Photoelectric characterization of Cu(In,Ga)S2 solar cells obtained from rapid thermal processing at different temperatures

CuInS₂-based solar cells have a strong potential of achieving high efficiencies due to their ideal band gap of 1.5 eV. A further increase in the efficiency is expected from doping the absorber film with gallium due to enlargement of the band gap (E_g) and correspondingly the open-circuit voltage (V_OC). We investigated Cu(In,Ga)S₂ solar cells obtained from stacked metal layers sputtered from In and (Cu,Ga) targets followed by rapid thermal processing (RTP) in sulfur vapor. Depending on the actual RTP temperature profile, the films might exhibit CuInS₂/CuGaS₂ (top/bottom) segregation, which is rather detrimental for a large V_OC. We found that only precursors sulfurized at sufficiently high temperatures exhibit the desired interdiffusion of the segregated CuInS₂/CuGaS₂ layers resulting in an increased V_OC. Moreover, temperature dependent current-voltage profiling (suns-V_OC-analysis) yielded strong indications for improved current collection and reduced losses for devices with proper interdiffusion of the CuInS₂/CuGaS₂ layers. A more fundamental question is related to the variation and formation of defect states in differently processed absorber films. The studied samples were thus further investigated by means of admittance spectroscopy, which allowed us to confirm the presence of three individual defect states in both absorber configurations. Two defects exhibit activation energies, which remain unchanged upon varying the RTP temperature whereas a third state exhibits significantly increased activation energy in devices showing interdiffusion of CuInS₂/CuGaS₂ layers. According to the characteristic shift of the conduction band edge upon Ga-doping we conclude that the latter defect level corresponds with the minority carriers in the p-type absorbers.     

Effects of substrate temperature on the structural and electrical properties of Cu(In,Ga)Se2 thin films

Polycrystalline Cu(In,Ga)Se₂ (CIGS) thin films were deposited onto soda-lime glass substrates using the three-stage process at the substrate temperature (T_sub) varying from 350 to 550 °C. The effect of T_sub on the structural and electrical properties of CIGS films has been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and Hall effect measurement. We found that the surface roughness, constituent phases, film morphologies, resistivity (ρ) and carrier concentration (N_P) of as-grown CIGS films indicated different change trends with increase in T_sub. The higher T_sub gives smooth surface, large grain size and single-phase CIGS films. The values of N_P and ρ have two demarcated regions at T_sub of 380 and 450 °C. At lower T_sub of 380 °C, larger N_P and lower ρ were dominated by the existence of secondary-phase Cu_xSe with lower resistivity. In the case of 450 °C, the obvious changes in N_P and ρ can be attributed to the sufficient Na incorporation diffused from the glass substrate. Finally, the correlation of cell parameters with T_sub was analyzed.     

Studies on Cu2ZnSnS4 (CZTS) absorber layer using different stacking orders in precursor thin films

Cu₂ZnSnS₄ (CZTS) thin films were deposited by sputtering on glass substrates using stacked precursors. The stacked precursor thin films were prepared from Cu, SnS₂ and ZnS targets at room temperature with different stacking orders of Cu/SnS₂/ZnS/glass (A), ZnS/Cu/SnS₂/glass (B) and SnS₂/ZnS/Cu/glass (C). The stacked precursor thin films were sulfurized using a tubular rapid thermal annealing system in a mixed N₂ (95%)+H₂S (5%) atmosphere at 550 °C for 10 min. The effects of the stacking order in the precursor thin films on the structural, morphological, chemical, electrical and optical properties of the CZTS thin films were investigated. X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy studies showed that the annealed CZTS thin film using a stacking order A had a single kesterite crystal structure without secondary phases, whereas stacking orders B and C have a kesterite phase with secondary phases, such as Cu_2−xS, SnS₂ and SnS. The annealed CZTS thin film using stacking order A showed a very dense morphology without voids. On the other hand, the annealed CZTS thin films using stacking orders B and C contained the volcano shape voids (B) and Sn-based secondary phases (C) on the surface of the annealed thin films. The direct band gap energies of the CZTS thin films were approximately 1.45 eV (A), 1.35 eV (B) and 1.1 eV (C).     

