Electrical and optical properties of InSbSe<Subscript>3</Subscript> amorphous thin films

Electrical conductivity, I–V characteristics and optical properties are investigated for InSbSe₃ amorphous thin films of different thicknesses prepared by thermal evaporation at room temperature. The composition of both the synthesized material and thin films were checked by energy dispersive X-ray spectroscopy (EDX). X-ray analysis indicated that all samples under investigation have amorphous structure. The dc electrical conductivity was measured in the temperature range (303–393 K) and thickness range (149–691 nm). The activation energy ΔE _σ was found to be independent of film thickness in the investigated range. The obtained I–V characteristic curves for the investigated samples are typical for memory switches. The switching voltage increases linearly with film thickness in the range (113–750 nm), while it decreases exponentially with temperature in the range (303–393 K). The switching process can be explained according to an electrothermal process initiated by Joule-heating of the current channel. Measurements of transmittance and reflectance in the spectral range (400–2,500 nm) are used to calculate optical constants (refractive index n and absorption index k). Both n and k are practically independent of film thickness in the investigated range (149–691 nm). By analysis of the refractive index n the high frequency dielectric constant ε_∞ was determined via two procedures and was found to have the values of 9.3 and 9.15. Beyond the absorption edge, the absorption is due to allowed indirect transitions with energy gap of 1.46 eV independent on film thickness in the investigated range.     

Synthesis and optical properties of CeO<Subscript>2</Subscript> nanocrystalline films grown by pulsed electron beam deposition

The nanocrystalline cerium dioxide (CeO₂) thin films were deposited on soda lime (SLG) and Corning glass by pulsed e-beam deposition (PED) method at room temperature. The structure of the produced CeO₂ thin films was investigated by X-ray diffraction (XRD) analysis, X-ray photoelectron spectroscopy (XPS), and micro Raman spectroscopy. The surface topography of the films was examined by atomic force microscopy (AFM). Film thickness and growth morphologies were determined with FEG-SEM from the fracture cross sections. XPS studies gave a film composition composed of +4 and +3 valent cerium typical to nanocrystalline ceria structures deficient in oxygen. The ceria films were polycrystalline in nature with a lattice parameter (a) of 0.542 nm. The Raman characteristics of the source material and the films deposited were very similar in character. Raman lines for thin film and bulk CeO₂ was observed at 465 cm⁻¹. The optical properties of the CeO₂ films were deduced from reflectance and transmittance measurements at room temperature. From the optical model, the refractive index was determined as 1.8–2.7 in the photon energy interval from 3.5 to 1.25 eV. The optical indirect band gap (E _g) of CeO₂ nanocrystalline films was calculated as 2.58 eV.     

Investigation of forming-gas annealed CeO<Subscript>2</Subscript> thin film on GaN

The effects of post-deposition annealing temperatures (400, 600, 800, and 1,000°C) in forming gas (95% N₂ + 5% H₂) ambient on metal–organic decomposed cerium oxide (CeO₂) thin films deposited on n-type GaN substrate had been investigated. The occurrence of CeO₂ phase transformation was reported and presence of CeO₂, α-Ce₂O₃, and β-Ga₂O₃ had been detected, depending on the annealing temperature. As the annealing temperature increased, grain size and microstrains of CeO₂ films were, respectively, increased and reduced. Metal–oxide–semiconductor characteristics of the annealed samples were systematically investigated. The highest dielectric breakdown field was perceived by sample annealed at 400°C due to the reduction of semiconductor–oxide interface trap density and effective oxide charge.     

General aspects of the growth of In-In<Subscript>2</Subscript>O<Subscript>3</Subscript> films

Transformations in indium nanolayers have been studied by optical spectroscopy, microscopy, and gravimetry in relation to the thickness of the layers (2–147 nm) and heat treatment temperature (473–873 K) and time (0–120 min). The kinetic curves for the degree of conversion are adequately described by a linear, inverse logarithmic, parabolic, or logarithmic law, depending on the thickness of the indium film and heat treatment temperature. We have measured the contact potential difference across the In and In₂O₃ films and the photovoltage in the In-In₂O₃ system. The results have been used to derive the energy band diagram of the In-In₂O₃ system. A model has been proposed for the thermal transformation of indium films, which involves oxygen adsorption steps, charge carrier redistribution in the In-In₂O₃ interfacial field (positive on the In₂O₃ side), and In₂O₃ formation.     

