高阶布拉格光栅在SOI脊形波导上的光刻制作

在SOI脊形波导上通过光刻的方法制作了高阶布拉格光栅.采用顶层Si厚为2μm的SOI基片,通过半导体芯片制备中的光刻工艺,在脊高为935 nm,波导宽度为2μm的脊形波导上,分别制作了刻蚀深度为565 nm和935 nm的起伏型高阶布拉格光栅,测试表明,在1540～1640 nm波长范围内,得到了大于10 dB的消光比,实现了高阶布拉格光栅在SOI脊形波导上的滤波效果.理论和实验都证明了光栅刻蚀深度的增大将有利于增加高阶布拉格光栅的耦合系数,以及光栅周期数的增加会引起更大的光栅损耗.     

End-Facet Polishing of Surface Plasmon Waveguides in Lithium Niobate

This paper describes a custom polishing procedure developed to produce high quality end-facets on die having a rather unique cross section. The dies comprise two thin lithium niobate claddings on either side of a thin narrow gold stripe, supported by a silicon substrate. This heterogeneous structure operates as an optical waveguide supporting a long-range surface plasmon-polariton mode, and is fabricated via wafer-bonding and thinning. Optical insertion loss measurements were obtained on a set of diced waveguides before and after end-facet polishing. Polishing reduced the insertion loss of the waveguides by 4.7–9.1 dB, indicating that one as-diced end-facet contributes a scattering loss of 2.35–4.55 dB.      

All-Optical Format Conversions Using Periodically Poled Lithium Niobate Waveguides

We investigate all-optical format conversions by using cascaded second-order nonlinearities in periodically poled lithium niobate (PPLN) waveguides. Analytical solutions under non-depletion approximation with clear physical insights are derived, showing operation principles of various PPLN-based format conversions. We propose and theoretically demonstrate all-optical 40 Gb/s nonreturn-to-zero (NRZ) to carrier-suppressed return-to-zero (CSRZ), nonreturn-to-zero differential phase-shift keying (NRZ-DPSK) to return-to-zero differential phase-shift keying (RZ-DPSK), and NRZ-DPSK to carrier-suppressed return-to-zero differential phase-shift keying (CSRZ-DPSK) format conversions based on cascaded sum- and difference-frequency generation (cSFG/DFG). Tunable all-optical 20 Gb/s NRZ to return-to-zero (RZ) format conversion based on cascaded second-harmonic generation and difference-frequency generation (cSHG/DFG) is successfully confirmed in the experiment by setting NRZ signal at SHG quasi-phase matching (QPM) wavelength. Moreover, we experimentally report for the first time, PPLN-based all-optical 40 Gb/s NRZ-to-CSRZ, NRZ-to-RZ, and NRZ-DPSK-to-RZ-DPSK format conversions.      

聚焦离子束刻蚀铌酸锂的研究

铌酸锂物理性能稳定,电光、声光及非线性光学效应优异,是集成光学器件中重要的光学材料。然而,目前铌酸锂材料的加工工艺无法满足复杂且小型化的集成光路发展需求。聚焦离子束(FIB)是一种无掩膜、高精度的加工技术,但同时会引入离子注入和材料表面非晶化等损伤。研究了FIB离子剂量对铌酸锂刻蚀深度及表面粗糙度的影响,在离子剂量大于0.25 nC·μm~(-2)条件下实现了亚纳米表面粗糙度的刻蚀。通过采用共聚焦喇曼光谱法表征FIB刻蚀前后铌酸锂喇曼光谱的变化,证明了在离子剂量为0.1～1.0 nC·μm~(-2)下FIB刻蚀对铌酸锂薄膜造成的整体损伤小(喇曼峰展宽的平均变化小于5%),对使用FIB进行精密、可控的铌酸锂结构加工具有重要参考意义。     

Two-Dimensional Terahertz Photonic Crystals Fabricated by Wet Chemical Etching of Silicon

The fabrication of two-dimensional terahertz photonic crystals using wet chemical etching of high-resistivity silicon is described. Wet-etched photonic crystals with a sloped sidewall were fabricated in 16 × 10 square lattices with a period of 1430 μm and a height of 150 μm, and were bonded between two parallel Au-coated silicon wafers for tight confinement in the vertical direction. The formation of a photonic band gap at a frequency of about 0.1 THz with a width of 14 GHz is demonstrated by the experimental results and the numerical simulations of the transmission frequency spectrum for the transverse magnetic mode.     

