激光加热在Al2O3/Ti系梯度功能材料制备过程中的作用及机理

梯度功能材料是一种界面连续化的新型复合材料,本文研究了激光加热在合成Al2O3/Ti系梯度功能材料过程中的作用和机理,同时用激光大光斑加热方法制备出直径11mm厚度3mm完整的FGM试样并加以分析,以及首次采用在试样中埋设微细热电偶成功地测出了激光加热造成的温度梯度分布。     

双激光束熔覆过程平顶辅助光束对陶瓷涂层温度场的影响

在金属表面激光熔覆陶瓷材料过程中,过大的温度梯度产生的热应力易使熔覆层开裂。降低激光熔覆陶瓷材料过程中的温度梯度,一定程度上能够降低热应力,抑制裂纹缺陷产生。通过模拟计算Ti6Al4V基板上双激光束熔覆Al2O3涂层过程温度场的分布规律,提出采用能量均匀的平顶辅助激光束为熔覆过程提供预热缓冷的方法,通过改变平顶辅助光束光斑大小及功率密度,研究平顶辅助光束预热缓冷对熔覆层温度分布及温度梯度大小的影响。计算结果表明,平顶辅助激光束使熔覆过程出现明显的预热缓冷特征,能够有效降低熔覆层温度梯度。熔覆过程中Al2O3陶瓷塑性点(1533K)温度梯度随预热缓冷温度的升高而降低,但在预热缓冷温度升至塑性点附近温度时会引起塑性点温度梯度回升。实际加工中预热缓冷温度越高对加工过程越有利,但应避开塑性点附近温度。     

添加剂SiO2在等离子喷涂陶瓷涂层及其激光重熔中的作用研究

系统研究了添加剂 Si O2 在等离子喷涂陶瓷涂层及其激光重熔中的作用 .添加剂 Si O2 的 液相烧结 作用在高熔点 Zr O2 陶瓷涂层中比较明显 ,而在较低熔点 Al2 O3陶瓷中不明显 .在激光重熔中 ,Si O2 能降低 Zr O2 熔化层应力并阻碍裂纹扩展 ;在 Al2 O3陶瓷涂层中 ,Si O2 还能使熔化层晶粒均匀化 ,并在晶粒间形成连续玻璃质抑制裂纹形成、阻碍裂纹扩展 .而 Al2 O3陶瓷涂层中的Ti O2 ,激光处理时生成 Ti Al2 O5,此相导致熔化层产生巨大的不对称应力使之易出现裂纹 ,但其能提高涂层的致密度和耐磨性     

激光烧结陶瓷温度场的数值模拟

根据热传导理论，推导出了激光烧结陶瓷过程中的热传导方程;并采用数值模拟的方法，编写了基于有限差分法的计算机程序。在此基础上，分别模拟计算了在各种不同的烧结工艺条件下，CO2激光辐照Al2O3陶瓷的温度场,结果表明,采用激光辐照的办法烧结陶瓷可以使陶瓷在短时间内达到很高的温度。此外，还计算了烧结过程中材料的温度随空间的变化曲线,结果表明,平行于激光辐照方向的温度梯度大小不随烧结时间变化而只与激光功率有关，激光功率越大温度梯度越大。研究还发现：垂直激光辐照方向的温度梯度的大小取决于激光束的功率密度分布和光斑大小。     

Li2O掺杂对CBS/Al2O3玻璃陶瓷性能的影响

研究了Li2O掺杂对CBS/Al2O3玻璃陶瓷烧结性能和介电性能的影响.结果表明,掺杂适量的Li2O可改善CBS/Al2O3玻璃陶瓷的烧结性能和介电性能,当掺杂Li2O的质量分数为0.5%时,CBS/Al2O3玻璃陶瓷在810 ℃可实现低温致密化烧结,试样的体积密度为2.89 g/cm3;在1 MHz的测试频率下,该材料的介电常数为8.6,介电损耗为1.0×10-3;XRD分析表明其相组成主要为CaSiO3、CaAl3BO7、残余Al2O3和玻璃相.     

