A monolithic analog compandor

Describes a bipolar IC analog dynamic range compandor. The approach taken to implement the compressor and expandor functions is discussed, and the active full wave rectifier and variable gain cell are described in detail. Performance easily exceeds telecommunications requirements and is suitable for use in high quality audio systems. The full wave rectifier has excellent accuracy over a 60-dB dynamic range. The variable gain element offers low distortion (<0.1 percent) attenuation with high signal to noise ratio (90 dB). Ion-implanted resistors have been used for lower temperature sensitivity.     

A monolithic analog exponential converter

The design of a monolithic analog exponential voltage-to-current converter based on the characteristic of bipolar transistors is described. The accurate transfer function (less than 1 percent deviation over 4 decades of current) and the low temperature dependency (less than 1.5/spl times/10/SUP -3/ per K) have been achieved by an accurate balancing and compensation technique.     

A monolithic 200-V CMOS analog switch

A new high-voltage CMOS technology is described which can increase the operating voltage of these circuits to more than 200 V. This represents approximately an order of magnitude improvement over present-day commercially available CMOS devices. The technology is straightforward to implement and uses n-channel MOS transistors and high-voltage p-channel devices. As an example of the capability of the technology, a monolithic quad CMOS analog switch has been fabricated which can handle 200-V, 0.3-A analog signals, with a dynamic range in excess of 150 dB.     

A CMOS field-programmable analog array

The design details and test results of a field-programmable analog array (FPAA) prototype chip in 1.2-μm CMOS are presented. The analog array is based on subthreshold circuit techniques and consists of a collection of a homogeneous configurable analog blocks (CABs) and an interconnection network. Interconnections between CABs and the analog functions to be implemented in each block are defined by a set of configuration bits loaded serially into an onboard shift register by the user. Macromodels are developed for the analog functions in order to simulate various neural network applications on the field-programmable analog array     

A monolithic diode array millimeter-wave beam transmittancecontroller

Amplitude control of transmitted millimeter-wave beams by monolithic Schottky diode arrays is demonstrated. An array containing 4800 diodes has demonstrated control over the range of 20-50% beam transmittance at 99 GHz and 20-70% beam transmittance at 165 GHz. Modulation testing on a second array (8640 diodes) with similar transmission characteristics has shown array control to 50 MHz with negligible loss of output response. An extensive evaluation performed for the 8640-diode array shows good agreement between array impedance parameters determined from quasi-optical measurements, theoretical calculations, and low-frequency C-V measurements. The results have extended the range of quasi-optical functions demonstrated by solid-state power-combining arrays for application to millimeter-wave systems     

揭秘HDTV的"内芯"世界--分量模拟接口AD9883A

AD9883A是专为个人电脑和工作站的RGB图像信号采集而设计的接口芯片,广泛应用于各类高清CRT、平板电视、微显背投和投影仪等系统。     

A monolithic voltage-comparator array for A/D converters

Describes a monolithic circuit consisting of an array of 8 voltage comparators, a resistive voltage divider, and associated logic circuits. Intended as an encoding component for high-speed parallel A/D converters, this `3-bit quantizer' uses regeneration for voltage gain and signal storage. A Gray-code output minimizes the problem of comparator indecision. The principal error sources are an asymmetry-induced comparator offset with 2-mV standard deviation and a thermally induced offset of a much as /spl plusmn/2.5 mV, dependent on signal history. The quantizer has been incorporated in an experimental 6-bit 200 megasample/s (MS/s) A/D converter.     

A fast and unilateral monolithic switch for analog signals

This correspondence deals with a monolithic switch circuit for voltage-type analog signals. The circuit constitutes a unilateral, impedance buffering changeover switch, which is capable of fast signal switching (10 ns changeover time) and can handle wide-spectrum signals (dc-100 MHz). The switch introduces only a small offset (<1 mV) and causes only small (<50 mV), short lasting (<50 ns) switching spikes.     

A monolithic field emitter array with a JFET

This paper proposes a novel structure of the conical Si field emitters monolithically incorporating a vertical-type junction field effect transistor (JFET) and demonstrates the emission control in field emission from the emitters. The proposal has many attractive advantages in the display application and reliable fabrication, because the structure needs neither additional area for the JFET nor additional process except ion implantation. The experimental results of the emitters show excellent controllability and stability in the emission current     

A high-resolution silicon monolithic nozzle array for inkjetprinting

This paper describes a high-resolution monolithic nozzle array for inkjet printing. The nozzles are fabricated using a bulk anisotropic etching technology to undercut a network of highly-boron-doped silicon support ribs, forming an array of microchannels which are then sealed using thermal oxidation and LPCVD dielectrics. Closely-spaced trapezoidal or triangular nozzles are realized after cutting the wafer perpendicular to the microtubes. With a 21-μm nozzle width and a 4-μm nozzle-to-nozzle separation, a resolution of 1016 dots per inch (d/in) can be achieved. Polysilicon heaters are integrated on top of each microchannel so that when activated, the underlying ink is vaporized and a drop of ink is expelled to impinge on the paper. The fabrication of this device requires only five masks and is compatible with the addition of on-chip circuitry for multiplexing the heater control signals. Heat transfer efficiency to the ink is enhanced by the high thermal conductivity of the silicon ribs in the channel ceiling, while the bulk silicon maintains high interchannel isolation. Current pulses 20 μs wide with a power density of 3.35×10⁸ W/m² have been used in initial printing tests, resulting in 20-μm diameter ink dots on a piece of paper which was set 2 mm away from the nozzle. The energy required to fire an ink drop is 11.5 μJ     

New monolithic high-speed analog delay lines

Bucket-brigade circuit implementation with junction or metal-silicon field-effect switching elements provides good low- and high-frequency performance at low clocking voltages with high packing density, simple processing, and good stability.     

