Frequency and temperature dependence of dielectric and electrical properties of radio-frequency sputtered lead-free K0.48Na0.52NbO3 thin films

Lead-free K_0.48Na_0.52NbO₃ (KNN) ferroelectric thin films were prepared using the radio-frequency magnetron sputtering method. The crystallized KNN phase was confirmed using X-ray diffraction. The KNN thin film exhibited a well-saturated ferroelectric polarization-electric field hysteresis loop with high remanent polarization. The dielectric and electrical properties of the KNN thin film were investigated over a wide range of frequencies from 10 Hz to 1 MHz, and over a wide range of temperatures from 25 °C to 500 °C. The complex impedance relaxations are shown in an impedance Cole-Cole plot. With increasing temperature, the AC conductivity increased, which obeys the power law, σ(ω) = σ₀ + Aω^s. The activation energy for the conduction process is calculated to be 0.57 eV from the slope of the AC conductivity at the low frequency.     

Effect of Na/K excess on the electrical properties of Na0.5Bi0.5TiO3-K0.5Bi0.5TiO3 thin films prepared by sol-gel processing

(Na_0.85K_0.15)_0.5Bi_0.5TiO₃ (NKBT) thin films derived from different amounts of Na/K excess content were fabricated via an aqueous sol-gel method on a Pt(111)/Ti/SiO₂/Si substrate, and the effect of Na/K excess content on the microstructure and electrical properties of the NKBT thin films was investigated. A second phase appears when Na/K excess content is below 20 mol%. Appropriated Na/K excess can enhance the polarization and dielectric properties due to compensation of Na/K loss that occurred during heat treatment. The 20 mol% excess derived NKBT thin film exhibits the best ferroelectric and dielectric properties with a remnant polarization (Pr) of 13.6 μC/cm², and a coercive field (Ec) of 104.8 KV/cm, together with a dielectric constant of 406 and a dissipation factor of 0.064. Similar to the dielectric response change with Na/K excess content, the decreasing concentration of charged defects is the main reason resulting in the increase of the piezoelectric property. The film with a 20 mol% excess content exhibited an effective d₃₃^? of about 56 pm/V. Also, the NKBT with a 20 mol% excess content exhibits the lowest current density of 5.6 × 10^− 5 A/cm² at 10 V.     

V-doping effects on ferroelectric properties of K0.5Bi4.5Ti4O15 thin films

V-doped K_0.5Bi_4.5Ti₄O₁₅ (K_0.5Bi_{4.5 − x/3}Ti_4 − xV_xO₁₅, KBTiV-x, x = 0.00, 0.01, 0.03, and 0.05) thin films were prepared on a Pt(111)/Ti/SiO₂/Si(100) substrate by a chemical solution deposition method. The thin films were annealed by using a rapid thermal annealing process at 750 °C for 3 min in an oxygen atmosphere. Among them, KBTiV-0.03 thin film exhibited the most outstanding electrical properties. The value of remnant polarization (2P_r) was 75 μC/cm² at an applied electric field of 366 kV/cm. The leakage current density of the thin film capacitor was 5.01 × 10⁻⁸ at 100 kV/cm, which is approximately one order of magnitude lower than that of pure K_0.5Bi_4.5Ti₄O₁₅ thin film capacitor. We found that V doping is an effective method for improving the ferroelectric properties of K_0.5Bi_4.5Ti₄O₁₅ thin film.     

Giant strain in Nb-doped Bi0.5(Na0.82K0.18)0.5TiO3 lead-free electromechanical ceramics

The effect of Nb substitution on the crystal structure, ferroelectric, and electric field induced strain properties of Bi_0.5(Na₈₂K_0.18)_0.5TiO₃ (BNKT) ceramics has been investigated. The coexistence of rhombohedral and tetragonal phases was found in undoped BNKT ceramics, however, Nb doping induced a phase transition to a pseudocubic phase with high electrostriction coefficients. When 3 mol% Nb was substituted on Ti ions, the electric field induced strain was markedly enhanced up to S_max/E_max = 641 pm/V, which is higher than those previously reported on non-textured lead-free electromechanical ceramics.     