Preparation of Cu(In,Ga)(S,Se)2 thin films by sequential evaporation and annealing in sulfur atmosphere

Cu(In,Ga)(S,Se)₂ thin films with high Ga/III ratio (around 0.8) were prepared by sequential evaporation from CuGaSe₂, CuInSe₂, In₂Se₃ and Ga₂Se₃ compounds and then annealing in H₂S gas atmosphere. The annealing temperature was varied from 400 to 500 °C. These samples were characterized by means of XRF, EPMA, XRD and SEM. The S/(S+Se) mole ratio in the thin films increased with increase in the annealing temperature, keeping the Cu, In and Ga contents nearly constant. The open circuit voltage increased and the short circuit current density decreased with increase in the annealing temperature. The best solar cell using Cu(In,Ga)(S,Se)₂ thin film with Ga/(In+Ga)=0.79 and S/(S+Se)=0.11 annealed at 400 °C demonstrated V_oc=535 mV, I_sc=13.3 mA/cm², FF=0.61 and efficiency=4.34% without AR-coating.     

Ga homogenization by simultaneous H2Se/H2S reaction of Cu-Ga-In precursor

The compositional distribution of Ga and S in Cu(InGa)(SeS)₂ films fabricated by a simultaneous selenization and sulfization process was systematically investigated. At low H₂Se/H₂S reaction temperature (490 °C), most Ga remains at the back of the film adjacent to the Mo back contact. However, the Ga/III ratios at the top and bottom of the Cu(InGa)(SeS)₂ layer monotonically increase and decrease with reaction temperatures, respectively. At T>550 °C, homogeneous distribution of elemental Ga and In through film is achieved. Further increase of the reaction temperature (e.g., T>550 °C) causes phase segregation on the surface of the Cu(InGa)(SeS)₂ film confirmed by XRD, GIXRD and EDS analysis.     

Increased homogeneity and open-circuit voltage of Cu(In,Ga)Se2 solar cells due to higher deposition temperature

Cu(In,Ga)Se₂-absorber deposition on commonly used soda lime glass is constrained in temperature by the softening of the substrate. To overcome this limitation, a high-temperature resistant glass was employed as a substrate for the growth of Cu(In,Ga)Se₂-absorbers by multi-stage coevaporation at standard (530 °C) and elevated (610 °C) temperatures. Absorbers were investigated using cathodoluminescence and X-ray diffraction and compared to the performance of solar cells fabricated from these absorbers. The higher deposition temperature is shown to lead to an increased homogeneity of the absorber layer both laterally and vertically and strongly enhanced open-circuit voltage. A best certified efficiency of 19.4% is reached.     

p-Type CuSbS2 thin films by thermal diffusion of copper into Sb2S3

We report the preparation of copper antimony sulfide (CuSbS₂) thin films by heating Sb₂S₃/Cu multilayer in vacuum. Sb₂S₃ thin film was prepared from a chemical bath containing SbCl₃ and Na₂S₂O₃ salts at room temperature (27 °C) on well cleaned glass substrates. A copper thin film was deposited on Sb₂S₃ film by thermal evaporation and Sb₂S₃/Cu layers were subjected to annealing at different conditions. Structure, morphology, optical and electrical properties of the thin films formed by varying Cu layer thickness and heating conditions were analyzed using different characterization techniques. XRD analysis showed that the thin films formed at 300 and 380 °C consist of CuSbS₂ with chalcostibite structure. These thin films showed p-type conductivity and the conductivity value increased with increase in copper content. The optical band gap of CuSbS₂ was evaluated as nearly 1.5 eV.     

