Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4/KTP green laser with AO and GaAs saturable absorber

By using both acousto-optic modulator and GaAs saturable absorber, a diode-pumped Q-switched and mode-locked(QML) YVO₄/Nd:YVO₄/KTP green laser is presented. The experimental results show that the doubly QML YVO₄/Nd:YVO₄/KTP green laser has good stability and nearly 100% modulation depth. The average output power and the pulse width of the Q-switched envelope have been measured. The mode-locked pulse inside the Q-switched envelope has a repetition rate of 137 MHz and its pulse width is estimated to be about 280 ps. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML green laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

Enhancement of stability and peak power in a diode-pumped doubly QML YVO4/Nd:YVO4 laser with EO and Cr:YAG saturable absorber

A diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/NdYVO₄ laser is realized with the electro-optic (EO) modulator and Cr⁴⁺:YAG saturable absorber, in which the repetition rate of the Q-switched envelope is controlled by the active EO modulation while the mode-locked pulses inside the Q-switched envelope depend on both the actively modulated loss and the passive saturable absorption. The experimental results show that the doubly QML laser can generate more stable and shorter pulses with higher peak power when compared with the singly passively QML laser with Cr⁴⁺:YAG. At the pump power of 20 W and the repetition rate 1 kHz, a 21 ns Q-switched pulse envelope with a average mode-locked peak power of 544 kW is obtained, which is the shortest Q-switched pulse envelope to my knowledge. In comparison to the singly passively QML laser with Cr⁴⁺:YAG, the doubly QML laser has compressed the Q-switched envelope pulse width 70% and improved the mode-locked pulsed peak power 27 times. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

Diode-pumped efficient laser operation and spectroscopy of Tm,Ho:YVO4

Spectroscopic characterization of co-doped Tm,Ho:YVO₄ crystal grown by the Czochralski method has been performed including absorption spectrum, emitting spectrum and luminescence decay lifetime. The polarization emitting spectrum around 2 μm is accomplished by exciting a singly Ho³⁺ doped YVO₄ crystal to exclude the influence of Tm³⁺³F₄-³H₆ transition and the emission cross section is deduced from both Fuchtbauer-Ladenburg (F-L) equation and reciprocity method (RM). In addition, we report up to 10.4 W continuous wave (CW) output with a conversion efficiency of 40% and 10.3 W Q-Switch output with 12.5 kHz pulse repetition rate of diode-pumped cryogenic Tm,Ho:YVO₄ laser. For Q-Switch operation, the minimum pulse width of 28.2 ns is obtained, all of which demonstrate that the Tm,Ho:YVO₄ is excellent laser material for 2 μm radiation.     

Photoluminescence properties of Nd:YVO4 single crystals by multi-die EFG method

Nd-doped YVO₄ crystal is an excellent material for making the diode-pumped solid lasers. In this study, Nd-doped YVO₄ multi-crystal with high quality was grown simultaneously by developed edge-defined film-fed growth (EFG) method. All crystals appeared homogenous Nd distribution and were found the stable step-faceting phenomena. The up-conversion properties on the Nd:YVO₄ multiple-crystal have been measured by the observations of transmission and photoluminescence (PL) spectra.     

Effect of Calcium on Nd:GdVO4 single crystal

The Ca_0.08Gd_0.92VO₄ crystal and Nd-doped Ca_0.08Gd_0.92VO₄ crystals were grown by the Czochralski method; the lattice parameters of the crystals were determined by XRD. The results showed that substituting Nd³⁺ caused an increase in lattice parameter; the segregation coefficient of Nd³⁺ ions in the crystal is lower than that of Nd:GdVO₄ crystal; the absorption spectra, fluorescence spectra, absorption cross-section and the emission cross-section of the Nd:Ca_0.08Gd_0.92VO₄ crystal were investigated at room temperature; furthermore, the Raman performance of Ca_0.08Gd_0.92VO₄ crystal was improved.     