Highly textured La<Subscript>2</Subscript>Zr<Subscript>2</Subscript>O<Subscript>7</Subscript> and CeO<Subscript>2</Subscript> buffer layers by ink jet printing for coated conductors

The objective of this paper is to prove the possibility to produce single side buffered substrates for coated conductors. We report for the first time the production of highly textured NiW/La₂Zr₂O₇/CeO₂ system by all-chemical solution deposition means using an in-house built drop-on-demand ink-jet printer. Lanthanum zirconate precursor ink was produced using lanthanum acetate and zirconium n-propoxide modified with propionic and acetic acid, respectively, and diluted with methanol. Cerium oxide precursor ink was prepared using cerium acetylacetonate dissolved in acetylacetone and diluted in methanol. Optimized ink jet control parameters (inter-droplet distance, nozzle opening time and pressure in the chamber) allowed the deposition of homogeneous highly textured films with a thickness of approximately 150–200 nm at speeds as high as 27 cm/min. La₂Zr₂O₇ film showed in plane and out of plane misalignment of 6.6° and 7.4°, respectively, whereas values obtained for CeO₂ were 7.8° and 8.1°, respectively. This study represents a step forward in the production of reel-to-reel coated conductors in an efficient and economic way.     

Effects of post-deposition annealing temperature and ambient on RF magnetron sputtered Sm<Subscript>2</Subscript>O<Subscript>3</Subscript> gate on n-type silicon substrate

Samarium oxide (Sm₂O₃) thin films with thicknesses in the range of 15–30 nm are deposited on n-type silicon (100) substrate via radio frequency magnetron sputtering. Effects of post-deposition annealing ambient [argon and forming gas (FG) (90% N₂ + 10% H₂)] and temperatures (500, 600, 700, and 800 °C) on the structural and electrical properties of deposited films are investigated and reported. X-ray diffraction revealed that all of the annealed samples possessed polycrystalline structure with C-type cubic phase. Atomic force microscope results indicated root-mean-square surface roughness of the oxide film being annealed in argon ambient are lower than that of FG annealed samples, but they are comparable at the annealing temperature of 700 °C (Argon—0.378 nm, FG—0.395 nm). High frequency capacitance–voltage measurements are carried out to determine effective oxide charge, dielectric constant and semiconductor-oxide interface trap density of the annealed oxide films. Sm₂O₃ thin films annealed in FG have smaller amount of effective oxide charge and semiconductor-oxide interface trap density than those oxide films annealed in argon. Current–voltage measurements are conducted to obtain barrier heights of the annealed oxide films during Fowler–Nordheim tunneling.     

Characterization of spray deposited CoWO<Subscript>4</Subscript> thin films for photovoltaic electrochemical studies

Preparation of Cobalt tungstate (CoWO₄) thin film by spray pyrolysis with ammonical solution as a precursor is presented. The phase and surface morphology characterizations have been carried out by XRD and SEM analysis. The study of optical absorption spectrum in the wavelength range 350 – 850 nm shows direct as well as indirect optical transitions in the thin film material. The d. c. electrical conductivity measurements in the temperature range 310–500 K indicate semiconducting behavior of the thin film. The thin films deposited on fluorine doped tin oxide (FTO) coated conducting glass substrates were used as a photoanode in photovoltaic electrochemical (PVEC) cell with configuration: CoWO₄ | Ce⁴⁺, Ce³⁺ | Pt; 0.1 M in 0.1 N H₂SO₄. The PVEC characterization reveals the fill factor and power conversion efficiency to be 0.36 and 0.62%, respectively. The flat band potential is found to be −0.18 V (SCE).     

