用过滤式电弧沉积系统制备类金刚石薄膜

介绍一种可用于沉积类金刚石薄膜的过滤式真空电弧沉积系统,研究了利用该系统制备的类金刚石薄膜的Ｒａｍａｎ光谱测试结果。实验表明,所设计的系统能可靠地触发并运行１００Ａ的碳电弧,电弧连续稳定燃烧的时间长于１０ｍｉｎ。在Ｓｉ（００１）、硬质合金和不锈钢等衬底上成功地制备出ＤＬＣ薄膜,沉积速度约为６０ｎｍ／ｍｉｎ。Ｒａｍａｎ光谱表明,所制备的ＤＬＣ涂层具有非晶结构,且ｓｐ３含量比脉冲激光沉积的类金刚石薄膜高。     

HFCVD方法沉积金刚石薄膜的生长研究

本文讨论了金刚石薄膜应用于光学领域所偶到的问题，研究了热丝方法生长应用于光学膜的金刚石薄膜过程中，衬底表面的预处理和沉积条件如碳源浓度、衬底温度等对制备膜晶粒尺度和晶粒间界以及膜表面形貌的影响。     

电泳沉积纳米金刚石涂层场发射阴极工艺研究

采用电泳沉积(EPD)制备薄膜的方法,在金属钛片上均匀地涂覆纳米金刚石涂层,经真空热处理,制成场发射阴极.该文主要研究了不同的电泳液配方、电泳电压及电泳时间对涂层制备的影响.实验结果表明,粘度系数较大的电泳液及较低的电泳电压下适当延长电泳时间有利于改善涂层的均匀性和致密性;典型样品开启电场为5.5 V/μm,在20 V/μm场强下的电流密度达到169 μA/cm~2.发光测试表明,发光点密度较大且均匀分布,发光稳定,亮度较高.用X-射线衍射(XRD)和扫描电子显微镜(SEM)对样品的成份及形貌进行了分析,结合其场发射测试结果,解释了样品性能的差异和变化.     

真空微电子器件应用研究

本文叙述了场致发射的机理及几种不同类型场致发射阴极的特点,并对场致发射技术在真空微电子器件方面的应用进行了分析.     

用脉冲激光沉积法制备类金刚石膜及金刚石薄膜

简要评述了用脉冲激光沉积技术制备类金刚石膜及金刚石薄膜的研究进展，总结了激光脉冲沉积制备薄膜的基本原理及其特点，分析了激光波长，能量，衬底温度等对薄膜质量的影响。     

真空微电子器件发射体材料研究概况

改善真空微电子器件发射体材料的性能，有助于大大提高真空微电子器件的性能。本文概述了近年来真空微电子器件发射体材料研究状况，认为目前对金属薄膜材料，合金材料，金刚石薄膜，碳化物，硅化物等的场发射特性的研究工作，将产生一些性能优异的发射体材料。     

电化学沉积DLC薄膜的AFM研究

类金刚石碳膜 (ｄｉａｍｏｎｄｌｉｋｅｃａｒｂｏｎｆｉｌｍｓ ,简称ＤＬＣｆｉｌｍｓ)是一类硬度、光学、电学、化学和摩擦学等特性都类似于金刚石的非晶碳膜。例如 ,它具有高硬度 ,抗磨损 ,化学惰性 ,介电常数低 ,宽光学带隙 ,良好的生物相容性等特点。它可以应用于机械、电子、化学、军事、航空航天等领域 ,具有广泛的应用前景。目前制备类金刚石碳膜一般用气相沉积方法(化学气相沉积法和物理气相沉积法 ) ,但是气相合成实验装置的复杂性和基底的高温都导致了这些方法具有一定的局限性。近年来 ,研究人员开始了在液态低温下电化学沉积制…     

真空电弧沉积的TiN薄膜表面分析

对真空电弧沉积的ＴｉＮ薄膜表面化学组份、组织结构、形貌及库度分布进行了测试与分析。结果表明，薄膜中Ｔｉ、Ｎ两种元素原子比接近１：１，其它杂质元素含量极少，薄膜为ＴｉＮ单相结构，（１１１）晶面择优取向；薄膜表面形貌光滑致密，颗粒含量少；薄膜厚度分布较均匀。     

