Effect of gamma irradiation on a polymer electrolyte: Variation in crystallinity, viscosity and ion-conductivity with dose

PEO(1 − x)NH₄ClO₄(x) samples with x = 0.18 are irradiated with gamma doses varying up to 50 kGy. DSC and XRD studies indicate, in general, a decrease in crystallinity with dose. Measurement of viscosity of aqueous solutions of the irradiated samples at the same concentration, shows that there is overall chain scission on irradiation, though there is evidence of some cross-linking also at higher doses. This is corroborated by FTIR measurements. The ion-conductivity shows a strong increase for irradiation dose 35 kGy. This suggests that there is a possibility of improving polymer electrolyte properties on gamma irradiation.     

Beneficial effect of gamma irradiation on the N-deacetylation of chitin to form chitosan

The effect of gamma irradiation on the N-deacetylation of chitin to form chitosan was studied. Chitin from crab shells was irradiated up to 20 kGy and N-deacetylated in aqueous NaOH solution (40% and 60% w/w) at 60 and 100 °C for 60 min. The degree of N-deacetylation (DD) of non-irradiated and irradiated samples was determined by IR-band ratio method. It was found that higher extent of N-deacetylation was achieved for the chitin samples irradiated up to 20 kGy doses as compared to non-irradiated chitin. The DD values of chitin, prepared from non-irradiated and 20 kGy irradiated chitins by N-deacetylation at 60 °C with 40% NaOH for 60 min, were found to be 38% and 60%, respectively. The increase in DD by irradiation was interpreted as a result of reduction in molecular weight of chitin. Low dose irradiation of chitin has provided the possibility of its N-deacetylation into chitosan at much milder reaction conditions.     

Investigations on the effect of 100 MeV Ni ions irradiated chloride vapour phase epitaxy (Cl-VPE) grown GaN epilayers

Gallium nitride (GaN) epilayers have been grown by chloride vapour phase epitaxy (Cl-VPE) technique and the grown GaN layers were irradiated with 100 MeV Ni ions at the fluences of 5 × 10¹² and 2 × 10¹³ ions/cm². The pristine and 100 MeV Ni ions irradiated GaN samples were characterized using X-ray diffraction (XRD), UV-visible transmittance spectrum, photoluminescence (PL) and atomic force microscopy (AFM) analysis. XRD results indicate the presence of gallium oxide phases after Ni ion irradiation, increase in the FWHM and decrease in the intensity of the GaN (0 0 0 2) peak with increasing ion fluences. The UV-visible transmittance spectrum and PL measurements show decrease in the band gap value after irradiation. AFM images show the nanocluster formation upon irradiation and the roughness value of GaN increases with increasing ion fluences.     

FTIR and DSC studies on gamma irradiated P(VdF-HFP) fluoropolymers applied to dosimetry

Radiation effects on semicrystalline poly(fluorovinylidene-co-hexafluoropropylene) copolymer [P(VdF-HFP)] induced by high-energy irradiation were investigated. Films with 150 μm thickness were irradiated with gamma doses ranging from 1.0 kGy to 3.0 MGy. Fourier transform infrared (FTIR) spectroscopy was used to follow the radio-induction of new molecular bonds. Differential scanning calorimetry (DSC) was employed to study the crystalline degradation of the irradiated samples. P(VdF-HFP) copolymers have fluorinated monomers [-CF₂-CF-CF₃-] randomly added to the [-CH₂-CF₂-] main chain of PVdF homopolymer. In this case, the [-CF₃-] molecular bonds are branched to the main chain. There is an increasing interest about the effect of high gamma radiation dose on the P(VdF-HFP) radiolysis, once it could enhance some of their already known interesting properties such as biomedical applications and electrostrictive transducers/actuators. FTIR spectroscopic data revealed two optical absorption bands at 1730 and 1754 cm⁻¹ whose intensities are unambiguously related to gamma delivered dose ranging from 0.0 to 1000 kGy. Fading analysis has demonstrated no loss of signal until 11 months after irradiation. DSC and XRD data revealed a continuous decrease in both the melting latent heat and crystalline dimensions for doses ranging from 250 to 3000 kGy. Because of the low fading and the linear behavior with respect to delivered gamma doses of the absorption band at 1754 cm⁻¹, P(VdF-HFP) copolymers are good candidates for being explored for high gamma dose dosimetry application.     