TiAl合金表面激光重熔复合陶瓷涂层温度场数值模拟及组织分析

为了研究激光重熔工艺参数对等离子体喷涂复合陶瓷涂层组织结构的影响,根据激光重熔的特点,采用ANSYS有限元软件的参数化设计语言,建立了TiAl合金表面激光重熔等离子体喷涂Al2O3-13%TiO2(质量分数)复合陶瓷涂层连续移动三维温度场有限元模型,对激光重熔温度场进行了分析.分析结果表明,当陶瓷涂层厚度较大时,受到陶瓷材料导热系数较低的影响,激光重熔时无法使整个陶瓷层实现完全重熔,根据重熔时作用区温度场分布,可将整个涂层分为重熔区、烧结区和残余等离子体喷涂区;在优化的工艺参数下,采用相对较低的激光重熔功率和较低的扫描速度能够获得厚度较大的重熔区和烧结区.实验结果表明,重熔后的陶瓷涂层形成了晶粒细小且致密的等轴晶重熔区、烧结区和片层状残余等离子体喷涂区,并且重熔区和烧结区厚度的计算值和实验值吻合较好.     

激光沉积制备钛基功能梯度材料优化设计

为了提高Ti6Al4V钛合金的耐磨性能,研究了在其表面采用激光沉积制造原位自生TiC为强化相的钛基功能梯度材料(Ti-FGM)的设计。首先对FGM组分的弹性模量、泊松比、热膨胀系数、密度以及热导率等物性参数进行估算。然后利用有限元分析的方法,对梯度材料进行了热应力优化设计,确定了FGM的最佳形状分布因子P=0.5、层数为6和单层厚度为1 mm。并根据最优参数计算出各层的组分,为下一步进行激光沉积制备工艺提供了依据。     

宽带激光熔覆梯度生物活性陶瓷复合涂层组织与性能

为了增加基材与生物陶瓷涂层之间的结合强度,消除激光熔覆过程中基材与生物陶瓷涂层之间的开裂倾向,设计了一种梯度生物陶瓷复合涂层并采用宽带激光熔覆技术在Ti-6Al-4V合金上制备了梯度生物陶瓷复合涂层,对其组织和性能进行了研究.结果表明:钙和氧元素主要分布在生物陶瓷涂层中;钛和钒元素主要分布在基材和合金化层内;磷元素分布在合金层与陶瓷层中.合金层中基底组织上分布着白色共晶组织和白色颗粒,基底组织主要为Ti(Al,P,Fe,V)相,白色共晶组织主要为Fe2Ti4O AlV3,白色颗粒为结晶析出的Al3V0.333Ti0.666;生物陶瓷层中的基底组织为胞状晶,其上分布有灰色相和白色颗粒相,胞状晶主要为GaO、CaTiO3和HA,灰色相为β-TCP及Ca2Ti2O6,白色颗粒相为TiO2.陶瓷涂层表面形成了类珊瑚礁结构及短杆堆积结构.这种表面结构将有助于为骨细胞长入生物陶瓷涂层提供通道.陶瓷层与钛合金基体之间的结合强度大于37.3 MPa.合金层的最高硬度为1600 HV0.2,生物陶瓷涂层显微硬度最大值约为1300HV0.2.     

灾害医学救援中应把握的几个要点

制备了具有不同Al2O3含量的(Ca0.7Nd0.3)(Ti0.7Al0.3)O3微波介质陶瓷,并通过XRD、SEM、能谱分析(EDS)及材料介电性能测试结果的分析研究了Al2O3对陶瓷体烧结性能、介电性能和显微结构的影响.结果发现,添加Al2O3后体系主晶相未发生改变,仍为正交钙钛矿结构.Al2O3的添加促进了晶粒的生长,有效地降低了体系的烧结温度,材料的介电常数不随Al2O3的添加发生明显变化,但其品质因数与对应频率的乘积(Q×f)值则随添加量的增大呈先上升后减小的趋势,最高可达25 153 GHz.     

液相包覆法引入B2O3对Ba2Ti9O20陶瓷介电性能的影响

以BaCO3和TiO2粉末为原料,采用固相反应法合成Ba2Ti9O20主晶相,以H3BO3溶液为前驱液,通过液相包覆技术引入B2O3助烧剂以降低Ba2Ti9O20陶瓷的烧结温度.研究了液相包覆B2O3对Ba2Ti9O20陶瓷的烧结和介电性能的影响.结果表明,液相包覆B2O3后,Ba2Ti9O20陶瓷的烧结温度从1400...     