Variations of microstructures and electrical properties of Bi4Ti3O12/SrTiO3/(La0.5, Sr0.5)CoO3/MgO epitaxial thin films by annealing

Epitaxial thin films of a heterostructure with Bi₄Ti₃O₁₂(BIT)/SrTiO₃(ST) were successfully grown with a bottom electrode consisting of La_0.5Sr_0.5CoO₃(LSCO) on MgO(001) substrates using pulsed laser deposition. The grown BIT and ST (001) planes were parallel to the growth surface with the orientation relationship of BIT <110>//ST <010>. In the as-deposited film, the BIT (001) plane appeared to expand to relieve a lattice mismatch with the ST (001) plane. However, annealing for 20-40 min induced the BIT (001) plane to contract horizontally with its c-axis expanding, which was associated with a local perturbation in the layer stacking of the BIT structure. This structural distortion was reduced in the film annealed for 1 h, with restoration of the periodicity of the layer stacking. Correspondingly, the dielectric constant of the as-deposited film was increased from 292 to 411 by annealing for 1 h. In parallel, the film was paraelectric but became more ferroelectric, with the remanent polarization and the coercive field changing from 0.1 μC/cm² and 14 kV/cm to 1.7 μC/cm² and 69 kV/cm, respectively.     

Properties of La-substituted Na0.5Bi4.5Ti4O15 ferroelectric thin films

Ferroelectric Na_0.5La_0.5Bi₄Ti₄O₁₅ (NaLaBTi) thin films were prepared by a chemical solution deposition method. The NaLaBTi thin films annealed at 750 °C under oxygen atmosphere were randomly oriented polycrystalline. Electrical properties of the NaLaBTi thin films were compared to Na_0.5Bi_4.5Ti₄O₁₅ thin films and better properties were observed in the NaLaBTi thin films. Remnant polarization (2P_r) and coercive electric field (2E_c) were 43 µC/cm² and 204 kV/cm at an applied electric field of 478 kV/cm, respectively. Leakage current density was 1.95 × 10^− 6 A/cm² at 100 kV/cm. Dielectric constant and dielectric loss were 805 and 0.05 at 1 kHz, respectively. Switchable polarization was suppressed by 15% after 1.44 × 10¹⁰ switching cycles.     

Enhanced ferroelectric properties of Pb(Zr0.80Ti0.20)O3/PbO thin films prepared by radio frequency magnetron sputtering

The Pb(Zr_0.80Ti_0.20)O₃ (PZT) thin films with and without a PbO buffer layer were deposited on the Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by radio frequency (rf) magnetron sputtering method. The PbO buffer layer improves the microstructure and electrical properties of the PZT thin films. High phase purity and good microstructure of the PZT thin films with a PbO buffer layer were obtained. The effect of the PbO buffer layer on the ferroelectric properties of the PZT thin films was also investigated. The PZT thin films with a PbO buffer layer possess better ferroelectric properties with higher remnant polarization (P_r = 25.6 μC/cm²), and lower coercive field (E_c = 60.5 kV/cm) than that of the films without a PbO buffer layer (P_r = 9.4 μC/cm², E_c = 101.3 kV/cm). Enhanced ferroelectric properties of the PZT thin films with a PbO buffer layer is attributed to high phase purity and good microstructure.     

The synthesis of lead-free ferroelectric Bi0.5Na0.5TiO3-Bi0.5K0.5TiO3 thin films by sol-gel method

(1 − x)Bi_0.5Na_0.5TiO₃-xBi_0.5K_0.5TiO₃ [BNT-BKT-100x] thin films have been successfully deposited on Pt/Ti/SiO₂/Si substrates by a sol-gel process together with rapid thermal annealing. A morphotropic phase boundary (MPB) between Bi_0.5Na_0.5TiO₃ and Bi_0.5K_0.5TiO₃ was determined around x ∼ 0.15. Near the MPB, the film exhibits the largest grain size, the highest ε value (360) and the largest P_r value (13.8 μC/cm²). The BNT-BKT thin film system is expected to be a new and promising candidate for lead-free piezoelectric applications.     

