基于单片机和FPGA的埋弧焊机控制系统

提出了一种基于单片机和FPGA的双机控制系统,实现了埋孤焊机的数字化.采用单片机作为埋弧焊机的数据采集和逻辑处理,实现了参数的预置、开关量的选择、焊接过程参数显示及各种故障状态的检测等.采用FPGA作为电机控制单元,实现了送丝电机和行车电机的运动控制,基于本控制系统的埋弧焊机,已经实现了批量化生产,实际应用结果证明了本控制系统的有效性.     

基于PC与ATmega128单片机的室内服务机器人控制系统设计

为了实现PC机对机器人的无线控制功能,以一个具有四自由度机械手的服务机器人为例,设计该服务机器人的控制系统,实现计算机与单片机间的无线通信,从而可以通过计算机控制机器人.详细介绍该室内服务机器人控制系统的硬件设计和软件实现的全过程.以ATmega128单片机作为控制核心,PC控制软件可以通过无线通信模块对机器人进行控制,扩展了机器人的服务功能.在Codevision AVR环境下采用C语言编程实现;同时,采用Visual C+ +6.0编写一个数据帧接收程序,完成PC机与单片机之间的通信.     

仿水黾机器人控制系统的研究与开发

研究一种利用昆虫水黾的划动机理来推进机器人在水上运动的仿水黾机器人的控制系统,其采用单片机为核心控制器,控制3个微小型电磁铁分别驱动机器人两单腿并联双滑块驱动机构,实现机器人的运动控制.进行了机器人控制思想研究和控制系统软、硬件开发,并在实验室环境下对水上行走机器人样机性能进行了实验研究,实验结果表明,设计的仿水黾机器人可以很好地实现在水面上前进、转弯等运动.     

两种滤波算法在液压数据采集系统中的应用与研究

本文介绍了大型船舶液压平台的数据采集和控制系统构成,针对其恶劣工作环境采取两种数字滤波方法进行抗干扰,以保证采集数据的可靠性和稳定性。本文详细讨论数据采集的两种数字滤波算法,即平均值滤波和自适应滤波,经过试验得到了良好的效果。     

基于单片机的智能轮椅控制系统设计

智能轮椅控制系统以8位51系列单片机SST89E564RD为核心控制器,运用单片机自身携带的不占CPU时间的PWM脉冲输出对轮椅电机进行转向和速度调节;采用易于操作的摇杆来控制轮椅前进、后退、转弯;运用了语音控制(包括语音识别与语音回放),使得该控制系统更具人性化,简单语句的语音识别率在20～30dB噪声环境下可达95%,单句语音回放时间可长达1min;运用超声波传感器实现轮椅的自动避障,提高了轮椅的安全性能.     

基于PC机和80C196单片机的温度微机控制系统

文章介绍了由PC机和80C196单片机构成的热处理温度微机控制系统,并就集中温度数据采集方法、PC机和单片机的数据通信格式、单片机软硬件设计、双向晶闸管的触发电路等相关技术进行了分析,给出了串行通信中断接收及数据处理程序设计流程图.     

基于Proteus软件的数字式等离子切割机控制系统的设计与仿真

介绍了Proteus软件的特点、功能及在焊割设备中应用以进行嵌入式数字化控制系统设计与仿真的实现方法.在Proteus环境下结合Keil工具,对基于AT89S51单片机控制的逆变空气等离子切割机的控制系统进行了电路设计、程序开发与仿真调试.结果表明,所设计系统能够完成准确的功能模拟并实现空气等离子切割机的整体控制.该方法可以提高开发效率、缩短周期和降低成本,为数字式控制系统的开发提供了手段.     

虚拟圆度误差测量仪的研制

介绍了虚拟圆度误差测量仪的构成、单片机数据采集电路及PC机数据处理软件。采用AT89C55单片机、光电编码器、电感式位移传感器和A／D转换芯片CS5522组成的数据采集电路实现了数据的自动采集;然后在Windows环境下,采用VB6设计数据处理软件。该测量仪将形位误差测量技术与虚拟仪器技术相结合,解决了圆度误差的测量问题,并且将圆度误差图形在屏幕上形象、直观地显示出来。整个系统性能稳定,测量精度高。     

砂型铸造中树脂砂高温性能检测系统研究

为了有效分析砂型铸造中树脂砂的各项高温参数,设计了一种树脂砂高温性能检测系统。该系统采用C8051F350单片机对压力传感器和电磁阀进行实时数据采集和控制。上位机通过串口模块与单片机进行数据通信。在Eclipse环境下采用JAVA语言对系统的界面和数据处理功能进行了具体实现。结果表明,提出的树脂砂高温性能检测系统运行良好、稳定,对提高砂型铸造生产工艺和铸件质量具有较好的指导意义。     

纤维缠绕计算机张力控制系统的设计

纤维缠绕中张力的控制是保证产品质量的重要因素.介绍了在VB编程环境下,基于数据采集卡设计张力控制系统软件的基本方法,并给出了控制系统的硬件构成.阐述了多通道信号采集、数字滤波以及利用ACCESS数据库保存数据的基本原理.     

