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1.
Bi2O3 was added to a nominal composition of Zn1.8SiO3.8 (ZS) ceramics to decrease their sintering temperature. When the Bi2O3 content was <8.0 mol%, a porous microstructure with Bi4(SiO4)3 and SiO2 second phases was developed in the specimen sintered at 885°C. However, when the Bi2O3 content exceeded 8.0 mol%, a liquid phase, which formed during sintering at temperatures below 900°C, assisted the densification of the ZS ceramics. Good microwave dielectric properties of Q × f =12,600 GHz, ɛr=7.6, and τf=−22 ppm/°C were obtained from the specimen with 8.0 mol% Bi2O3 sintered at 885°C for 2 h.  相似文献   

2.
The cell dimensions of pure triclinic 3CaO·SiO2 and monoclinic 3CaO·SiO2 solid solution (54CaO·16SiO2·Al2O3·MgO) were determined and the powder diffraction patterns were indexed by the method of precise measurement of the spacings. The lattice constants are expressed in terms of triclinic or monoclinic cells corresponding to pseudo-orthorhombic cells derived from Jeffery's trigonal cell. The apparent lattice constants for pure 3CaO·SiO2 are a = 12.195 a.u., b = 7.104 au., c = 25.096 a.u., α= 90°, β= 89°44'γ= 89°44'; for 54CaO·16SiO2.-Al2O3MgO, a = 12.246 a.u., b = 7.045 a.u., c = 24.985 a.u., β= 90°04'. Precise lattice constants of Jeffery's monoclinic lattice for 54CaO.-16SiO2-Al2O3·MgO are derived as a = 33.091 a.u., b = 7.045 a.u., c = 18.546 a.u., β= 94°08'. High-temperature X-ray patterns showed that pure triclinic 3CaO·SiO2 transformed to a monoclinic form at about 920°C. and then to a trigonal form at about 970°C. Monoclinic 54CaO.16SiO2·Al2O3–MgO transformed to trigonal at about 830°C. These transitions were reversible and reproducible and were accompanied by only slight deformation of the structure forms.  相似文献   

3.
Si3N4 compacts, containing ≅7 wt% of both BeSiN2 and SiO2 as densification aids, can be reproducibly sintered to relative densities >99% by a gas-pressure sintering process. Nearly all densification takes place via liquid-phase sintering of transformed β-Si3N4 grains at T =1800° to 2000°C. Compacts with high density are produced by first sintering to the closed-pore stage (≅92% relative density) in 2.1 MPa (20 atm) of N2 pressure at 2000°C and then increasing the N2 pressure to 7.1 MPa (70 atm) where rapid densification proceeds at T = 1800° to 2000°C. The experimental density results are interpreted in terms of theoretical arguments concerning the growth (coalescence) of gas-filled pores and gas solubility effects. Complex chemical reactions apparently occur at high temperatures and are probably responsible for incomplete understanding of some of the experimental data.  相似文献   

4.
Hot pressing kinetics of α-Si3N4, AIN, Al2O3, and Y2O3 powder mixtures forming α'- and β'-SiAlONs have been studied. Densification proceeds in two steps, first by a small shrinkage upon ternary eutectic oxide melting (SiO2–Al2O3–Y2O3) at 1340°C, followed by a massive particle rearrangement and further shrinkage at higher temperature when nitride dissolution begins. With better wettability, AIN initially traps the oxide melt and delays densification. In addition, the preferential dissolution of AIN at 1450°C enriches the melt composition in AI, triggering transient precipitation of supersaturated β'-SiAlON. Full densification is readily achieved at 1550°C without complete α-Si3N4 conversion.  相似文献   

5.
To clarify the influence of impurities on the sintering of SiC powder, three 6H-SiC powder samples—with different levels of SiO2 and aluminum impurities—were sintered with additions of boron and carbon. The densification, grain growth, and transformation of 6H-SiC during sintering were studied qualitatively. The powder that contained the most SiO2 required the greatest amount of boron additive for complete densification. SiO2 apparently reacted with the boron additive and was consumed during sintering. The powder with the greater aluminum impurity level exhibited partial transformation of 6H-SiC to 4H-SiC, and the sintered SiC from this powder had elongated grains. The partial transformation in the SiC crystal accelerated non-equiaxial grain growth.  相似文献   

