Ion beam induced formation of nanocrystalline silicon in pulsed laser deposited SiOX thin films

Synthesis and structural studies of nanocrystalline silicon grown in pulsed laser deposited SiO_X films is reported. The effect of high energy heavy ion beam irradiation on these films is studied using 100 MeV Ag ions. The structural studies were carried out using micro Raman spectroscopy, GAXRD, FTIR, TEM, HRTEM, SAED and EDX. The occurrence of phase separation in non-stoichiometric silicon oxide by means of ion beam irradiation leading to the formation of silicon nanocrystals in the films is confirmed by the results. HRTEM results reveal the structure of silicon phase formed after ion beam treatment and the particle size can be controlled up to 2-3 nm. A detailed analysis by micro Raman and HRTEM studies suggest the presence of crystallite size distribution. The results of GAXRD and SAED confirm the formation of cubic phase of silicon with two different lattice parameters. The studies conclude that the size of the nanocrystals can be controlled by varying deposition and ion irradiation parameters.     

Study of iodine diffusion in silicon carbide

Diffusion of iodine in 6H-SiC and polycrystalline CVD-SiC was investigated using Rutherford backscattering spectroscopy and electron microscopy. A fluence of 1 × 10¹⁶ cm⁻² of ¹²⁷I⁺ was implanted with an energy of 360 keV at room temperature, producing an amorphous surface layer of approximately 220 nm thickness. The implantation profile reached an atomic density of approximately 1.3% at the projected range of about 95 nm. Broadening of the implantation profile and iodine loss through the front surface during isochronal and isothermal vacuum annealing was determined. At a temperature of 1100 °C no iodine loss was observed after 120 h and a diffusion coefficient of less than 10⁻²¹ m² s⁻¹ was extracted from the analysis of profile widths. Relatively strong broadening occurred after 60 h annealing at 1200 °C with the iodine profile extending beyond 300 nm into the bulk, accompanied by a surprisingly modest iodine loss through the surface. Electron microscopic studies reveal a drastic restructuring of the surface region at this temperature, indicating possible chemical reactions between iodine and silicon carbide.     

Channeling characterization of defects in silicon: an atomistic approach

We review here the possibilities opened by a recent development of the Monte Carlo binary collision approximation (MC-BCA) simulation of Rutherford backscattering spectrometry-channeling (RBS-C) spectra for the study of radiation damage in monocrystalline materials. The ion implantation of silicon has been chosen as a case study. Atomic-scale modeling of defect structures was used to determine the location of interstitial atoms in the host lattice. Among possible candidate defects, we have considered the elementary hexagonal, tetrahedral, 1 1 0-split interstitials, the Bond-defect and one type of tetra-interstitial cluster. For each defect model a large Si supercell was populated with a proper defect depth distribution and then it was structurally relaxed by the application of the classical EDIP potential. This model system was then given as an input to the MC-BCA simulation code and the spectra corresponding to nine different axial and planar alignments were calculated. For low defect concentration (a few atomic percent), the scattering yields are strongly dependent on the orientation and a distinct signature characteristic of the limited number of allowed interstitial positions in Si could be found. The comparison of simulations and experiments in the case of 180 keV self ion implantation allowed the identification of the dominant interstitial defect whose structural properties are represented by the split-1 1 0 interstitial. By increasing the concentration of defects (and their mutual interaction) the technique looses sensitivity and, at the same time, the contribution of lattice relaxation becomes important. Under these conditions, although the RBS-C response becomes similar to the one obtained from a random distribution of displaced atoms, the major structural features of a heavily damaged sample could be still observed.     