AIB用于改进PLD沉积在机械瓣膜上的类金刚石膜的质量

用脉冲激光沉积(PLD)法在热解C制作的人工心脏机械瓣膜上沉积类金刚石(DLC)薄膜,并用3KeV的氩离子轰击(AIB)DLC薄膜。采用拉曼(Raman)光谱和X射线光电子能谱(XPS)分别对AIB前后的DLC薄膜进行检测分析,用光学显微镜观察AIB前后的DLC薄膜表面。实验结果表明:AIB不影响薄膜的黏附性。但是可以在一定程度上导致薄膜微观结构的变化和sp3/sp2比值的提高,可以在薄膜中掺杂微量的Ar元素,可以有效消除薄膜表面吸附的O,但对薄膜中C-O、C=O和COOH的影响较小。因此,离子轰击法可以作为一种改进类金刚石薄膜质量的方法。     

红外探测器滤光膜的研究与制备

为满足红外探测器在1.064 m和3~5 m双波段透射,在1.2~2.8 m波段反射,可适应复杂的环境条件、具有高稳定性和可靠性等要求,依据薄膜的设计理论,选择合理的膜系设计方法,借助TFC膜系设计软件对膜系结构进行优化设计。并采用电子束真空蒸发和离子辅助沉积技术,在蓝宝石晶体基底上镀制红外多波段滤光膜。同时对所使用的薄膜材料的光学、物理、化学和机械特性进行分析与研究。通过反复试验,优化工艺参数,使多波段滤光膜得以实现。对所制得的薄膜进行测试,基本满足红外探测器的使用要求。     

Polycrystalline silicon thin film transistors fabricated in various solid phase crystallized films deposited on glass substrates

In this work, we have characterized various types of polysilicon films, crystallized upon thermal annealing from films deposited by low pressure chemical vapor deposition in the amorphous phase and a mixed phase using silane or in the amorphous phase using disilane. Polysilicon thin film transistors (TFTs) were fabricated, at low processing temperatures, in these three types of films on high strain point Corning Code 1734 and 1735 glass substrates. Double layer films, with the bottom layer deposited in a mixed phase and the top in the amorphous phase, allowed TFT fabrication at a drastically reduced thermal budget; optimum values of thicknesses and deposition rates of the layers are reported for reducing the crystallization time and improving film quality. Optimum deposition conditions for TFT fabrication were also obtained for films deposited using disilane. The grain size distribution for all types of films was shown to be wider for a larger grain size. Fabricated TFTs exhibited field effect electron mobility values in the range of 20 to 50 cm²/V·s, subthreshold swings of about 0.5–1.5 V/dec and threshold voltage values of 2–4 V.     

基于反射光谱的单层抗反射膜的非在位膜厚精确控制

提出一种基于反射光谱分析的非在位膜厚控制技术,首先利用椭圆偏振光谱仪确定波长300～1 700 nm范围内的薄膜折射率,由此确定对应于特定波长(如1 550 nm)的最佳抗反射(AR)镀膜沉积条件。然后计算最佳AR镀膜厚度所对应的反射谱,得到相应的CIE标准色谱坐标。通过对比实测镀膜颜色和计算得到的最佳颜色,可以实现小尺寸器件端面上AR镀膜厚度的优化控制。利用这一方法,由等离子体增强化学气相沉积(PECVD)制备的SiNx单层AR镀膜,获得了4.4×10-4的反射率。     

LiNbO_3/ZnO:Al集成结构的外延生长及电性能研究

采用脉冲激光沉积(PLD)法在蓝宝石衬底上先后外延生长了ZnO:Al(ZAO)和LiNbO3(LN)薄膜。通过X射线衍射分析(XRD)可知二者之间的外延关系为:LN(001)//ZAO(001)、LN[110]//ZAO[110]、LN[100]//ZAO[120]。制备了Au/LN/ZAO和ZAO/LN/ZAO两种电容器结构,对其进行了电流-电压(J-E)测试和铁电(P-E)分析,结果表明:LN/ZAO集成结构具有整流作用,ZAO/LN/ZAO结构表现出较好的绝缘性能,所制备的LN薄膜在室温下的剩余极化强度(Pr)约为1×10–6C/cm2,温度的升高能够促进电畴的翻转,使Pr增加为3×10–6C/cm2。     

基于V/F变换下的数字相敏检测监控光学膜厚

本文采用基于电压-频率变换(V/F)的数字相敏检测技术应用于光学监控信号检测,得到的被检测信号的幅度,即光学监控信号波形.而且针对光学监控系统中被检测信号特点,从理论分析角度说明了本方案抑制被检测信号低次谐波和白噪声的性能.仿真分析中针对加入了2,3,4次谐波和零均值随机白噪声,信噪比为20dB,频率为166Hz的被检测信号,利用本方案检测出光学监控信号反射率最大误差＜0.2%.分别利用本方案检测出的光学监控信号和理想监控信号读取反射率极值点对应薄膜厚度,对比可知采用本方案监控膜厚理论误差＜2nm.     

