High-efficiency CIGS solar cells with modified CIGS surface

CIGS films were treated in In–S aqueous solution for high-efficiency CIGS solar cells. The In–S aqueous solution contained InCl₃ and CH₃CSNH₂ (thioacetamide). The In–S treatment modified the CIGS surface favorably for high-efficiency CIGS solar cells as evidenced by the increase in V_oc, J_sc and FF. The In–S treatment formed thin CuInS₂ layer on the CIGS surface which contributes to the high efficiency and stable performance of the CIGS solar cell. The best cell showed an efficiency of 17.6% (V_oc=0.649 V, J_sc=36.1 mA/cm² and FF=75.1%) without any annealing and light soaking before I–V measurement.     

Characterization of CuInSe2/CdS thin-film solar cells prepared using CBD

CuInSe₂/CdS thin-film heterojunction solar cells were fabricated entirely by chemical bath deposition technique. The illuminated J−V characteristics of the devices prepared with different thicknesses of CdS and CuInSe₂ were studied. The typical solar cell parameters obtained for the best cell are: V_oc = 365 mV, J_sc = 12 mA/cm², FF = 61%, and η = 3.1% under an illumination of 85 mW/cm² on a cell of active area 0.1 cm². The J−V and C−V characteristics under dark condition and the spectral response were also studied for the best cell. The diode quality factor obtained is 1.7.     

Photoelectrochemical behavior of chemically deposited CdSe and coupled CdS/CdSe semiconductor films

Photoelectrochemical effects at chemically deposited CdSe thin films (2000 Å) coupled with as-prepared and air annealed (250°C) CdS films have been investigated by monitoring open-circuit voltage (V_oc) and short-circuit current density (I_sc) at varying incident light intensities and for different heat-treatments temperatures. Two consecutive chemical baths were used in the coupled system. Each bath has been optimized in earlier studies for the deposition of highly photosensitive CdS and CdSe thin films. The photoelectrochemical behavior of single and coupled films was investigated in ferricyanide redox couples. The enhanced short-circuit photocurrent of the as-deposited CdS/CdSe system, despite their lower photosensitivity, indicated that charge separation improved in the coupled system. The role of post-deposition thermal treatments in improving the photoelectrochemical cell characteristics and stability of coupled semiconductors was investigated. Excellent I–V properties were obtained for CdSe and CdS₂₅₀/CdSe photoelectrodes annealed at 280°C. For the coupled system: V_oc=960 mV; I_sc=8.6 mA/cm²; fill factor (ff)=0.53 and cell efficiency (η)=4.2%. The linearity of V_oc/ln(I_L) and I_sc/I_L plots supports the Schottky–Mott model for these interfaces. The stability of the coupled photoanode is superior to that of the CdSe only-film for the initial 3 h.     

Preparation and properties of CdS/CdTe thin film solar cell produced by periodic pulse electrodeposition technique

CdS/CdTe solar cells have been prepared by periodic pulse electrodepositionmethod. 10.8% efficient cell was made with open circuit voltage (V_oc)≈753mV, short-circuit current (J_sc)≈23.6 mA/cm² and fill factor (FF)≈0.61. Current-voltage-temperature measurments showed the variation of ideality factor (A) from 1.88 at 344 K to 4.49 at 202 K whereas voltage factor (α) was almost constant above 276 K. The junction transport is possibly dominated by a tunneling mechanism. Capacitance measurements gave the value of diffusion potential as 1.2 eV, ionized charged density as 5.9 × 10¹⁵ cm⁻³ and number of interface states (N_IS) as 2.8 × 10¹¹ cm⁻² eV⁻¹ at zero volt bias. Measurements of open circuit voltage (V_oc) with temperature gave the value of barrier height as 1.42 eV.     

p-doped μc-Si:H window layers prepared by hot-wire CVD for amorphous solar cell application