6.
Sintering and Mechanical Properties of Stoichiometric Mullite   总被引:3,自引:0,他引:3  
Stoichiometric mullite powder (3Al2O3·2SiO2) prepared by spray pyrolysis and sintered at 1650°C attained 95% of theoretical density. The flexural strength was 360 MPa at room temperature and decreased slightly at 1400°C. A fairly high KIc value (2.8 MN/m3/2) was obtained. These mechanical properties can be attributed to the highly homogeneous stoichiometric composition of the raw powder.  相似文献   

7.
The development of microstructure in hot-pressed SiaN4 was studiehd for a typical Si3N4 powder with and without BeSiN2 as a densification aid. The effect of hot-pressing temperature on density, α- to β-Si3N4 conversion and specific surface area showed that BeSiN2 appears to increase the mobility of the system by enhancing densification, α- to β-Si3N4 transformation, and grain growth at temperatures between 1450° and 1800°. These processes appear to occur in the presence of a liquid phase.  相似文献   

8.
A two-step sintering process is described in which the first step suppresses densification while allowing the α-to-β phase transformation to proceed, and the second step, at higher temperatures, promotes densification and grain growth. This process allows one to obtain a bimodal microstructure in Si3N4 without using β-Si3N4 seed crystals. A carbothermal reduction process was used in the first step to modify the densification and transformation rates of the compacts consisting of Si3N4, Y2O3, Al2O3, and a carbon mixture. The carbothermal reduction process reduces the oxygen:nitrogen ratio of the Y-Si-Al-O-N glass that forms, which leads to the precipitation of crystalline oxynitride phases, in particular, the apatite phase. Precipitation of the apatite phase reduces the amount of liquid phase and retards the densification process up to 1750°C; however, the α-to-β phase transformation is not hindered. This results in the distribution of large β-nuclei in a porous fine-grained β-Si3N4 matrix. Above 1750°C, liquid formed by the melting of apatite resulted in a rapid increase in densification rates, and the larger β-nuclei also grew rapidly, which promoted the development of a bimodal microstructure.  相似文献   

9.
Densification Behavior in Microwave-Sintered Silicon Nitride at 28 GHz   总被引:3,自引:0,他引:3  
Si3N4 powders were sintered using a 28 GHz gyrotron source, with Y2O3, Al2O3, and MgO as sintering aids, in an attempt to investigate the effect of microwave radiation on densification behavior. The microwave-sintered samples were compared with identical samples produced by conventional pressureless sintering. The effect of sintering on the microstructural development and grain growth of the samples was assessed using scanning electron microscopy. Phase transformation behavior was assessed using X-ray diffractometry. In the microwave-sintered samples, densification and α→β transformation occurred at temperatures ∼200°C lower than those of the conventionally sintered samples. More importantly, at comparable stages of densification, the microstructures of the microwave-sintered and conventionally sintered samples were significantly different, with the microwave-sintered samples showing the development of elongated β grains at a much earlier stage of the α→β transformation. It was concluded that the effect of microwave radiation on sintering was not simply a decrease in sintering temperatures, but in possibly a different sintering mechanism, clearly related to localized heating within the grain-boundary phase.  相似文献   

10.
α(6 H )- and β(3 C )-SiC powders were sintered with the addition of AlB2 and carbon. α-SiC powder could be densified to ∼98% of the theoretical density over a wide range of temperatures from 1900° to 2150°C and with the additives of 0.67–2.7 mass% of AlB2 and 2.0 mass% of carbon. Sintering of the β-SiC powder required a temperature of >2000°C for densification with these additives. Grains in the α-SiC specimens grew gradually from spherical-shaped to plate-shaped grains at 2000°C; the 6 H polytype transformed mainly to 4 H . On the other hand, grains in the β-SiC largely grew at >2000°C; the 3 C polytype transformed to 4 H , 6 H , and 15 R . The stacking faults introduced in grains were denser in β-SiC than in α-SiC. The rapid grain growth in the β-SiC specimen was attributed to polytype transformation from the unstable 3 C polytype at the sintering temperature.  相似文献   

