Barrier modification of Au/n-GaAs Schottky diode by swift heavy ion irradiation

The effect of swift heavy ion (72.5 MeV ⁵⁸Ni⁶⁺) irradiation on Au/n-GaAs Schottky barrier characteristics is studied using in situ current-voltage measurements. Diode parameters are found to vary as a function of ion irradiation fluence. The Schottky barrier height (SBH) is found to be 0.55(±0.01) eV for the as deposited diode, which decreases with ion irradiation fluence. The SBH decreases to a value of 0.49(±0.01) eV at the highest ion irradiation fluence of 5 × 10¹³ ions cm⁻². The ideality factor is found to be 2.48 for unirradiated diode, and it increases with irradiation to a value of 4.63 at the highest fluence. The modification in Schottky barrier characteristics is discussed considering the energy loss mechanism of swift heavy ion at the metal-semiconductor interface.     

Effect of swift heavy ion irradiation on hydrothermally synthesized hydroxyapatite ceramics

The effect of swift heavy ion irradiation on hydroxyapatite (HAp) ceramic - a bone mineral was investigated. The irradiation experiment was conducted using oxygen ions at energy of 100 MeV with three different fluences of 10¹², 10¹³, 10¹⁴ ions/cm². The irradiated samples were characterized by glancing angle X-ray diffraction (GXRD), atomic force microscopy (AFM), dynamic light scattering (DLS), photoluminescence spectroscopy (PL), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX). GXRD confirmed incomplete amorphisation of HAp with increase in fluence. There was considerable reduction in particle size on irradiation leading to nanosized HAp (upto 53 nm). PL studies showed emission in the visible wavelength region. The irradiated samples exhibited better bioactivity than the pristine HAp.     

d-wave superconductive gap and related observables of PuCoGa5

The real-axis formulation of the Eliashberg theory has been applied to PuCoGa₅, assuming d-wave symmetry and phonon-mediated pairing. Here, we present the calculated temperature dependence of the superconductive gap Δ(T) for a freshly prepared sample, and the variation of Δ(T = 2 K) with increasing impurity scattering rate. We also present the calculated energy dependence of the quasiparticle density of state, together with the corresponding normalized tunnelling conductance at T = 4 K. These quantities could be compared with future tunnelling experiments that would also lead to a direct determination of the spectral density function. Finally, we show that the normal phase resistivity can be well reproduced up to room temperature assuming electron-phonon scattering within a two-band model.     

Electron spin resonance investigations on ion beam irradiated single-wall carbon nanotubes

ESR investigations on single-wall carbon nanotubes irradiated with accelerated protons, helium ions, and neon ions are reported. All spectra were accurately simulated assuming that the resonance line is a convolution of up to 4 lines originating from catalyst residues, amorphous carbon, and electrons delocalized over the conducting domains of nanotubes. The faint line observed in irradiated nanotubes at g > 2.25 was assigned to magnetic impurities. However, there are no sufficient data to confirm that this line is connected to radiation-induced magnetism in carbon nanotubes. The generation of paramagnetic defects due to the bombardment of single-wall carbon nanotubes by accelerated ions is reported. These data correlate with previous Raman and thermal investigations on the same single-wall carbon nanotubes and reveals their sensitivity to ionizing radiation. The temperature dependence of ESR spectra in the range 25-250 K was used to identify the components of the ESR spectra.     

Modelling swift heavy ion irradiation in iron

Swift heavy ions moving in metals lose most of their energy to inelastic scattering of electrons. The energy deposited in the electronic system is transferred into the atomic system via electron-ion interactions and can lead to melting and creation of new damage and also annealing of pre-existing atomic defects. Using a combination of molecular dynamics and a consistent treatment of electron energy transfer and transport we have modelled experiments performed in Fe to investigate the annealing effect and damage creation under electronic excitations. We observe both annealing and new damage creation at low and high electronic stopping, respectively. Rapid separation of interstitial atoms and vacant lattice sites is seen due to efficient transport via replacement collision sequences. Our results suggest that the role of electronic excitation can be significant in modeling of the behaviour of metals under swift heavy ion irradiation and attempts to modify metals via ion implantation.     