Facile fabrication of NiO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>H<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> films and their unique electrochromic properties

The electrochromic (EC) NiO _x H _y films were fabricated through a facile sol–gel method. The formation of high quality NiO _x H _y films came from adding the xerogel back into the sol and prolonging the annealing time at gradually increasing temperature up to 250 °C. Scanning electron microscopy and atomic force microscopy characterizations indicated films were compact, homogenous, and smooth. Glance angle X-ray diffraction investigation testified NiO _x H _y films were of poor crystallization. The Fourier transform infrared, and thermogravimetry and differential thermal analysis showed that films contained the mixture of NiO, Ni(OH)₂, NiOOH, water, and organic substance. With the increasing of the xerogel ratio, the optical absorbance and reflectance of films had larger differences between the colored and bleached state, respectively. The film with the xerogel ratio of 1:5 showed excellent EC properties with a transmittance contrast as high as 60.88% at λ = 560 nm, which was higher than other sol–gel nickel oxide films reported.     

Dependence of Microstructure and <Emphasis Type="Italic">J</Emphasis><Subscript>c</Subscript> of YBCO Films on CeO<Subscript>2</Subscript> Cap Layers Deposited by Multi-plume PLD

In order to achieve high-performance YBa₂Cu₃O_7?x (YBCO)coated conductors (CCs) fabricated in industrial scale, it is necessary to enhance the transport properties and production speed of the CCs for use in various application forms. The transport performance of CCs depends upon the inner structure of the conductors, which make it important to analyze the microstructure and transport properties. The thickness of the buffer layer is a factor in improving speed. In this work, we deposited YBCO films on CeO₂ cap layers with different thicknesses ranging from 21 to 563 nm by multi-plume pulsed laser deposition (PLD) and investigated the dependence of the microstructure and superconducting properties of YBCO film on the thickness of CeO₂ films. The crystalline structure and surface morphology of YBCO films are systematically characterized by means of XRD, AFM, SEM and TEM. The critical current of YBCO film was measured by the conventional four-probe method at 77 K, in self-field. The results showed that the microstructure and superconducting performance of YBCO film were strongly dependent on the thickness of CeO₂ films. At the optimal CeO₂ layer thickness of 221 nm, the YBCO film exhibited a sharp in-plane and out-of-plane texture of full width at half maximum (FWHM) values of 1.5° and 2.4°, respectively, and smooth morphology of root mean square (RMS) value as low as 4.0 nm. The sharply biaxially textured YBCO films with the critical current density as high as 4.7 × 10⁶ A/cm² (77 K, in self-field) were obtained on CeO₂/MgO/Y₂O₃/Al₂O₃/C276 architecture.     

Production of the Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript> transparent nanostructured ceramics

The nanocrystalline Y₃Al₅O₁₂ ceramics with different phase compositions, microstructures, and optical characteristics have been prepared by low-temperature consolidation of the Y₃Al₅O₁₂ powder at pressures from 6 to 7.7 GPa in the temperature range from 250 to 550°C. The conditions have been defined for obtaining transparent nanostructured ceramics Y₃Al₅O₁₂ having grains of size 20–40 nm and a transmission coefficient in the visible region of 40–45%. The criteria for the transparency of the nanostructured ceramics have been formulated and the ways of an improvement of its optical characteristics are discussed.     

Effect of Al doping and deposition runs on structural and optical properties of In<Subscript>2</Subscript>S<Subscript>3</Subscript> thin films grown by CBD

β-In_2−x Al _x S₃ thin films have been grown on glass substrate by chemical bath deposition for different value of Al concentration y = (([Al])/([In]))_sol (0 ≤ y ≤ 5 at.%). Samples have been characterized using X-ray diffraction, atomic force microscopy and by spectrophotometric measurements. The influence of the increase of y ratio in the structural and optical properties are described and discussed in terms of crystallinity improvement. In order to increase film thickness of β-In_2−x Al _x S₃, we have been realized multi-deposition system. The structural, the surface morphology as well as the optical properties seem to be improved as the film thickness is of about 1200 nm.     