Mild hydrothermal solid-phase synthesis of YVO4 nanocrystals

The tetragonal YVO₄ nanocrystals are facilely prepared via a hydrothermal solid-phase synthesis method directly utilizing bulk phase materials of V₂O₅ and Y₂O₃ as precursor. Whether additives (acid and EDTA) exist or not, the reaction can be performed in the mild temperature range from 130 to 200 °C. The products are characterized with XRD, FTIR, TEM and PL. The effect of acid and amounts of EDTA on the morphology of the product is investigated. The YVO₄ nanoparticles exhibit novel photoluminescence emission bands at 330 and 606 nm under 254 nm excitation. A growth mechanism of yttrium orthovanadate is proposed.     

EPR and vibrational studies of YVO4:Tm, Yb single crystal

A well oriented YVO₄ single crystal, with 5% Yb³⁺ and 2% Tm³⁺ nominal doping, was investigated using the Raman and EPR techniques.The EPR measurements suggest that Yb³⁺ ions occupy eight-coordinated Y³⁺ sites forming bisdisphenoids of the D_2d symmetry. An inhomogeneous distribution of rare-earth ions leads to a significant distortion of the local point symmetry (C₁). It seems that strong dipole–dipole interactions between Yb³⁺ ions are responsible for the distortion. As a result, two types of ytterbium magnetic centers appear. They correspond to paired magnetic centers and distorted isolated paramagnetic centers that are strongly sensitive to the magnetic field directions and some imperfections of the crystal. Pair centers can be recorded through the rotation around the c-crystal axis, whereas isolated centers can be measured when the crystal is rotated around the a-crystal axis. With the increasing temperature, the ytterbium signal disappeared at about 23 K and a group of narrow lines became visible. These lines, observed in the range of 240–550 mT, correspond to the Gd³⁺ (S = 7/2) ions, doped to the structure unintentionally from the basic materials.     

Photoluminescence of nanocrystalline YVO4:TmxDy1−x prepared by a modified Pechini method

This paper reports the luminescence effects of Tm³⁺ doped YVO₄:Dy nanocrystalline synthesized by a modified Pechini method. The structure and morphology were characterized by using X-ray diffraction (XRD) and transmission electron microscope (TEM). The relationship between the ratio of Tm³⁺/Dy³⁺ and the chromaticity is studied, i.e. Tm³⁺ ion doping effectively tunes the emission color of YVO₄:Tm_xDy_1−x phosphors. The best white light emission was observed with YVO₄:1%(Tm_0.6Dy_0.4). These results indicate that thulium doped YVO₄:Dy phosphors are promising white-emitting luminescence materials.     

Er,Yb:YVO4 waveguides deposited on amorphous SiO2 by PLD and UVPLD

In this work, erbium, and erbium and ytterbium co-doped YVO₄ waveguiding thin films were deposited on amorphous SiO₂ substrates by pulsed laser deposition (PLD) and ultraviolet-assisted pulsed laser deposition (UVPLD). The influence of the deposition technique on the structure, morphology, and optical properties of the films was investigated. At lower dopant concentrations the films prepared by UVPLD show better crystallinity and optical properties. All the samples show preferred orientation of the (001) zone axes parallel to the substrate surface. The polycrystalline samples show difference in the refractive indexes ?n (?n = n_TE − n_TM) for the TE and TM polarizations.     

Influence of Ce on the luminescence properties of Er/Yb:YVO4 crystals

YVO₄ single crystals doped with Ce³⁺, Er³⁺ and Yb³⁺ ions were grown by the Czochralsski technology. The luminescence properties of Er³⁺/Yb³⁺:YVO₄ single crystals with different concentration of Ce³⁺ were studied, and the energy transfer mechanism between Er³⁺, Yb³⁺ and Ce³⁺ was discussed based on their energy level properties. The branching ratios of the ⁴I_11/2 → ⁴I_13/2 transition in different samples were calculated. The results indicate that codopants of Ce³⁺ greatly enhance the population rate of the ⁴I_13/2 level due to the fast resonant energy transfer between Er³⁺ and Ce³⁺, i.e., ⁴I_11/2(Er³⁺) + ²F_7/2(Ce³⁺) → ⁴I_13/2(Er³⁺) + ²F_5/2(Ce³⁺).     