Gamma irradiation of PolyEthyleneTerephthalate and PolyEthyleneNaphthalate

The effect of gamma irradiation in air is investigated in two thermoplastic polyesters (PET and PEN), in order to evaluate the influence of aromatic density and the role of oxygen on radiation resistance. EPR measurements were carried out to detect radical stability against oxygen permeation and to provide radical characterization. Viscometric data reveal a different behaviour between films and thick samples. Positron annihilation spectra show a decrease of ortho-positronium intensity, which is more marked in film samples. ortho-positronium lifetime does not depend on the radiation dose.     

Influence of a surfactant on single ion track etching: Preparing and manipulating cylindrical micro wires

The influence of the alkali resistant surfactant Dowfax 2A1 on single ion track etching in 30 μm polycarbonate foils is studied at low etch rate (5 M NaOH at 41.5 ± 2 °C) using electro conductivity measurements. At surfactant concentrations above 10⁻⁴ vol.% break-through times are predictable (Δt/t < 0.25). At high surfactant concentrations (?0.1 vol.%) the formation of cylindrical channels is favoured. The shape of these channels (length ? 26 μm, diameter ? 1.8 μm) is verified by electro-replication and SEM observation of the resulting wires. Agreement of radii is better than 0.1 μm. Depending on the current limit set during electro replication compact or hollow cylinders can be obtained. A technique for localizing and manipulating individual micro wires by their head buds is described.     

The influence of carbon ion irradiation on sweet sorghum seeds

The aim of this study is to investigate the effects of different doses of 100 MeV/u carbon ions on sweet sorghum seeds in order to improve crop yields and their sugar content. After irradiation, seeds were germinated and grown to 30 days, and others were sown in the field. At the end of harvesting season all planted seeds were picked separately and M2 generations obtained. The differences among the treatments were examined using the RAPD procedure. In the study done by using 38 primers; according to the amplification results, the differences among the various doses treatment were shown.     

Correlation between ion beam parameters and physical characteristics of nanostructures fabricated by focused ion beam

We report a study of the physical characteristics of the pillars of C, Pt and W grown by 10-30 keV Ga focused ion beam (FIB) as a function of Ga ion flux, and present a quantitative analysis of the elements using energy-dispersive analysis of X-rays (EDAX). All the FIB grown pillars exhibit a rough morphology with whisker like protrusions on the cylindrical surface and broadening of the base as compared to the nominal size. For a constant fluence, the height of the pillar initially increases and then reduces after going through a maximum as a function of ion flux in all the cases. The compositional analysis shows good metallic quality for Pt structures but reveals significant contamination of Ga in C and Ga and C in W structures at higher ion fluxes. Explanation to all these observations has been sought in the light of secondary ion and electron effects and the different processes involved which lead to the FIB induced deposition.     

Effect of swift heavy ion irradiation on nanocrystalline CaS:Bi phosphors: Structural, optical and luminescence studies

Luminescence studies of CaS:Bi nanocrystalline phosphors synthesized by wet chemical co-precipitation method and irradiated with swift heavy ions (i.e. O⁷⁺-ion with 100 MeV and Ag¹⁵⁺-ion with 200 MeV) have been carried out. The samples have been irradiated at different ion fluences in the range 1 × 10¹²-1 × 10¹³ ions/cm². The average grain size of the samples before irradiation was estimated as 35 nm using line broadening of XRD (X-ray diffraction) peaks and TEM (transmission electron microscope) studies. Our results suggest a good structural stability of CaS:Bi against swift heavy ion irradiation. The blue emission band of CaS:Bi³⁺ nanophosphor at 401 nm is from the transition ³P₁ → ¹S₀ of the Bi³⁺. We have observed a decrease in lattice constant (a) and increase of optical energy band gap after ion irradiation. We presume this change due to grain fragmentation by dense electronic excitation induced by swift heavy ion. We have studied the optical and luminescent behavior of the samples by changing the ion energy and also by changing dopant concentration from 0.01 mol% to 0.10 mol%. It has been examined that ion irradiation enhanced the luminescence of the samples.     