Dielectric behavior of Cu–GeO<Subscript>2</Subscript> cermet thin films

Capacitance and dielectric loss measurements were carried out using an Al/Cu–GeO₂/Al sandwich structure for 0 to 10 vol% Cu films, 120–400 nm thick, deposited at 0.4–1.5 nm/s in the frequency and temperature range 1–10⁶ Hz and 90–573 K, respectively. The variation of capacitance and dielectric loss with frequency and temperature follows the Goswami and Goswami model. Capacitance decreases slowly with increasing thickness and also varies with the change in deposition rate of the cermet film.     

Nanocrystalline TiO2 thin films for NH3 monitoring: microstructural and physical characterization

Nanocrystalline titanium oxide thin films have been deposited by spin coating technique and then have been analyzed to test their application in NH₃ gas-sensing technology. In particular, spectrophotometric and conductivity measurements have been performed in order to determine the optical and electrical properties of titanium oxide thin films. The structure and the morphology of such material have been investigated by X ray diffraction, Scanning microscopy, high resolution electron microscopy and selected area electron diffraction. The X-ray diffraction measurements confirmed that the films grown by this technique have good crystalline tetragonal mixed anatase and rutile phase structure. The HRTEM image of TiO₂ thin film showed grains of about 50–60 nm in size with aggregation of 10–15 nm crystallites. Selected area electron diffraction pattern shows that the TiO₂ films exhibited tetragonal structure. The surface morphology (SEM) of the TiO₂ film showed that the nanoparticles are fine with an average grain size of about 50–60 nm. The optical band gap of TiO₂ film is 3.26 eV. Gas sensing properties showed that TiO₂ films were sensitive as well as fast in responding to NH₃. A high sensitivity for ammonia indicates that the TiO₂ films are selective for this gas.     

Tunable optical and nano-scale electrical properties of WO<Subscript>3</Subscript> and Ag-WO<Subscript>3</Subscript> nanocomposite thin films

WO₃ and Ag-WO₃ nanocomposite thin films have been synthesized from pure WO₃ and Ag-WO₃ composite pressed powder targets submitted to pulses generated by a frequency quadrupled Nd:yttrium aluminium garnet (YAG; λ = 266 nm, τ ~ 5 ns, ν = 10 Hz) laser source. The irradiations were performed in low pressure oxygen atmosphere. The obtained results proved the possibility to tailor the synthesized thin films optical properties in the UV–Visible spectral region and their nano-scale electrical characteristics through the process parameters, as ambient oxygen pressure value during the thin films deposition and Ag concentration of the Ag-WO₃ composite targets. The tunable optical and electrical features allow for the creation of new materials for future applications as photocatalysts, transparent conducting electrodes, electrochromic or chemical and biological sensor devices.     

Optical band gap of Sn<Subscript>0.2</Subscript>Bi<Subscript>1.8</Subscript>Te<Subscript>3</Subscript> thin films

Sn_0.2Bi_1.8Te₃ thin films were grown using the thermal evaporation technique on a (001) face of NaCl crystal as a substrate at room temperature. The optical absorption was measured in the wave number range 500–4000 cm⁻¹. From the optical absorption data the band gap was evaluated and studied as a function of film thickness and deposition temperature. The data indicate absorption through direct interband transition with a band gap of around 0.216 eV. The detailed results are reported here.     

Structural and surface morphological properties of chemically deposited Mo<Subscript>0.5</Subscript>W<Subscript>0.5</Subscript>S<Subscript>2</Subscript> thin film

Preparation of layered type semiconductor Mo_0.5W_0.5S₂ ⁻ thin films has been successfully done by using chemical bath deposition method. Objective of the studies are related to structural, optical, morphological and electrical properties of the thin films. The preparation method is based on the reaction between tartarate complex of Mo and W with thiourea in an aqueous alkaline medium at 363 K. X-Ray diffraction reveals a polycrystalline film composed of both MoS₂ and WS₂ phases. The optical study shows that the band gap of the film is 1.6 eV. Electrical conductivity is high which is in the order of 10⁻³–10⁻² (Ώ cm)⁻¹.     