Preparation of polymer-coated separators using an electron beam irradiation

A polymer-coated polyethylene (PE) separator was prepared by a dip-coating of PVDF-HFP/PEGDMA on both sides of a PE separator followed by an electron beam irradiation. The thermal and electrochemical properties of the polymer-coated PE separator were investigated by using FT-IR, SEM, DSC and an impedance analyzer. The results showed that the coated PVDF-HFP/PEGDMA layer was covalently bound to the PE separator and also crosslinked by an electron beam irradiation. Thermal shrinkage dramatically decreased with an increase in the absorption dose and the PEGDMA content due to the crosslinking of the coated PVDF-HFP/PEGDMA by an irradiation. The PE separator coated with the composition of PVDF-HFP/PEGDMA (9.5/0.5) and irradiated to 150 kGy showed the highest electrolyte uptake of 125% and ionic conductivity of 3.82 × 10⁻⁴ S/cm at room temperature.     

Swift iodine ion modification of the structural and magnetotransport properties of Fe/Cr systems

Fe/Cr/Fe trilayers and (Fe/Cr)₂₀ multilayers prepared under ultrahigh vacuum conditions by thermal evaporation were irradiated with 200 MeV I¹³⁺ ions in the fluence range between 1 × 10¹¹ and 8 × 10¹² I/cm². The structural properties of the Fe/Cr/Fe trilayers and (Fe/Cr)₂₀ multilayers were measured by X-ray reflectivity (XRR) and conversion electron Mössbauer spectroscopy (CEMS). Magnetic exchange coupling between the Fe layers through the Cr spacer layer was observed by SQUID magnetization measurements. Magnetoresistance effect was measured using four probe method at room temperature. The XRR spectra showed an increase of the interface roughness versus increasing irradiation fluence in the multilayers, while in the trilayers smoothening of the interfaces in the sample irradiated with fluence equal to 4 × 10¹¹ I/cm² and very slight change for other fluences were observed. Improving of the interface structure in the trilayers at this fluence was observed also by CEMS. Moreover the Mössbauer spectra also confirm roughening of the interfaces as a function of fluence for multilayers. Before irradiation an antiferromagnetic coupling fraction dominated in all samples. After irradiation the changes of magnetic coupling were different in both types of samples. The trilayers were less sensitive to the irradiation fluence than multilayers and an increase of the antiferromagnetic fraction at small fluences was observed. In the multilayers a continuous decrease of the antiferromagnetic fraction as a function of fluence was evidenced. Vanishing of the antiferromagnetic coupling, observed for the largest fluence, resulted in the decrease of magnetoresistance effect in the Fe/Cr multilayers.     

DSC studies of retrogradation and amylose-lipid complex transition taking place in gamma irradiated wheat starch

The effect of gamma irradiation (⁶⁰Co) with doses of 5-30 kGy on the amylose-lipid complex transition and retrogradation occurring in gels containing ca. 50% and ca. 20% wheat starch was studied by differential scanning calorimetry (DSC) during heating-cooling-heating cycles (up to three cycles). Transition of the amylose-lipid complex occurs in all the irradiated samples at a lower temperature as compared to the non-irradiated starch. That effect was larger when the radiation dose was higher. A further thermal treatment causes a decrease of the transition temperature in the irradiated samples, with no effect or increase of that temperature observed for the non-irradiated ones. Irradiation hinders retrogradation taking place in 50% gels but facilitates the process occurring in 20% gels. The differences between the irradiated and the non-irradiated samples are more evident in the every next heating or cooling cycle as well as after storage and in the case of ca. 50% suspensions as compared to ca. 20% suspensions. The results point out to the deterioration of the structure of the complexes formed in the irradiated starch as compared to the non-irradiated one.     

