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1.
The dielectric properties of Pb(Zn1/3Nb2/3) O3-PbZrO3−PbTiO3 (PZN-PZ-PT) system near the rhombohedral/tetragonal morphotropic phase boundary (MPB) are carefully studied in this paper. It is found that, for all samples, the curves around the temperatures of dielectric permittivity peak show the characteristics of diffuse phase transition. The change in PbZrO3/PbTiO3 ratio has much influence on the dielectric properties of the samples. The extent of diffuse phase transition increases with the increasing Zr/Ti ratio. The samples in rhombohedral region have typical diffuse phase transition in the temperature range measured. However, for the samples with tetragonal symmetry, a spontaneous normal ferroelectric-relaxor phase transition exists at temperature lower than that of permittivity peak. This normal ferroelectric-relaxor phase transition is confirmed by the experiment of thermally driven current. The analysis of TEM reveals that the samples in tetragonal region show a 90% macrodomain structure, while the samples in rhombohedral region have the configuration of microdomain structure.  相似文献   

2.
The structural, dielectric and piezoelectric properties of (1-x)(Bi1/2Na1/2) TiO3-xBaTiO3 ceramics were investigated for the compositional range, x=0.02, 0.04, 0.06, 0.08, 0.10. The samples were synthesized by a conventional solid-state reaction technique. All compositions show a single perovskite structure, and X-ray powder diffraction patterns can be indexed using a rhombohedral structure. Lattice constants and lattice distortion increase while the amount of BaTiO3 increases. The X-ray diffraction results show the morphotropic phase boundary (MPB) of (1-x)(Bi1/2Na12) TiO3-xBaTiO3 exists in near x=0.06-0.08. Temperature dependence of dielectric constant eT33/ε0 measurement reveals that all compositions experience one structural phase and two ferroelectric phases transition below 400℃: rhombohedral (or rhombohedral plus tetragonal) ferroelectric phase ←→ tetragonal antiferroelectric phase ←→ tetragonal paraelectric phase. Relaxor behaviors exist in the course of ferroelectric to antiferroelectric phase transition. Dielectric and piezoelectric properties are enhanced in the MPB range for ( 1-x)(Bi1/2Na1/2)TiO3-xBaTiO3.  相似文献   

3.
Polycrystalline samples of Sr5PrTi3Ta7O30 (SPTT) and Sr5EuTi3Ta7O30 (SETT) compounds were prepared by high-temperature solid-state reaction method and their formation, structure and dielectric properties were studied. They are found to be ferroelectric phase of filled tetragonal tungsten bronze (TB) structure at room temperature and undergoes diffuse type of ferroelectric-paraelectric phase transition around 34 °C and 31 °C, respectively. At 1 MHz SPTT exhibits high dielectric constants of 177 and low dielectric losses of 3.5×10−4 and SETT has high dielectric constants of 125 and low dielectric losses of 2.4×10−3.  相似文献   

4.
Compounds Sr4Eu2Ti4Nb6O30 and Sr5EuTi3Nb7O30 with filled tetragonal tungsten bronze structure were prepared,and the dielectric characteristics and ferroelectric transition were investigated.Both ceramics displayed weak frequency dependence in room temperature dielectric constant,which decreased from 125 to 118 for Sr4Eu2Ti4Nb6O30,from 206 to 195 for Sr5EuTi3Nb7O30 in the frequency range of 10 kHz to 1 MHz.The present ceramics showed a diffuse ferroelectric phase transition.The frequency independent transition temperature (Tm) indicated the above compounds had no relaxor property.The diffuseness (γ) was 1.45 and 1.64 for Sr4Eu2Ti4Nb6O30 and Sr5EuTi3Nb7O30 respectively.The weak ferroelectric of the present materials are indicated from the P-E hysteresis loops,and a small 2Pr of 0.596 μC/cm2 and 0.068 μC/cm2 were observed for Sr4Eu2Ti4Nb6O30 and Sr5EuTi3Nb7O30 respectively.  相似文献   

