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1.
探讨了匀胶速度、热分解温度及退火温度对CSBT/LNO薄膜取向和性能的影响。结果表明:制备(200)衍射峰择优的CSBT/LNO薄膜的最佳热处理工艺条件为:匀胶速度4000r/min,热分解温度400℃,退火温度为725℃;薄膜样品呈现a轴择优取向,I(200)/I(119)=1.26;样品铁电性能优良,剩余极化强度2Pr=36.7μC/cm2,对应的矫顽电场2Ec=156kV/cm;相对介电常数εr=215,具有较好的频率稳定性。  相似文献   

2.
利用溶胶凝胶工艺在Pt/TiO_2 /SiO_2 /Si衬底上制备了Ca_0.4Sr_0.6Sm_xBi_4-xTi_4O_(15)铁电薄膜.研究了不同钐掺量对薄膜的显微结构、晶粒取向及铁电性能的影响.结果表明:钐掺杂对钙锶铋钛铁电薄膜既有抑制氧空位所导致的畴钉扎作用,也有抑制晶粒生长发育的作用.当钐掺量x=0.05时薄膜样品晶粒发育较良好,沿a轴择优取向,I_((200))/I_((119))=0.869;样品铁电性能优良,剩余极化强度P_r=10.2 μC/cm~2,矫顽场强度E_c=120 kV/cm.  相似文献   

3.
利用溶胶凝胶法制备了CaBi4.3Ti4O15 铁电薄膜材料,研究表明,退火工艺对CaBi4.3Ti4O15,铁电薄膜的结构、微观形貌、晶粒取向以及铁电性能影响较大,随着退火温度的提高,晶粒的取向为a轴择优取向,有利于样品的铁电性;气氛对薄膜的电学性能影响也较大,氧气气氛可以很好的抑制氧空位的产生,提高样品的铁电性.在氧气气氛下退火所得到样品的剩余极化强度(2P)和矫顽场(2Ec)分别为21.4μC/cm2和27.7kV/mm,介电常数在250±4%范围内,介电损耗在0.005~0.01之间,测试频率为1~1MHz,显示出较好的频率稳定性.  相似文献   

4.
雷天宇  孙远洋  任红  张玉  蔡苇  符春林 《表面技术》2014,43(3):129-136,174
铁酸铋是唯一一种在室温下存在的单相多铁材料,因其具有较高的铁电居里温度、较大的剩余极化强度、较小的禁带宽度和多铁特性,受到国内外的广泛关注。溶胶-凝胶法是制备铁酸铋薄膜的一种常见方法。综述了近年来溶胶-凝胶法制备铁酸铋薄膜的研究进展,详细阐述了制备工艺参数(前驱液、退火温度、退火气氛、底电极)与掺杂对铁酸铋薄膜电性能的影响;分析了不同制备工艺导致薄膜电性能出现差异的原因;归纳、总结出了目前溶胶-凝胶法制备铁酸铋薄膜的较佳工艺条件;最后,指出了亟待解决的问题。  相似文献   

5.
采用溶胶-凝胶法在ITO/glass衬底上制备了BiFeO_3薄膜。研究了退火温度对BiFeO_3薄膜样品的晶体结构、显微结构和铁电性能的影响,退火温度分别为450,475,500和525℃。并分析了相关机理。结果表明:当退火温度不高于500℃时,薄膜结晶较好,表面致密平整,随退火温度升高薄膜晶粒逐渐长大,当退火温度为500℃时,剩余极化强度Pr为62μC/cm~2;当退火温度增加到525℃时,薄膜表面晶粒较不均匀且出现了较多气孔,薄膜的铁电性能较差。  相似文献   

6.
用固相合成方法制备了Sr_2Bi_4Ti_5O_(18)铁电陶瓷,研究了烧结温度对Sr_2Bi_4Ti_5O_(18)铁电陶瓷相结构、显微结构、铁电性能和介电性能的影响,分析了相关机理.结果表明,在1150C℃进行烧结,样品晶粒发育完全,晶粒α轴择优取向,铁电性能优良,剩余极化强度2P,达到15.3μC/cm2、矫顽场强2E_c为103kV/cm;在100kHz~1MHz频率范围内,介电常数为176~168,介电损耗为0.027~0.025,具有较好的频率稳定性.  相似文献   