We report on boron-doped μc-Si:H films prepared by hot-wire chemical vapor deposition (HWCVD) using silane as a source gas and trimethylboron (TMB) as a dopant gas and their incorporation into all-HW amorphous silicon solar cells. The dark conductivity of these films was in the range of 1–10 (Ω cm)⁻¹. The open circuit voltage V_oc of the solar cells was found to decrease from 840 mV at low hydrogen dilution H-dil=91% to 770 mV at high H-dil =97% during p-layer deposition which can be attributed to the increased crystallinity at higher H-dil and to subsequent band edge discontinuity between μc-Si:H p- and amorphous i-layer. The short circuit current density J_sc and the fill factor FF show an optimum at an intermediate H-dil and decrease for the highest H-dil. To improve the conversion efficiency and the reproducibility of the solar cells, an amorphous-like seed layer was incorporated between TCO and the bulk p-layer. The results obtained until now for amorphous solar cells with and without the seed layer are presented. The I–V parameters for the best p–i–n solar cell obtained so far are J_sc=13.95 mA/cm², V_oc=834 mV, FF=65% and η=7.6%, where the p-layers were prepared with 2% TMB. High open circuit voltages up to 847 mV could be achieved at higher TMB concentrations.     

Photoelectrical properties of pulsed laser deposited boron doped p-carbon/n-silicon and phosphorus doped n-carbon/p-silicon heterojunction solar cells

This paper reports on the successful deposition of boron doped p-type (p-C:B) and phosphorus doped n-type (n-C:P) semiconducting carbon films and fabrication of p-C:B on n-type silicon (Si) substrate (p-C:B/n-Si) and n-C:P/p-Si cells by pulsed laser deposition at room temperature using graphite target. The B and P powder were respectively mixed with graphite powder in range from 1% to 20% of B by weight in the targets (Bwt.%) and 1–10% of P by weight in the targets (Pwt.%), and compressed into pellet targets. The B and P atoms incorporated in the films were determined by X-ray photoelectron spectroscopy to be in the range of 0.2–1.75 and 0.22–1.77 atomic percentages, respectively. The cells performances have been given under illumination I–V rectifying curve (AM 1.5, 100 mW/cm², 25 °C). The open circuit voltage (V_oc) and short circuit current density (J_sc) for p-C:B/n-Si are observed to vary from 230 to 250 mV and 1.5 to 2.2 mA/cm², respectively. While, for n-C:P/p-Si cells the V_oc and J_sc are observed to vary from 215 to 265 mV and 7.5 to 10.5 mA/cm², respectively. The p-C:B/n-Si cells fabricated using 3 Bwt.% shows highest energy conversion efficiency, η = 0.20% and fill factor, FF = 45%. While, the n-C:P/p-Si cell fabricated using 7 Pwt.% shows highest of η = 1.14% and fill factor, FF = 41%. The quantum efficiency of p-C:B/n-Si and n-C:P/p-Si cells are observed to improve with percentage of B and P, respectively. The contribution of quantum efficiency in the lower wavelength region (below 750 nm) may be due to the photon absorption by carbon layer and in the higher wavelength region is due to the Si substrates.     

Bulk-heterojunction photovoltaic devices based on donor–acceptor organic small molecule blends

We present a systematic study on photovoltaic devices that combine an organic small molecule photoactive donor–acceptor bulk heterojunction system with controlled doping of the charge transport layers. The doped transport layers are formed using high vacuum co-evaporation deposition technique (i.e. co-sublimation of matrix and dopant). Solar cell devices have been fabricated based on zinc-phthalocyanine (ZnPc) as donor (D) and fullerene (C₆₀) as electron acceptor (A) with doped charge transport layers. The cells show a short circuit current, I_sc=1.5 mA/cm², an open circuit voltage, V_oc=450 mV, a fill factor, FF=0.5, and a power conversion efficiency, η_e=3.37% under sun (10 mW/cm²) white light illumination. In addition, these bulk-heterojunction photovoltaic devices were characterized under 1 sun (100 mW/cm²) white light illumination showing I_sc=6.3 mA/cm², V_oc=500 mV, and η_e=1.04%. We have observed that the performance of such ‘bulk-heterojunction’ photovoltaic devices is critically dependent on the transport properties of the interpenetrating network D/A system and doped charge transport layers.     