掺镁铌酸锂晶体的ICP刻蚀性能

掺镁铌酸锂晶体(Mg:LiNbO3)是一种相对难刻蚀的晶体,Mg:LiNbO3的干法刻蚀速率和刻蚀形貌控制是铌酸锂光电子器件加工中的关键技术之一。采用牛津仪器公司的Plasmalab System 100以SF6/Ar为刻蚀气体,具体研究Mg:LiNbO3的刻蚀速率随着感应耦合等离子体(ICP)功率、反应离子刻蚀(RIE)功率、气室压强和气体流量配比等刻蚀参数的变化,同时研究发现SF6/(Ar+SF6)气体流量配比还会影响刻蚀表面的粗糙度。实验结果表明:在ICP功率为1000W,RIE功率为150W,标准状态(0℃,1个标准大气压)下气体总流量为52mL/min,压强为0.532Pa,SF6/(Ar+SF6)气体体积分数为0.077的条件下,刻蚀速率可达到152nm/min,刻蚀表面粗糙度为1.37nm,可获得刻蚀深度为2.5μm,侧壁角度为74.8°的表面平整脊形Mg:LiNbO3结构。     

湿法腐蚀制备的SOI光波导

用化学湿法腐蚀的方法制作了SOI光波导,并且用三维波束传播方法分析和设计了单模波导和1×2 3dB多模干涉分束器,修正了有效折射率和导模传输方法的误差.制作的器件具有低传输损耗(-1.37dB/cm)、低附加损耗(-2.2dB)、良好的均衡性(0.3dB)等优良性能.     

湿法腐蚀制备的SOI光波导

用化学湿法腐蚀的方法制作了SOI光波导,并且用三维波束传播方法分析和设计了单模波导和1×2 3dB多模干涉分束器,修正了有效折射率和导模传输方法的误差.制作的器件具有低传输损耗(- 1 37dB/cm)、低附加损耗(- 2 2dB)、良好的均衡性(0 3dB)等优良性能.     

Design Optimization of Z-Cut Lithium Niobate Electrooptic Modulator With Profiled Metal Electrodes and Waveguides

Analysis and optimization of an ultra-high-speed Z-cut lithium niobate (LN) electrooptic modulator, operating at a high-frequency region, by using a full-wave finite-element numerical technique, has been demonstrated. Investigation of the effects of adjusting the buffer layer thickness, the electrode height, the electrode trapezoidal profile, and the waveguide trapezoidal profile on the microwave effective index N_m, the characteristic impedance Z_c, the microwave losses alpha_c, and the half-wave voltage-length product V_piL has been reported. Optimization of these parameters yield to a novel design of the LN modulator, with a low V_piL and a high bandwidth, operating at a frequency range between 1 and 100 GHz. The frequency-dependent dispersion of the key device parameters, with the aim of determining the device suitability for high-speed operation, has been demonstrated.     

蓝宝石图形衬底上生长GaN的微区拉曼光谱研究(英文)

采用微区拉曼光谱对生长在湿法腐蚀获得的无掩膜周期性图形蓝宝石衬底上GaN材料做了研究,结果显示,侧向外延生长区域具有较低的压应力。采用湿法腐蚀结合原子力显微镜对材料的位错进行了表征,侧向外延区域显示了低的位错密度,具有较高的晶体质量。另外通过对不同生长区域的拉曼纵光学声子与等离子体激元形成的耦合模高频支进行拟合,结果显示侧向外延区域具有较低的背底载流子浓度。研究认为,由于采用图形衬底,侧向外延区域悬空生长降低了位错密度,同时侧向外延区域不与蓝宝石接触,因此采用该方法生长的GaN材料具有较低的压应力和较低的背底载流子浓度。     

退火对离子注入铌酸锂平面波导中折射率分布的影响

研究了不同退火条件对氢离子和氦离子注入铌酸锂平面波导中折射率分布的影响。在不同时间和温度下退火处理后用棱镜耦合法测量了两种波导的暗模 ,并给出退火处理前后两种波导的折射率分布。实验结果表明两种离子的注入均造成了损伤层中正常折射率的减小 ,而反常折射率在波导区却有所增加。退火处理对损伤层中的正常折射率分布影响较明显 ,而在 4 0 0℃以下反常折射率几乎不受退火处理的影响     