Investigation of silicon-based light emitting diode sub-mounts: Enhanced performance and potential for improved reliability

Aluminum nitride (AlN) and aluminum oxide (Al₂O₃) ceramic light emitting diode (LED) sub-mounts are the most widely used package substrate for recently-developed high-brightness (HB) LED package applications because they exhibit superior thermal conductivity compared to conventional printed circuit board (PCB) package substrates. Nonetheless, the Al₂O₃ ceramic sub-mount exhibits thermal conductivity in an unacceptable range, and manufacturing the AlN ceramic sub-mount is problematic due to high material cost and difficult processing. Wafer-level packaging (WLP) technology has shown noticeable improvements in manufacturing and silicon exhibits outstanding thermal conductivity. Thus silicon might become an alternative package substrate for HB LEDs. This research studied the feasibility of replacing conventional ceramic sub-mounts with WLP LED sub-mounts. The performance features of thermal dissipation, insulation, and high temperature reliability of LED sub-mounts with variable SiO₂ thickness were analyzed and compared to the results obtained from conventional Al₂O₃ and AlN ceramic sub-mounts. Experimental results show that silicon LED sub-mounts lead to better thermal dissipation performance than do Al₂O₃ ceramic sub-mounts, and the results also reveal acceptable insulation performance and high temperature reliability for silicon sub-mounts.     

Cold Sintering Process of Composites: Bridging the Processing Temperature Gap of Ceramic and Polymer Materials

Co‐sintering ceramic and thermoplastic polymer composites in a single step with very high volume fractions of ceramics seems unlikely, given the vast differences in the typical sintering temperatures of ceramics versus polymers. These processing limitations are overcome with the introduction of a new sintering approach, namely “cold sintering process” (CSP). CSP utilizes a transient low temperature solvent, such as water or water with dissolved solutes in stoichiometric ratios consistent with the ceramic composition, to control the dissolution and precipitation of ceramics and effect densification between room temperature and ≈200 °C. Under these conditions, thermoplastic polymers and ceramic materials can be jointly formed into dense composites. Three diphasic composite examples are demonstrated to show the overall diversity of composite material design between organic and inorganic oxides, including the microwave dielectric Li₂MoO₄–(? C₂F₄ ? ) _n , electrolyte Li_1.5Al_0.5Ge_1.5(PO₄)₃–(? CH₂CF₂ ? ) _x [? CF₂CF(CF₃)? ] _y , and semiconductor V₂O₅–poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate composites. Cold sintering is more general and shall have a major impact on the processing of composite materials for many different applications, mechanical, thermal, and electronic, to mention a few possibilities. CSP concepts open up new composite material design and device integration schemes, impacting a wide variety of applications.     

Optical Properties and Durability of Al2O3-NiP/Al Solar Absorbers Prepared by Electroless Nickel Composite Plating

A simple and low-cost method, electroless nickel composite plating, was used to deposit an Al₂O₃-NiP composite coating on an Al substrate to form an Al₂O₃-NiP/Al solar absorber. The effects of the Al₂O₃ content in the Al₂O₃-NiP composite coating, the thickness of the coating, and the use of a double-layer Al₂O₃-NiP composite coating and a TiO₂ antireflection (AR) layer on the optical characteristics of the Al₂O₃-NiP/Al absorbers were studied. The absorptance (α) and thermal emittance (ε) of the Al₂O₃-NiP/Al absorbers increased with the Al₂O₃ content in the Al₂O₃-NiP composite coating and decreased as the thickness of the coating increased. A double-layer Al₂O₃-NiP/Al absorber with 2:1 thickness ratio of the top layer (Al₂O₃-NiP with 25 vol.% Al₂O₃) to the inner layer (Al₂O₃-NiP with 7 vol.% Al₂O₃) had the best optical properties (α/ε = 0.746/0.103). The optimal double-layer Al₂O₃-NiP/Al absorber with a 106-nm-thick TiO₂ AR layer achieved absorptance of 0.893 and thermal emittance of 0.111. The results of a thermal stability test and a condensation test revealed that the TiO₂-coated double-layer Al₂O₃-NiP/Al absorbers had excellent thermal stability, and their failure time in the condensation test exceeded 100 h.     

Solid-State Reaction Mechanism and Deliquescence Phenomenon of K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>Nb<Subscript>0.7</Subscript>Al<Subscript>0.3</Subscript>O<Subscript>3</Subscript> Ceramic

Development of (K,Na)NbO₃-based ceramics has attracted much attention in recent decades. In this work, K_0.5Na_0.5Nb_0.7Al_0.3O₃ ceramic was prepared using conventional solid-state processing. A deliquescence phenomenon was observed when the specimen was exposed to moist atmosphere. The reaction mechanism and cause of deliquescence were investigated using x-ray diffraction analysis, scanning electron microscopy, energy-dispersive spectrometry, electron microprobe analysis, inductively coupled plasma mass spectrometry, and thermogravimetric/differential scanning calorimetric analysis. The results revealed interactions mainly amongst the raw materials K₂CO₃, Na₂CO₃, and Nb₂O₅ as well as K₂CO₃, Na₂CO₃, and Al₂O₃, which can influence the sintering behavior of the mixture. (K,Na)NbO₃ and (K,Na)AlO₂ were present in the sintered K_0.5Na_0.5Nb_0.7Al_0.3O₃ ceramic, with the latter leading to deliquescence. During the sintering process, Al₂O₃ reacts with alkali oxides (Na₂O and K₂O), which are the decomposition products of carbonates, to form (K,Na)AlO₂. In addition, Al₂O₃ is more likely to react with K₂O compared with Na₂O.     