Neon implantation and the radiation enhanced diffusion of platinum for the local lifetime control in high-power silicon diodes

About 10 MeV helium and 120 MeV neon implantations were used for the local lifetime control of silicon power diodes with subsequent annealing at 200 °C. DLTS measurements show that the concentration ratio between VO^(–/0) pairs and divacancies after the implantation of neon is close to one in agreement with the data published for other heavy ions. The implantation dose to achieve the same point at the technology curve of the diodes under test was found about 10 times lower for the neon compared to helium. The radiation enhanced diffusion (RED) of platinum at 725 °C was evaluated both for the enhancement by implantation of helium and neon. The electrical parameters of silicon diodes (carrier lifetime, voltage drop, leakage current and reverse recovery) were compared. One order lower implantation dose of the neon compared to that of the helium was found necessary to obtain the same improvement of electrical parameters. The RED of Pt using the neon implantation was found functional in a similar way to that of the helium. The reduction of carrier lifetime, which would be normally sufficient for robust diodes, was found for the doses of neon at about 1 × 10¹³ cm⁻². However, the simultaneous increase of background doping concentration at the end of range of neon, which increases electric field, was found responsible for the decreased static breakdown voltage, decreased turn-off ruggedness and increased leakage current.     

Ion-irradiation-induced athermal annealing of helium bubbles in SiC

We have compared the microstructural evolution of helium bubbles under ion irradiation and high temperature annealing. 4H-SiC was irradiated first by 140 keV He ions to a fluence of 1.0 × 10¹⁷ cm⁻² and then annealed at 1200 K for 30 min. Then, the samples were either irradiated by 2 MeV He ions to a fluence of 3.0 × 10¹⁶ cm⁻² at room temperature or annealed additionally at 1200 K for 30 min. Before and after 2 MeV He ion irradiation, significant microstructural changes were observed, similar to effects of high temperature annealing. Thus, the study provides evidence of ion-irradiation-induced athermal annealing on defect Ostwald ripening process and bubble evolution. Possible mechanisms are discussed.     

The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy

The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The S-parameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases with annealing temperature from 673 to 1373 K. At low annealing temperatures ranging from room temperature to 673 K, argon-decorated vacancies are formed by argon atoms combining with open-volume defects at inactive positron sites. With further increase of annealing temperature, argon-decorated vacancies dissociate and subsequently migrate and coalesce, leading to an increase of S-parameter. Furthermore, the buried vacancy-layer becomes narrow with increasing annealing temperature. At 1373 K, the buried vacancy-layer moved towards the sample surface.     

Ion–solid interactions and defects in silicon carbide

Experimental and computational approaches are used to study the defects, defect clusters and long-range structural disorder produced by interaction of energetic ions with silicon carbide (SiC). The accumulation and recovery of disorder on the Si and C sublattices are determined by ion-beam analysis methods in channeling geometry. Ab initio calculations have determined the most stable interstitial configurations, which are consistent with multi-axial channeling measurements. Molecular dynamics (MD) methods have been used to study both the energy dependence of defect production and the dynamic processes of cascade overlap. The experimental measurements of damage accumulation and the results of MD are consistent with each other. Thus, the integration of experimental and computational studies is providing atomic-level understanding of irradiation-induced defects and disordering processes in SiC.     

Distribution of implanted ions in seeds and roots of mung bean

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Investigation of MeV-Cu implantation and channeling effects into porous silicon formation

P-type (1 1 1) silicon wafers were implanted by copper ions (2.5 MeV) in channeling and random directions using ion beam accelerator of the Atomic Energy Commission of Syria (AECS). The effect of implantation direction on formation process of porous silicon (PS) using electrochemical etching method has been investigated using scanning electron microscope (SEM) and photoluminescence (PL) techniques. SEM observations revealed that the size, shape and density of the formed pores are highly affected by the direction of beam implantation. This in turn is seen to influence the PL behavior of the PS.     

低能离子束辐照增强表达的水稻基因半定量分析

应用基因芯片技术,发现了低能N+离子束辐照处理下多个表达上调的水稻基因,其中有5个参与植物胁迫反应和调控细胞数量的基因:NBS-LRR1、NBS-LRR2、PGPS/D12、Pherophorin-S前体物、天冬氨酸肽链内切酶。为了研究这5个基因在低能N+离子束辐照水稻苗期的表达特征,采用半定量法检测不同剂量辐照下水稻萌发72 h、96 h、120 h时幼苗中这5个基因的表达水平。RT-PCR结果表明,离子束辐照可显著地改变NBS-LRR1、NBS-LRR2、PGPS/D12、Pherophorin-S前体物及天冬氨酸肽链内切酶的转录水平,为研究离子束诱变的分子机制提供了目标基因。     