Polarized spectral properties of Tm:K5Bi(MoO4)4 crystal

Trivalent thulium-doped K₅Bi(MoO₄)₄ single crystals were grown by the Czochralski method. Its polarized absorption and fluorescence spectra and fluorescence decay curves were recorded at room temperature. On the basis of the Judd-Ofelt theory, the spectral parameters of the Tm³⁺:K₅Bi(MoO₄)₄ crystal were calculated. The cross relaxations between Tm³⁺ ions were analyzed. The emission cross sections of the ³F₄ → ³H₆ transition were obtained by the Fuchtbauer-Ladenburg formula and then the gain cross sections around 1.9 μm were calculated. The peak emission cross section and width of emission band around 1.9 μm are comparable to those for Tm³⁺:YAG and the tunable range is about 280 nm for the potential ∼1.9 μm laser operation via the ³F₄ → ³H₆ transition.     

Annealing behavior of single mode planar waveguide in YVO4 produced by He ion implantation

We report, for the first time to our knowledge, the formation of single mode planar waveguide in z-cut YVO₄ by 400 keV, 500 keV He ion implantation in fluence of 3 × 10¹⁶ ions/cm² at room temperature or at liquid nitrogen temperature (77 K). We investigated annealing behavior of the guiding mode and near-field image in the waveguide by prism-coupling method and end-face coupling method respectively. We found that the effective refractive index of the TE₀ mode was different before and after annealing for the samples implanted at room temperature, while, annealing had nearly no influence on the effective refractive index of the TE₀ mode of the samples implanted at liquid nitrogen temperature (77 K). After annealing at 600 K for 1 h, no guiding mode was observed in the sample implanted by 400 keV He ion in fluence of 3 × 10¹⁶ ions/cm² at room temperature. The Rutherford backscattering/channeling technique was used to investigate the damage reduction after annealing treatments. The minimum yield of the implanted, annealed sample was 5.43%. We reconstructed the refractive index profiles in the waveguide under different condition by applying intensity calculation method.     

Growth and spectral properties of Cr:KAl(MoO4)2 crystal

The Cr³⁺:KAl(MoO₄)₂ single crystal was grown by top seeding solution growth method (TSSG). Based on the absorption and emission spectra, the crystal field strength Dq, the Racah parameters B and C, the effective phonon energy ?ω and the Huang-Rhys factor S were calculated: Dq = 1494.8 cm^− 1, B = 585.5 cm^− 1 and C = 3049 cm^− 1, ?ω = 373.8 cm^− 1 and the Huang-Rhys factor S = 3.74, respectively. The value Dq/B = 2.55 indicates that Cr³⁺ ion occupies the strong crystal field site in KAl(MoO₄)₂ crystal. A comparison of crystal field parameters for Cr³⁺:KAl(MoO₄)₂ with other Cr³⁺-doped crystals was presented. The results of spectral measurement show that Cr³⁺:KAl(MoO₄)₂ may be a potential candidate for broadband laser applications.     

Growth and spectral properties of Er:NaGd(WO4)2 crystal

A high optical quality Er³⁺-doped NaGd(WO₄)₂ single crystal with dimensions of ∅18 × 50 mm³ has been grown using the Czochralski method. The structure of the grown crystal was proved by X-ray powder diffraction. The accurate concentration of Er³⁺ ion in the crystal was measured. The absorption spectra, fluorescence spectra and fluorescence lifetime of the crystal were measured at room temperature. Green up-conversion luminescence has been observed when the crystal is excited at 965 nm.     

Polarized spectroscopic properties of Ho ions in NaLa(MoO4)2 crystal

A Ho³⁺-doped NaLa(MoO₄)₂ single crystal was grown by the Czochralski method. The polarized absorption spectra, polarized fluorescence spectra, and fluorescence decay curves of the crystal were measured at room temperature. The spontaneous emission probabilities, radiative lifetimes, and fluorescence branching ratios of the typical fluorescence multiplets of Ho³⁺ ions were calculated. The polarized stimulated emission and gain cross-sections of the ⁵I₇ → ⁵I₈ transition were obtained. The results show that the Ho³⁺:NaLa(MoO₄)₂ crystal is a promising gain medium for tunable and ultrashort pulse lasers operating around 2.0 μm.     