Radiation effects on fabricated Cu2S/CdS heterojunction photovoltaic cells

The photovoltaic properties including I–V characteristics, junction capacitance (C–V), short-circuit current (I_sc), open-circuit voltage (V_oc), fill factor (ff), efficiency (η), and spectral response of Cu₂S/CdS heterojunction cells have been examined before and after exposure to nuclear radiation. This included γ-rays of Co-60, and electron beams (at 1.5 MeV energy).The short-circuit current (I_sc) decreased, while the open-circuit voltage (V_oc), the fill factor (ff) and the efficiency (η) increased after heat treatment (at 260°C in air for 20 min). The I_sc effect during exposure to γ-rays was studied. It was found that I_sc increases as the dose rate increases. The sensitivity dependence of the I_sc density on dose rate was observed to be linear, and hence a universal constant for its sensitivity is found to be 45 (nA/cm²) (rad/s).No permanent damage was shown until about 300 Mrad for γ rays and 380 Mrad for electron beams. After these doses, the I_sc and V_oc slightly decreased on increasing the absorbed dose.After heat treatment, the spectral response was modulated. It was found that the wavelength response against the photocurrent decreased from 1000 to 800 nm and the photocurrent also slightly decreased in the range of wavelengths from 800 to 450 nm and increased from 350 to 540 nm. Heat treatment before irradiation improved the photovoltaic cells. After irradiation by γ-rays and electron beams, the photocurrent went back to its original value by annealing (for 2 h at 500°C). The capacitance–voltage behavior decreased after irradiation and hence the doping decreased.     

The infrared processing in multicrystalline silicon solar cell low-cost technology

New directions in photovoltaics depend very often on financial possibilities and new equipment. In this paper, we present the modification of a standard screen-printing technology by using an infrared (IR) furnace for forming a n⁺/p structure with phosphorus-doped silica paste on 100 cm² multicrystalline silicon wafers. The solar cells were fabricated on 300 μm thick 1 Ω cm p-type multicrystalline Bayer silicon. The average results for 100 cm² multicrystalline silicon solar cells are: I_sc=2589 mA, V_oc=599 mV, FF=0.74, E_ff=11.5%. The cross-sections of the contacts metallized in the IR furnace, as determined by scanning electron microscopy, and the phosphorus profile measured by an electrochemical profiler are shown. IR processing offers many advantages, such as a small overall thermal budget, low power and time consumption, in terms of a cost-effective technology for the continuous preparation of solar cells.     

Characterisation of CdCl2 treated electrodeposited CdS/CdTe thin film solar cell

An over 10% efficient electrodeposited CdS/CdTe solar cell has been prepared after CdCl₂ treatment. The open circuit voltage, V_oc, short-circuit current, J_sc and fill factor, FF were 758 mV, 21 mA cm⁻² and 0.65 respectively. The diode factor calculated from current-voltage-temperature measurements changed from 1.54 at 324 K to 2.64 at 146 K. The voltage factor, α ranged from 22.83 at 324 K to 29.46 at 146 K. Data from current-voltage-temperature measurements agrees with the model of Miller and Olsen and indicates that the current transport was a combination of tunneling and interface recombination. Capacitance-voltage-temperature measurements showed that capacitance decreased with increasing frequency and increased with temperature. Capacitance was insensitive to temperature indicating an intrinsic or low-doped depletion layer. The density of interface states was found to be 6.4 × 10¹⁰ cm⁻² eV⁻¹ at 293 K. The carrier concentration of CdTe calculated from Mott-Schottky plot was 1.5 × 10¹⁶ cm⁻³.     

Photoluminescence characteristics of CdS layers deposited in a chemical bath and their correlation to CdS/CdTe solar cell performance

In this work, we study CdS films processed by chemical bath deposition (CBD) using different thiourea concentrations in the bath solution with post-thermal treatments using CdCl₂. We study the effects of the thiourea concentration on the photovoltaic performance of the CdS/CdTe solar cells, by the analysis of the I–V curve, for S/Cd ratios in the CBD solution from 3 to 8. In this range of S/Cd ratios the CdS/CdTe solar cells show variations of the open circuit voltage (V_oc), the short circuit current (J_sc) and the fill factor (FF). Other experimental data such as the optical transmittance and photoluminescence were obtained in order to correlate to the I–V characteristics of the solar cells. The best performance of CdS–CdTe solar cells made with CdS films obtained with a S/Cd ratio of 6 is explained in terms of the sulfur vacancies to sulfur interstitials ratio in the CBD–CdS layers.     