原子层沉积氧化铝薄膜对多晶太阳能电池表面钝化的影响

A stack of Al2O3/SiNx dual layer was applied for the back side surface passivation of p-type multi-crystalline silicon solar cells, with laser-opened line metal contacts, forming a local aluminum back surface field （local Al-BSF） structure. A slight amount of Al2O3, wrapping around to the front side of the wafer during the thermal atomic layer deposition process, was found to have a negative influence on cell performance. The different process flow was found to lead to a different cell performance, because of the Al2O3 wrapping around the front surface. The best cell performance, with an absolute efficiency gain of about 0.6% compared with the normal full Al-BSF structure solar cell, was achieved when the Al2O3 layer was deposited after the front surface of the wafer had been covered by a SiNx layer. We discuss the possible reasons for this phenomenon, and propose three explanations as the Ag paste, being hindered from firing through the front passivation layer, degraded the SiNx passivation effect and the Al2O3 induced an inversion effect on the front surface. Characterization methods like internal quantum efficiency and contact resistance scanning were used to assist our understanding of the underlying mechanisms.     

Customized glass sealant for ceramic substrates for high temperature electronic application

This study investigates the ceramic to ceramic bonding, using composite glass frit as the binding layer that is able to tolerate a high temperature environment for ruggedized microelectronic applications. Shear strength measurements were carried out at both room and high temperature (i.e. 250 °C) to evaluate room and high temperature performance of the joints. The glass joints in both the Al₂O₃/glass/Al₂O₃ and AlN/glass/AlN systems maintained their integrity even when shear-tested at 250 °C. The results of the mechanical and microstructural characterizations demonstrate that Bi-based two phase glass frit bonding is an effective ceramic bonding method for harsh-environment electronic packaging.     

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

Atomic‐layer‐deposited aluminium oxide (Al₂O₃) is applied as rear‐surface‐passivating dielectric layer to passivated emitter and rear cell (PERC)‐type crystalline silicon (c‐Si) solar cells. The excellent passivation of low‐resistivity p‐type silicon by the negative‐charge‐dielectric Al₂O₃ is confirmed on the device level by an independently confirmed energy conversion efficiency of 20·6%. The best results are obtained for a stack consisting of a 30 nm Al₂O₃ film covered by a 200 nm plasma‐enhanced‐chemical‐vapour‐deposited silicon oxide (SiO_x) layer, resulting in a rear surface recombination velocity (SRV) of 70 cm/s. Comparable results are obtained for a 130 nm single‐layer of Al₂O₃, resulting in a rear SRV of 90 cm/s. Copyright © 2008 John Wiley & Sons, Ltd.     

激光熔覆原位自生复相陶瓷颗粒增强涂层

借助光学显微镜、X射线衍射仪、电子探针及显微硬度计等手段对熔覆层的组织、物相、元素分布和显微硬度分布特征进行了研究。熔覆层不同位置的凝固特征参数不同,形成的组织亦不同。陶瓷相的引入使得熔覆层晶粒细小,枝晶生长方向发生紊乱。原位反应生成的TiB2,Al2O3为亚微米颗粒,主要分布在晶粒内部,形成晶内复合,而未反应的TiO2,B2O3陶瓷颗粒分布在晶间。熔覆层物相主要为基体的γ相和基体上弥散分布的γ'相以及Al2O3,TiB2等陶瓷相等。研究了激光加工参数对显微硬度分布的影响。磨损试验表明,陶瓷增强颗粒的加入在很大程度上提高了覆层的抗磨损性能。     

High-K dielectrics for inter-poly application in non volatile memories

Aim of this work is to investigate the conduction characteristics of different high-K dielectrics deposited by ALD technique. A novel methodology which allows the evaluation of very low leakage current at least two-orders lower than standard I–V characteristics with a reduced 3-masks process flow has been used. A comparison with standard ONO technology is performed and shows that the Al₂O₃ layer is the most promising candidate for ONO replacement. Different techniques for depositing this layer have been compared investigating the impact of subsequent thermal treatments, which greatly improve Al₂O₃ performances.