Sputter-epitaxy and electric properties of multiferroic Bim + 1Fem-3Ti3O3m + 3 thin films

Growth conditions suitable for sputter-epitaxy of Bi_m + 1Fe_m-3Ti₃O_3m + 3 (BFTO) thin films with layered structure have been investigated. The amount of oxygen during deposition was found to be specifically essential for obtaining a good-quality thin film of BFTO with a large m. The (001) epitaxial thin films of BFTO with m of nearly 10 which is expected to retain magnetic order up to room temperature have been successfully grown on (001) SrTiO₃ substrates under the determined optimum condition. The film exhibited leakage current as low as order of 10⁻²-10⁻¹ A/m² limited by Schottky emission at the interfaces between the electrodes and the film. In addition, the film showed a ferroelectric polarization curve with Pr = 6 μC/cm² for applied field of 35 MV/m at room temperature though the curve was unsaturated. These indicate that the BFTO (m = 10) thin films are promising as multiferroics at room temperature.     

The influence of annealing temperatures on the properties of Bi2VO5.5/LaNiO3/Si thin films

Bi₂VO_5.5 ferroelectric thin films were fabricated on LaNiO₃/Si(100) substrate via chemical solution deposition. Ferroelectric and dielectric properties of the thin films annealed at 500-700 °C were studied. The thin film annealed at 700 °C exhibited more favorable ferroelectric and dielectric properties than those annealed at lower temperatures. The values of remnant polarization 2P_r and coercive field E_c for the film annealed at 700 °C are 10.62 µC/cm² and 106.3 kV/cm, respectively. The leakage current of the film is about 1.92 × 10^− 8 A/cm² at 6 V. The possible mechanism of the dependence of electrical properties of the films on the annealing temperature was discussed.     

Effect of doping with Nd ions on the structural and ferroelectric properties of Ca0.28Ba0.72Nb2O6 single crystal

The crystal structure of Ca_0.28Ba_0.72Nb₂O₆ (CBN-28) crystal with Nd-doping has been determined from X-ray single crystal diffraction data, in the tetragonal system with space group P4bm and the following parameters: a = b = 12.458 Å, c = 3.954 Å, V = 613.688 Å³, and Z = 5. X-ray diffraction results on a Nd-doped CBN-28 single crystal also have demonstrated that Nd³⁺ and Ca²⁺ occupy the same site in the crystal structure. Dielectric and ferroelectric measurements have been performed. Transition from ferroelectric to paraelectric at around 223 °C has been observed. The Nd-doped crystal has a lower Curie temperature (T_m) than that of undoped CBN-28 crystal. The spontaneous polarization (P_s) and coercive electric field (E_c) also decrease compared with their values in the undoped CBN-28 crystal.     

Self-patterned Nano Structures in Structurally Gradient Epitaxial La0.5Ba0.5CoO3 Films

Highly epitaxial La_0.5Ba_0.5CoO₃ (LBCO) thin films with sharp interface and a thickness of 200 nm were epitaxially grown on (001) SrTiO₃ substrates using pulsed laser deposition. High-resolution transmission electron microscopy and electron diffraction analysis revealed that the films have a triple-layered structure. The first layer, close to the film/substrate interface, has a thickness of ~ 6 nm and is a defect free single crystal disordered cubic structure (a = 3.882 Å) which has a lattice mismatch of − 0.59% with respect to the substrate. The second layer which dominates the film structure has a single crystal disordered cubic structure (a = 3.854 Å) which has a lattice mismatch of − 1.31% with respect to the substrate. The third layer located on the top of the film has a thickness of several nanometers and consists of 112-type ordered tetragonal structure. The cubic structures in the first and second layer have an orientation relationship of (001)_LBCO//(001)_STO and < 100 > _LBCO//< 100 > _STO with respect to the substrate. Self-patterned 3-dimensional nano structures with a dimension range from 2 to 10 nm were formed in the second and third layers. These nano structures were formed by the enclosure of anti-phase boundary planes which are parallel to the {100} of the cubic structure. Epitaxial LBCO thin films with such nano structures are hard ferromagnetic with a large coercive field value and magnetoresistance effect value (~ 24%), and exhibit semiconductor behavior at temperatures < 300 K.     