The structural and material properties of CuInSe2 and Cu(In,Ga)Se2 prepared by selenization of stacks of metal and compound precursors by Se vapor for solar cell applications

CuInSe₂ films and related alloys were prepared by thermal evaporation of Cu, InSe and GaSe compounds instead of elemental sources. Band-gap tailoring in Cu(In,Ga)Se₂-based solar cells is an interesting path to improve their performance. In order to get comparable results, solar cells with Ga/(In+Ga) ratios x=0 and 0.3 were prepared, all with a simple two-step sequential evaporation process. The morphology of the resulting films grown at 550 °C was characterized by the presence of large facetted chalcopyrite grains, which are typical for device quality material. It is important to note that absorber films with elemental gallium resulted in a significant decrease in the average grain size of the film. The X-ray diffraction (XRD) diffraction pattern of single-phase Cu(In,Ga)Se₂ films depicts diffraction peaks shifting to higher 2θ values compared to that of pure CuInSe₂. The photoluminiscence (PL) spectrum of Cu(In,Ga)Se₂ thin films also depicts the presence of the peak at higher energy that is attributed to the incorporation of gallium into the chalcopyrite lattice. As the band gap of CIGS increases with gallium content, desirable effects of producing higher open-circuit voltage and low current density devices were achieved. A corresponding increase in device efficiency with gallium content caused by a higher fill factor was observed. The best results show passive area efficiencies of up to 10.2% and open-circuit voltage (V_oc) up to 519 mV at a minimum band gap of 1.18 eV.     

Optical properties and thermal stability of pulsed-sputter-deposited AlxOy/Al/AlxOy multilayer absorber coatings

Spectrally selective Al_xO_y/Al/Al_xO_y multilayer absorber coatings were deposited on copper (Cu) and molybdenum (Mo) substrates using a pulsed sputtering system. The Al targets were sputtered using asymmetric bipolar-pulsed DC generators in Ar+O₂ and Ar plasmas to deposit an Al_xO_y/Al/Al_xO_y coating. The compositions and thicknesses of the individual component layers were optimized to achieve high solar absorptance (α=0.950-0.970) and low thermal emittance (ε=0.05-0.08). The X-ray diffraction data in thin film mode showed an amorphous structure of the Al_xO_y/Al/Al_xO_y coating. The X-ray photoelectron spectroscopy data of the Al_xO_y/Al/Al_xO_y multilayer absorber indicated that the Al_xO_y layers present in the coating were non-stoichiometric. The optical constants (n and k) of the multilayer absorber were determined from the spectroscopic ellipsometric data. Drude's free-electron model was used for generating the theoretical dispersion of optical constants for Al films, while the Tauc-Lorentz model was used for modeling optical properties of the dielectric Al_xO_y layers. In order to study the thermal stability of the Al_xO_y/Al/Al_xO_y coatings, they were subjected to heat treatment (in air and vacuum) at different temperatures and durations. The multilayer absorber deposited on Cu substrates exhibited high solar selectivity (α/ε) of 0.901/0.06 even after heat-treatment in air up to 400 °C for 2 h. At 450 °C, the solar selectivity decreased significantly on Cu substrates (e.g., α/ε=0.790/0.07). The coatings deposited on Mo substrates were thermally stable up to 800 °C in vacuum with a solar selectivity of 0.934/0.05. The structural stability of the absorber coatings heat treated in air (up to 400 °C) and vacuum (up to 800 °C) was confirmed by micro-Raman spectroscopy measurements. Studies on the accelerated aging tests suggested that the absorber coatings on Cu were stable in air up to 75 h at 300 °C and the service lifetime of the multilayer absorber was predicted to be more than 25 years. Further, the activation energy for the degradation of the multilayer absorber heat treated for longer durations in air is of the order of 64 kJ/mol.     

Electrodeposition of CuInSe2 from ethylene glycol at 150 °C

Polycrystalline chalcopyrite thin films were potentiostatically electrodeposited from ethylene glycol solution onto SnO₂-coated glass substrates at 150 °C. The thickness of the layers was estimated using talysurf at 1.0 μm after deposition for 60 min. X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analyses were used to identify and characterise compounds formed at different potentials. It was found that Cu_1.75Se formation was dominant at −0.80 V vs Se and indium assimilation increased at more negative voltages forming a mixture of compounds including numerous Cu-Se binary phases and copper indium diselenide (CuInSe₂) at the cathode. As-deposited materials showed poor crystallinity and therefore films were annealed in Ar/5%H₂ in the presence of Se to improve the material quality for all investigations. Although the films were deposited at 150 °C, no noticeable improvement of the CuInSe₂ was observed, suggesting growth from aqueous media at room temperature to be preferable.     