11.
β-Sialon powder was synthesized by the simultaneous reduction and nitridation of Hadong kaolin at 1350°C in an N2–H2 atmosphere, using graphite as a reducing agent. The average particle size of β-sialon powder was about 4.5 μm. The synthesized β-sialon powder was pressureless sintered from 1450° to 1850°C under a N2 atmosphere. The relative density, modulus of rupture, fracture toughness, and microhardness of β-sialon ceramics sintered at 1800°C for 1 h were 92%, 248 MPa, 2.8 MN/m3/2, and 13.3 GN/m2, respectively. The critical temperature difference (ΔTc) in water-quench thermal-shock behavior was about 375°C for the synthesized β-sialon ceramics.  相似文献   

12.
Phase relations in the binary system between SiO2-P2O5 and SiO2 were investigated by the quenching method using sealed platinum tubes to prevent the loss of P2O5. The compound Si02-P2O5 exists in two forms, the low-temperature β form inverting sluggishly but reversibly to the high-temperature β form at 1030°C. The β form melts congruently at 1290°C. The compound 2SiO2-P2O5 melts incongruently at 1120°C to a silica-rich liquid and SiOa-P2O5. In the region between 5 and 25 mole % PO2, reactions were so sluggish that no data could be obtained by quenching.  相似文献   

13.
The influence of SiO2 addition on the densification and microstructural development of high-purity Si3N4 during hot isostatic pressing (HIP) was studied. During HIP, densification was promoted, but the phase transformation from α -Si3N4 to β -Si3N4 was impeded by SiO2. Analysis using a simple model shows that the enhanced densification was mainly due to the viscous flow of SiO2. The microstructure changed remarkably at between 10 and 20 wt% SiO2 additions. Analysis of the phase transformation kinetics suggests that the diffusion of Si3N4 through SiO2 glass is the ratecontrolling step for the transformation.  相似文献   

14.
Ultrafine (<0.1 μm) high-purity θ-Al2O3 powder containing 3–17.5 mol%α-Al2O3 seeds was used to investigate the kinetics and microstructural evolution of the θ-Al2O3 to α-Al2O3 transformation. The transformation and densification of the powder that occurred in sequence from 960° to 1100°C were characterized by quantitative X-ray diffractometry, dilatometry, mercury intrusion porosimetry, and transmission and scanning electron microscopy. The relative bulk density and the fraction of α phase increased with annealing temperature and holding time, but the crystal size of the α phase remained ∼50 nm in all cases at the transformation stage (≤1020°C). The activation energy and the time exponent of the θ to α transformation were 650 ± 50 kJ/mol and 1.5, respectively. The results implied the transformation occurred at the interface via structure rearrangement caused by the diffusion of oxygen ions in the Al2O3 lattice. A completely transformed α matrix of uniform porosity was the result of appropriate annealing processes (1020°C for 10 h) that considerably enhanced densification and reduced grain growth in the sintering stage. The Al2O3 sample sintered at 1490°C for 1 h had a density of 99.4% of the theoretical density and average grain size of 1.67 μm.  相似文献   

15.
β'-Sialon has the general formula Si6-ZAlZOZN8-Z The synthesis of pure β'-sialon with three different Z values of 0.5, 1.0, and 2.0 in the system Si3N4-AlN-Al2O3-SiO2 has been reported without the addition of a foreign sintering aid. A small shift in the composition toward the SiO2 corner has been made in each case. The Z=1.0 and 2.0 sialon can be sintered almost to full density while that with Z=0.5 sialon is difficult even with a higher amount of excess oxide addition. A packing bed of Si3N4 and SiO2 in a weight ratio of 7:3 was found to be most useful. The coefficient of linear thermal expansion of Z=1.0 sialon is 2.2°10-6/°C (25° to 1000°C). The room-temperature modulus of rupture value can be retained up to 90% of the value at 1400°C. A similar trend has also been observed in the KlC value with temperature. The steady-state flexural creep rate varies from 0.5°10-6 to 2.5°10-6 h-1 in the temperature and load ranges of 1200° to 1300°C and 100 to 250 MPa.  相似文献   

