聚苯胺的离子注入掺杂研究

研究了聚苯胺的离子注入掺杂对导电性的影响。用红外和紫外谱法探讨了聚苯胺的氧化态，本征态和还原态经离子注入后，其结构可能发生的变化。结果表明，聚苯胺的三种态的离子注入均为还原过程。讨论了离子注入掺杂的导电机制。     

Monte-Carlo study of induced radioactivity in probe for low-energy proton beam

Induced radionuclides generated from the probe which is bombarded by proton beam will turn the detector into a typical external irradiation radiation source. Thus, it is beneficial for developing radiation protection to calculate the types and the activities of radionuclides. Here we applied both a theoretical analysis and a Monte-Carlo method to compute the induced radioactivity in a copper probe irradiated by proton beam. Various kinds of radionuclides saturation activity obtained by these two different methods were compared. The comparisons of the results cast by the two methods show the similar saturation activities for ⁶³Zn and ⁶⁵Zn. However, the Monte-Carlo method conducted by the software FLUKA is able to provide a more complete consideration on nuclear reaction, and to calculate both the direct and indirect radioactivity under different irradiation time. Furthermore, by employing the FLUKA Monte-Carlo program, the induced radioactivity of three types of probe materials (Cu, Ta and W) under low-energy (below 20 MeV) proton beam irradiated were also separately simulated and tantalum is considered as the best material for low-energy proton interceptive diagnostics probe due to the higher energy threshold of nuclear reaction and the lower radioactivity.     

Imaging principle and experiment results of an 11 MeV low-energy proton radiography system

Differing from radiography without lens system, the high-energy proton radiography(PRAD) uses Zumbro lens system to focus the penetrating protons. Since the Zumbro lens system is able to limit the range of multiple Coulomb scattering angles of the protons, the low-energy PRAD with Zumbro lens system is also feasible,although the attenuation of probing protons in the object is negligible. Low-energy PRAD is superior to the high-energy PRAD for diagnosing the objects of small thicknesses. To verify the imaging principle of Zumbro lens system, 11 MeV PRAD experiments were performed at the China Academy of Engineering Physics(CAEP)recently. The experiment results demonstrated that this 11 MeV PRAD was able to radiograph objects of area density less than 2.7 × 10-2 g/cm2 and the area density discrepancy less than 2.3% could be distinguished.     

Ge nano-layer fabricated by high-fluence low-energy ion implantation

A Ge nano-layer embedded in the surface layer of an amorphous SiO₂ film was fabricated by high-fluence low-energy ion implantation. The component, phase, nano-structure and luminescence properties of the nano-layer were studied by means of Rutherford backscattering, glancing incident X-ray diffraction, laser Raman scattering, transmission electron microscopy and photoluminescence. The relation between nano-particle characteristics and ion fluence was also studied. The results indicate that nano-crystalline Ge and nano-amorphous Ge particles coexist in the nano-layer and the ratio of nano-crystalline Ge to nano-particle Ge increases with increasing ion fluence. The intensity of photoluminescence from the nano-layer increases with increasing ion fluence also. Prepared with certain ion fluences, high-density nano-layers composed of uniform-sized nano-particles can be observed.     

低能离子注入在花生四烯酸(AA)高产菌株选育中的研究

利用低能离子束生物技术对花生四烯酸产生菌(Mortierella alpina)进行诱变选育。研究表明,在离子注入(10keV,3×1014N+/cm2)条件下,后代菌株离散程度明显高于自然分离。经连续诱变处理,最终获得一株花生四烯酸高产菌I49-N18,该菌每升培养液可得生物量26.3g,干菌体中油脂含量为33.8％,其中花生四烯酸的含量占总脂的52.36％。而其AA产量高达4.66g/L,比对照N7菌株产量提高126.2％,且继代遗传功能稳定,表明I49-N18是一株极具工业化前景的高产菌,同时证明离子注入是一种有效的诱变手段。     

Swelling or erosion on the surface of patterned GaN damaged by heavy ion implantation

Wurtzite undoped GaN epilayers (0 0 0 1) was implanted with 500 keV Au⁺ ions at room temperature under different doses, respectively. Ion implantation was performed through photoresist masks on GaN to produce alternating strips. The experimental results showed that the step height of swelling and decomposition in implanted GaN depended on ion dose and annealing temperature, i.e., damage level and its evolution. This damage evolution is contributed to implantation-induced defect production, and defect migration/accumulation occurred at different levels of displacement per atom. The results suggest that the swelling is due to the formation of porous structures in the amorphous region of implanted GaN. The decomposition of implanted area can be attributed to the disorder saturation and the diffusion of surface amorphous layer.     

