基于SOI的16通道200GHz阵列波导光栅

设计并制作了基于绝缘体上硅(SOI)材料的1×16阵列波导光栅(AWG).该AWG器件的中心波长为1 550 nm,信道间隔为200 GHz,采用了脊型波导结构.首先确定了波导的结构尺寸以保证单模传输,并利用束传播法(BPM)模拟了波导间隔、弯曲半径和锥形波导长度等参数对器件性能的影响,对器件结构进行了优化,同时也利用BPM方法模拟了器件的传输谱.模拟结果显示:器件的最小信道损耗为4.64 dB,串扰小于-30 dB.根据优化的器件结构,通过光刻等半导体工艺制作了AWG,经测试得到AWG器件的损耗为4.52～8.1 dB,串扰为17～20 dB,能够实现良好的波分复用/解复用功能.     

基于SOI的16通道VMUX器件单片集成

本文制作了基于绝缘体上硅(SOI)材料的16通道的光功率可调波分复用器(VMUX),并且采用了脊形波导结构。该器件是由信道间隔100GHz的阵列波导光栅(AWG)及电光型可调光衰减器(VOA)组成,该VOA采用了侧向p-i-n二极管结构。该VMUX器件的插入损耗为9.1dB,串扰为10dB。VOA在衰减量为20dB时的注入电流为60.74mA。器件的整体尺寸为2.9×1mm2。该VMUX器件具备优异的16通道波分复用及光功率均衡的性能。     

基于3 μm-SOI的波分复用/解复用器与电吸收型VOA的单片集成

波分复用/解复用器与可调光衰减器的是光通信系统中的重要元器件。为了得到制备工艺简单、响应速度快的二者的单片集成芯片,并且考虑到其与其他不同光器件的集成可能性,在绝缘体上硅材料制作了16通道、信道间隔200 GHz的阵列波导光栅复用/解复用器与电吸收型可调光衰减器的单片集成。该器件的片上损耗小于7 dB,串扰小于-22 dB。电吸收型VOA在20 dB的衰减量下的功耗为572 mW （106 mA,5.4 V）。此外,该器件可以实现光功率的快速衰减,在0~5 V的外加方波电压下,VOA上升及下降时间分别为50.5 ns和48 ns。     

光子晶体电光调制和粗波分复用集成器件研究

提出了一种用于电光调制和粗波分复用的片上集成器件。该集成器件的电光调制器模块和粗波分复用器模块都是由硅基光子晶体波导和L3型谐振腔组成,两个模块间采用硅基光子晶体波导连接。该器件根据等离子体色散效应,采用L3型谐振腔和PN结实现了对波长的调制;根据微腔与波导的直接耦合理论,采用L3型谐振腔结构实现了滤波。利用基于三维时域有限差分法(3D-FDTD)的Lumerical软件对其进行仿真分析,结果表明该集成器件在工作波长1530 nm和1550 nm下均可以先完成各自的电光调制再进行双通道波长的复用。该器件在工作波长1530 nm和1550 nm下的插入损耗分别为0.70 dB和0.95 dB,消光比分别为20.97 dB和22.05 dB,调制深度均为0.99,信道串扰分别为-29.05 dB和-27.59 dB,器件尺寸仅为17.83μm×17.3μm×0.22μm。该集成器件结构紧凑,易于集成,可应用于高速大容量波分复用光通信系统。     

一种集成环行器的X波段三维异构集成T/R模组

微电子机械系统(MEMS)环行器被广泛应用于射频(RF)T/R微系统中，解决共用天线且收发隔离的问题。基于硅基三维(3D)异构集成工艺，设计了一种集成MEMS环行器的X波段T/R模组。该模组以高阻硅为介质基板，在硅基板上、下表面电镀金属图形，并堆叠多层硅基晶圆，在硅基模组上封装了集成无源器件(IPD)环行器，完成了多种微波芯片和MEMS环行器的系统级封装(SiP),将环行器紧凑集成在硅基T/R模组中。模组尺寸为12.0 mm×11.3 mm×2.0 mm。测试结果表明，在8～12 GHz频带内，模组接收通道增益为27 dB,接收通道噪声系数小于3.2 dB;发射通道增益为33 dB,饱和输出功率大于2 W。     

基于Interleave和微谐振环的32信道波分复用器特性

对结合interleave滤波器的1×32信道垂直耦合双环谐振波分复用器件的传输特性进行了研究,得到了器件的光学传递函数公式,对器件的参数、光谱响应、分波光谱、插入损耗以及信道间的串扰进行了数值模拟和优化.分析结果表明,通过在微环谐振波分复用器件的前端增加interleave滤波器,使信道间的串扰降低了14 dB,并且改善了器件的输出光谱形状,提高了器件的信道复用密度;同时,由于采用了在同一基片上集成,保证了器件的低插入损耗.通过参数优化,得到了中心波长为1 550 nm、波长间隔为0.4 nm、3 dB带宽为0.21 nm、插入损耗低于1.1 dB和串扰低于-32 dB的32信道密集波分复用器(DWDM).     