Effects of combined additional indium deposition and potassium fluoride post‐deposition treatments on Cu(In,Ga)Se2 thin film solar cells

The effect of additional indium on copper indium gallium selenide (CIGS) thin films and solar cells was investigated with respect to potassium fluoride post‐deposition treatment (KF‐PDT) using current‐voltage, external quantum efficiency, scanning electron microscopy, X‐ray photoelectron spectroscopy, time‐resolved photoluminescence and capacitance‐voltage measurements. The cell performance, particularly open‐circuit voltage (V _oc) improved drastically by the combined treatments of additional indium deposition after CIGS growth and subsequent KF‐PDT. A Cu deficient layer at the CIGS surface increased after both treatments rather than only KF‐PDT. Photoluminescence intensity, lifetime and net carrier concentration of KF‐untreated CIGS solar cells did not change significantly by only additional indium deposition. However, they improved because of the combined treatments. Copyright © 2017 John Wiley & Sons, Ltd.     

A comparison between thin film solar cells made from co‐evaporated CuIn1‐xGaxSe2 using a one‐stage process versus a three‐stage process

Until this day, the most efficient Cu(In,Ga)Se₂ thin film solar cells have been prepared using a rather complex growth process often referred to as three‐stage or multistage. This family of processes is mainly characterized by a first step deposited with only In, Ga and Se flux to form a first layer. Cu is added in a second step until the film becomes slightly Cu‐rich, where‐after the film is converted to its final Cu‐poor composition by a third stage, again with no or very little addition of Cu. In this paper, a comparison between solar cells prepared with the three‐stage process and a one‐stage/in‐line process with the same composition, thickness, and solar cell stack is made. The one‐stage process is easier to be used in an industrial scale and do not have Cu‐rich transitions. The samples were analyzed using glow discharge optical emission spectroscopy, scanning electron microscopy, X‐ray diffraction, current–voltage‐temperature, capacitance‐voltage, external quantum efficiency, transmission/reflection, and photoluminescence. It was concluded that in spite of differences in the texturing, morphology and Ga gradient, the electrical performance of the two types of samples is quite similar as demonstrated by the similar J–V behavior, quantum spectral response, and the estimated recombination losses. Copyright © 2014 John Wiley & Sons, Ltd.     

A comparative study of Cd‐ and Zn‐compound buffer layers on Cu(In1−x,Gax)(Sy,Se1−y)2 thin film solar cells

This paper reports a comparative study of Cu(In,Ga)(S,Se)₂ (CIGSSe) thin‐film solar cells with CBD‐CdS, CBD‐ZnS(O,OH) and ALD‐Zn(O,S) buffer layers. Each buffer layer was deposited on CIGSSe absorber layers which were prepared by sulfurization after selenization (SAS) process by Solar Frontier K. K. Cell efficiencies of CBD‐CdS/CIGSSe, CBD‐ZnS(O,OH)/CIGSSe and ALD‐Zn(O,S)/CIGSSe solar cells exceeded 18%, for a cell area of 0.5 cm². The solar cells underwent a heat‐light soaking (HLS) post‐treatment at 170 °C under one‐sun illumination in the air; among the three condtions, the ALD‐Zn(O,S)/CIGSSe solar cells showed the highest cell efficiency of 19.78% with the highest open‐circuit voltage of 0.718 V. Admittance spectroscopy measurements showed a shift of the N₁ defect's energy position toward shallower energy positions for ALD‐Zn(O,S)/CIGSSe solar cells after HLS post‐treatment, which is in good agreement with their higher open‐circuit voltage and smaller interface recombination than that of CBD‐ZnS(O,OH)/CIGSSe solar cells. Copyright © 2015 John Wiley & Sons, Ltd.