Structural, morphological and electrochemical properties of nanocrystalline V2O5 thin films deposited by means of radiofrequency magnetron sputtering

Due to easiness of preparation and high energy density, V₂O₅ nanocrystalline thin films are particularly attractive as cathode materials for all-solid-state rechargeable lithium microbatteries. However, their electrochemical performances are strictly related to the film microstructure, which, in turn, is related to the nature and parameters of the deposition technique. For this reason, the preparation of thin films with reproducible electrochemical properties is still an open problem.Here, we report on the deposition of V₂O₅ crystalline thin films by means of reactive radiofrequency (r.f.) magnetron sputtering, using vanadium metal as the target. Different deposition times and substrate temperatures were adopted. X-ray powder diffraction (XRD) and atomic force microscopy were used to investigate the structural and morphological features of the films. In particular, XRD analysis revealed that the deposition parameters affect the crystallographic orientation of the films. A h 0 0 orientation is observed in case of thin samples (about 100 nm) prepared at 300 °C, whereas a 1 1 0 preferential growth is obtained for thicker films. Films deposited at 500 °C display a 0 0 1 orientation irrespective on the deposition time.Reversible Li intercalation/deintercalation processes and high specific capacity are observed for the h 0 0-oriented V₂O₅ thinner films, with the ab plane arranged perpendicular to the substrate. In this case, the cycling behaviour is very promising, and a stable capacity higher than 300 mAh g⁻¹ was delivered in the potential range 3.8-1.5 V at 1C rate over at least 70 cycles.     

Fabrication of pentanary Cu(InGa)(SeS)2 absorbers by selenization and sulfurization

The objective of this study is to find the key factors to improve V_oc. In this study, pentanary Cu(InGa)(SeS)₂ absorbers were prepared by selenization and sulfurization or a sulfurization after selenization (SAS) method. It is found that the “sulfurization degree” defined as a function of temperature and holding time at the sulfurization step is a key factor to enhance the Ga diffusion and improve V_oc. It is also verified that increase in the temperature difference between selenization and sulfurization enhances the incorporation of S into the selenide absorber. Applying these findings related to Ga and S, V_oc of 642 mV/cell and efficiency of 14.3% are achieved on a 30 cm×30 cm-sized soda-lime glass substrate.     

Fabrication of Cu2ZnSnS4 films by sulfurization of Cu/ZnSn/Cu precursor layers in sulfur atmosphere for solar cells

Cu₂ZnSnS₄ (CZTS) absorbers were grown by sulfurization of Cu/ZnSn/Cu precursors in sulfur atmosphere. The reaction mechanism of CZTS formation from the precursor was analyzed using XRD and Raman spectroscopy. The films with a single phase CZTS were formed at 560 and 580 °C by sulfurization for 30 min. The film grown at 560 °C showed bi-layer morphology with grooved large grains on the top and dense small grains near the bottom of the film. On the other hand, the film grown at 580 °C showed large grains with grooves that are extended from surface top to bottom of the film. The solar cell fabricated with the CZTS film grown at 560 °C showed the best conversion efficiency of 4.59% for 0.44 cm² with V_oc=0.545 V, J_sc=15.44 mA/cm², and FF=54.6. We found that further improvement of the microstructure of CZTS films can increase the efficiency of CZTS solar cells.     