基于硅基MEMS工艺的Ka波段四通道短砖式三维集成T/R微系统

基于硅基微电子机械系统(MEMS)工艺设计了一种Ka波段四通道短砖式三维集成T/R微系统，实现四通道收发及功率合成功能。器件每个通道具备6 bit数控移相、5 bit数控衰减、电源调制等功能。该T/R微系统由两层硅基MEMS模块堆叠而成，每层硅基模块内部异构集成多个单片微波集成电路(MMIC),内部采用硅通孔(TSV)实现垂直互连，层间采用植球互连，器件尺寸为18 mm×19.5 mm×3 mm。经测试，在33～37 GHz频段内，器件单通道饱和发射功率大于30 dBm,接收增益约为35 dB,噪声系数小于4.6 dB。器件兼顾高性能和高集成度，可应用于雷达相控阵系统。     

基于GaN HEMT工艺的高功率宽带6 bit数字移相器

基于GaN HEMT工艺研制了一款8～12.5 GHz宽带6 bit数字移相器.通过采用优化的宽带拓扑和集总元件,以及在片上集成GaN并行驱动器,提高了移相精度,缩小了芯片的尺寸,减少了控制端数量.测试结果表明,在8～12.5 GHz频带内,全部64个移相状态下,插入损耗小于11 dB,输入回波损耗小于-14 dB,输出回波损耗小于-16 dB,移相均方根误差小于1.8°,幅度变化均方根误差小于0.5 dB.在8 GHz频率下,1 dB压缩点输入功率高达33 dBm.芯片尺寸为5.05 mm×2.00 mm×0.08 mm.     

基于混合集成的高增益光接收模块北大核心

针对光载无线通信(RoF)系统对高增益、小型化光接收模块(ROSA)的需求,基于混合集成技术,设计并制作了一种高增益的四通道ROSA器件,尺寸为20.0 mm×14.0 mm×5.9 mm。模块内集成了低噪声放大器(LNA)芯片以提高射频信号增益,建立了射频信号传输电路,并对器件特性进行了仿真分析。经测试,器件的射频信号增益达14 dB,-3 dB带宽为23 GHz,在1550 nm波长的入射光下,器件的响应度为0.81 A/W,相邻信道之间的射频信号串扰小于-40 dB。该模块对于减小RoF系统的体积和功耗具有重要意义。     

四信道波分复用器／解复用器

GigabitOptics公司研制的MicroMux型疏集波分复用器 /解复用器 ( 9mm× 9.2mm× 6mm)适用于光通信网络子系统中的线卡集成。该装置能组合或分离 4个信道的传输信号 ,适用于城域核心网、城域接入网和企业疏集波分复用系统 ;多波长 30 0针脉冲转发机、GBIC和Xenpak无线电收发机。该装置符合国际电信联盟ITU G694 2规定。主要性能为 :标准信道间隔 2 0nm、波长范围 1 45 0～ 1 630nm、插损≤ 2dB、回程损耗≥ 45dB、偏振依赖损耗≤ 0 .1 5dB。 (No .1 6)四信道波分复用器/解复用器…     

小孔耦合型双通道太赫兹波导定向耦合器设计

提出了一种小孔耦合型双通道太赫兹波导定向耦合器,采用新颖的阶梯结构,将两个单通道耦合器结合,可在双通道内实现相同的耦合输出。研究结果表明,在180~260 GHz的频率范围内,该耦合器的耦合度为10 dB,输出最大误差小于1.6 dB,回波损耗大于25 dB,隔离度大于35 dB,相对带宽达到36%。与传统的太赫兹波导定向耦合器相比,该耦合器能够实现双通道的耦合输出,在太赫兹系统中可用于双通道的功率检测、功率合成与分配。     

Investigation of Transients in Single-Fiber Bidirectional Closed-Loop WDM Ring Network Using High-Power Gain Clamped EDWA

We investigate a transparent WDM ring network design immune to accumulated power transients where simultaneous bidirectional operation is achieved on a single fiber. This allows cost effectiveness, flexible traffic re-routing, and network operation. We demonstrate that add/drop of 15 out of 16 channels generate negligible $({≪ 0.15}~{hbox {dB}})$ power excursion on the surviving channel. These results have been obtained by using new high-gain erbium-doped waveguide amplifiers in an innovative gain-clamped configuration that allows bidirectional operation. The glass-on-silicon waveguide optical amplifiers are able to achieve a clamped flat gain of 15 dB on full C-band with up to 0-dBm input power. This is the highest output power ever reported for an erbium-doped waveguide amplifier. The amplifier can with almost identical performance operate with signals entering together from both ends or even from opposite ends. The gain properties of the amplifier are almost perfectly symmetric.      