Structural and electrical characterizations of Bi(Zn0.5Ti0.5)O3 doped lead zirconate titanate ferroelectric films with enhanced ferroelectric properties

Bi(Zn_0.5,Ti_0.5)O₃ (BZT) doped Pb(Zr_0.4,Ti_0.6)O₃ (PZT) films were fabricated using a chemical solution deposition method and were characterized intensively in the present work. It was discovered that the room temperature remnant polarization and zero-field longitudinal piezoelectric constant of the BZT-doped PZT film were enhanced by 23% and 30%, respectively, as compared with those of the undoped PZT film prepared under the same experiment conditions. In order to explain the improved ferroelectric properties, the phase structures of the BZT-PZT and undoped PZT films were experimentally investigated in a broad temperature range (from 30 to 600 °C) by using the high temperature two-dimensional X-ray diffraction method. It was found that the improvement in ferroelectricity does not correspond to an elevated Curie temperature (T_C) or a substantially larger tetragonality (c/a). The difference on the change of T_C by doping of Bi-based perovskites in PZT solid solutions between this work and some previous investigations was explained on the basis of Zr/Ti ratio, and the necessity of an in-depth theoretical investigation was addressed.     

Improved dielectric and ferroelectric properties in Ti-doped BiFeO3-PbTiO3 thin films prepared by pulsed laser deposition

Ti-modified thin films of multiferroic 0.72Bi(Fe_1 − xTi_x)O₃-0.28PbTiO₃ (BFPT, x = 0 and 0.02) solid solution were prepared by pulsed laser deposition. The BFPT (x = 0 and 0.02) films possess a tetragonal structure with highly preferential (001) orientation. The effects of the ionic substitution on the properties of BFPT (x = 0 and 0.02) films have been investigated. The leakage current of the BFPT (x = 0.02) thin film is significantly reduced, and the dielectric and ferroelectric properties greatly improved by the aliovalent ionic substitution of Ti⁴⁺ for Fe³⁺. The BFPT (x = 0.02) thin film exhibits a reasonably high remnant polarization P_r with 2P_r up to 90 μC/cm² at 312 kV/cm and a switchable polarization up to 92 μC/cm² at 417 kV/cm.     

Microstructure and electric properties of (104)/(014)-oriented Bi3.15Nd0.85Ti3O12 films on Pt (111)/Ti/SiO2/Si by sol-gel method

Bi_3.15Nd_0.85Ti₃O₁₂ (BNdT) thin films with predominant (104)/(014) orientation were fabricated directly on (111)Pt/Ti/SiO₂/Si substrates through a sol-gel process. The volume fraction of (104)/(014)-oriented grains in the film was estimated to be about 65% according to X-ray pole figure. The BNdT film is dense and uniform and consists of columnar grains penetrating the whole film thickness. The (104)/(014)-oriented BNdT film capacitors showed excellent ferroelectric properties with 2P_r = 46.4 μC/cm² and E_c ≈ 140 kV/cm. The films also exhibit excellent piezoelectric property, with high piezoelectric coefficient d₃₃ ≈ 17 pm/V.     

Impedance spectroscopy and relaxation phenomena of (Na,K) excess Na0.5K0.5NbO3 thin films grown by chemical solution deposition

Na_0.5K_0.5NbO₃ (NKN) and 10 mol% (Na,K) excess Na_0.5K_0.5NbO₃ (NKN10) thin films on Pt/Ti/SiO₂/Si substrate were prepared by chemical solution deposition. Crystallization of NKN10 thin films was confirmed by X-ray diffraction. The (Na,K) excess Na_0.5K_0.5NbO₃ thin film shows a ferroelectric P-E hysteresis loop. Dielectric properties and impedance spectroscopy of thin films were investigated in the frequency range from 0.1 Hz to 100 kHz and the temperature range of 25 ~ 500 °C. By analyzing the complex impedance relaxation with Cole-Cole plots, we found impedance relaxations for the thin film. The contribution of electrical conduction is discussed in relation to grain, grain boundary, and interface effects.     