Computer simulation of ion beam analysis: Possibilities and limitations

Quantitative application of ion beam analysis methods, such as Rutherford backscattering, elastic recoil detection analysis, and nuclear reaction analysis, requires the use of computer simulation codes. The different types of available codes are presented, and their advantages and weaknesses with respect to underlying physics and computing time requirements are discussed. Differences between different codes of the same type are smaller by about one order of magnitude than the uncertainty of basic input data, especially stopping power and cross section data. Even very complex sample structures with elemental concentration variations with depth or laterally varying structures can be simulated quantitatively. Laterally inhomogeneous samples generally result in an ambiguity with depth profiles. The optimization of ion beam analysis measurements is discussed, and available tools are presented.     

Influence of nitrogen ion implantation energies on surface chemical bonding structure and mechanical properties of nitrogen-implanted silicon carbide ceramics

Nitrogen ions were implanted into silicon carbide ceramics (N⁺-implanted SiC) at different ions energies. The surface chemical bonding structure of N⁺-implanted SiC ceramics were investigated by using X-ray photoelectron spectroscopy (XPS). The hardness of N⁺-implanted SiC ceramics was measured using nano-indenter, and the friction and wear properties of the N⁺-implanted SiC/SiC tribopairs were studied using ball-on-disk type tribo-meter in water lubrication. The wear tracks were observed using non-contact surface profilometer and scanning electron microscope (SEM). The results showed that the surface roughness of N⁺-implanted SiC ceramic was higher than that of SiC ceramic, and some chemical bonds such as Si–N, C–C, CN and C–N bonds were formed in N⁺-implanted layer besides Si–C bonds. In comparison of SiC ceramic’s hardness, the hardness of N⁺-implanted SiC ceramics at 30 and 50 keV was higher while that at 65 keV was lower. Under water lubrication, the friction coefficient and the specific wear rates for the N⁺-implanted SiC/SiC tribopairs were all lower than those of the SiC/SiC tribopairs, and displayed the lowest values at 50 keV. According to XPS analysis, it was concluded that the high wear resistance and low friction coefficient for the N⁺-implanted SiC/SiC tribopairs were attributed to the formation of carbon rich composite on the surface of N⁺-implanted SiC ceramics.     

Simulation of ion beam induced crystallization and amorphization in (0 0 1) silicon

The ion beam induced epitaxial crystallization (IBIEC) and the ion beam induced interfacial amorphization (IBIIA) in (0 0 1) silicon caused by 3 MeV Si⁺ and 3 MeV Au⁺ irradiation at 293 K and 623 K are investigated by using a combination of binary collision MC simulations and MD simulations. The energy and angular distribution of the primary recoils is calculated by TRIM and the subcascades caused by the primary recoils are treated by classical MD simulations using a correspondingly large MD cell with 49152 atoms. The resulting topological interface structure is analyzed and compared with that obtained by thermally activated solid phase epitaxy. The rates of crystallization and amorphization are calculated and compared with experimental data. Especially, their dependence on the nuclear deposited energy is discussed.     

Study on Screening of TaGA2ox1 Mutants in Wheat by Ion Beam Irradiation

As a kind of mutagen, ion beam irradiation can create abundant biological mutations. A population of about 2000 lines was generated by irradiating dry wheat seeds of XiaoYan 81 with low-energy nitrogen ion beams. The traits of the plant, such as height, spike type, fertility, stem color and awn length, were investigated. The mutation rate in terms of the plant height in M2 was 2.9%. Eighteen deletion mutants of TaGA2ox1 were obtained. Associate analysis showed that TaGA2ox1 was closely related to the plant height. Most of the TaGA2ox1-deleted mutants were higher than the control, suggesting that the biological function of TaGA2ox1 is similar to its homologues in other plants. These results demonstrate that ion beam irradiation is an efficient tool in the construction of a mutant library for wheat.     