Effect of a reducing agent for silver on the electrochemical activity of an Ag/Ba0.5Sr0.5Co0.8Fe0.2O3−δ electrode prepared by electroless deposition technique

Silver-modified Ba_0.5Sr_0.5Co_0.8Fe_0.2O_3−δ (Ag/BSCF) electrodes were prepared using an electroless deposition technique. The morphology, microstructure and oxygen reduction reaction activity of the resulted Ag/BSCF electrodes were comparatively studied using Fourier transform infrared spectra, environmental scanning electron microscopy, temperature-programmed oxygen desorption, X-ray diffraction, and electrochemical impedance spectroscopy. An area-specific resistance as low as 0.038 Ω cm² was achieved for N₂H₄-reduced Ag/BSCF cathode at 600 °C. Carbonates were detected over the BSCF surface during the reduction of silver, which deteriorated both the charge-transfer process and diffusion process of HCHO-reduced Ag/BSCF cathode for the oxygen electrochemical reduction reaction. An anode-supported single cell with an N₂H₄-reduced Ag/BSCF cathode showed a peak power of 826 mW cm⁻² at 600 °C. In comparison, only 672 mW cm⁻² was observed with the HCHO-reduced Ag/BSCF cathode.     

Batch and continuous biohydrogen production from starch hydrolysate by Clostridium species

In this study, hydrogen gas was produced from starch feedstock via combination of enzymatic hydrolysis of starch and dark hydrogen fermentation. Starch hydrolysis was conducted using batch culture of Caldimonas taiwanensis On1 able to hydrolyze starch completely under the optimal condition of 55 °C and pH 7.5, giving a yield of 0.46–0.53 g reducing sugar/g starch. Five H₂-producing pure strains and a mixed culture were used for hydrogen production from raw and hydrolyzed starch. All the cultures could produce H₂ from hydrolyzed starch, whereas only two pure strains (i.e., Clostridium butyricum CGS2 and CGS5) and the mixed culture were able to ferment raw starch. Nevertheless, all the cultures displayed higher hydrogen production efficiencies while using the starch hydrolysate, leading to a maximum specific H₂ production rate of 116 and 118 ml/g VSS/h, for Cl. butyricumCGS2 and Cl. pasteurianum CH5, respectively. Meanwhile, the H₂ yield obtained from strain CGS2 and strain CH5 was 1.23 and 1.28 mol H₂/mol glucose, respectively. The best starch-fermenting strain Cl. butyricum CGS2 was further used for continuous H₂ production using hydrolyzed starch as the carbon source under different hydraulic retention time (HRT). When the HRT was gradually shortened from 12 to 2 h, the specific H₂ production rate increased from 250 to 534 ml/g  VSS/h, whereas the H₂ yield decreased from 2.03 to 1.50  mol H₂/mol glucose. While operating at 2 h HRT, the volumetric H₂ production rate reached a high level of 1.5 l/h/l.     

An amorphous LiCo1/3Mn1/3Ni1/3O2 thin film deposited on NASICON-type electrolyte for all-solid-state Li-ion batteries

Amorphous LiCo_1/3Mn_1/3Ni_1/3O₂ thin films were deposited on the NASICON-type Li-ion conducting glass ceramics, Li_1+x+yAl_xTi_2−xSi_yP_3−yO₁₂ (LATSP), by radio frequency (RF) magnetron sputtering below 130 °C. The amorphous films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The Li/PEO₁₈-Li(CF₃SO₂)₂N/LATSP/LiCo_1/3Mn_1/3Ni_1/3O₂/Au all-solid-state cells were fabricated to investigate the electrochemical performance of the amorphous films. It was found that the low-temperature deposited amorphous cathode film shows a high discharge voltage and a high discharge capacity of around 130 mAh g⁻¹.     

