共查询到20条相似文献,搜索用时 78 毫秒
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激光电化学刻蚀是将激光加工技术和电化学加工技术有机结合起来而形成的一种复合型刻蚀工艺.为了研究电.解兰对激光电化学刎蚀硅的影响,本文采用248nm KrF准分子激光作为光源聚焦照射浸在KOH溶液中的阳极半导体n-Si上实现激光诱导电化学刻蚀.在实验的基础上,研究了经学溶液对激光电化学蚀Si的雇刻蚀速率的影响,并对其产生的原因进行了分析.试验结果表明:化学溶液对刻蚀工艺的影响主要采辣于小同浓度的溶液对激光的吸收和折射;采用吸收率较小、浓度较低的溶液和控制液膜厚度能有效减小溶液飞溅和溶液折射.本文中,溶液的厚度控制在1mm左右. 相似文献
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赵水林 《电子工业专用设备》2004,33(6):63-66
对氮化硅阻挡层或ARC层的去除通常使用在高温磷酸溶液中选择性氮化硅刻蚀。简要地阐述氮化硅刻蚀的工艺特性,及对氮化硅刻蚀后氧化硅厚度的控制提出一点见解。 相似文献
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用水平集方法建立了碲镉汞的离子束刻蚀轮廓的数值模型,模型的输入参数包括掩膜厚度、掩膜侧壁倾角、掩膜沟槽宽度、离子束散角、刻蚀速度等参数.对碲镉汞的刻蚀轮廓和刻蚀速度减缓现象进行了模拟和实验验证,结果表明,在沟槽宽度为4~10μm的范围内,计算得到的刻蚀深度和SEM测量结果相差6~20%.对掩膜的轮廓演变进行了模拟,给出了一个优化设计掩膜厚度来提高深宽比的实例. 相似文献
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Pyrex玻璃的湿法刻蚀研究 总被引:2,自引:0,他引:2
对Pyrex 7740玻璃的湿法刻蚀工艺进行了研究。实验中采用了几种不同的材料(光刻胶、Cr/Au、TiW/Au)作为刻蚀玻璃的掩膜,通过实验发现TiW/Au掩膜相对目前比较常用的Cr/Au掩膜有很多优点,如减少了玻璃的横向腐蚀,增加了深宽比,刻蚀图形边缘更加平滑等。还研究了腐蚀液成分配比对刻蚀结果的影响,发现刻蚀速率随HF浓度的增加而增加,且在HF浓度一定时,加入少量HNO3可以明显提高刻蚀速率。本文的实验结果对一些MEMS器件特别是微流体器件的制作有一定参考作用。 相似文献
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Beta phase Gallium trioxide (β-Ga2O3) thin film was grown by metal organic chemical vapor deposition technology. Mixture gases of SF6 and Ar were used for dry etching of β-Ga2O3 thin film by inductively coupled plasma (ICP). The effect of SF6/Ar (etching gas) ratio on etch rate and film etching damage was studied. The etching rate and surface roughness were measured using F20-UN thin film analyzer and atomic force microscopy showing that the etching rate in the range between 30 nm/min and 35 nm/min with an improved surface roughness was obtained when the reactive mixed gas of SF6/Ar was used. The analysis of X-ray diffraction and transmission spectra further confirmed the non-destructive crystal quality. This work demonstrates that the properly proportioned mixture gases of SF6/Ar is suitable for the dry etching of β-Ga2O3 thin film by ICP and can serve as a guide for future β-Ga2O3 device processing. 相似文献
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综合了 Ga As和 In P基 HFET工艺中的选择腐蚀技术的有关报道 ,重点介绍了应用 ICP设备和气体组合 BCl3+ SF6 进行异质结材料组合的干法腐蚀实验 ,腐蚀后在显微镜和扫描电镜下观察窗口平整干净、作迁移率测试等与湿法腐蚀的片子相比较没有看出差别 ,适宜用于器件工艺。 相似文献
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微电子机械系统中关键工艺之一就是刻蚀出高深宽比的图形。本文对掺磷多晶硅反应离子刻蚀(RIE)进行了研究,采用两步刻蚀工艺,SF6,CF4,Cl2CF三种气体组合,从原来45度的各向同性刻蚀提高到73度以上的各向异性蚀。射频功率390瓦时,刻蚀速率每分钟200nm。对3.5微米厚的多晶硅,刻蚀时间在20分钟左右,基本上达到要求。 相似文献