Experimental study of proton scattering on carbon

Measurement of inelastic scattering cross sections of 8 MeV protons on carbon has been carried out in the 30-170° angular range. The excitation functions for the 1.73 MeV-resonance have been measured in the 1-2 MeV energy range at 110°, 115° and 150°. Measurements of the excitation functions have been compared with previous measurements and Gurbich evaluation.     

辐射法制备含氟磺酸型质子交换膜

含氟磺酸型质子交换膜是一类具有高热稳定性、化学稳定性及良好机械性能的离子交换膜，具有极其广阔的应用前景。采用辐射法制备了一种含氟磺酸型质子交换膜，分别测试了该膜的抗拉强度、面电阻、吸碱率等物理化学性能，通过扫描电镜观察了其表面形貌并对其在质子交换膜燃料电池中的应用进行了初步研究。     

Observation of the evanescent wave excited by proton beam

An exit angle dependence of the intensity of carbon K line during proton bombardment was measured to observe the evanescent wave. A Soller type spectrometer was used to measure the intensity of X-ray lines. A mirror polished Si (1 1 1) wafer was used as a substrate and carbon was deposited onto this surface. As a result a curious exit angle dependence which is similar to the evanescent wave of X-rays was found . The calculated transmission coefficient of X-ray evanescent wave is compared with measured exit angle dependence of X-ray emission. The experimental and theoretical values are in good agreement. Utilization of this phenomenon permits to enhance the surface sensitivity of the PIXE analysis method.     

Creation of 3D microsculptures in PMMA by multiple angle proton irradiation

In recent years the technique of proton beam writing has established itself as a versatile method for the creation of microstructures in resist materials. While these structures can be almost arbitrary in two dimensions, the creation of genuine 3D structures remains a challenge.At the LIPSION accelerator facility a new approach has been developed which combines aspects of ion beam tomography, so far solely an analysis method, with proton beam writing. Key element is the targeted irradiation from multiple angles in order to obtain a much broader range of 3D microstructures than has hitherto been possible.PMMA columns with a diameter of ∼90 μm were used as raw material and placed in an upright position on top of a rotational axis. Using 2.25 MeV protons patterns corresponding to the silhouettes of the desired structures were written from two or more directions. In a subsequent step of chemical etching irradiated portions were dissolved, leaving behind the finished 3D sculpture.Various objects have been created. For the demonstration of the method a 70 μm high model of the Eiffel tower has been sculpted by irradiation from two angles. Using irradiation from three angles a 40 μm wide screw with right-handed thread could be crafted which might find applications in micromachining. Also, a cage structure with a pore size of ca. 20 μm was written with the intention to use it as a scaffold for the growth of biological cells.     

Electrical conductivity increase of Al-doped ZnO films induced by high-energy-heavy ions

We have investigated the effects on electrical properties of Al-doped ZnO (AZO) semiconductor films induced by 90 MeV Ni, 100 MeV Xe and 200 MeV Xe ions. The AZO films with c-axis orientation on SiO₂-glass substrate were prepared by using a RF-sputter-deposition method at 400 °C. We find that the conductivity increases by two order of magnitude under high-energy-heavy ion irradiation, as has already been observed for 100 keV Ne ion irradiation. We also find that the efficiency of the conductivity enhancement, which is defined as the conductivity increment per a unit of ion fluence, scales super-linearly with the electronic stopping power (S_e). The carrier density and mobility for unirradiated and irradiated AZO films are presented.     

Effect of annealing on structure and hardness of oxygen-implanted layer on Ti6Al4V by plasma-based ion implantation

Ti6Al4V was treated by oxygen plasma-based ion implantation at the voltage pulses of −30 and −50 kV with a constant fluency of 0.6 × 10¹⁷ O/cm². After implantation, the annealing in vacuum was applied to the implanted samples to control phase structure of the implanted layer. The higher voltage implantation forms nano-size rutile in the implanted layer, but the subsequent annealing at 600 °C induces the resolution of the previous rutile. Although, the lower voltage implantation does not lead to rutile, the annealing can precipitate anatase and rutile in the implanted layer. The higher voltage implantation results in a higher hardness of the implanted layer. The annealing at 500 °C leads to an apparent increase in hardness of the implanted layer, but the annealing at 600 °C induces a rapid decrease in hardness.     

Birefringence in optical fibers formed by proton implantation

Birefringence can be induced in silica-based optical fibers by ion implantation. In the present research, protons were implanted in single-mode optical fibers with two different energies, one being the energy with which the protons can just reach the center of the optical fiber core and the other being a slightly lower energy. The degree of birefringence was evaluated by measuring reflection spectra of Bragg gratings formed at the proton-implanted region of the optical fibers. The results confirmed that birefringence is induced by unidirectional densification along the projected range of protons formed in the fiber core and by densification of the fiber cladding. The induced birefringence reached three to ten times higher than that of a conventional birefringent fiber. The birefringence caused by ion implantation can be a versatile tool for manufacturing various optical fiber devices.     

