this antenna achieves a ratio impedance bandwidth of 21.6:1 for VSWR/spl les/2, and exhibits a nearly omnidirectional radiation pattern, while its area is only about 0.19/spl lambda//sub l//spl times/0.16/spl lambda//sub l/ where /spl lambda//sub l/ is the wavelength of the lowest operating frequency.     

BV/sub CEO/--BV/sub CBO/ separation and sharpness of breakdown in high-speed bipolar transistors

The effect of secondary impact ionization by the noninitiating carrier on the near avalanche behavior of high-speed n-p-n bipolar transistors is studied. We show that secondary collector ionization by generated holes traveling back toward the base layer significantly reduces BV/sub CBO/ if the hole ionization coefficient is higher than that of electrons [/spl beta//sub p/(E)>/spl alpha//sub n/(E)]: positive feedback associated with a strong secondary ionization sharpens the breakdown characteristic by speeding up carrier multiplication and decreases separation between the open-base collector-emitter (BV/sub CEO/) and the open-emitter base-collector (BV/sub CBO/) breakdown voltages. The effect of secondary ionization on the BV/sub CEO/-BV/sub CBO/ separation has not previously been described. Multiplication coefficient comparisons for representative InP, GaAs, and Si collectors indicate all structures can sustain low-current above BV/sub CEO/ operation from a transport (nonthermal) point of view, although the different degrees of secondary ionization in various semiconductors lead to fundamental differences when InP is compared to GaAs and Si since for the latter materials /spl beta//sub p/(E)相似文献   

A cavity-backed rectangular aperture antenna with application to a tilted fan beam array antenna

A rectangular aperture of A/sub x//spl times/A/sub y/, cut in the top conducting plate of a triplate transmission line and backed by a cavity, radiates a tilted beam off the direction normal to the aperture. The mechanism of the radiation is explained using the Poynting vector distribution above the aperture and the phase distribution of the electric field over the aperture. The tilt angle is calculated as a function of side length A/sub x/ for a representative value of A/sub y/=18 mm=0.747/spl lambda//sub 12.45/, where /spl lambda//sub 12.45/ is the wavelength at a test frequency of 12.45 GHz. A tilted beam of approximately 27/spl deg/ is realized at A/sub x//A/sub y/=8/9 with a gain of approximately 8 dB. Using this value of A/sub x//A/sub y/, an array antenna composed of rectangular cavity-backed aperture elements is investigated. The array forms a tilted fan beam without phase shifters. The frequency responses of the gain and input impedance are discussed.     

Electromagnetic imaging of two-dimensional perfectly conducting cylinders with transverse electric scattered field

Electromagnetic imaging of two-dimensional perfectly conducting cylinders using measured transverse electric scattered field is studied in this paper. The contours of cylinders are denoted by local shape functions /spl rho//sub i/=F/sub i/(/spl theta//sub i/) in local polar coordinates which are then approximated by closed cubic B-splines instead of trigonometric series. By using the boundary condition of vanishing tangential electric field on surfaces of perfectly conducting cylinders, a set of electric field integral equations governing the scattering problem is derived. The scattering problem is solved by a point-matching method with pulse basis and Dirac delta testing functions. The inverse problem is reformulated as an optimization problem and solved by a real-coded genetic algorithm with closed cubic B-splines local shape function. Numerical examples show good agreement between the true profiles and the reconstructed results.     

TM and TE Mode Surface Waves on Grounded, Anisotropic, Inhomogeneous, Lossless, Dielectric Slabs (Correspondence)

J. H. Richmond has given the WKB solutions for the field distribution of surface waves on inhomogeneous, isotropic, plane layers. It is the purpose of this letter to extend his work to include a simple anistropy in the dielectric constant by considering a diagonalized relative permittivity tensor with components /spl epsi//sub x/(x), /spl epsi//sub y/(x), and /spl epsi//sub z/(x). The geometry is the same as before except that a perfectly conducting plane is now positioned at x = 0. For easy reference we have used the same notation as Richmond, except where specified otherwise. Compactness in notation has been achieved by expressing the integrations from 0 to x and by considering the x variations outside the slab to be exp {-a(x-a)}.