Epitaxial growth and thermoelectric properties of TiNiSn and Zr0.5Hf0.5NiSn thin films

Due to their exceptional thermoelectric properties Half-Heusler alloys like MNiSn (M = Ti,Zr,Hf) have moved into focus. The growth of single crystalline thin film TiNiSn and Zr_0.5Hf_0.5NiSn by dc magnetron sputtering is reported. Seebeck and resistivity measurements were performed and their dependence on epitaxial quality is shown. Seebeck coefficient, specific resistivity and power factor for Zr_0.5Hf_0.5NiSn at room temperature were measured to be 63 μV K^− 1, 14.1 μΩ m and 0.28 mW K^− 2 m^− 1, respectively. Multilayers of TiNiSn and Zr_0.5Hf_0.5NiSn are promising candidates to increase the thermoelectric figure-of-merit by decreasing thermal conductivity perpendicular to the interfaces. The epitaxial growth of multilayers containing TiNiSn and Zr_0.5Hf_0.5NiSn is demonstrated by measuring satellite peaks in the X-ray diffraction pattern originating from the additional symmetry perpendicular to the film surface.     

Ferroelectric properties of lithia-doped (Bi0.95Na0.75K0.20)0.5Ba0.05TiO3 ceramics

Lead-free piezoelectric (Bi_0.95Na_0.75K_0.20−xLi_x)_0.5Ba_0.05TiO₃ ceramics have been prepared by conventional process for different lithium substitutions. The SEM images show that the ceramics are well sintered at 1428 K. Dielectric and ferroelectric measurements have been performed. With the increasing of lithium substitution, the Curie temperature of the (Bi_0.95Na_0.75K_0.20−xLi_x)_0.5Ba_0.05TiO₃ ceramics shifts from 570 K to 620 K, but the maximum value of the dielectric constant decreases from 6700 to 4700 correspondingly. A relatively larger remanent polarization of 36.8 μC/cm² has been found in the x = 0.05 sample. The coercive field decreases as the lithium substitution amount increases. An optimized d₃₃ = 194 × 10^− 12 C/N and a relative dielectric constant ε_r = 1510 have been obtained in (Bi_0.95Na_0.75K_0.15Li_0.05)_0.5Ba_0.05TiO₃.     

Leakage current characteristics of Bi3.15Nd0.85Ti3 − xZrxO12 thin films

Thin films of Bi_3.15Nd_0.85Ti₃O₁₂ (BNT) and Bi_3.15Nd_0.85Ti_3 − xZr_xO₁₂ (BNTZ_x, x = 0.1 and 0.2) were fabricated on Pt/TiO₂/SiO₂/Si(100) substrates by a chemical solution deposition (CSD) technique at 700 °C. Structures, surface morphologies, leakage current characteristics and Curie temperature of the films were studied as a function of Zr ion content by X-ray diffraction, atomic force microscopy, ferroelectric test system and thermal analysis, respectively. Experimental results indicate that Zr ion substitution in the BNT film markedly decreases the leakage current of the film, while almost not changing the Curie temperature of the film, which is at about 420-460 °C. The decrease of the leakage current in BNTZ_x films is that the conduction by the electron hopping between Ti⁴⁺ and Ti³⁺ ions is depressed because Zr⁴⁺ ions can block the path between two adjacent Ti ions and enlarge hopping distance.     

Enhanced multiferroic properties and tunable magnetic behavior in multiferroic BiFeO3-Bi0.5Na0.5TiO3 solid solutions

A series of multiferroic (1−x)BiFeO₃−x(Bi_0.5Na_0.5)TiO₃ (BF-BNT) (x = 0 − 0.6) solid solution ceramics were prepared by a sol-gel method. The XRD results show that increasing BNT content induce a gradual phase transformation from rhombohedral to pseudocubic structure near x = 0.4. Compared with pure BiFeO₃, superior multiferroic properties are obtained for x = 0.3 with remnant polarization P_r = 1.49 μC/cm² and saturated magnetization M_s = 0.51 emu/g. Importantly, the paramagnetic (PM) to ferromagnetic (FM) transition is observed for the solutions, and the Curie temperature (T_C) can be tuned by varying the content of BNT. This observed FM ordering is discussed in terms of the possible existence of the long-range superexchange interaction of Fe³⁺-O-Ti-O-Fe³⁺ in the chemically ordered regions.