First direct-write lithography results on the Guelph high resolution proton microprobe

The recently completed high-resolution proton microprobe at the University of Guelph is Canada’s first one-micron nuclear microprobe, which represents the country’s state-of-the-art technology for various nuclear microprobe applications, e.g. direct-write microlithography. Its probe-forming system is comprised of a triplet Oxford Micro beams magnetic quadrupole lenses, along with high-precision objective slits. High energy protons coming off a 3 MV particle accelerator can achieve a nominal resolution of one micro and a beam current of several hundred of picoamperes when arriving at the target. This proton probe is ideal for the use of direct-write lithography with the incorporation of a magnetic scanning system and motorized sample stage.Preliminary lithography results have been obtained using spin-coated PMMA photoresist as specimen. The beam spot size, beam range and straggling inside the substrate and the exposure conditions are investigated by using scanning electron microscopy. This facility is the first in Canada to perform focused direct-write ion beam lithography, which is ideal for modification and machining of polymer and semiconductor materials for biological, microfluidic and ultimate lab-on-chip applications.     

Analysis of lichen thin sections by PIXE and STIM using a proton microprobe

In order to better understand the distribution pattern of mineral elements in lichen tissues, thin sections (15 μm) of the foliose, vagrant soil lichen Xanthoparmelia chlorochroa were examined using proton microprobe Particle induced X-ray emission (PIXE). This technique was used to make two-dimensional scans, with 5 μm resolution, across tissue cross sections of the test species. Element maps for Si, P, S, Cl, K, Ca, Ti, Mn, Fe, Cu, Zn, and As have been prepared. Several elements are strongly localized in the element maps. PIXE data are complimented with STIM, light micrographs, and SEM images. Preliminary data suggest that nuclear microprobe techniques may be useful in elucidating element absorption and transport mechanisms in lichens.     

质子剂量的解析计算

计算了质子束垂直入射于水中的剂量分布,首先给出宽束入射时的剂量深度曲线。然后以－高斯函数描述多重散射作用,得到了三维剂量分布的积分公式。最后给出了入射粒子束为均匀圆柱时剂量分布离轴比的级数表达式。结果表明,给出的部分计算结果与ＰＴＲＡＮ的结果和实验结果符合较好。     

Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10-20 nm were produced by sequential deposition of Si and implantation of 1 keV ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5-1 nm, buried SiC layer being formed. We investigated the effect of thermal annealing on further completion of the carbide layer. For the annealing we used a vacuum furnace, a rapid thermal annealing system in argon atmosphere, and a scanning e-beam, for different temperatures, heating rates, and annealing durations. Annealing to a temperature as low as 600 °C resulted in the formation of a 4.5 nm smooth, amorphous carbide layer in the carbon-implanted region. However, annealing at a higher temperature, 1000 °C, lead to the formation of a rough poly-crystalline carbide layer. The multilayers were characterized by grazing incidence X-ray reflectometry and cross section TEM.     

The effects of the annealing time on helium implantation in Si

The modifications induced in silicon samples by helium implantation before and after isothermal annealing at 673 K have been investigated. The surface morphology has been detected by atomic force microscopy. A hillock structure is observed on the sample surface before and after annealing for 5-10 min. Surface blister formation is observed with an increasing annealing time. The variation of crystal damage with annealing time has been investigated by Rutherford backscattering/channeling. The intensity of the damage peak first increases with annealing time, reaches maximum at an annealing time of 60 min and then decreases. Helium-induced bubbles and residual defects have been observed by transmission electron microscopy, which shows that dislocations are close to the bubbles.     

Enhancement of ZnO thin film transistor performance by high-dose proton irradiation

The object of this study was to improve the performance of ZnO thin film transistors (TFTs) by exposing them to high-dose proton irradiation. A rapid thermal annealing (RTA) process was necessary to improve the interface characteristics between the source-drain electrodes and the channel layer for the high performance of ZnO-TFTs. However, this affected the resistivity of the ZnO channel layer; it was dramatically decreased during the RTA process. As a result, the RTA-treated ZnO-TFTs did not show the proper off-state characteristics. In order to control the electrical properties of the channel layer, we exposed the RTA-treated ZnO-TFTs to 6.1 MeV of proton irradiation beam energy at fluences from 6.7 × 10¹² cm⁻² to 6.5 × 10¹⁴ protons-cm⁻². The resulting resistivity of the ZnO thin film increased after the high-dose proton irradiation. In addition, we studied the structural and electrical properties and the variations in the native defects of ZnO thin films. The field effective mobility of ZnO-TFTs increased from 1.65 to 4.12 cm²/V s after both the RTA and the high-dose proton irradiation. We obtained an enhancement of ZnO-TFT performance using high-dose proton irradiation.