金刚石锯片的激光焊接工艺参数试验研究

采用800W基模CO2激光器对金刚石锯片进行了激光焊接研究。试验并研究了激光功率、焊速、离焦量及偏移量等工艺参数对金刚石锯片的激光焊接质量的影响,获得了焊接的最佳工艺参数,焊缝深宽比约为2mm,焊接熔合深度约为1.2mm。激光焊接的金刚石锯片显著地提高了其结合强度及承载能力。     

高功率CO2激光焊接三明治金刚石锯片

利用DC025扩散冷却板条(SLAB)激光器系统地研究了激光焊接三明治金刚石锯片的焊接缺陷和焊接工艺。结果表明焊接缺陷主要表现为焊缝中大量的气孔和较多的铜,降低了焊缝强度。气孔来源于基体里黏接剂、油污与粉末冶金刀头的共同作用,采用正面熔透1/2,反面完全熔透的焊接方式和提高焊接速度来减少气孔缺陷。铜来源于基体里铜板的熔化,当激光偏向刀头时,铜的含量降低。φ50 mm三明治锯片合适的焊接参数为激光偏移量0～ 0．20 mm,正面焊接线能量为25～40 J/mm,且激光功率低于1000 W;反面焊接线能量为80～150 J/mm,且激光功率高于1500 W;此时焊缝铜的质量分数为0．2％～1．1％,焊接气孔较少,焊缝抗弯强度满足EN13236安全标准。     

高效率3工位激光焊接系统的控制优化

为了提高高功率CO2激光加工系统的光束利用效率与加工过程的自动化程度,利用可编程逻辑控制器和运动控制器设计了一套3工位激光自动焊接控制系统。通过进行时序优化,可同时进行金刚石锯片的普齿、斜齿和金刚石钻头的焊接加工。每个工位可独立完成手动调试、手动/自动焊接,并可以按照激光焊接工艺要求,实时进行激光功率调节。结果表明,该系统可以焊接ø115mm～ø600mm的各种普齿、斜齿锯片,以及ø20mm～ø250mm的各种金刚石钻头;光束利用率达到95%以上,在同种规格产品加工过程中,生产效率提高了50%,同时,系统具有全面的故障诊断、报警等功能。     

金刚石圆锯片的激光焊接设备与工艺研究

介绍了一种金刚石圆锯片的激光焊接系统,该系统采用半自动方式,由约束放电激励CO2激光器、三工位光路转换器、焊接工作台及工装夹具组成。采用该系统进行金刚石锯片的激光焊接,研究了激光焊接工艺参数及其对焊缝弯曲强度、焊缝外观、金相组织及显微硬度分布的影响。     

激光焊接金刚石锯片的研究现状

从激光焊接金刚石锯片的焊接过渡层材料成分、焊接工艺和焊接产品检测3个方面对该方法的国内外现状进行了综述。选作刀头过渡层材料成分的元素包括单元素(如Co,Ni)、双元素(如FeCo,FeNi,CoNi,FeCu)和3元素(如FeCoNi,FeCoCu)3种。结果表明,含钴元素的过渡层激光焊接性能优异;金刚石锯片的激光焊接工艺较为成熟;目前需要100%检测激光焊接锯片的强度;对激光焊接过程的机理和数值模型研究、过渡层预合金粉末以及在线质量检测技术研究不够。因此今后的研究重点应该围绕这些问题展开。     

激光焊接金刚石锯片的特征声信号反馈控制

激光焊接金刚石锯片过程中形成的光致等离子体伴随着具有明显特征的声响,这种特征声信号可看成是由频率为16kHz左右的等离子体声信号被一周期信号所调制,周期信号的频率约为300Hz。介绍了特征声信号的提取方法及其用于激光焊接金刚石锯片的反馈控制系统构成和基本原理。试验结果表明,采用特征声信号反馈控制的激光焊接金刚石锯片在焊接缺陷方面优于无反馈控制激光焊接方法。     

光束偏移量对金刚石锯片激光焊接质量的影响

光束偏移量是金刚石锯片激光焊接的一个重要的工艺参数,它直接影响焊缝中的气孔、成分及其分布和组织。     

金刚石锯片的激光焊接

研究金刚石锯片的激光焊接，分析了影响焊接的因素。     

高功率激光焊接船板的组织性能

采用高功率激光进行船板材料的焊接实验。实验条件为:10 kW快轴流CO2激光器和5轴数控机床;船用St370-2低碳钢板;SG填充焊丝;Y型坡口。采用光学显微镜(OM)、扫描电子显微镜(SEM)和X射线衍射仪(XRD)研究了激光焊缝组织和结晶特性,讨论了抑制裂纹生长因素,并进行了焊缝强度实验、硬度实验和X光探伤实验。结果表明,在8～10 kW激光功率和焊速1 m/min参数下,在12 mm厚船板上获得了无裂纹的良好焊缝,实现单面焊双面一次成形。与常规埋弧焊(SAW)焊接相比,激光焊接变形很小,激光焊缝宽度窄(最宽处5 mm),热影响区小(0.3 mm)。焊缝组织为细小板条马氏体加少量残余奥氏体,硬度HV350,抗拉强度536 N/mm2,经180°冷弯不断裂,具有良好的综合力学强韧性能。     

HR-2钢薄壁件激光热导焊研究

探讨了HR-2抗氢不锈钢制薄壁件的激光热导焊方法,研究了激光热导焊接HR-2抗氢不锈钢制薄壁件的工艺参数,分析了焊缝焊深的波动情况及影响焊深波动的因素,提出了有效的焊深波动控制措施.结果表明,采用降低焊接速度和焊前预热等措施,可以突破CO2激光热导焊接HR-2抗氢不锈钢的熔深极限,并且可降低焊深波动;在规范参数和工艺方法选择合适的情况下,激光焊接HR-2抗氢不锈钢薄壁件,可达到焊深≥0.25mm、焊深波动控制在±10%的范围以内、焊缝内部质量及表面成形质量优良的焊接要求;但焊缝质量受激光对中点和点焊点的影响很大,应尽量避免采用激光对中及点焊.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.