5.
Sr5LaTi3Nb7O30 ceramic was prepared by the conventional high temperature solid-state reaction route. The sintered samples were characterized by X-ray diffraction, scanning electron microscopy ( SEM ), differential thermal calorimetry ( DSC ) and dielectric measurements. The results show Sr5LaTi3Nb7O30 belongs to paraclectric phase of filled tetrngonal TB structure at room temperature, and undergoes a diffuse phase transition in the temperature range of -54-34℃ . And Sr5LaTi3Nb7O30 ceramic shows a high dielectric constant of 479 with a low dielectric loss of 0.005 at 1MHz . In comparison with Ba-based ceramics with TB structure, the temperature coefficients of the dielectric constant ( τt ) is significantly reduced.  相似文献   

6.
采用传统固相法制备(Ba 0.8Sr 0.2) 1-1.5x BixTiO3 (x= 0.02,0.05,0.15,缩写为BSBT)陶瓷.在空气条件下1 473 K 保温2 h退火制得,并对陶瓷样品的结构、微观形貌和介电性能进行了测试.其中,在介电研究中不仅出现了弥散的相变,并且在高温区域观察到了弥散型的介电异常.根据居里-外斯定律的拟合结果,在样品x=0.05的BSBT陶瓷样品中出现相对较强的一个弥散相变.此外,通过阻抗分析,不仅表征了BSBT陶瓷的晶界电阻,还由此算出陶瓷样品的活化能和电导活化能.极化原理表明BSBT陶瓷的高温弛豫与氧空位引起离子的跳跃有关.而对于样品的高温介电异常,此处认为是一种介电弛豫行为,主要由弛豫强度变化所致.  相似文献   

7.
以xPMnS-(1-x)PZN四元系压电陶瓷为研究对象,通过研究Zn1/3Nb2/3含量的变化对0.5PMnS-0.5aPZN材料结构与性能的影响,获得具有高压电活性的0.5PMnS-0.5aPZN陶瓷材料。结果表明,四方相结构的0.5PMnS-0.5aPZN材料压电活性优于三方相结构,性能最好的组成位于MPB(四方相边界)附近靠近四方相含量较高的区域,组成Zn1/3Nb2/3含量的变化影响了MPB的位置。  相似文献   

8.
采用固相反应法制备了Ba1-xBix(Ti0.9Zr0.1)O3(x=0.01,0.02,0.03,0.04)陶瓷,X射线衍射分析表明所有样品均是四方晶体结构,3%mol的Bi3+能够完全溶入钙钛矿晶格中.不同频率下Ba1-xBix(Ti0.9Zr0.1)O3陶瓷的介电温谱显示所有样品均表现出弥散相变的特征,在x≥0....  相似文献   

9.
采用固相合成法制备了(Ba0.92-xCa0.08Ndx)(Ti0.82Zr0.18)O3 (0≤x≤0.02)陶瓷样品,借助XRD、LCR等手段对该陶瓷的结构和介电性能进行了研究。结果表明:当x=0.015时,陶瓷样品出现第二相。通过GULP软件模拟计算并结合实验数据分析可知:随着Nd3+浓度增加,Ti4+空位补偿机制优先发生,可能伴有少量自我补偿。增大Nd3+掺杂量,介电常数与介电损耗均呈现下降趋势,介电峰值扩展并向低温移动。随着Nd3+掺杂量增加,陶瓷样品呈现弛豫型铁电体特征,这与偏离平衡位置Nd3+和缺陷偶极子[4NdBa?+VTi″″]产生的无规场有关。  相似文献   

10.
采用固相反应法制备了Ba1-xBix(Ti0.9Zr0.1)O3(x=0.01,0.02,0.03,0.04)陶瓷,X射线衍射分析表明所有样品均是四方晶体结构,3%mol的Bi3+能够完全溶入钙钛矿晶格中。不同频率下Ba1-xBix(Ti0.9Zr0.1)O3陶瓷的介电温谱显示所有样品均表现出弥散相变的特征,在x≥0.02的三组样品又表现出弛豫铁电体的特征。通过纳米极性微区和畴壁探讨了弛豫现象产生的机理。  相似文献   

