共查询到20条相似文献,搜索用时 15 毫秒
1.
The modulation properties of 1.55-mum InGaAsP/InP microring lasers are investigated using a multimode rate equation model. A detailed study, with respect to Q-factor and extinction ratio calculations, is carried out as a function of different microring's key design and operating parameters. The modulator's performance study shows the possibility for a successful operation at a bit rate of 2.4 Gb/s for radii between 30 and 50 mum and proper values for the bus waveguide reflectivity. 相似文献
2.
Hill M.T. Anantathanasarn S. Zhu Y. Oei Y.-S. van Veldhoven P.J. Smit M.K. Notzel R. 《Photonics Technology Letters, IEEE》2008,20(6):446-448
In this letter, we demonstrate electrically pumped continuous-wave lasing at room temperature in microring lasers, which employ a quantum-dot gain medium. Lasing occurs in the important 1.55-mum telecom wavelength range. The 2-mum-wide ring waveguides are made from InGaAsP-InP (100) material suitable for active-passive photonic integrated circuits. Lasing in rings down to 22 mum in diameter is found, with a threshold current of 12.5 mA. 相似文献
3.
《Photonics Technology Letters, IEEE》2006,18(18):1895-1897
An enhanced low frequency relative intensity noise due to mode hopping induced from the asymmetric gain suppression in InGaAsP–InP microring lasers, is observed experimentally for the first time. The experimental results are in good agreement to those predicted by a multimode model based on the rate equation approximation accounting for both symmetric and asymmetric nonlinear gain suppression. 相似文献
4.
《Photonics Technology Letters, IEEE》2010,22(2):88-90
5.
Klaus Mathwig Wolfgang Kaiser Andr Somers Johann Peter Reithmaier Alfred Forchel Kazuya Ohira Saeed M. Ullah Shigehisa Arai 《Photonics Technology Letters, IEEE》2007,19(5):264-266
Distributed feedback lasers with first-order vertical grating based on AlInGaAs-InAs-InP quantum-dash lasers were fabricated by electron beam lithography and Cl2-Ar reactive ion etching with an electron cyclotron resonance source. Low threshold currents and single-mode operation with sidemode suppression ratios of 48 dB and a direct modulation bandwidth of 5.5 GHz were demonstrated 相似文献
6.
InGaAsP/InP激光器非平面液相外延生长的研究 总被引:1,自引:0,他引:1
本文叙述了用于制作 InGaAsP/InP 半导体激光器的非平面液相外延工艺。讨论了各种因素对非平面液相外延生长的影响。在 InP 衬底上和刻有沟槽的 InGa-AsP/InP 外延片上成功地生长出了高质量外延层。用该外延片制作的激光器在室温连续工作条件下典型阈值电流30mA,典型输出功率为10mW。最高激射温度为115℃。 相似文献
7.
Jie Lin 《Photonics Technology Letters, IEEE》2008,20(14):1234-1236
An ultracompact polarization-insensitive 1times2 multimode interference (MMI) splitter based on silicon-on-insulator is investigated theoretically. The impact of the insulator index on the size of the MMI and the polarization-dependent performance is analyzed. A polarization-insensitive 1times2 MMI splitter of 4 mum by 16.5 mum is shown as an example. Relaxed tolerances on MMI width (> plusmn100 nm) and length (> plusmn0.7 mum) are obtained for both polarizations while the polarization differential loss is kept in range of 0.1 dB and its excess loss is kept below 0.5 dB. In addition, a wide operation wavelength window of 150 nm is obtained for both polarizations as well. 相似文献
8.
We study the dynamics of vertical-cavity surface-emitting lasers (VCSELs) with direct current modulation in the framework of a model for index-guided VCSELs that takes into account two orthogonal linear polarizations. We analyze the effect of current modulation near the polarization switching (PS) of type I, from the high to the low frequency polarization, and near the PS of type II, from the low to the high frequency polarization. We find that the oscillations of the total power are as those of a single-mode laser, unaffected by the underlaying polarization coexistence or polarization competition. We also study the small-signal modulation response in the Fourier domain, for modulation dc values near the PS point. Close to type I PS the response of the total power as well as the response of the orthogonal polarizations has the same functional dependency on the modulation frequency, and can be fitted by the response function of a single-mode laser. Close to type II PS, polarization competition is a significant process at low modulation frequencies. The polarization-resolved modulation response displays features at low frequencies that are not present in the response of the total power, which is as that of a single-mode laser. The dynamics becomes increasingly complex as the modulation amplitude grows, and there is multistability of solutions. 相似文献
9.
《Quantum Electronics, IEEE Journal of》2010,46(2):220-227
10.
Wei Y. Gustavsson J. S. Sadeghi M. Wang S. Larsson A. 《Quantum Electronics, IEEE Journal of》2006,42(12):1274-1280
We have measured the small-signal modulation response of 1.3-mum ridge waveguide GaInNAs double quantum-well lasers over a wide range of temperatures (25 degC-110 degC) and analyzed the temperature dependence of the modulation bandwidth and the various bandwidth limiting effects. The lasers have low threshold currents and high differential efficiencies with small temperature dependencies. A short-cavity (350 mum) laser has a modulation bandwidth as high as 17 GHz at room temperature, reducing to 4 GHz at 110 degC, while a laser with a longer cavity (580 mum) maintains a bandwidth of 8.6 GHz at 110 degC. We find that at all ambient temperatures the maximum bandwidth is limited by thermal effects as the temperature increases with current due to self-heating. The reduction and subsequent saturation of the resonance frequency with increasing current is due to a reduction of the differential gain and an increase of the threshold current with increasing temperature. We find large values for the differential gain and the gain compression factor. The differential gain decreases linearly with temperature while there is only a weak temperature dependence of the gain compression. At the highest temperature we also find evidence for transport effects that increase the damping rate and reduce the intrinsic bandwidth 相似文献
11.