Preparation of Cu(In,Ga)Se2 thin films from Cu–Se/In–Ga–Se precursors for high-efficiency solar cells

Improved preparation process of a device quality Cu(In,Ga)Se₂ (CIGS) thin film was proposed for production of CIGS solar cells. In–Ga–Se layer were deposited on Mo-coated soda-lime glass, and then the layer was exposed to Cu and Se fluxes to form Cu–Se/In–Ga–Se precursor film at substrate temperature of over 200°C. The precursor film was annealed in Se flux at substrate temperature of over 500°C to obtain high-quality CIGS film. The solar cell with a MgF₂/ITO/ZnO/CdS/CIGS/Mo/glass structure showed an efficiency of 17.5% (V_oc=0.634 V, J_sc=36.4 mA/cm², FF=0.756).     

Preliminary photovoltaic cells with single crystal CIS substrates

Using the Bridgman method, ingots of CuInSe₂ have been grown, which are microcrackfree, void-free and adhesion-free. From these, p-type substrates have been obtained for the fabrication of preliminary CIS/CdS/ZnO and CIS/CdS/CdO photovoltaic cells, where the window layers were deposited, respectively, by rf sputtering from a ZnO target and by dc reactive sputtering from a Cd target and where the CdS buffer layer was deposited by a chemical bath method. These cells have yielded approximate illuminated jj_sc, V_oc,η and FF values, respectively, up to 28 mA/cm², 0.42 V, 5% and 0.41 for effective areas of 7 to 22 mm².     

Improved Jsc in CIGS thin film solar cells using a transparent conducting ZnO:B window layer

A comparative study of the cell performance of CIGS thin-film solar cells fabricated using ZnO:Al and ZnO:B window layers has been carried out. ZnO:B films were deposited by RF magnetron sputtering using an undoped ZnO target in a B₂H₆–Ar gas mixture. The short-circuit current (J_sc) was found to improve upon the replacement of the ZnO:Al layer with ZnO:B layers. This improvement in J_sc is attributed to an increase in quantum efficiency due to the higher optical transmission of the ZnO:B layer in the near-infrared region. The best cell fabricated with a MgF₂/ZnO:B/i-ZnO/CdS/CIGS/Mo structure yielded an active area efficiency of 18.0% with V_oc=0.645 V, J_sc=36.8 mA/cm², FF=0.76, and an active area of 0.2 cm² under AM 1.5 illumination.     

Photosensitization of nanocrystalline TiO2 films by a polymer with two carboxylic groups, poly (3-thiophenemalonic acid)

Photovoltaic devices were assembled using a conducting polymer; poly (3-thiophenemalonic acid) sensitized TiO₂ electrodes and an electrolyte containing I₃⁻/I⁻ redox couple. This cell exhibited a short-circuit photocurrent (J_sc) of 6.65 mA cm⁻², an open circuit voltage (V_oc) of 355 mV and an efficiency of 1.5% under the illumination of 100 mW cm⁻² (AM 1.5). Addition of an ionic liquid, 1-methyl 3-n-hexylimidazolium iodide, into the electrolyte led to an improvement in the cell performances, achieving an overall efficiency of 1.8% under the same illumination. The average cell characteristics of the later devices are , with a fill factor of 0.65.     

Improved Cu(In,Ga)(S,Se)2 thin film solar cells by surface sulfurization

Surface sulfurization was developed as a technique for fabricating efficient ZnO : Al/CdS/graded Cu(In,Ga)(S,Se)₂/ Mo/glass solar cells. Prior to the sulfurization, single-graded Cu(In,Ga)Se₂ (CIGS) films were deposited by a multi-stage process. The sulfurization of CIGS films was carried out using a H₂S---Ar mixture at elevated temperatures. The crystallographic and compositional properties of the absorber layers were investigated by XRD, SEM and AES analyses. After sulfurization, sulfur atoms were substituted for selenium atoms at the surface layer of CIGS films to form a Cu(In,Ga)(S,Se)₂ absorber layer. The diffusion of sulfur depends strongly on the grain structure of CIGS film. The cell efficiency of the 8–11% range before sulfurization was improved dramatically to 14.3% with V_oc = 528 mV, J_sc = 39.9 mA/cm² and FF = 0.68 after the sulfurization process.     