11.
Several typical high dielectric constant materials are reviewed to study the electrical properties and relaxation mechanism. It is found that a Lorenz-type law can be used to describe the dielectric permittivity of either the normal ferroelectrics with or without diffuse phase transitions (DPT) or the typical ferroelectric relaxors. The ferroelectric DPT can be well described by just one fitting process using the Lorenz-type law, while the relaxor ferroelectric transition needs two independent fitting processes. The Lorenz-type law fails at the low temperature side of the dielectric maximum of a first-order ferroelectric phase transition. Above the transition temperature, the dielectric curves of all the studied materials can be well described by a Lorenz-type law. Supported by the National Natural Science Foundation of China (Grant No. 50672075), New Century Excellent Talents (Grant No. 05-087), Natural Science Foundation of Northwestern Polytechnical University (Grant No. 200703), Xi’an Science & Technology Foundation (Grant No. CXY08006) and 111 Project (Grant No. B08040)  相似文献   

12.
通过铌铁矿预合成法制备了(1-x)Sr(Fe1/2Nb1/2)O3-xPbTiO3(SFN-PT)铁电陶瓷。XRD测量表明,合成的SFN-PT陶瓷为纯钙钛矿结构。随着PbTiO3(PT)摩尔分数的增加,SFN-PT陶瓷的晶体结构从三方相向四方相转变,其介电响应也从弥散的宽峰变得比较尖锐,并伴随着介电常数峰值温度(Tm)的升高。少量的MnO2或Li2CO3掺杂能有效地降低SFN-PT陶瓷的介电损耗。SFN-PT陶瓷呈现典型的P-E电滞回线,但是剩余极化强度较小,少量的MnO2或Li2CO3掺杂能明显地降低矫顽场、增大剩余极化强度。SFN-PT陶瓷的压电应变常量d33较小,随着组分的不同,d值在10~22pC/N之间变化。  相似文献   

13.
采用冷压陶瓷技术制备了(Ba1-xSrx)TiO3(x=0.15,0.20,0.25,0.30,0.35)陶瓷.研究了烧结温度的提高对陶瓷结构及介电规律的影响.研究表明:30℃烧结温度的提高使该系列陶瓷能在x=0.35后从四方相进入立方相.介电峰移动率为-3.2℃/%Sr.x=0.35样品的介电峰发生在室温附近,室温介电常数在8 000左右,室温介电损耗降至0.04以下,适合于高介电材料的应用.  相似文献   

14.
采用传统的固相烧结法于1120℃烧结2 h得到(0.82-x)Bi0.5Na0.82Ti O3-0.18Bi0.5K0.18TiO3-xBiFeO3(x=0.01-0.07)无铅压电陶瓷,并对该体系陶瓷的微观结构和电学性能进行了研究。结果表明,BiFeO3的引入量x为0.01-0.07时,样品均为具有MPB准同型相界(三方相和四方相共存)的钙钛矿结构。BiFeO3的引入使陶瓷的晶粒度略有增加;当x=0.03时,样品达到最大致密度。为97.7%;陶瓷的压电常数d33随BiFeO3的引入而降低。陶瓷的相对介电常数εr和居里温度随BiFeO3的引入而明显增大,在x=0.03时达到最大值。  相似文献   

15.
研究了具有庞磁电阻(CMR)效应的锰基钙钛矿氧化物La0.7Ca0.3MnO3(LCMO)与Al复合体系的电磁输运性质.根据X射线衍射分析及电阻率与温度的关系可知,在(1-x)LCMO+xAl(x代表物质的量)复合样品中,发现了新相Al2O3,且LCMO晶格常数和晶胞体积随Al掺量的增加而减小,同时在复合样品中出现了除对应LCMO本征金属-绝缘体转变峰TP1之外,在较低温度区域出现了另外一个转变峰TP2的现象,且复合样品转变峰TP2比LCMO本征金属-绝缘体转变峰TP1处于较宽的温度区域.经研究认为,在合成复合样品的实验过程中,既有Al被氧化为Al3+替代Mn3+的替代反应,也有Al经过高温与空气发生反应生成Al2O3,进而填隙在LCMO晶界处影响母体的电磁输运性质.本系列复合物中较宽温度区域CMR的发现为今后同类问题的研究提供了很好的实验基础.  相似文献   