16.
Flame spray pyrolysis of a polymeric precursor is used to prepare ultrafine powders that, when sintered, convert to essentially pure phase lithium-doped sodium β"-alumina. The precursor Na1.67 Al10.67 Li0.33 [N(CH2CH2O)3]10.67-[OCH2CH2O]·x(HOCH2CH2OH) has been synthesized from stoichiometric amounts of metal hydroxides and tri-ethanolamine (N(CH2CH2OH)3, TEA) in excess ethylene glycol. The precursor is dissolved in ethanol, and an atom-ized spray of the solution is combusted in a specially con-structed flame spray apparatus. Combustion occurs at ∼2000°C, followed by immediate quenching. This proce-dure provides for a measure of kinetic control over the process. The resulting nanopowder particles are 50–150 nm in diameter and exhibit powder X-ray diffractometry pat-terns similar to β"-alumina. Heating the nanopowder at 30°C/min to 1200°C with a 1 hisotherm converts it to pure β"-alumina. In preliminary sintering studies, green powder compacts (∼65% theoretical density) sintered at 1600°C for 12 min densify to 3.0 ± 0.1 g/cm 3 (∼92% theoretical density) with minimal loss of Na2O. This procedure offers several processing and cost advantages over conventional β"-alumina syntheses.  相似文献   

17.
A fine, uniform A12O3-SiO2 powder was prepared by heterocoagulation of narrow Al2O3 and SiO2 powders. This composite powder was dispersed, compacted, and fired in air at 900° to 1580°C for 1 to 13 h. Full density was achieved at 1550°C with the formation of a mullite phase. Relative densities of 83% and 98% (0.3 μm grain size) were measured for samples sintered at 1200°C for 13 h and at 1400°C for 1 h, respectively.  相似文献   

18.
A 2.45 GHz microwave-sintered Si3N4–Y2O3–MgO system containing various amounts of ZrO2 secondary additives have been studied with respect to phase transformation and densification behavior. The temperature dependent dielectric properties were measured from 25°C to 1400°C using a conventional cavity perturbation technique. Phase transformation behavior was studied using X-ray diffractometry. Microwave sintered results were compared with those of conventional sintered results. It has been found that α to β phase transformation was completed at a lower temperature in microwave-sintered samples than those of the conventionally sintered samples. Density of the microwave-sintered samples increased up to 2.5 wt% of ZrO2 addition and thereafter it showed a tendency to decrease or remain constant. The decrease in density is attributed to the pore generation caused by decomposition due to the localized over heating.  相似文献   

19.
A hydrothermally CaO–SiO2–H2O system was investigated at 150°–200°C, 2.5 h (CaO:SiO2=0.95) using various modifications of SiO2 in the presence of a mineralizer. Synthetic (stabilized) γ-tridymite is the most reactive among SiO2 modifications. In the reaction mixture, the optimal concentration of the mineralizer (KOH) is 2% (versus the solid phase). The binding degree of CaO with SiO2 practically is 100% at 150°C. It is impossible to synthesize CSH free of C2SH on the basis of β-cristobalite and β-quartz under the investigation conditions without the use of mineralizer. The calorimetric effects as well as heat of de-hydration of hydrosilicates were determined during their transformation into wollastonite. The entropy change at the peaks has been calculated.  相似文献   

20.
Electrical conductivity was measured from 850° to 1400°C for β-sialon and pure X phase as well as for the sintered system Si3N4-Al2O3, containing β-sialon, X phase, β-Si3N4, and glassy phase. Ionic conductivity was measured at >1000°C. The charge carriers were identified by electrolysis. The results showed that pure β-sialon is ionically conducting because of Si4+ migration for the temperature range studied. Pure X phase shows ionic conduction by Si4+ above 1000°; below 1000°C, it shows electronic conduction because of impurities. The conductivity of the sintered system Si3N4-Al2O3 containing β-sialon, β-Si3N4 X phase, and glassy phase changes as the relative quantities of β -sialon and X phase change. The apparent activation energies for the ionic and electronic conductivities are 45 and 20 kcal/mol, respectively.  相似文献   

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