一种新颖的用于RF-CMOS工艺片上层叠变压器的紧凑型模型

A novel compact model for on-chip stacked transformers is presented.The proposed model topology gives a clear distinction to the eddy current,resistive and capacitive losses of the primary and secondary coils in the substrate.A method to analytically determine the non-ideal parasitics between the primary coil and substrate is provided.The model is further verified by the excellent match between the measured and simulated S-parameters on the extracted parameters for a 1:1 stacked transformer manufactured in a commercial RF-CMOS technology.     

A novel hydrodynamic model for nanoscale devices simulation

This paper presents a novel scheme to incorporate quantum effect in classical hydrodynamic model. The scheme can be applied to multi-dimensional and transient conditions and no additional equations are required to solve quantum potential, so complexity of equations is drastically reduced. Simulation results show consistent with that of Monte Carlo simulation. This technology provides an efficient method for investigating quantum effect in small size semiconductor devices. A new guess method for hydrodynamics model has also been proposed in this paper and a 2D hydrodynamic simulator based on quantum correction and new initial guess method has been developed. The solution obtained from DD model gives a good initial guess of HD model. Its advantage is it can achieve convergence after a few iterations because initial guess is closed to final solution. Two-dimensional simulations have been carried out on a few nanoscale devices. The results have been compared with that of other initial guess methods and the significant differences have been found, especially in numerical stability.     

一种CMOS工艺离子敏场效应型晶体管的模型

采用CMOS工艺可以实现离子敏场效应型晶体管(ISFET),若在栅极氧化层之上保留多晶硅层,并通过引线使其与 外界的金属层相连作为悬浮的栅极,可实现悬浮栅结构ISFET.从ISFET的传感机理出发,根据表面基模型,利用HSPICE建 立了悬浮栅结构ISFET的物理模型.以该模型为研究对象,探讨了薄膜等效电阻、薄膜等效电...     

辐照诱发CMOS电路器件间漏电流的理论研究

应用解析分析和TCAD器件模拟研究了CMOS电路中由辐照诱发的器件间漏电流问题。以往报道中对于场氧化层中陷阱电荷沉积进而导致寄生漏电流通道开启的物理过程存在若干不同观点,本文中针对这些矛盾点入手,在理论分析中考虑电场强度、氧化层厚度和掺杂浓度随深度的变化,而不仅仅是针对单一变量进行分析。在所有可能的器件间漏电流通道中,以N型阱作为漏区和源区的寄生结构在源漏间存在电压差时相对其他寄生结构对总剂量效应更敏感。但考虑到电路实际工作中N阱区通常接相同电源电平,所以该类寄生结构不会恶化实际CMOS电路的总剂量效应敏感性。总的来说,存在于实际电路中、并且在实际工作中仍然需要考虑的器件间漏电流通道对总剂量效应并不十分敏感（< pA）。     

A review of compact modeling for phase change memory

Phase change memory(PCM)attracts wide attention for the memory-centric computing and neuromorphic comput-ing.For circuit and system designs,PCM compact models are mandatory and their status are reviewed in this work.Macro mod-els and physics-based models have been proposed in different stages of the PCM technology developments.Compact model-ing of PCM is indeed more complex than the transistor modeling due to their multi-physics nature including electrical,thermal and phase transition dynamics as well as their interactions.Realizations of the PCM operations including threshold switching,set and reset programming in these models are diverse,which also differs from the perspective of circuit simulations.For the purpose of efficient and reliable designs of the PCM technology,open issues and challenges of the compact modeling are also discussed.     

A 2D physically based compact model for advanced power bipolar devices

A two-dimensional (2D) physical compact model for advanced power bipolar devices such as Injection Enhanced Gate Transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices, the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500 V-1500 A flat pack TOSHIBA IEGT.     