Quantitative characterization of xenon bubbles in silicon: Correlation of bubble size with the damage generated during implantation

Making use of Fresnel fringe contrast under different focusing conditions in transmission electron microscopy (TEM), we present a detailed evaluation of the depth dependent size distribution of gas bubbles contained in a stationary profile of 40 keV Xe implanted in Si. Voids generated during sample preparation by ion milling were also characterized carefully. The largest bubbles, with mean and maximum sizes of 5 and 7 nm, respectively, were observed at depths <22 nm. However, the first 2 nm of the sample did not contain any bubbles. Towards the end of range the bubble size decreased rapidly. No bubbles were found beyond 45 nm (the minimum size of detectable bubbles was estimated to be about 1.8 nm). Some observations suggest that the bubbles were over-pressurized. The derived data could be converted to a depth dependence of the Xe concentration contained in bubbles, n_Xe,b. Comparison with the previously reported depth distribution of Xe measured by Rutherford backscattering spectrometry (RBS), n_Xe,b turned out to be depth dependent, with a maximum of ∼28% in the region of maximum bubble size. n_Xe,b is shown to correlate closely with the damage density generated during Xe implantation. The findings lead to a model of bubble formation which involves the idea that the redistribution and transport processes initiated by ion impact take place mostly during the lifetime of the collision cascade.     

离子辐照对生防菌BJ1的诱变研究及菌种鉴定

为了提高生防菌BJl的抑菌能力,优化辐照诱变的物理参数,获得生防效果更好的高效菌种,利用12C6+对生防菌BJ1进行不同剂量离子辐照处理.结果表明,采用100 Gy剂量辐照的生防菌BJ1的存活率最高,并且在0～100 Gy之间,存活率先降后升,其存活曲线呈"鞍型";从诱变效果看,经400 Gy辐照诱变获得的生防菌BJ1的抑菌效果有明显提高;综合存活和抑菌效果考虑,离子辐照诱变生防菌BJ1的最适剂量为200～400 Gy.通过16S rDNA序列分析,将辐照诱变获得的BJ1菌株定为枯草芽孢杆菌.     

用时间分辨反射率技术研究硅的固相外延

用时间分辨反射率技术实时测量了Ｓｉ＋、Ａｓ＋注入单晶硅的固相外延生长速率和外延层厚度，并与背散射沟道方法测得的非晶层厚度进行了比较。介绍了测量原理，分析了实验结果．     

Structure and morphology of ion irradiated Au nanocrystals in SiO2

We have investigated the effect of ion irradiation on the structure and morphology of Au nanocrystals (NCs) fabricated by ion beam synthesis in a thin SiO₂ layer on a Si substrate. Extended X-ray absorption fine structure (EXAFS) spectroscopy measurements show a significant drop in the average Au–Au coordination, as well as a loss of medium and long range order with increasing irradiation dose. Small angle X-ray scattering (SAXS) measurements reveal a concomitant reduction in average NC size. These observations are a consequence of structural disorder and collisional mixing induced by the irradiation. The observed reduction in average Au–Au coordination by EXAFS differs significantly from that estimated from the average NC sizes evaluated using SAXS. This behavior can be explained by the dissolution of Au NCs into the SiO₂ matrix. A significant bond-length contraction indicates that part of this material forms small Au clusters (dimers, trimers, etc.) during irradiation that cannot be detected by SAXS. Combining the results from SAXS and EXAFS measurements, we estimate the volume fraction of such clusters.     

Gettering of copper impurity in silicon by aluminum precipitates and cavities

Al precipitates as well as cavities (or open-volume defects) are known for their ability to getter impurities within Si. In order to compare their relative gettering strength we produced both Al precipitates and cavities at different depths within one Si wafer. This was done by H+ and Al+ implantation with different energies and subsequent annealing process, resulting in Al-Si alloy and cavities at depth of 300 nm and 800 nm, respectively. Cu was then implanted with an energy of 70 keV to a fluence of 1 X 1014 / cm". The Cu implanted samples were annealed at temperature from 700C to 1200C. It was found that Cu impurities were gettered primarily by the precipitated Al layer rather than by cavities at the temperature of 700~1000C, while gettering of Cu occured in both regions at the temperature of 1200C. The secondary ion mass spectrometry and transmission electron microscopy analyses were used to reveal the interaction between Cu impurities and defects at different trap sites.