Applications of a monolithic analog multiplier

A fully balanced analog multiplier using differential transistor pairs is briefly described. Several circuit functions usually required in communication systems can be derived from the basic circuit. In particular, the different modes of operation leading to FM detection, suppressed carrier modulation, synchronous AM detection, and TV chroma demodulation are discussed. Experimental data obtained with a monolithic analog multiplier are also presented.     

A 16×16 nonvolatile programmable analog vector-matrixmultiplier

In this paper, we present a 16×16 analog vector-matrix multiplier with analog electrically erasable and programmable read-only memories (EEPROMs) used as nonvolatile storage for the weight matrix values. Each weight matrix value is stored in an EEPROM transistor as a change of the threshold voltage, and the same EEPROM transistor is used for the multiplication by utilizing the square-law characteristic of the metal-oxide-semiconductor field-effect transistor. This allows a very simple circuit for the multiplier array with a size of about 1×1 mm². The vector-matrix multiplier has been fabricated in a 1,5-μm single-poly complementary metal-oxide-semiconductor/EEPROM technology and successfully tested     

A complete high-speed voltage output 16-bit monolithic DAC

A new single-chip 16-bit monolithic digital/analog converter (DAC) with on-chip voltage reference and operational amplifiers has achieved /spl plusmn/0.0015% linearity, 10 ppm//spl deg/C gain drift, and 4-/spl mu/s settling time. Novel elements of the 16-bit DAC include: the fast settling open-loop reference with a buried Zener, a fast-settling output operational amplifier without the use of feedforward compensation, and a modified R-2R ladder network. Thermal considerations played a significant role in the design. The DAC is fabricated using a 20-V process to reduce device sizes and therefore die size. All laser trimming including temperature drift compensation is performed at the wafer level. The converter does not require external components for operation.     

A monolithic analog video comb filter in 1.2-μm CMOS

A fully integrated comb filter for luminance/chrominance (Y/C) separation of NTSC video signals is fabricated using a standard 1.2-μm double-poly CMOS technology. This paper demonstrates its use of analog RAM structures in the realization of video line delays. Information is stored and retrieved using switched-capacitor techniques optimized for operation in a parasitic dominated environment. Fixed pattern noise is avoided through the use of serial data paths whenever possible, necessitating the use of a G_m-enhanced amplifier and techniques to improve the feedback factor. The 11.7 mm² adjustment-free circuit, which requires a single clock and reference current, dissipates 170 mW at 5 V and yields an SNR of 51 dB and frequency response flat within 1.1 dB to 4.2 MHz     

A 16-channel CMOS neural stimulating array

A probe designed for the highly selective long-term stimulation of neuronal assemblies in the central nervous system is described. The micromachined multishank probe incorporates CMOS circuitry to control the output current on 16 iridium oxide (IrO) electrode sites. Serial site addresses and current amplitude data are loaded into the probe at 4 MHz and converted to analog stimulus currents. The probe circuitry dissipates only 80 μW from ±5-V supplies when not delivering stimulus currents and uses five external leads. It permits the IrO sites to be activated by voltammetry from off-chip, provides per-channel pulse time-outs to prevent accidental overstimulation of the tissue, and signals the external world, using a status bit, in the event of certain trouble conditions. The stimulating site impedances and the stimulus currents can be measured from off chip on demand. The circuitry is implemented in a single-metal, single-poly, CMOS process with 3-μm minimum features using 7100 transistors in an area of 11 mm²     

A field programmable analog array for CMOS continuous-time OTA-Cfilter applications

A programmable high-frequency operational transconductance amplifier (OTA) is proposed and analyzed. A general configurable analog block (CAB) is presented, which consists of the proposed programmable OTA, programmable capacitor and MOSFET switches. Using the CABs, the universal tunable and field programmable analog array (FPAA) can be constructed, which can realize many signal-processing functions, including filters. A tuning circuit is also discussed. The proposed OTA has been simulated and fabricated in CMOS technology. The results show that the OTA has the transconductance tunable/programmable in a wide range of 700 times and the -3-dB bandwidth larger than 20 MHz. A universal 5×8 CAB array has been fabricated. The chip has also been configured to realize OTA-C 60-kHz and 500-kHz bandpass filters based on ladder simulation and biquad cascade     

A monolithic 1 × 10 array of silicon avalanche photodiodes

A monolithic 1 × 10 array of silicon avalanche photodiodes (Si-APD's) was fabricated. The deviations of breakdown voltages and current gains from mean values in an array were less than ±0.3 and ±2 percent, respectively. The optical interelemental coupling between the adjacent two elements in an array was estimated to be -57 dB.     

A monolithic three-channel LD-PD array with vertically staggeredfacets for autofocusing reflectivity sensors

A monolithic three-channel LD-PD array with vertically staggered facets is proposed for an autofocusing reflectivity sensor which uses light feedback. The focus-sensing characteristics are investigated using an array with a radiation facet displacement of 12 μm and an interchannel distance of 130 μm, fabricated on an 830-nm AlGaAs/GaAs multiple-quantum-well laser substrate with buried-heterostructure stripe geometry waveguides. High focus-sensing accuracy is achieved. A potential application of the array to optical heads for phase change media is discussed