12.
Liwei Cheng Jenyu Fan Douglas Janssen Dingkai Guo Xing Chen Fred J. Towner Fow-Sen Choa 《Journal of Electronic Materials》2012,41(3):506-513
We investigated the effect of deep-etched mesa sidewall profile and oxide overhang length on the regrowth structural characteristics
for buried- heterostructure (BH) quantum cascade lasers (QCLs) grown by metalorganic chemical vapor deposition (MOCVD). The
relationship between etched mesa sidewall geometry, oxide overhang length, oxide thickness, and growth uniformity was examined
and is extensively discussed. In particular, anomalous growth in the vicinity of the oxide edge resulting from insufficient
oxide overhang length was identified and studied. An ideal ratio of mesa height to oxide overhang length between 2.5 and 3.0
is proposed and experimentally justified to yield satisfactory planar regrowths without anomalous growth. Mesas in the [ 0 1[` 1] ] [ 0 1\overline{ 1} ] direction with smoothly etched entrant profile yield a higher degree of growth uniformity than mesas in the [011] direction
with the re-entrant profile. 相似文献
13.
Veselinov K. Grillot F. Cornet C. Even J. Bekiarski A. Gioannini M. Loualiche S. 《Quantum Electronics, IEEE Journal of》2007,43(9):810-816
In this paper, a theoretical model based on rate equations is used to investigate static and dynamic behaviors of InAs-InP (113)B quantum-dot (QD) lasers emitting at 1.55 mum. More particularly, it is shown that two modelling approaches are required to explain the origin of the double laser emission occurring in QD lasers grown on both, GaAs and InP substrates. Numerical results are compared to experimental ones by using either a cascade or a direct relaxation channel model. The comparison demonstrates that when a direct relaxation channel is taken into account, the numerical results match very well the experimental ones and lead to a qualitative understanding of InAs-InP (113)B QD lasers. Numerical calculations for the turn-on delay are also presented. A relaxation oscillation frequency as high as 10 GHz is predicted which is very promising for the realization of directly modulated QD lasers for high-speed transmissions. 相似文献
14.
根据《双区半导体激光器的稳定性理论》,分析了 InGaAsp/Inp 掩埋异质结构双区共腔激光器的实验结果,计算了这种器件的内部参数。结果表明:内部光耦合随着温度变化是改变器件工作状态的主要因素;阈值电流偏高与器件工艺相关的界面缺陷、结构漏电关系极大;结构漏电可以提高光输出功率。 相似文献
15.
《Quantum Electronics, IEEE Journal of》2009,45(12):1508-1516
16.
介绍了采用单环微谐振器的光滤波器的基本原理,详细介绍了旋转抛涂法、真空蒸发法、光刻及反应离子刻蚀法等制备微环谐振器的工艺过程。波导包层材料采用甲基内稀酸甲酯-甲基丙稀酸环氧丙酯共聚物,以双酚A环氧树脂为高折射率调节剂,采用二者在共聚物中的不同配比来调节芯层材料的折射率。最后给出了实验结果。 相似文献
17.
《Photonics Technology Letters, IEEE》2009,21(11):742-744
18.
通过低压金属有机化学气相外延 (LP MOVPE)工艺生长了AlGaInAs应变补偿量子阱材料 ,通过X射线双晶衍射、光荧光、二次离子质谱的测试分析得到了材料生长的优化工艺参数 ,降低了材料中的氧杂质含量 ,得到了高质量AlGaInAs应变补偿量子阱材料 ,室温光致发光半宽FWHM =2 6meV。采用此外延材料成功制作了 1 3μm无致冷AlGaInAs应变量子阱激光器 ,器件测试结果为 :激射波长 :12 90nm≤ λ≤ 1330nm ;阈值电流 :Ith(2 5℃ )≤15mA ;Ith(85℃ )≤ 2 5mA ;量子效率变化 :Δηex(2 5~ 85℃ )≤ 1 0dB。 相似文献
19.
自由电子抽运X射线激光的理论探讨 总被引:4,自引:1,他引:4
X射线激光是激光物理与等离子物理中的一个重要研究领域。目前,X射线激光研究多采用毛细管放电、高功率激光的多脉冲和短脉冲等抽运方式,而且绝大多数研究局限于软X射线波段。借鉴自由电子激光器的组成结构,提出一种产生X射线激光的新方案:用钨制成毛细管的空心电极取代自由电子激光器内的摇摆器,内充特定金属蒸气,如铜蒸气之类,使自由电子激光器变成自由电子抽运X射线激光器。运用电子碰撞电离、强流粒子束平衡体系理论方程与等离子复合特性等理论对这种新型X射线激光器的工作原理及其方案的可行性作了进一步的理论分析与探讨。 相似文献
20.
《Quantum Electronics, IEEE Journal of》2008,44(12):1139-1144