Investigations of structural, dielectric and optical properties on silicon ion irradiated glycine monophosphate single crystals

The 50 MeV silicon ion irradiation induced modifications on structural, optical and dielectric properties of solution grown glycine monophosphate (GMP) crystals were studied. The high-resolution X-ray diffraction study shows the unaltered value of integrated intensity on irradiation. The dielectric constant as a function of frequency and temperature was studied. UV-visible studies reveal the decrease in bandgap values on irradiation and presence of F-centers. The fluorescence spectrum shows the existence of some energy levels, which remains unaffected after irradiation. The scanning electron micrographs reveal the defects formed on irradiation.     

A SU-8 dish for cell irradiation

The objective of the CELLION project is radiation research at low doses. The main cell responses to low dose irradiation are bystander effects, genomic instability and adaptive responses. In order to study these effects it is convenient to make the cells addressable in space and time through locking the cell position. A new alternative dish has been developed for irradiation procedures at the Lund Nuclear Probe. The versatile dish can be used both to cultivate and to hold the cells during the irradiation procedure.The irradiation dish is made of an epoxy-based photopolymer named SU-8 chosen by its flexibility, non-toxicity and biological compatibility to cell attachment. It has been fabricated using a UV lithographic technique. The irradiation dish forms a 2 × 2 mm² grid which contains 400 squares. Each square has 80 μm side and is separated from neighbouring ones by 20 μm wide walls. The location of each square is marked by a row letter and column number patterned outside the grid.The Cell Irradiation Facility at the Lund Nuclear Probe utilizes protons to irradiate living cells. A post-cell detection set up is used to control the applied dose, detecting the number of protons after passing through the targeted cell. The transmission requirement is fulfilled by our new irradiation dish. So far, the dish has been used to perform non-targeted irradiation of Hepatoma cells. The cells attach and grow easily on the SU-8 surface. In addition, the irradiation procedure can be performed routinely and faster since the cells are incubated and irradiated in the same surface.     

First-principles investigation of site preference and bonding properties of neutral H in 3C-SiC

SiC can be extensively used in a space environment and other extreme conditions because of its superiority on radiation tolerance. H (proton) that generally exists in the space has large effects on the structure and properties of space materials such as SiC. We have performed the first-principles calculations based on density functional theory to investigate the site preference and bonding properties of neutral H in 3C-SiC. Spin polarization effect for H is taken into account. We show that the supercell should be large enough to diminish the H-H interaction due to the periodic boundary condition. Based on a series of calculations with different exchange-correlation schemes and potentials, we are able to determine the relative stability for different H configurations in SiC. The AB_C (anti-bond of C) configuration is shown to be the most energetically favorable, while the BC (bond center) and T_Si (tetrahedral interstitial of Si) configurations are less stable. We demonstrate that H prefers to form a stronger bond with C rather than Si, particularly in the BC configuration, in contrast to the previous study. Our results will provide a useful reference to the application of 3C-SiC in a space environment.     

Study of the temperature evolution of defect agglomerates in neutron irradiated molybdenum single crystals

Small angle neutron scattering as a function of temperature, differential thermal analysis, electrical resistivity and transmission electron microscopy studies have been performed in low rate neutron irradiated single crystalline molybdenum, at room temperature, for checking the evolution of the defects agglomerates in the temperature interval between room temperature and 1200 K. The onset of vacancies mobility was found to happen in temperatures within the stage III of recovery. At around 550 K, the agglomerates of vacancies achieve the largest size, as determined from the Guinier approximation for spherical particles. In addition, the decrease of the vacancy concentration together with the dissolution of the agglomerates at temperatures higher than around 920 K was observed, which produce the release of internal stresses in the structure.     

Synthesis of nanodimensional TiO2 thin films using energetic ion beam

Nanophases of TiO₂ are achieved by irradiating polycrystalline thin films of TiO₂ by 100 MeV Au ion beam at varying fluence. The surface morphology of pristine and irradiated films is studied by atomic force microscopy (AFM). Phase of the film before and after irradiation is identified by glancing angle X-ray diffraction (GAXRD). The blue shift observed in UV-vis absorption edge of the irradiated films indicates nanostructure formation. Electron spin resonance (ESR) studies are carried out to identify defects created by the irradiation. The nanocrystallisation induced by SHI irradiation in polycrystalline thin films is studied.     