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Experimental verification of a low temperature (<20 °C), reactive plasma etch process for copper films is presented. The plasma etch process, proposed previously from a thermochemical analysis of the Cu-Cl-H system, is executed in two steps. In the first step, copper films are exposed to a Cl2 plasma to preferentially form CuCl2, which is volatilized as Cu3Cl3 by exposure to a H2 plasma in the second step. Plasma etching of thin films (9 nm) and thicker films (400 nm) of copper has been performed; chemical composition of sample surfaces before and after etching has been determined by X-ray photoelectron and flame atomic absorption spectroscopies. 相似文献
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利用光刻胶作刻蚀掩模对半导体样品进行感应耦合等离子体干法刻蚀时发现光刻胶掩模在刻蚀后表面出现凸起和孔洞等异常现象, 等离子体会透过部分孔洞对样品表面产生刻蚀损伤。利用探针式表面轮廓仪和激光共聚焦显微镜对这些异常现象进行了分析, 认为是刻蚀时等离子体气氛中的紫外线对作为掩模的光刻胶进行了曝光作用而释放出一定量的氮气, 从而在光刻胶内外形成了压强差而使光刻胶局部表面产生微凸起; 当光刻胶的强度无法阻止内部氮气的膨胀时, 则会发生类似爆炸的效果, 在光刻胶表面形成孔洞状缺陷, 导致掩模保护作用的失效。 相似文献
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蚀刻在PCB生产中应用和工艺控制 总被引:1,自引:0,他引:1
本文以实验的方法确定蚀刻速度与各参数的关系,控制蚀刻质量的精确度,减少蚀刻过程中侧蚀现象,并详细介绍喷琳蚀刻液在复杂三维曲面上制作精细图形的工艺过程,阐述了在工艺操作过程中应注意的诸多因素,制作精细线宽/间距精度达到2mil/2mil。 相似文献
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V. Srivastav R. Pal B. L. Sharma A. Naik D. S. Rawal V. Gopal H. P. Vyas 《Journal of Electronic Materials》2005,34(11):1440-1445
Mesa structures were etched in HgCdTe using different Br2/HBr/Ethylene glycol (EG) formulations. Etch rate and degree of anisotropy (A) were studied in detail for all of the combinations.
Addition of EG to the conventional etchant gave A>0.5, with controllable etch rates. Optimum etchant composition was determined
to be 2% Br2 in a 3:1 mixture of EG:HBr. This composition resulted in a good anisotropy factor of ∼0.6 and a reasonably optimum etch rate
of ∼2.5 μm/min, with rms surface roughness of ∼2 nm. Kinetics of the etching reaction have also been studied for the optimum
etchant concentration and an etching mechanism has been proposed. 相似文献
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R. T. Green W. S. Tan P. A. Houston T. Wang P. J. Parbrook 《Journal of Electronic Materials》2007,36(4):397-402
Dry etching of GaN-based devices can introduce damage onto exposed layers of the semiconductor. In this paper, electrode-less
wet etching of nominally undoped GaN is investigated in terms of light intensity, solution concentration, and mask geometry
in order to determine the conditions required to obtain smooth surface morphologies. Using the results, surfaces were etched
with a root-mean-squared (RMS) surface roughness of 1.7 nm. Furthermore, the etch selectivity is used to gain access to buried
p-type layers allowing n-p diodes to be fabricated. Contact resistances to the exposed p-type layers were found to be superior to those obtained by dry etching. 相似文献