First-principles study on electronic structure and absorption spectra for the CaWO4 crystal with oxygen vacancy

The electronic structure and absorption spectra for the perfect CaWO₄ and the CaWO₄ containing oxygen vacancy have been calculated using density functional theory code CASTEP with the lattice structure being optimized. The results indicate that the CaWO₄ crystal containing , an additional absorption spectrum in the region of visible light. And the absorption spectrum can be fit into two Gaussian-shape absorption spectra with peaks at 360 and 415 nm. These peaks are located at the experimentally observed position. It is predicted that the 340 and the 420 nm absorption spectra are related to the existence of in the CaWO₄ crystal.     

Wet chemical preparation of YVO4:Eu thin films as red-emitting phosphor layers for fully transparent flat dielectric discharge lamp

Highly transparent YVO₄:Eu thin films were deposited via dip coating of liquid nanoparticle dispersions on glass substrates. Annealing of the nanoparticle layers resulted in restructuring of the material into oriented crystalline films. The crystallinity was confirmed using powder X-ray diffraction. Film thickness was adjusted to 467 nm by multiple deposition. The resulting coatings show > 99% absorbance for wavelength below 300 nm and > 90% transmission in the visible spectral range. Under UV-light excitation a bright red photoluminescence with a quantum efficiency of 20% is observed. A planar, transparent dielectric barrier discharge lamp was constructed using YVO₄:Eu coated glasses and transparent electrodes made from antimony-doped tin dioxide thin films.     

Diode-end-pumped passively Q-switched 1.34 μm Nd:Gd0.5Y0.5VO4 laser with Co:LMA saturable absorber

In this paper, the output performances at 1.34 μm in continuous wave operation and passive Q-switching regime of a diode-end-pumped Nd:Gd_0.5Y_0.5VO₄ laser have been investigated. The passive Q-switching regime was achieved with Co²⁺:LaMgAl₁₁O₁₉ (Co²⁺:LMA) saturable absorbers crystals. A maximum average output power of 230 mW was recorded with a Co²⁺:LMA with initial transmission of 81%. The minimum pulse duration was 116 ns, which corresponded to a repetition rate of 360 kHz, the single pulse energy of 2.1 μJ and the pulse peak power of 5.5 W.     

Thermal and mechanical properties of novel substrate crystal Mg0.4Al2.4O4

Mg_0.4Al_2.4O₄ single crystal was grown by the Czochralski method. The measured specific heat values are 0.804-1.06 J g^− 1 K^− 1 in the temperature range from 298.15 to 573.15 K. The calculated thermal conductivity components are 11.37, 11.47 and 10.77 W m^− 1 K^− 1 along the [111], [004] and [22?0] direction at 298.15 K. The Vickers microhardness values are 1328-1414 kg mm^− 2. These experimental results show that Mg_0.4Al_2.4O₄ crystal is a promising substrate for GaN-based LEDs.     

Spectra and broad-spectral laser operation of a disordered Nd:LiLa(MoO4)2 crystal

The crystal characteristics of a disordered Nd:LiLa(MoO₄)₂ laser crystal were investigated in detail, including its structure, absorption, emission and Raman scattering spectra. Laser operation, end-pumped by an 808?nm diode laser, has been demonstrated in both a concave-plano and plane-parallel resonator cavity. A broad-spectral dual-peak laser emission at 1061?nm and 1060?nm with a full width at half maximum of 2?nm was obtained in the experiment. A maximum output power of 267?mW was obtained in the concave-plano cavity. However, in the plane-parallel cavity, laser output of 381?mW was obtained, giving a slope efficiency of 14.5%. The results lay the groundwork for Raman, mode-locked and tunable laser applications generated by a Nd:LiLa(MoO₄)₂ laser crystal.