Highly efficient 1 μm thick CdTe solar cells with textured TCOs

Thickness reduction of CdTe absorption layer down to 1 μm has been achieved by controlling the temperature profile used during the close-spaced sublimation (CSS) growth. Transparent conducting oxides, such as indium tin oxide (ITO) and textured fluorine doped tin oxide (SnO₂:F) films have been investigated as transparent electrodes for such 1-μm-thick CdTe absorption layers to increase the incident light confinement and thus to achieve higher conversion efficiency. The contribution in solar cell performance has been found in the case of textured TCOs with optimum haze ratio (roughness). Conversion efficiencies of 10.6% (V_oc: 0.75 V, J_sc: 22.02 mA/cm², FF: 0.64, area: 1 cm²) and 11.2% (V_oc: 0.78 V, J_sc: 22.6 mA/cm², FF: 0.63) have been achieved for only 0.6-μm-thick CdTe absorption layers with SnO₂:F-TCO of 11% and 3% of haze ratios, respectively.     

Dye-sensitized solar cell based on Rose Bengal dye and nanocrystalline TiO2

Dye-sensitized solar cell is fabricated using Rose Bengal dye (RB) for sensitization of nanocrystalline TiO₂ and that imparts extension in spectral response towards visible region by modifying the semiconductor surface. Further, the photoresponse of the cell was evaluated by analyzing its J–V and impedance characteristics under illumination with metal halide light source of 400 W with an incident light of 73 mW/cm². Various photovoltaic parameters like J_sc, V_oc, FF were evaluated and found to be 3.22 mA, 890 mV, 0.53, respectively, resulting conversion efficiency (η) of 2.09%. Impedance analysis of the cell was carried out to investigate the internal resistance of the cell by recording Cole–Cole plots in between real and imaginary impedance in dark and with illumination under variable biasing, i.e. from 0 to 3 V.     

Investigation of non-aqueous electrodeposited CdS/Cd1−xZnxTe heterojunction solar cells

Polycrystalline Cd_1−xZn_xTe solar cells with efficiency of 8.3% were grown by cathodic electrodeposition on glass/ITO/CdS substrates using non-aqueous ethylene glycol bath. The deposit is characterised versus the process conditions by XRD and found to possess a preferred (1 1 1) orientation on Sb doping in the electroplating bath. The surface morphology of the deposit is studied using atomic force microscope. The average RMS roughness for the ternary film was higher than that for the binary CdTe. Optical properties of the films were carried out to study the band gap and calculation of molar concentration ‘x’. The effects of Sb doping in CdS/Cd_1−xZn_xTe heterojunctions have been studied. The short circuit current density (c) was found to improve and series resistance (R_s) reduced drastically upon Sb doping. This improvement in J_sc is attributed to an increase in quantum efficiency. The evaluation of solar cell parameters was also carried out using the current–voltage characteristics in dark and illumination. The best results were obtained when 2×10⁻³ M ZnCl₂ along with antimony were present in the deposition bath. Under AM 1.5 conditions the open circuit voltage, short circuit current density, and fill factor of our best cell were V_oc=600 mV, J_sc=26.66 mA/cm², FF=0.42 and efficiency, η=8.3%. The carrier concentration and built-in potential of Cd_1−xZn_xTe calculated from Mott–Schottky plot was 2.72×10¹⁷ cm⁻³ and 1.02 eV.     

Tungsten diselenide heterojunction photoelectrodes

Tungsten diselenide intercalated with indium p-In_0.5WSe₂ as the semiconducting base layer has been used in the film photocell ITO/WO₃/In_0.5WSe₂. The short-circuit current I_sc of that photocell equals 19.20 mA cm⁻², the open-circuit voltage V_oc = 0.57 V, and the photovoltaic conversion efficiency η = 7.52%.