相似原理应用于混响室缩比模型的验证分析

为了能够将缩比模型应用于混响室设计中,对电磁场相似原理在混响室金属谐振腔体中的适用性问题进行了验证。分析计算了混响室缩比前后的模式数目,证明其符合相似原理;对构造的模型进行了仿真分析,表明缩比前后混响室金属腔体中观察点的电场值具有相似性;通过混响室实物的场均匀性测试数据验证了仿真分析方法的正确性。理论推导和仿真分析结果均说明电磁场相似原理可应用于混响室缩比模型中。     

一种新的集成电路互连线串扰模型和估计公式

建立了一个考虑分布电阻,分布电容的互连线混П模型,在这个模型的基础上,分析了终端在最坏条件下的串扰响应,并推导了三阶S域系数的精确表达式,最终,获得了一个新的互连线串扰响应的估计公式,通过与SPICE模拟的结果相比较,该文的模拟结果非常接近实际电路的串扰响应,与相关文献所发表的结果相比较,该模型更符合实际情况,结果也更精确。     

基于霍尔效应的微波功率线性测量技术研究

为了提高微波功率测量的准确性,文中将平面电磁波作用于霍尔器件,用解析方法得到了霍尔电压的直流分 量与微波功率密度之间的线性关系。基于同轴线设计了通过式与吸收式两种型号的微波功率探测器。以同轴通过式 为例,在0.1 mW~50.0 mW 的微波功率测量范围内,探测器的线性度达98.28%,瞬态响应时间为3 μs~6 μs,频率响应 范围为1 GHz~10 GHz。实验结果与理论分析结果一致,该新型探测器具有线性度好和响应速度快的特点,有望得到更 为广泛的应用。     

锑化铟锭条的全自动霍耳效应测试系统

为了解决InSb锭条霍耳效应的测试任务‘研制出一套微机控制的全自动测试系统,可对各种截面形状的半导体锭条进行无破坏性的霍耳效应测量。本系统包括一台HP-85型计算机和705型扫描器、220型恒流源以及195型数字多用表,一个自制的多功能测试单元。本文叙述了系统的测量原理,分析了系统中各部分仪器和机构的连接配合控制及其具有的功能,介绍了抗干扰问题的解决方法并进行了误差分析。进行了大量的室温下的测量,并与本征理论值比较,证明系统的测量精度与误差分析是相一致的。此系统大大提高了InSb锭条的测量速度和精度,是研究InSb材料(包括其他半导体材料)十分有用的工具。     

A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure

This paper presents a compact two-dimensional analytical device model of surface potential, in addition to electric field of triple-material double-gate (TMDG) tunnel FET. The TMDG TFET device model is developed using a parabolic approximation method in the channel depletion space and a boundary state of affairs across the drain and source. The TMDG TFET device is used to analyze the electrical performance of the TMDG structure in terms of changes in potential voltage, lateral and vertical electric field. Because the TMDG TFET has a simple compact structure, the surface potential is computationally efficient and, therefore, may be utilized to analyze and characterize the gate-controlled devices. Furthermore, using Kane's model, the current across the drain can be modeled. The graph results achieved from this device model are close to the data collected from the technology computer aided design (TCAD) simulation.     

精简热模型在集成电路封装中的应用研究

探讨了为一款FBGA封装产品建立DELPHI型热阻网络的新方法。首先利用恒温法为芯片封装建立星型网络,在此基础之上求解支路耦合热阻值,构成DELPHI型热阻网络。经过仿真验证显示,所建立的两种DELPHI型热阻网络模型与详细热模型(DTM)的结温误差均在10%以内,从而具备较好的边界条件独立性。     

功率器件寿命预测模型

分析了功率器件寿命预测研究现状,并通过恒定应力加速寿命试验来提取器件失效参数,利用正态分布统计方法提取Coffin-Manson寿命预测模型参数建立功率器件寿命预测模型并进行分析。结果表明,模型参数拟合值和实测值的相关系数均在96.8%以上,试验结果满足正态分布统计,说明得到的模型参数是有效的。模型在ΔTj为70.5℃下仿真值与试验值的相对误差为2.768%,证明了该模型的可行性和准确性。     

覆有BST膜的半导体功率器件结终端研究

通过一系列的工艺步骤,在半导体功率器件含有场限环(FLR)的结终端上覆盖了一层300 nm厚、介电常数高的钛酸锶钡( BST)膜.对该新型结终端和无BST膜的传统FLR结终端的结构与性能进行了研究比较.结果表明,在覆盖BST膜后,FRL结终端的结构击穿电压提高了50％.这证明BST膜能够提高器件的击穿电压.     

