共查询到19条相似文献,搜索用时 93 毫秒
1.
《红外与毫米波学报》2016,(4)
采用分子束外延方法在GaAs和GaSb衬底上生长了一系列InAsSb薄膜,研究了Sb组分与Sb4束流间关系.实验发现,在分子束外延生长中,相比As原子,Sb原子更易并入晶格中.利用该特性可较好实现InAsSb材料的组分控制. 相似文献
2.
原子氢辅助分子束外延生长以GaAs材料性能的改善 总被引:1,自引:0,他引:1
利用深能级瞬态谱(DLTS)研究了常规分子束外延和原子氢辅助分不外延生长的掺杂Si和Be的GaAs同质结构样品中缺陷的电这特性。发现原以辅助分子束外延生长的样品中缺陷的浓度与常规分子束外延生长的样品相比有明显的降低,这可解释为生长过程中原子对缺陷的原位中和与钝化作用。 相似文献
3.
用熔体外延(ME)法在InAs衬底上生长了InAsSb外延层,用扫描电子显微镜(SEM)观察了样品的横截面,并测量出外延层的厚度达到100μm,用X-射线衍射(XRD)谱研究了InAsSb外延层的结构性质。测量结果表明,InAs/InAs0.023Sb0.977单晶具有相当完美的晶体取向结构及良好的结晶质量,这可能得益于100μm的外延层厚度基本消除了外延层与衬底之间晶格失配的影响。电子探针微分析(EPMA)测量的元素分布图像显示,Sb(锑)元素在外延层中的分布相当均匀。 相似文献
4.
5.
《红外与毫米波学报》2021,(5)
利用分子束外延技术在Ga Sb衬底上生长了高质量的InAs/InAsSb(无Ga)Ⅱ类超晶格。超晶格的结构由100个周期组成,每个周期分别是3.8 nm厚的In As层和1.4 nm厚的InAs_(0.66)Sb_(0.34)层。在实验过程中出现了一种特殊的尖峰状缺陷。利用高分辨率x射线衍射(HRXRD)、原子力显微镜(AFM)和傅里叶变换红外光谱(FTIR)对外延的超晶格进行了表征和分析。结果表明,优化后的样品几乎为零晶格失配,超晶格0级峰半峰宽为39.3 arcsec,表面均方根粗糙度在10μm×10μm范围内达到1.72?。红外吸收光谱显示50%的截止波长为4.28μm,PL谱显示InAs/InAs_(0.66)Sb_(0.34)超晶格4.58μm处有清晰锐利的发光峰。这些结果表明,外延生长的InAs/InAsSb超晶格稳定性和重复性良好,值得进一步的研究。 相似文献
6.
评述长波红外焦平面阵列技术的进展,介绍一种适合于发展长波红外焦平面阵列的新材料—InAsSb 应变层超晶格及其生长技术、发展背景、目前现状,生长这种材料用的分子束外延和有机金属化学汽相淀积工艺及其这种材料的发展前景。 相似文献
7.
8.
9.
全固源分子束外延生长InP和InGaAsP 总被引:1,自引:0,他引:1
在国产分子束外延设备的基础上,利用新型三温区阀控裂解源炉,对InP及InGaAsP材料的全固源分子束外延(SSMBE)生长进行了研究.生长了高质量的InP外延层,表面缺陷密度为65cm-2,非故意掺杂电子浓度约为1×1016cm-3.InP外延层的表面形貌、生长速率及p型掺杂特性与生长温度密切相关.研究了InGaAsP外延材料的组分特性,发现在一定温度范围内生长温度对Ⅲ族原子的吸附系数有较大影响.最后得到了晶格匹配的In0.56Ga0.4As0.04P06材料,低温光致发光谱峰位于1507 nm,FWHM为9.8 meV. 相似文献
10.
11.