半导体激光诱导液相腐蚀精度的提高方法

从半导体激光诱导液相腐蚀的工艺原理出发,对影响刻蚀精度的主要因素进行了分析研究,从刻蚀图像分辨率、侧壁垂直度及底面平坦度、表面均匀化三个方面提出了改善刻蚀精度的方法。     

GaSb-Based Mid-Infrared Single Lateral Mode Lasers Fabricated by Selective Wet Etching Technique with an Etch Stop Layer

We have demonstrated a wet etching technique for fabrication of narrow ridge lasers. Precise control over etching depth and ridge width was realized by introducing an etch stop layer into a laser structure and by using two etchants with different selectivity. The 6-μm-wide ridge laser emitting at 2 μm generated continuous-wave power of 70 mW at 20°C. Single lateral mode operation was observed up to 400 mA, corresponding to 8 × I _th.     

Performance Evaluation of Tunable Channel-Selective Wavelength Shift by Cascaded Sum- and Difference-Frequency Generation in Periodically Poled Lithium Niobate Waveguides

We theoretically evaluate the performance of tunable channel-selective wavelength shift based on cascaded sum- and difference-frequency generation by the use of two pump lights in periodically poled lithium niobate waveguides. In double-pass configurations, the functions of wavelength add/drop and wavelength shift are easy to integrate in the same waveguide. Analysis shows that a longer waveguide more competently adapts narrower channel spacing in wavelength-division-multiplexed (WDM) systems. This wavelength shifter is flexible due to the almost separable operations of the two pumps: The channel is selected by setting the first pump, and the wavelength-shifting value is tuned by adjusting the second pump. This wavelength shifter has a very large dynamic region. For a 2.56-cm-long waveguide, the maximum dynamic region is as broad as 67 nm in a 0.4-nm channel-spacing WDM system. The dynamic region is mainly dominated by the limitation of multiple-channel crosstalk in a dense WDM system. However, it is dominated by the limitation of single-channel efficiency fluctuation in a coarse one.     

脊形波导激光器中GaInP／AlGaInP选择蚀刻性的研究

本文制作了670nmGaInP/AlGaInP应变层量子阱脊形波导激光器,为了进一步优化工艺,在普通的单量子阱材料横向结构中嵌入30－50nm的GaIlP蚀刻阻挡层,用此种材料加工而成的控长1200μm,宽64μm的氧化条激光器的阈值电流密度为340A／cm^2,采用配比为1．0：2．5的HCl:H2O深液对GaInP/AlGaIn进行湿蚀刻研究,得到了较好的选择恂刻性结果。     

近化学计量比掺镁铌酸锂晶体特性研究

采用气相输运平衡技术,对同成分掺镁铌酸锂晶体薄片进行了近化学计量比处理.对处理后晶体的吸收特性、极化电场、抗光折变性能等进行了系统研究.实验结果表明,与同成分样品相比,近化学计量比掺镁铌酸锂晶体吸收边发生蓝移,光折变阈值提高4个量级,周期极化电场降低近1个量级.     

Wavelength-Tunable Microring Resonator on Lithium Niobate

A wavelength-tunable microring resonator with integrated microheater on lithium niobate is presented. Ridge structure on lithium niobate is formed by a wet-etching technique for enhancing the lateral index contrast of the waveguide. The resonant wavelength of the microring resonator is tuned through thermooptic effect by injecting current into the integrated microheater. The tuning characteristics of through port and drop port are measured and the tuning rates in the microring resonator with a radius of 100 mum for transverse-magnetic and transverse-electric polarizations are 2.54 x 10^-2 nm/mA and 3.40 x 10^-3 nm/mA.     

小型LiNbO3光参量振荡器

角度调谐的光参量振荡器的详细理论计算和实验研究。给出了非共线匹配角度调谐的理论曲线和实验结果,两者符合得很好。最大可调谐输出6mJ,转换效率23％。     

A Ferroelectric Frequency-Doubling Material-Potassium Lithium Niobate

The potassium lithium niobate crystals have been grown up. The shapes of solid-melt interfaces which maintaining the steady growth of the potassium lithium niobate crystals have been described. The optical transmission spectrum of the crystal has been surveyed. The perfected crystals showed good Second Harmonic Generation properties.