Electrical conductivity and dielectric properties of cadmium thiogallate CdGa<Subscript>2</Subscript>S<Subscript>4</Subscript> thin films

Cadmium thiogallate CdGa₂S₄ thin films were prepared using a conventional thermal evaporation technique. The dark electrical resistivity calculations were carried out at different elevated temperatures in the range 303–423 K and in thickness range 235–457 nm. The ac conductivity and dielectric properties of CdGa₂S₄ film with thickness 457 nm has been studied as a function of temperature in the range from 303 to 383 K and in frequency range from 174 Hz to 1.4 MHz. The experimental results indicate that σ_ac(ω) is proportional to ω ^s and s ranges from 0.674 to 0.804. It was found that s increases by increasing temperature. The results obtained are discussed in terms of the non overlapping small polaron tunneling model. The dielectric constant (ε′) and dielectric loss (ε″) were found to be decreased by increasing frequency and increased by increasing temperature. The maximum barrier height (W _m) was estimated from the analysis of the dielectric loss (ε″) according to Giuntini’s equation. Its value for the as-deposited films was found to be 0.294 eV.     

Effects of Al content on the properties of ZnO:Al films prepared by Al<Subscript>2</Subscript>O<Subscript>3</Subscript> and ZnO co-sputtering

Aluminum doped zinc oxide (AZO) films were deposited on quartz substrates by radio-frequency magnetron co-sputtering method with ZnO and Al₂O₃ ceramic targets. The structural, optical and electrical properties of these films as a function of the Al content were investigated. XRD results reveal that the AZO films are wurtzite structure with (002) preferred orientation. The average transmittance of all the films is higher than 80% in a wide wavelength range from 400 to 1,500 nm. The band gap energy, calculated from their optical absorption spectra, is in the range of 3.50–3.66 eV depending on the Al content. Doping of Al³⁺ in the ZnO makes the film surface roughness decrease. The dopant Al³⁺ acts as electron donor by which the electrical conductivity and carrier concentration of the films are obviously increased until the Al³⁺ reaches its saturation content of about 4.50 at.%.     

Optical,structural and electrical investigations on PbTe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> alloys

The fabrication of devices with lead salts and their alloys with detecting and lasing capabilities has been an important technological development. The high quality polycrystalline thin films of PbTe_1−x S _x with variable composition (0 ≤ x ≤ 1) have been deposited onto ultra clean glass substrates by vacuum evaporation technique. Optical, structural and electrical properties of PbTe_1−x S _x thin films have been examined. Absorption coefficient and band gap of the films were determined by absorbance measurements in wavelength range 2,500–5,000 nm using FTIR spectrophotometer. Sample nature, crystal structure and lattice parameter of the films were determined from X-ray diffraction patterns. DC conductivity and activation energy of the films were measured in temperature range 300–380 K through I–V measurements.     

Optical and electrical properties of obliquely deposited a-GeSe<Subscript>2</Subscript> films

Oblique deposition and exposure to photons of energy greater than the bandgap have a marked effect on the structure and consequently on electrical and optical properties of amorphous chalcogenides. This paper presents a detailed study of photoinduced effect and oblique deposition effect on electrical and optical properties of a-GeSe₂ films deposited at different angles (0°–80°). The indirect-optical bandgap energy (2.18 eV) was found to be independent of angle of incidence. The spectral response of refractive index and extinction coefficient has been determined in the wavelength range of 0.6–1 μm using the transmission spectra. Refractive index decreases with the increase in angle of incidence. The value of refractive index was observed to be 2.28 for 0° and 2.00 for 80° films at 0.646 μm. An increase in bandgap was also observed on exposure to the UV light for ∼120 min. The change in bandgap became more significant with the increase in angle of incidence (∼ 2.3% for 0° and ∼10.6% for 80°). The temperature dependence of conductivity along with time dependence and spectral response of photocurrent has also been investigated.