8 MeV electron irradiation effects in silicon photo-detectors

Results of investigations on the electrical properties of n⁺-p-p⁺ silicon (Si) photo-detectors irradiated with 8 MeV electrons are presented. The photo-detectors were irradiated with electrons of doses up to 100 kGy. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics under dark conditions were measured as a function of dose. A significant change in the diffusion component of the saturation current is observed after irradiation, while the generation-recombination component of the saturation current remains almost unchanged. The series resistance is found to increase with increasing dose while the shunt resistance and carrier concentration decrease with dose. Optoelectronic properties, namely short circuit current I_sc, open circuit voltage V_oc under air mass zero illumination and spectral response, were measured at various doses. From the spectral responses of the devices, the minority carrier diffusion length was estimated.     

Effect of swift heavy ion irradiation on nanocrystalline CaS:Bi phosphors: Structural, optical and luminescence studies

Luminescence studies of CaS:Bi nanocrystalline phosphors synthesized by wet chemical co-precipitation method and irradiated with swift heavy ions (i.e. O⁷⁺-ion with 100 MeV and Ag¹⁵⁺-ion with 200 MeV) have been carried out. The samples have been irradiated at different ion fluences in the range 1 × 10¹²-1 × 10¹³ ions/cm². The average grain size of the samples before irradiation was estimated as 35 nm using line broadening of XRD (X-ray diffraction) peaks and TEM (transmission electron microscope) studies. Our results suggest a good structural stability of CaS:Bi against swift heavy ion irradiation. The blue emission band of CaS:Bi³⁺ nanophosphor at 401 nm is from the transition ³P₁ → ¹S₀ of the Bi³⁺. We have observed a decrease in lattice constant (a) and increase of optical energy band gap after ion irradiation. We presume this change due to grain fragmentation by dense electronic excitation induced by swift heavy ion. We have studied the optical and luminescent behavior of the samples by changing the ion energy and also by changing dopant concentration from 0.01 mol% to 0.10 mol%. It has been examined that ion irradiation enhanced the luminescence of the samples.     

Gamma irradiation-aided chitin/chitosan extraction from prawn shells

Chitin and chitosan were extracted from prawn shells. The influence of a 25 kGy irradiation dose on the deproteination process was investigated. The deproteination degree was followed by Lowry-Folin method. The demineralisation degree versus reaction time with 1 N hydrochloric acid solution was followed by atomic absorption spectrometry.Chitin and chitosan obtained were characterised by FTIR spectrometry. The influence of some parameters, such as reaction time, alkaline concentration and temperature on the deacetylation degree was also investigated. The deacetylation degree was evaluated by FTIR spectrometry using the bands at 1320 cm⁻¹ and 1420 cm⁻¹.It was found that the irradiation of the shells at a dose of 25 kGy reduces the time of the deproteination reaction by a factor of three, comparatively to the non-irradiated samples.     

Radiation effects on PbO-Al2O3-B2O3-SiO2 glasses by FTIR spectroscopy

The infrared absorption spectra of PbO-Al₂O₃-B₂O₃-SiO₂ glasses have been measured in the spectral range 600-4000 cm⁻¹ before and after absorbed dose of 50 Gy, 4 kGy and 50 kGy to investigate the structural change due to irradiation. The structural change due to composition has also been discussed. The experimental results clearly indicate that after irradiation, a significant change in structure of lead alumino borosilicate glass network is observed. It was shown that BO₄ groups decreases and BO₃ groups increases with the increase of Al₂O_3.     

Change in magnetic properties of MgB2 thin films after irradiation by 200 MeV Au ion beam

The SHI irradiation induced effects on magnetic properties of MgB₂ thin films are reported. The films having thickness 300-400 nm, prepared by hybrid physical chemical vapor deposition (HPCVD) were irradiated by 200 MeV Au ion beam (S_e ∼ 23 keV/nm) at the fluence 1 × 10¹² ion/cm². Interestingly, increase in the transition temperature T_c from 35.1 K to 36 K resulted after irradiation. Substantial enhancement of critical current density after irradiation was also observed because of the pinning provided by the defects created due to irradiation. The change in surface morphology due to irradiation is also studied.     