A charge allocating model for the breakdown voltage calculation and optimization of the lateral RESURF devices

A new quite simple analytical model based on the charge allocating approach has been proposed to describe the breakdown property of the RESURF (reduced surface field) structure. It agrees well with the results of numerical simulation on predicting the breakdown voltage. Compared with the latest published analytical model, this model has a better accuracy according to the numerical simulation with simpler form. The optimal doping concentration (per unit area) of the epi-layer of the RESURF structures with different structure parameters has been calculated based on this model and the results show no significant discrepancy to the data gained by others. Additionally the physical mechanism of how the surface field is reduced is clearly illustrated by this model.     

A compact deep-submicron MOSFET gds model including hot-electron and thermoelectric effects

A compact I_ds model with physical drain-conductance (g_ds) modeling for deep-submicron MOSFETs is formulated based on first-principle momentum-/energy-balance equations, which simultaneously includes the hot-electron and thermoelectric effects in a unified compact form with two fitting parameters and one-step extraction. The model has been verified with 0.18-μm experimental data with good g_ds prediction.     

埋超结层的电场分布的一个解析模型

An analytical model of the electric field distributions of buried superjunction structures,based on the charge superposition method and Green’s function approach,is derived.An accurate approximation of the exact analytical model of the vertical electric field is also proposed and demonstrated by numerical simulation.The influence of the dimension and doping concentration of each layer on the electric field is discussed in detail,and the breakdown voltage is demonstrated by simulations.     

用于横向RESURF器件击穿电压优化的电荷分配模型

A new quite simple analytical model based on the charge allocating approach has been proposed to describe the breakdown property of the RESURF （reduced surface field） structure. It agrees well with the results of numerical simulation on predicting the breakdown voltage. Compared with the latest published analytical model, this model has a better accuracy according to the numerical simulation with simpler form. The optimal doping concentration （per unit area） of the epi-layer of the RESURF structures with different structure parameters has been calculated based on this model and the results show no significant discrepancy to the data gained by others. Additionally the physical mechanism of how the surface field is reduced is clearly illustrated by this model.     

一种改进的CMOS紫外/蓝光光电二极管的二维响应度物理模型

A CMOS UV and blue-extended photodiode is presented and fabricated for light detection in the ultraviolet/blue spectral range. An octagon homocentric ring-shaped geometry is used to improve the ultraviolet responsivity and suppress edge breakdown. This paper has established a two-dimensional responsivity physical model for the presented photodiode and given some numerical analyses. The dead layer effect, which is caused by the high-doping effects and boron redistribution, is considered when analyzing the distribution of the current of the proposed UV and blue-extended photodiode. In the dead layer, the boron doping profile decreases towards the surface. Simulated results illustrate that the responsivity in the UV range is obviously decreased by the effect of the dead layer, while it is not affected in the visible and near-infrared part of the spectrum. The presented photodiode is fabricated and the silicon tested results are given, which agree well with the simulated ones.     

A comparison of measurement techniques for determining phosphorus densities in semiconductor silicon

Phosphorus densities in semiconductor silicon slices cut from 14 single crystal ingots have been determined by two electrical and two analytical techniques. Hall effect measurements were made on specimens from all ingots, and junction capacitance-voltage measurements were made on specimens with densities up to about 5 × 10¹⁷ cm⁻³. Neutron activation analysis was used to measure phosphorus densities from 5 × 10¹⁵} to 5 x 10¹⁹} cm⁻³, and a photometric technique was used for densities greater than 10¹⁷ cm⁻³. A systematic discrepancy of about 15% between the photometric and neutron activation data is indicative of the interlaboratory agreement that might be realized in practice with these techniques. This work was conducted as part of the Semiconductor Technology Program at NBS and was supported by the Defense Advanced Research Projects Agency (Order 2397). Not subject to copyright.