基于现场总线的液压智能仪表的设计

文章对ADuC812和MCP2510的结构特性进行了分析。从硬件电路、软件结构方面提出了具有CAN总线的应用于液压系统的压力、流量、温度信号测量的智能仪表的设计方案。     

Advancement of In-Flight Alumina Powder Spheroidization Process with Water Droplet Injection Using a Small Power DC-RF Hybrid Plasma Flow System

The correlation between plasma thermofluid characteristics and alumina powder spheroidization processes with water droplet injection using a small power DC-RF hybrid plasma flow system was experimentally clarified. Micro-sized water droplets with a low water flow rate were injected into the tail of thermal plasma flow so as not to disturb the plasma flow directly. Injected water droplets were vaporized in the thermal plasma flow and were transported upstream in the plasma flow to the torch by the backflow. After dissociation of water, the production of hydrogen was detected by the optical emission spectroscopy in the downstream RF plasma flow. The emission area of the DC plasma jet expanded and elongated in the vicinity of the RF coils. Additionally, the emission area of RF plasma flow enlarged and was visible as red emission in the downstream RF plasma flow in the vicinity below the RF coils due to hydrogen production. Therefore, the plasma flow mixed with produced hydrogen increased the plasma enthalpy and the highest spheroidization rate of 97% was obtained at a water flow rate of 15?Sml/min and an atomizing gas flow rate of 8?Sl/min using a small power DC-RF hybrid plasma flow system.     

旁路耦合微束等离子弧增材制造自适应高度控制系统

在xPC Target实时目标环境下,采用旁路耦合微束等离子弧进行增材堆垛试验,探究最大临界送丝速度、焊炬悬空高度和总电压等过程参数之间的关系.通过数据分析得到了送丝速度与总电压的回归模型,进一步在xPC Target系统中创建变送丝和电压反馈相结合的自适应高度调节控制模型,搭建了基于自适应高度调节的旁路耦合微束等离子弧增材制造控制系统,进行了在台阶形基板上的堆垛成形试验和单墙体零件自适应堆垛试验.结果表明,该控制系统能提高增材制造过程的稳定性;优化堆垛高度方向上的成形路径设计;实现复杂形状基板上金属零件的堆垛成形.     

Zinc oxide (ZnO) grown on flexible substrate using dual-plasma-enhanced metalorganic vapor deposition (DPEMOCVD)

This study investigates the temperature dependence of zinc oxide (ZnO) grown on polyestersulfone (PES) flexible substrates using the dual plasma-enhanced metal–organic chemical vapor deposition (DPEMOCVD) system. The proposed method uses a direct voltage (DC) and radio-frequency (RF) plasma system. The group-VI precursor, oxygen (O₂), can be completely ionized by the DC plasma system. The effect of optimal DC plasma power on ZnO thin films is thoroughly investigated using X-ray diffraction (XRD). The experimental results indicate that the crystalline structure and optical and electrical properties of ZnO thin films grown on PES substrates are dependent on the deposition temperature. The optimum deposition temperature for ZnO thin films deposited on PES substrates is 185 °C, whereas the DC and RF plasma power is 1.8 W and 350 W, respectively. Additionally, the wettability characteristic regarding the UV irradiation time was assessed by measuring the water contact angle. Under the UV irradiation for 60 min, the ZnO film grown at 185 °C represents a low contact angle of 5°, which approaches to a superhydrophilic surface.     

A novel 300 kW arc plasma inverter system based on hierarchical controlled building block structure

To date, the high power arc plasma technology is widely used. A next generation high power arc plasma system based on building block structure is presented. The whole arc plasma inverter system is composed of 12 paralleled units to increase the system output capability. The hierarchical control system is adopted to improve the reliability and flexibility of the high power arc plasma inverter. To ensure the reliable turn on and off of the IGBT module in each building block unit, a special pulse drive circuit is designed by using pulse transformer. The experimental result indicates that the high power arc plasma inverter system can transfer 300 kW arc plasma energy reliably with high efficiency.     