Ion irradiation effects on surface mechanical behavior and shrinkage of hybrid sol-gel derived silicate thin films

A study of the effects of ion irradiation on the surface mechanical behavior and shrinkage of organic/inorganic modified silicate thin films was performed. The films were synthesized by sol-gel processing from tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto Si substrates. The sol viscosity and the spin velocity were adjusted so that the films produced had a final thickness ranging from 580 to 710 nm after heat treatment. The ion species and incident energies used were selected such that the projected ion range was greater than the film thickness, resulting in fully irradiated films. After heat treatment at 300 °C for 10 min, the films were irradiated with 125 keV H⁺, 250 keV N²⁺ and 2 MeV Cu⁺ ions with fluences ranging from 1 × 10¹⁴ to 1 × 10¹⁶ ions/cm². Both hardness and reduced elastic modulus were seen to exhibit a monotonic increase with fluence for all three ion species. Also, H loss was found to increase monotonically with increase in fluence, while the film thickness was found to decrease with increase in fluence.     

Evolution of the nanostructure of VVER-1000 RPV materials under neutron irradiation and post irradiation annealing

A high nickel VVER-1000 (15Kh2NMFAA) base metal (1.34 wt% Ni, 0.47% Mn, 0.29% Si and 0.05% Cu), and a high nickel (12Kh2N2MAA) weld metal (1.77 wt% Ni, 0.74% Mn, 0.26% Si and 0.07% Cu) have been characterized by atom probe tomography to determine the changes in the microstructure during neutron irradiation to high fluences. The base metal was studied in the unirradiated condition and after neutron irradiation to fluences between 2.4 and 14.9 × 10²³ m⁻² (E > 0.5 MeV), and the weld metal was studied in the unirradiated condition and after neutron irradiation to fluences between 2.4 and 11.5 × 10²³ m⁻² (E > 0.5 MeV). High number densities of ∼2-nm-diameter Ni-, Si- and Mn-enriched nanoclusters were found in the neutron irradiated base and weld metals. No significant copper enrichment was associated with these nanoclusters and no copper-enriched precipitates were observed. The number densities of these nanoclusters correlate with the shifts in the ΔT_{41 J} ductile-to-brittle transition temperature. These nanoclusters were present after a post irradiation anneal of 2 h at 450 °C, but had dissolved into the matrix after 24 h at 450 °C. Phosphorus, nickel, silicon and to a lesser extent manganese were found to be segregated to the dislocations.     

Swelling and optical properties of Si3N4 films irradiated in the electronic regime

Silicon nitride layers of 140 nm thickness were deposited on silicon wafers by low pressure chemical vapour deposition (LPCVD) and irradiated at GANIL with Pb ions of 110 MeV up to a maximum fluence of 4 × 10¹³ cm⁻². As shown in a previous work these irradiation conditions, characterized by a predominant electronic slowing-down (S_e = 19.3 keV nm⁻¹), lead to damage creation and formation of etchable tracks in Si₃N₄. In the present study we investigated other radiation-induced effects like out of plane swelling and refractive index decrease. From profilometry, step heights as large as 50 nm were measured for samples irradiated at the highest fluences (>10¹³ cm⁻²). From optical spectroscopy, the minimum reflectivity of the target is shifted towards the high wavelengths at increasing fluences. These results evidence a concomitant decrease of density and refractive index in irradiated Si₃N₄. Additional measurements, performed by ellipsometry, are in full agreement with this interpretation.     

Effect of swift heavy ion irradiation on structure, optical, and gas sensing properties of SnO2 thin films

Swift heavy ion irradiation has been successfully used to modify the structural, optical, and gas sensing properties of SnO₂ thin films. The SnO₂ thin films prepared by sol-gel process were irradiated with 75 MeV Ni⁺ beam at fluences ranging from 1 × 10¹¹ ion/cm² to 3 × 10¹³ ion/cm². Structural characterization with glancing angle X-ray diffraction shows an enhancement of crystallinity and systematic change of stress in the SnO₂ lattice up to a threshold value of 1 × 10¹³ ions/cm², but decrease in crystallinity at highest fluence of 3 × 10¹³ ions/cm². Microstructure investigation of the irradiated films by transmission electron microscopy supports the XRD observations. Optical properties studied by absorption and PL spectroscopies reveal a red shift of the band gap from 3.75 eV to 3.1 eV, and a broad yellow luminescence, respectively, with increase in ion fluence. Gas response of the irradiated SnO₂ films shows increase of resistance on exposure to ammonia (NH₃), indicating p-type conductivity resulting from ion irradiation.     