7.
退火温度对钴铁氧体薄膜结构和性能的影响   总被引:1,自引:0,他引:1  
采用溶胶-凝胶法结合匀胶旋涂工艺在复合基片(Pt/Ti/SiO2/Si)上制备了钴铁氧体(CoFe2O4)薄膜,利用XRD、SEM、VSM分析了薄膜的微结构以及磁性能,研究了不同退火温度对钴铁氧体薄膜的结构和磁性能的影响.结果表明,钴铁氧体在500℃时开始形成尖晶石相.随着退火温度的增高,钴铁氧体晶粒逐渐长大,饱和磁化...  相似文献   

8.
用溶胶-凝胶法制备出Sr_2Bi_5FeTi_5O_(21)(简称SBFTi)铁电陶瓷,研究了烧结温度对SBFTi铁电陶瓷的相结构、微观形貌、铁电性能和介电性能的影响。结果表明,在1090℃下烧结的铁电陶瓷样品是以SBTi晶相为主的钙钛矿结构,a轴择优取向度较高;晶粒发育完全,球形晶粒与片层状晶粒融合较好;铁电性能较好,其剩余极化强度2Pr达到了20.5μC/cm~2、矫顽场2Ec为128 kV/cm;在0.02 Hz~1 MHz频率范围内,其介电常数为147~164,介电损耗为0.012~0.030,具有较好的频率稳定性。  相似文献   

9.
以醋酸铅、钛酸丁酯、正丁醇锆以及硝酸镧为原料,甲醇和乙醇为溶剂配制Pb_(0.92)La_(0.08)(Zr_(0.65)Ti_(0.35))O_3溶胶,采用溶胶-凝胶法经550℃的快速热处理,在LaNiO_3/Si上制备了Pb_(0.92)La_(0.08)(Zr_(0.65)Ti_(0.35))O_3铁电薄膜。利用X射线衍射仪分析了薄膜组分与结构,标准铁电分析仪测试了薄膜的铁电性能;利用紫外光源对薄膜进行光照实验;通过分析薄膜厚度对其光生伏特效应的影响,进一步探讨分析了铁电薄膜光生伏特效应的产生机理。结果表明,在20 V电压下,薄膜的剩余极化值和矫顽场强分别为17.485μC/cm2和10.78 k V/cm。当紫外光照强度为2.67 m W/cm~2,薄膜厚度为490 nm左右时,薄膜光照后所产生的最大光生电压值为61.5 m V。  相似文献   

10.
采用高温烧结制备钨青铜型Ba_4Sm_2Fe_2Nb_8O_(30)铁电体,研究了氧气下退火热处理对其晶体结构、介电性能和铁电性能的影响。研究表明,退火处理后,Ba_4Sm_2Fe_2Nb_8O_(30)铁电体仍为钨青铜单相,但是晶胞体积略有增大;介电常数明显降低,而介电损耗略有升高。退火前后Ba_4Sm_2Fe_2Nb_8O_(30)铁电体均观测到典型的电滞回线:退火前其矫顽电场E_c=8.35 k V/cm,剩余极化强度P_r=0.62 C/cm~2;而退火后铁电性能改善为E_c=7.2 k V/cm,P_r=1.57 C/cm~2。  相似文献   

11.
采用非平衡反应磁控溅射的方法在Si(100)基片上沉积Ti(C,N)复合膜和不同调制周期、调制比的TiN/Ti(C,N)纳米多层薄膜。薄膜的微观结构和力学性能采用X射线衍射仪(XRD)、显微硬度计进行表征。结果表明,Ti(C,N)复合膜的微观结构和力学性能与掺入C的含量有关;TiN/Ti(C,N)纳米多层膜的微观结构和力学性能与调制周期和调制比有关,其显微硬度在一定的调制周期和调制比范围内出现了超硬现象。Ti(C,N)、TiN/Ti(C,N)均为δ-NaCl面心立方结构;Ti(C,N)复合膜显微硬度提高是因为固溶强化,TiN/Ti(C,N)纳米多层膜硬度的提高主要是共格外延生长在界面处产生的交变应力场。  相似文献   