High-density and alignment-tolerant integration of monitoringphotodetector arrays onto polymeric guided-wave components

We report on a hybrid integration concept which allows high-density and alignment-tolerant surface mount assembly of top-illuminated photodetector (PD) arrays onto polymeric guided-wave components by means of a micromachined submount with an integrated mirror. This research aims at the development of polymeric waveguide based devices with an embedded optical power monitoring capability for applications in optical fiber communication networks. A prototype integrated multichannel optical power monitor comprising an eight-channel PD module and a polymeric waveguide splitter array was demonstrated which exhibited an average insertion loss of 5.2 dB, a PD coupling efficiency of -2.6 dB, and a crosstalk value of -17.1 dB between adjacent channels. Low polarization and wavelength sensitivity (σ<0.1 dB) was confirmed over a spectral range of 40 nm in both telecom wavelength windows     

24-Channel Ku-Band Low-Loss Slotted Waveguide Power Divider

A 24-channel Ku-band power divider for active phased antenna array has been proposed and developed. The divider is built using a tree network with 1×3×2×2×2 structure, while all its elements are implemented using a finline. As a result, additional insertion loss of the manufactured specimen amounted to 1.8 dB that corresponds to the efficiency of about 66%. The measured isolation of the divider outputs amounted to no less than 16 dB for any pair of channels with the irregularity of power division between channels of no more than 0.3 dB in the working frequency range of 9–14 GHz.     

C波段E面扇形波导等功率合成器的设计北大核心CSCD

设计了一种16路等功率分配功率合成器。该功率合成器采用径向功率合成的方式,基于E面扇形波导原理进行设计。最终设计的功率合成器总体尺寸为480.1 mm×457.7 mm×60.3 mm。仿真和测试结果显示,该功率合成器工作频段为5.2~5.9 GHz,各路带内插入损耗≤0.5 dB,相位平衡度≤3°。该合成器在空气击穿阈值的条件下,可以承受最大输入峰值功率8000 W,满足大功率合成需要,可用于C波段固态发射机的相关应用中。     

Reconfigurable 16-channel WDM drop module using silicon MEMSoptical switches

A reconfigurable 16-channel 100-GHz spacing wavelength-division-multiplexed drop module for use at 1550 nm was demonstrated using silicon microelectromechanical system (MEMS) optical switches and arrayed waveguide grating routers. Through-channel extinction was greater than 40 dB and average insertion loss was 21 dB, Both drop-and-retransmit of multiple channels (11-18 dB contrast, 14-19-dB insertion loss) and drop-and-detect of single channels (>20-dB adjacent channel rejection, 10-14-dB insertion loss) were implemented     

Polymer-Based Long-Range Surface Plasmon Polariton Waveguides for 10-Gbps Optical Signal Transmission Applications

We present characteristics of very thin Au strip waveguides based on long-range surface plasmon polaritons (LR-SPPs) along thin Au strips embedded in polymers. We also report a 10 Gbps optical signal transmission via LR-SPPs with the pig-tailed Au strip waveguide at a telecommunication wavelength of 1.55 mum. We limited the thickness, width, and length up to ~20 nm, ~ 10 mum, and ~5 cm, respectively, for practical applications. At 1.55 mum, loss properties of the Au strip waveguides were theoretically and experimentally evaluated with thickness, width and cladding material. The lowest propagation loss of ~1.4 dB/cm was experimentally obtained with the 14-nm-thick and 2-mum-wide Au strip. With a single-mode fiber, the lowest coupling loss of less than 0.1 dB/facet was achieved with the 14-nm-thick and 7.5-mum-wide Au strip. The lowest insertion loss was obtained 7.7 dB with the 14-nm-thick, 5-mum-wide, and 1.5-cm-long Au strip. The propagation loss was improved approximately 30% for the 17-nm-thick Au strip with lowering the refractive index of the cladding polymer by 0.01. In the 10 Gbps optical signal transmission experiment, the LR-SPP waveguide exhibits an excellent eye opening and a 2.2 dB power penalty at 10^-12 bit error rate. These all results indicate that the LR-SPP waveguide is a potential transmission line for optical interconnects to overcome inherent problems in electric interconnects.     

Variable optical attenuator for large-scale integration

A polymer thermooptic variable optical attenuator (VOA) was designed and demonstrated for dense waveguide device integration. The waveguide bend design is compatible with photolithography fabrication techniques and operates by controlling waveguide bend radiation loss. The design optimizes the compromise between integration capability, integration cost, and attenuation efficiency. For a 5 mm bend length, optical attenuation of >40 dB has been achieved with an applied electrical power of 250 mW. The fiber-to-fiber insertion loss was 1.5 dB for a 20-mm total waveguide length. The design's compact size makes it practical for both VOA arrays and dense integrated optical circuits     

Design and Analysis of Refractometer Based on Bend Waveguide Structure with Air Trench for Optical Sensor Applications

This study proposes a novel optical sensor structure based on a refractometer combining a bend waveguide with an air trench. The optical sensor is a splitter structure with a reference channel and a sensing channel. The reference channel has a straight waveguide. The sensing channel consists of a U‐bend waveguide connecting four C‐bends, and a trench structure to partially expose the core layer. The U‐bend waveguide consists of one C‐bend with the maximum optical loss and three C‐bends with minimum losses. A trench provides a quantitative measurement environment and is aligned with the sidewall of the C‐bend having the maximum loss. The intensity of the output power depends on the change in the refractive index of the measured material. The insertion loss of the proposed optical sensor changes from 3.7 dB to 59.1 dB when the refractive index changes from 1.3852 to 1.4452.