Effect of 200 MeV Ag ion irradiation on structural and electrical transport properties of Fe3O4 thin films

Thin films of Fe₃O₄ have been deposited on single crystal MgO(1 0 0) and Si(1 0 0) substrates using pulsed laser deposition. Films grown on MgO substrate are epitaxial with c-axis orientation whereas, films on Si substrate are highly 〈1 1 1〉 oriented. Film thicknesses are 150 nm. These films have been irradiated with 200 MeV Ag ions. We study the effect of the irradiation on structural and electrical transport properties of these films. The fluence value of irradiation has been varied in the range of 5 × 10¹⁰ ions/cm² to 1 × 10¹² ions/cm². We compare the irradiation induced modifications on various physical properties between the c-axis oriented epitaxial film and non epitaxial but 〈1 1 1〉 oriented film. The pristine film on Si substrate shows Verwey transition (T_V) close to 125 K, which is higher than generally observed in single crystals (121 K). After the irradiation with the 5 × 10¹⁰ ions/cm² fluence value, T_V shifts to 122 K, closer to the single crystal value. However, with the higher fluence (1 × 10¹² ions/cm²) irradiation, T_V again shifts to 125 K.     

Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes

We have studied the influence of the ion species, ion energy, fluence, irradiation temperature and post-implantation annealing on the formation of shallow dislocation loops in silicon, for fabrication of silicon light emitting diodes. The substrates used were (1 0 0) Si, implanted with 20-80 keV boron at room temperature and 75-175 keV silicon at 100 and 200 °C. The implanted fluences were from 5 × 10¹⁴ to 1 × 10¹⁵ ions/cm². After irradiation the samples were processed for 15 s to 20 min at 950 °C by rapid thermal annealing. Structural analysis of the samples was done by transmission electron microscopy and Rutherford backscattering spectrometry. In all irradiations the silicon substrates were not amorphized, and that resulted in the formation of extrinsic perfect and faulted dislocation loops with Burgers vectors a/2〈1 1 0〉 and a/3〈1 1 1〉, respectively, sitting in {1 1 1} habit planes. It was demonstrated that by varying the ion implantation parameters and post-irradiation annealing, it is possible to form various shapes, concentration and distribution of dislocation loops in silicon.     

Systematics studies of (n, α) reaction cross sections at 14.5 MeV neutrons energy

A new semi-empirical formula for the calculation of the (n, α) cross-section at 14.5 MeV neutron energy is obtained. It is based on the pre-equilibrium exciton and evaporation models and uses the Droplet model of Myers and Swiatecki to express the reaction energy Q(n, α). The systematics behavior of the different terms of the Droplet model involved in Q(n, α) was checked individually before choosing the pertinent terms and setting up the formula. Fitting this formula to the existing cross-section data, the adjustable parameters have been determined and the systematics of the (n, α) reaction have been studied. The predictions of this formula are compared with those of the existing formulae and with the experimental data. The formula with five parameters is found to give a better fit to the data than the previous comparable formulae.     

Effect of electron beam irradiation on the viscosity of carboxymethylcellulose solution

In this study, the effects of an electron beam irradiation on the viscosity of a carboxymethylcellulose (CMC) solution were investigated. The viscosity of the CMC solution was decreased with an increase in the irradiation dose. Interestingly, the extent of the degradation of the CMC was found to decrease with an increase of the CMC concentration in the solution. The change of the average molar mass confirmed the decrease in the viscosity due to the degradation of the polymer. The energy of the electron beam also affected the degradation of the CMC. Lower degradation of the CMC was obtained with a decreasing electron beam energy due to its lower penetration. Addition of vitamin C as a radical scavenger to the solution and an irradiation at −70 °C were shown to be moderately effective in preventing a decrease in the viscosity of the solution by irradiation.     

Enhanced beam deflection in bent crystals using multiple volume reflection

This paper presents simulations of the trajectories of high-energy ions through several bent crystal layers. At certain layer alignments volume reflection occurs from each layer and the resultant multiple volume reflection angle is correspondingly increased, along with the range of entrance angles over which ions undergo volume reflection. Another feature is that the range of entrance angles for which bent crystal channeling occurs is also increased in passing through several bent layers. The use of several bent crystal layers to produce multiple volume reflection provides an alternative approach to the design of a space shield or radiation protection at accelerators based on bent crystals.