12.
脉冲直流PCVD制备Ti(C,N)薄膜及其组织结构分析   总被引:3,自引:0,他引:3  
用工业型脉冲直流等离子体化学气相沉积(PCVD)设备,针对不同混合气体CH4所占比例,在H13模具钢表面沉积了Ti(C,N)薄膜。用SEM观察薄膜断口形貌,用XRD及XPS分析薄膜相组成和价态。结果表明:一定量碳元素的加入,抑制了TiN薄膜中柱状晶的生长,并且阻止了TiN晶粒的长大。Ti(C,N)的相结构可能为TiN和TiC两相混合,但在C(或N)含量较低的膜层中,c(或N)原子也会以置换的方式存在于TiN(或TiC)单相组织中。  相似文献   

13.
氮化钛铝薄膜的制备及其摩擦学性能的研究   总被引:8,自引:0,他引:8  
用多弧离子镀方法在高速钢的基体上沉积了不同钛铝比例的氮化钛铝薄膜,研究了不同铝含量对薄膜性能的影响,采SEM、XRD、AES、表面形貌仪、显微硬度计、划痕仪对薄膜的微观结构和力学性能进行了全面测试,用球盘试验机测试了薄膜的摩擦因数,在此基础上讨论了铝在薄膜中的作用。结果表明Al的引入使膜层的硬度明显提高。所有的(Ti,Al)N试样皆由面心立方晶格(fcc)的(Ti0.5Al0.5)N相组成。随着Al含量增加,GCr15与(TiAl)N膜层之间的摩擦因数下降,减摩性能提高,耐磨性能增强。(TiA1)N涂层可以显著提高硬质合金刀具的使用寿命。  相似文献   

14.
STARTING from the binary TiN wear-resistancecoating system,multi-element PVD superhard films,e.g.(Ti,Al)N films,(Ti,Cr)N films and Ti(C,N)films,may possess better tribological properties'1"41.Forexample,Ti(C,N)films showed higher hardness andbetter thermal-wear resistance properties than TiNfilms[4-5].However,due to mismatch of physical andmicro-structural properties of the multi-element filmsand the substrate,premature failure may occur duringfilm deposition process or in applicatio…  相似文献   

15.
PCVD—Ti(CNO)薄膜的制备及性能的研究   总被引:1,自引:0,他引:1  
研究了Ti(CN)薄膜内氧的作用。研究结果表明,Ti(CN)薄膜内加入氧后可以消除薄膜的柱状晶结构,薄膜的断口呈致密的纤维状组织。随着反应气体中空气或CO2气体流量的增加,Ti(CNO)薄膜的硬度呈上升趋势,并在空气的流量为40ml/min或CO2的流量为15ml/min时(分别约占总量的15%和6%),薄膜的硬度达到最大值。  相似文献   

16.
(Zr,Ti)CN hard coatings, deposited by DC magnetron sputtering on Ti6Al4V alloy and Si substrates, were investigated as possible candidates to be used as protective layers for medical implants. Two coating types, with different non-metal/metal ratios, were prepared. The films were analyzed for elemental and phase composition, crystallographic structure, mechanical properties, corrosion behavior, surface wettability and cell viability. The coatings were found to have composite structures, in which a (Zr,Ti)CN crystalline phase coexists with an amorphous a-C(N) one. Film thickness and hardness in the ranges 1.8-2.1 μm and 25-29 GPa, respectively, were measured. The coated samples exhibited an improved corrosion resistance as compared with the Ti6Al4V alloy. Both coating types were found to be hydrophobic, the contact angles being higher than 100°. Cell viability measurements proved that the osteosarcoma cells are adherent to the coating surface, the highest viability (90.5%) after one week incubation being found for the film with high non-metal content.  相似文献   

17.
THE PLASMA-assisted chemical vapor deposition(PCVD)technique is industrially important because itis the coating process available at low temperature(<600°C)like PVD,favorable for mass-production andsuitable for complex-shaped tools due to its goodstep-coverage characteristics"'21.Therefore,TiN-basedfilms have been extensively prepared by PCVD for thepurpose of increasing the service life of cutting tools,forming tools and die molds.HC1,by-product of the common usedTiCl4-H2-N2-Ar ga…  相似文献   