Synthesis,characterization, and photoelectrochemical study of Cd1−xZnxS solid solution thin films deposited by spray pyrolysis for water splitting

A series of Cd_1−xZn_xS thin films were deposited onto indium-doped tin oxide (ITO) coated glass substrates by ultrasonic spray pyrolysis CdCl₂, ZnCl₂, and CS(NH₂)₂ aqueous solutions. The XRD patterns revealed that these films processed a wurtzite structure and a series of solid solutions of CdS and ZnS formed. The lattice constants decreased as the x value increased. From the transmittance and reflectance, the optical band gap was estimated to be between 2.45 eV and 3.72 eV, and the band gap increased as the x value increased according to a near linear relationship with the x value. The Mott-Schottky tests revealed that the flat potential shifted negatively as the x value increased. The photo responses agreed with the optical absorption of these films quite well. The current–potential measurements under chopped Xe lamp light irradiation show that the CdS deposited at 300 °C had best photoresponse. Its photoelectrochemical efficiency was estimated to be about 0.95% under 0.73 V bias from two electrodes current–potential tests.     

Photoelectrochemical properties of CdSxSe1−x films

CdS_xSe_1−x films of different composition (0 < x < 1) were deposited by pulse plating technique at different duty cycles in the range of 10-50%. The films were polycrystalline and exhibited hexagonal structure. The band gap of the films varies from 1.68 to 2.39 eV as the concentration of CdS increases. Energy Dispersive analysis of X-rays (EDAX) measurements indicate that the composition of the films are nearly the same as that of the precursors considered for the deposition. Atomic force microscopy studies indicated that the grain size increased from 20 to 200 nm as the concentration of CdSe increased. Photoelectrochemical (PEC) cell studies indicated that the films of composition CdS_0.9Se_0.1 exhibited maximum photoactivity. Mott-Schottky studies indicated that the films exhibit n-type behaviour. Spectral response measurements indicated that the photocurrent maxima occurred at the wavelength value corresponding to the band gap of the films.     

TiO2 thin films - Influence of annealing temperature on structural, optical and photocatalytic properties

Nanostructured TiO₂ thin films were deposited on glass substrates by sol-gel dip coating technique. The structural, morphological and optical characterizations of the as deposited and annealed films were carried out using X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM), and UV-vis transmittance spectroscopy. As-deposited films were amorphous, and the XRD studies showed that the formation of anatase phase was initiated at annealing temperature close to 400 °C. The grain size of the film annealed at 600 °C was about 20 nm. The lattice parameters for the films annealed at 600 °C were a = 3.7862 ? and c = 9.5172 ?, which is close to the reported values of anatase phase. Band gap of the as deposited film was estimated as 3.42 eV and was found to decrease with the annealing temperature. At 550 nm the refractive index of the films annealed at 600 °C was 2.11, which is low compared to a pore free anatase TiO₂. The room temperature electrical resistivity in the dark was of the order of 4.45 × 10⁶ ohm-cm. Photocatalytic activity of the TiO₂ films were studied by monitoring the degradation of aqueous methylene blue under UV light irradiation and was observed that films annealed above 400 °C had good photocatalytic activity which is explained as due to the structural and morphological properties of the films.     

Solvent-free,PYR1ATFSI ionic liquid-based ternary polymer electrolyte systems: I. Electrochemical characterization

The electrical properties of solvent-free, PEO–LiTFSI solid polymer electrolytes (SPEs), incorporating different N-alkyl-N-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide, PYR_1ATFSI, ionic liquids (ILs), are reported. For this purpose, PYR_1ATFSI materials containing side alkyl groups with different chain-length and branching, i.e., n-propyl, sec-propyl, n-butyl, iso-butyl, sec-butyl and n-pentyl, were properly synthesized and homogeneously incorporated into the SPE samples without phase separation. The addition of ILs to PEO–LiTFSI electrolytes results in a large increase of the conductivity and in a decrease of the interfacial resistance with the lithium metal anode. Most of the PEO–LiTFSI–PYR_1ATFSI samples showed similar ionic conductivities (>10⁻⁴ S cm⁻¹ at 20 °C) and stable interfacial resistance values (400 Ω cm² at 40 °C and 3000 Ω cm² at 20 °C) upon several months of storage. Preliminary battery tests have shown that Li/P(EO)₁₀LiTFSI + 0.96 PYR_1ATFSI/LiFePO₄ solid-state cells are capable to deliver a capacity of 125 mAh g⁻¹ and 100 mAh g⁻¹ at 30 °C and 25 °C, respectively.