16.
Sintering and dielectric properties of fine-grained BaTiO3 ceramics   总被引:1,自引:0,他引:1  
A new sintering method, spark plasma sintering (SPS), is described for the sintering of fine-grained BaTiO3 ceramics. Dense ceramics with fine grain size of near 170 run are obtained using SPS at low temperature of 900°C without holding time. The dielectric measurements of various grain size specimens show that the dielectric constants decrease with the reduce of grain size, and diffuse phase transition showed in the dielectric-temperature spectra. The variation in dielectric properties with grain size is explained.  相似文献   

17.
镧系离子对钛酸钡陶瓷结构的修改在介电领域的进展   总被引:2,自引:0,他引:2  
元素周期表中的镧系包含14种元素,作为“现代化学工业维他命”,当它们的离子被并入钛酸钡晶格中时,可以大大降低钛酸钡的介电损失、温度系数和晶粒尺寸,适于电子器件微小化和成为替代目前的基于钛酸铅高介电材料的环境友好材料,并提高钛酸钡的介电性能.因此,镧系离子对钛酸钡陶瓷结构的修改以提高钛酸钡陶瓷的介电物性在高介电材料基础研究与应用领域成为当前国际上的一个热点.在这篇评论中,系统地评价镧系离子因镧系收缩而并入钛酸钡陶瓷的位占据倾向、介电响应规律、一级相变和扩散相变、以及材料在室温高介电扩散的实现.  相似文献   

18.
采用氧化物混合工艺制备了La2O3和Cr2O3共掺杂的CaCu3Ti4O12(CCTO)陶瓷材料。通过XRD、介电温度特性等测试手段,研究了掺杂不同浓度的La2O3和Cr2O3对CCTO体系陶瓷介电性能的影响,并对掺杂机理进行了分析.研究结果表明:分别掺杂La2O3和Cr2O3的CCTO陶瓷的介电损耗为~0.2,比纯的CCTO陶瓷样品低,而介电常数仍保持在~104;掺杂0.03at%La2O3和0.08at%Cr2O3的CCTO陶瓷材料的介电常数为4.4×104,介电损耗可降至0.15.因此,通过共掺杂的方法可以在有效降低CCTO陶瓷介质损耗的同时,仍维持高的介电常数.  相似文献   

19.
The high-dense nanocrystalline BaTiO3(BT)ceramics with grain size smaller than 100nm have been successfully prepared by the two step sintering and the spark plasma sintering(SPS)process.The successive transitions in nanograin BT ceramics from rhombohedral to orthorhombic,tetragonal and cubic transitions,similar to those in coarse BT ceramics,were revealed by in-situ temperature dependent Raman spectrum.The multiphase coexistence and the diffused phase transition character were demonstrated in the 8nm nanocr...  相似文献   

20.
The influences of doping of MnNb2O6 on the structure and dielectric properties of Ag(Nb0.8Ta0.2)O3 were illustrated. Ag(Nb0.8Ta0.2)O3 samples doped with different amount of preformed MnNb2O6 (1 mol%, 2 mol%, 3 mol%, 4 mol%, 6 mol%, 8 mol%) were prepared by traditional solid-state reaction method and characterized by XRD, SEM and EDS, and the dielectric properties of samples were compared. The experiment results indicated that when the doping amount of MnNb2O6 was greater than 3 mol%, second phase appeared because of the solid solution limit. The permittivity of the Ag(Nb0.8Ta0.2)O3 samples doped with MnNb2O6 firstly increased and then decreased with the sintering temperature, while the dielectric loss decreased first, and then increased slightly. 1 100 ℃ seems to be the most proper sintering temperature for most of the samples. When the amount of MnNb2O6 is about 3 mol%, the samples have the best dielectric properties, larger permittivity and smaller dielectric loss.  相似文献   

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