18.
Precursor films based on poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and P(VDF-TrFE) blended with Pb(Zr,Ti)O3 were deposited on Si (100) substrates by spin-coating, and subsequently annealed at 443 K for 0.5 h. These films were then characterized using X-ray diffraction, atomic force microscopy and capacitance-voltage curves. Blending the precursor films of Pb(Zr,Ti)O3 with P(VDF-TrFE) led to the formation of an amorphous oxide whose concentration was proportional to the Pb(Zr,Ti)O3 content. This resulted in extension of the memory-window width with a large voltage difference ranging from 0.07 V to 4.5 V for metal-ferroelectric-silicon capacitors. Moreover, the formation of the amorphous oxide resulted in parallel shifts toward positive or negative voltages in the capacitance-voltage curves because of the fixed negative or positive charge of the oxide at the ferroelectric/Si-substrate interface. These tunable ferroelectric properties open up possibilities for diverse applications and are essential for functional devices, as well as for the commercialization of nonvolatile high-density FeRAM devices.  相似文献   

19.
In the past two decades, coatings of the Ti-Al-N ternary system have attracted considerable research and industrial interest. Nevertheless, the Ti-Al-N system still offers new interesting possibilities for coating developments such as the addition of low N contents to Ti-Al films in order to reach a good compromise between high hardness and a low friction coefficient.Ti-Al-N coatings with low nitrogen content were deposited by closed field unbalanced magnetron sputtering using two facing Ti targets inserted with Al rods. The Al/(Al + Ti) and N/(Al + Ti + N) atomic ratios were varied from 21 to 28 at.% and 0 to 33 at.%, respectively.Hexagonal close-packed (hcp) α-Ti with a preferential <001> orientation was the only phase detected by X-ray diffraction in the as-deposited films. A decrease in the α-Ti c lattice parameter was observed as aluminium was added to the films. Nitrogen addition increased the c lattice parameter and led to a progressive loss of crystallinity until quasi-amorphous films were obtained. A hardness of ≈ 13 GPa was obtained for the as-deposited films without nitrogen. A continuous increase in hardness was observed with increasing nitrogen content. The highest hardness values (up to 27 GPa) were obtained for the quasi-amorphous films. Annealing of the films with low aluminium content (Al/Al + Ti ≈ 21 at.%) did not significantly affect their structure as hcp Ti remains the only phase detected. On the contrary, annealing of the films deposited with higher aluminium contents (Al/(Al + Ti) ≈ 24 and ≈ 28 at.%) resulted in the formation of face centered cubic (fcc) Al or Ti3Al, showing that the thermal stability of the films decreased with aluminium incorporation.  相似文献   

20.
张啸宇  谭俊 《表面技术》2015,44(12):80-84,91
目的研究多层薄膜的界面对薄膜性能的影响。方法通过直流磁控溅射法在45#钢表面制备Ti N及Ti/Ti N多层薄膜,采用扫描电镜和XRD衍射分析仪对薄膜表面形貌及相结构进行观察和分析,使用纳米压痕仪、电子薄膜应力分布测试仪对Ti N及Ti/Ti多层薄膜的力学性能以及残余应力大小进行研究,并运用电化学设备对Ti N及不同调制周期的Ti/Ti多层薄膜的耐腐蚀性能进行研究。结果制备的Ti N及Ti/Ti N多层薄膜表面光滑且结构致密,Ti N晶粒细小且为非晶相;薄膜力学性能良好,内部均存在残余压应力。随着调制周期的减小,弹性模量和硬度先减小后增大,内部残余应力逐渐减小且分布不均匀程度逐渐增大。薄膜在H_2SO_4中的腐蚀试验表明:当Ti/Ti N多层薄膜调制周期为1μm时,多层薄膜的耐腐蚀性能不如Ti N薄膜,随着Ti/Ti N多层薄膜随调制周期的减小,多层薄膜的耐腐蚀性能逐渐升高;当调制周期为0.5μm时,Ti/Ti N多层薄膜的耐蚀性能已超过Ti N薄膜。结论 Ti/Ti N多层薄膜界面的增多有助于减小薄膜的残余应力,并且可提高薄膜的耐蚀性能。  相似文献   

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