Enhancement of aluminum oxide physical vapor deposition with a secondary plasma

Reactive sputtering of aluminum oxide in a planar magnetron system is conducted with a mixture of O₂ and Ar reacting with and bombarding an aluminum target. The aluminum target is powered by a pulsed directed current (DC) bias which functions to discharge the accumulated ions on the insulating AlO_x film surface during the positive duty cycle and suppresses arc formation. A seven-turn helical antenna sits below the magnetron sputtering system in the vacuum system and delivers radio-frequency (RF) power to generate a secondary plasma in the chamber. This plasma can efficiently ionize the sputtered flux, achieving ionized physical vapor deposition (IPVD). A gridded energy analyzer (GEA) and a quartz crystal microbalance (QCM) are located in the substrate plane to allow the ion and neutral deposition rates to be determined. Electron temperature and electron density are measured by a RF compensated Langmuir probe. A RF power of 500 W significantly increases the deposition rate of AlO_x up to half of the Al deposition rate in metallic mode at the total pressure of 1.33 Pa (10 mtorr). At 3.33 Pa (25 mtorr), the ionization fraction of Al atoms reaches 90%. In addition the RF power extends the range of O₂ partial pressure in which the sputtering occurs in the metallic mode. SEM photos show that the secondary RF plasma makes the films smoother and denser due to a moderate level of ion bombardment. The deposition rates and ionization fractions fluctuate as a function of O₂ partial pressure. These variations can be explained by the combined variation of sputtering at the target, electron temperature and electron density.     

PID apparatus and technology at KERI

The paper outlooks development of plasma immersion ion implantation and deposition (PI³D) hardware and process at Korea Electrotechnology Research Institute (KERI), and discuss some issues of the technology. Taking into account implications of modeling and measurements of PI³, we developed a series of large volume dense plasma sources and high-voltage pulsed power supplies (HV PPS). Three built PI³D facilities have been served as stand benches for research on control of PI³D process, and improvement of the entire system specifications toward commercialization. Surface modification of various metals and polymers with PI³D were carried out to find out the prospective market niche for the technology. Eventually, closed cooperation of the plasma physics and pulsed power staff allowed creating state-of-the-art PI³D tools capable to fulfill industry demand.     

高功率脉冲磁控溅射沉积原理与工艺研究进展*

高功率脉冲磁控溅射技术是一种峰值功率超过平均功率2个量级、溅射靶材原子高度离化的脉冲溅射技术,作为一种新的离子化物理气相沉积技术,已成为国际研究的热点,有关高功率脉冲放电、等离子体特性、薄膜及其工艺等方面的研究进展十分迅速。文中从高功率脉冲磁控溅射的原理出发,介绍10多年来高功率脉冲电源的发展,从高功率脉冲放电等离子体特性与放电物理、等离子体模型,以及沉积速率和薄膜特性等方面综述技术的研究进展。     

7075铝合金微等离子体氧化硼酸盐体系电解液配方的优化

利用微等离子体氧化技术,在7075铝合金表面原位生成了陶瓷层.采用正交实验法确定了在硼酸盐体系中进行微等离子体氧化的最佳电解液配方,通过SEM及XRD分析了陶瓷层的形貌及相组成.结果表明:陶瓷层硬度可达到812HV0.1;陶瓷层表面形貌均匀,膜层致密,主要由γ-Al2O3组成.     

Radio frequency bias power effects on silicon nitride film deposited in SiH4-NH3 using a plasma-enhanced chemical vapor deposition

Silicon nitride films were deposited at room temperature in a plasma-enhanced chemical vapor deposition system. Ion energy and ion energy flux were measured with an ion energy analysis system. The effects of the radio frequency bias power on the ion energy distribution, deposition rate, refractive index, and surface roughness were examined along with the correlations between the ion energy diagnostics and film properties. The bias power varied from 30 W to 90 W. The surface roughness measured by atomic force microscopy was detailed in terms of the mean surface roughness and major pixel density. The deposition rate increased from 271 Å/min to 308 Å/min, increasing the bias power and correlation with the ion energy. Particularly, the refractive index increased with a decrease in the bias power. This is a unique feature resulting from the room-temperature deposition of silicon nitride film controlled in terms of the bias power. Moreover, the large variation from 1.94 to 2.49 facilitates the control of the refractive index as a function of the bias power. Strong dependency of the refractive index on the ion energy flux was also identified.