D.Benyahia L.Kubiszyn K.Michalczewski A.Kbowski P.Martyniuk J.Piotrowski A.Rogalski 《半导体学报》2018,39(3):14-18
Undoped and Be-doped InAs1-xSbx (0 ≤ x ≤ 0.71) epitaxial layers were successfully grown on lattice mismatched semi-insulating GaAs (001) substrate with 2° offcut towards 〈 110〉.The effect of the InAs buffer layer on the quality of the grown layers was investigated.Moreover,the influence of Sb/In flux ratio on the Sb fraction was examined.Furthermore,we have studied the defects distribution along the depth of the InAsSb epilayers.In addition,the p-type doping of the grown layers was explored.The InAsSb layers were assessed by X-ray diffraction,Nomarski microscopy,high resolution optical microscopy and Hall effect measurement.The InAs buffer layer was found to be beneficial for the growth of high quality InAsSb layers.The X-ray analysis revealed a full width at half maximum (FWHM) of 571 arcsec for InAs0.87Sb0.13.It is worth noting here that the Hall concentration (mobility) as low (high) as 5 × 1016 cm-3 (25000 cm2V-1s-1) at room temperature,has been acquired. 相似文献
12.
13.
M. P. Mikhailova I. A. Andreev E. V. Ivanov G. G. Konovalov E. A. Grebentshikova Yu. P. Yakovlev E. Hulicius A. Hospodkova Y. Pangrac 《Semiconductors》2013,47(8):1041-1045
The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superlinear luminescence and increased optical power as a function of the pump current in the photon energy range of 0.6–0.8 eV are observed at temperatures of T = 77 and 300 K. The photoelectric, current-voltage, and capacitance characteristics of these heterostructures are studied in detail. The photosensitivity is examined with photodetectors operating in the photovoltaic mode in the spectral range of 0.9–2.0 μm. The sensitivity maximum at room temperature is observed at a wavelength of 1.55 μm. The quantum efficiency, detectivity, and response time of the photodetectors were estimated. The quantum efficiency and detectivity at the peak of the photosensitivity spectrum are as high as η = 0.6–0.7 and D λmax * = (5–7) × 1010 cm Hz1/2 W?1, respectively. The photodiode response time determined as the rise time of the photoresponse pulse from 0.1 to the level 0.9 is 100–200 ps. The photodiode transmission bandwidth is 2–3 GHz. Photodetectors with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates are promising foruse in heterodyne detection systems and in information technologies. 相似文献
14.
A. N. Semenov O. G. Lyublinskaya V. A. Solov’ev B. Ya. Mel’tser S. V. Ivanov 《Semiconductors》2008,42(1):74-79
Formation of InSb quantum dots grown in an InAs matrix by molecular-beam epitaxy that does not involve forced deposition of InSb is studied. Detection of intensity oscillations in the reflection of high-energy electron diffraction patterns was used to study in situ the kinetics of the formation of InSb quantum dots and an InAsSb wetting layer. The effects of the substrate temperature, the shutter operation sequence, and the introduction of growth interruptions on the properties of the array of InSb quantum dots are examined. Introduction of a growth interruption immediately after completing the exposure of the InAs surface to the antimony flux leads to a reduction in the nominal thickness of InSb and to an enhancement in the uniformity of the quantum-dot array. It is shown that, in the case of deposition of submonolayer-thickness InSb/InAs quantum dots, the segregation layer of InAsSb plays the role of the wetting layer. The Sb segregation length and segregation ratio, as well as their temperature dependences, are determined. 相似文献
15.
A novel superlattice (SL) heterostructure, comprising of InTlSb well and InAsSb barrier lattice matched to InSb, is proposed
for long wavelength 8−12 urn detectors. Improvements in the InTlSb epilayers’ structural quality are expected, as it will
be sandwiched between higher quality zinc-blende InAsSb epilayers. Preliminary energy band calculations of 30? InAs0.07Sb0.93/100? In0.93Tl0.07Sb SL show the band alignment favorable to type I with three heavy-hole subband confinement in the valence band and a partial
electron subband confinement in the conduction band due to the small conduction band offset. Including the effect of strain
indicates significant changes in the band offsets, with optical bandgap essentially unaltered. The optical band gap of this
SL was computed to be 0.127 eV (9.7 μm) at OK, indicating its potential for long wavelength applications. 相似文献
16.
Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K
K. D. Mynbaev N. L. Bazhenov A. A. Semakova M. P. Mikhailova N. D. Stoyanov S. S. Kizhaev S. S. Molchanov A. P. Astakhova A. V. Chernyaev H. Lipsanen V. E. Bougrov 《Semiconductors》2017,51(2):239-244
The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2–300 K. At low temperatures (T = 4.2–100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 μm. The emission becomes spontaneous at T > 70 K due to the resonant “switch-on” of the CHHS Auger recombination process in which the energy of a recombining electron–hole pair is transferred to a hole, with hole transition to the spin–orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers. 相似文献
17.
工作在中、长波红外波段(波长5~12μm)的红外探测器在红外制导、红外成像、环境监测及资源探测等方面有着重要而广阔的应用前景。目前中国军用和民用对这一波段的非制冷型、快速响应的光子型红外探测器有迫切需求。文中用熔体外延(ME)法在InAs(砷化铟)衬底上生长的InAs0.05Sb0.95(铟砷锑)厚膜单晶,制作了高灵敏度、非制冷型、中长波光导型探测器,探测器上安装了Ge(锗)浸没透镜。傅里叶变换红外(FTIR)吸收光谱显示InAsSb材料的本征吸收边出现在波长8μm以后。InAs0.05Sb0.95探测器的光谱响应波长范围为2~9μm。室温下,在波长6.5μm处的峰值探测率Dλp*达到5.4×109 cm·Hz1/2·W-1,在波长8.0μm和9.0μm处的探测率D*分别为9.3×108和1.3×108 cm·Hz1/2·W-1,显示了InAsSb探测器的优越性能及对红外探测和成像的应用前景。 相似文献
18.
H. Shao W. Li A. Torfi D. Moscicka W.I. Wang 《Photonics Technology Letters, IEEE》2006,18(16):1756-1758
Novel noncryogenic InAsSb photovoltaic detectors grown by molecular beam epitaxy are proposed and demonstrated. The quaternary alloy In/sub 0.88/Al/sub 0.12/As/sub 0.80/Sb/sub 0.20/ is introduced as a wide bandgap barrier layer lattice matched to the GaSb substrate. The valence band edge of In/sub 0.88/Al/sub 0.12/As/sub 0.80/Sb/sub 0.20/ nearly matches with InAs/sub 0.91/Sb/sub 0.09/, leading to more efficient transport of photogenerated holes. The resulting mid-infrared photovoltaic detector exhibits a 50% cutoff wavelength of 4.31 /spl mu/m and a peak responsivity of 0.84 A/W at room temperature. High Johnson-noise-limited detectivity (D/sup */) of 2.6/spl times/10/sup 9/ cm/spl middot/Hz/sup 1/2//W at 4.0 /spl mu/m, and 4.2/spl times/10/sup 10/ cm/spl middot/Hz/sup 1/2//W at 3.7 /spl mu/m are achieved at 300 K and 230 K, respectively. 相似文献
19.
工作在中长波的红外探测器可被广泛应用在空间成像、军事和通信等领域,锑基InAsSb材料由于其特殊的性质是制作长波非致冷光子探测器的理想材料。俄歇复合寿命是影响探测器性能的重要因素之一,文章采用Matlab软件模拟研究了n型和p型InAsxSb1-x材料的俄歇复合寿命随温度、As组分及载流子浓度的变化。对确定的As组分,可通过优化工作温度及载流子浓度获得较长的俄歇复合寿命。当载流子浓度为3.2×1015 cm-3、温度为200K时,n型InAs0.35Sb0.65的俄歇复合寿命最大为2.91×10-9 s。 相似文献