Microstructure and elemental distribution of americium-containing uranium plutonium mixed oxide fuel under a short-term irradiation test in a fast reactor

In order to investigate the effect of americium addition in MOX fuel on the irradiation behavior, the ‘Am-1’ program is being conducted in the experimental fast reactor Joyo. The Am-1 program consists of two short-term irradiation tests of 10 min and 24 h irradiations and a steady-state irradiation test. The short-term irradiation tests were successfully completed and the post irradiation examinations (PIEs) are in progress. This paper reports on the results of PIEs for Am-containing MOX fuel irradiated for 10 min. MOX fuel pellets containing 3% or 5% Am were fabricated in a shielded air-tight hot cell using a remote handling technique. The oxygen to metal ratio (O/M) of these fuel pellets was 1.98. They were irradiated at peak linear heating rate of about 43 kW m⁻¹. Focus was being placed on migration behavior of Am during the irradiation. The ceramography results showed that structural changes such as lenticular pores and a central void occurred early, within the brief 10 min of irradiation. The results of electron probe microanalysis revealed that the concentration of Am increased in the vicinity of the central void.     

Effect of Co γ-ray irradiation on electrical properties of GaAs epilayer and GaAs p-i-n diode

GaAs epilayers and p-i-n diodes structures grown using metal-organic vapor phase epitaxy were irradiated at room temperatures by ⁶⁰Co γ-ray radiation with varying the dose up to 50 kGy. The carrier concentration and mobility on GaAs epilayer decreases while leakage current of p-i-n diode increases at higher radiation dose (10-50 kGy). However at lower dose (<6 kGy) carrier mobility remain same but leakage current still shows significant increase. Furthermore carrier mobility of irradiated GaAs epilayers recovers partially (68%) after annealing at 300 °C while leakage current of p-i-n diode does not show any noticeable recovery. These effects are mainly due to the creation of more deep levels compared to shallow levels as determined from photoluminescence, Hall, current-voltage and electrochemical capacitance voltage analysis.     

Thermoluminescence properties of irradiated chickpea and corn

A study was carried out to establish a detection method for irradiated chickpea and corn by thermoluminescence (TL) method. The leguminous were packed in polyethylene bags and then the packets were irradiated at room temperature at different doses by ⁶⁰Co gamma source at 1, 4, 8 and 10 kGy. Minerals extracted from the leguminous were deposited onto a clean aluminum disc and TL intensities of the minerals were measured by TL. It was observed that the extracted samples from both leguminous exhibit good TL Intensity and the TL intensity of glow curves of them increased proportionally to irradiation doses. The TL glow curve of both irradiated leguminous presents a single broad peak below 400 °C. The TL trapping parameters glow peaks were estimated by the additive dose (AD), T_m(E_a)-T_stop and computerized glow curve deconvolution (CGCD) methods. The fading characteristics of glow curves were also recorded up to 6 months.     

Magnetic behaviour of nanosized zinc ferrite under heavy ion irradiation

Present investigation reports the effect of 100 MeV oxygen beam on the magnetic properties of zinc ferrite nanoparticles. The nanoparticles for this study were synthesized by using the nitrates of zinc and iron in the matrix of citric acid and by sintering the precursor at 500 and 1000 °C. Both these samples were irradiated by 100 MeV oxygen beam with two different fluence 1 × 10¹³ and 5 × 10¹³ ions/cm². Besides the presence of cubic spinel phase, ZnO phase appears after the irradiation in both the samples. A decrease in average particle size was observed in the irradiated samples as estimated by X-ray diffraction pattern. The magnetization versus applied field curves show the decrease in magnetization with the fluence of the beam, which is attributed to the ZnO phase. The thermal magnetization curve for the sample ZF500 shows almost constant value of blocking temperature after irradiation whereas for ZF1000 it increases from 18 K to 32 K at a fluence of 5 × 10¹³ ions/cm².