Epitaxial insertion of gold silicide nanodisks during the growth of silicon nanowires

Nanodisk-shaped, single-crystal gold silicide heterojunctions were inserted into silicon nanowires during vapor-liquid-solid growth using Au as a catalyst within a specific range of chlorine-to-hydrogen atomic ratio. The mechanism of nanodisk formation has been investigated by changing the source gas ratio of SiCl4 to H2. We report that an over-supply of silicon into the Au-Si liquid alloy leads to highly supersaturated solution and enhances the precipitation of Au in the silicon nanowires due to the formation of unstable phases within the liquid alloy. It is shown that the gold precipitates embedded in the silicon nanowires consisted of a metastable gold silicide. Interestingly, faceting of gold silicide was observed at the Au/Si interfaces, and silicon nanowires were epitaxially grown on the top of the nanodisk by vapor-liquid-solid growth. High resolution transmission electron microscopy confirmed that gold silicide nanodisks are epitaxially connected to the silicon nanowires in the direction of growth direction. These gold silicide nanodisks would be useful as nanosized electrical junctions for future applications in nanowire interconnections.     

Full surface embedding of gold clusters on silicon nanowires for efficient capture and photothermal therapy of circulating tumor cells

We report on rapid thermal chemical vapor deposition growth of silicon nanowires (Si NWs) that contain a high density of gold nanoclusters (Au NCs) with a uniform coverage over the entire length of the nanowire sidewalls. The Au NC-coated Si NWs with an antibody-coated surface obtain the unique capability to capture breast cancer cells at twice the highest efficiency currently achievable (~88% at 40 min cell incubation time) from a nanostructured substrate. We also found that irradiation of breast cancer cells captured on Au NC-coated Si NWs with a near-infrared light resulted in a high mortality rate of these cancer cells, raising a fine prospect for simultaneous capture and plasmonic photothermal therapy for circulating tumor cells.     

Control of surface migration of gold particles on Si nanowires

On the surface of silicon nanowires (SiNWs) synthesized by gold (Au)-catalyzed chemical vapor deposition (CVD), Au particles 5-20 nm in diameter are formed if the growth conditions are within a specific range. We studied the mechanism of Au particle formation by growing SiNWs under different conditions, specifically by dynamically changing the growth parameters during the growth process. We show that insufficient supply of Si source to the Au-Si eutectic on top of the SiNWs enhances the migration of Au atoms on the surface of SiNWs in the form of Au-Si eutectic, which is precipitated on the surface as Au particles during cooling. We also show that using Au-Si eutectic on the surface of SiNWs as a catalyst enables one-step growth of branched SiNWs.     

A novel method for preparing vertically grown single-crystalline gold nanowires

A surfactant-free, template-less and seed-less method, namely the thermal-assisted photoreduction (TAP) process, has been developed to synthesize vertically grown Au nanowires (30-80?nm in diameter and about 2?μm in length) on the surface of thin film titanium dioxide (TiO(2)), which is locally excited by blackbody radiation. The Au nanowires thus produced are single-crystalline with a preferred [Formula: see text] growth direction. The electrical behavior investigated using a nanomanipulation device indicates that the Au nanowires possess an excellent electrical resistivity of about 3.49 × 10(-8)?Ω?m.     

Faceting mechanisms of Si nanowires and gold spreading

We report detailed structural analysis of 〈111〉 oriented silicon nanowires (NWs) grown by UHV–CVD using the VLS process with a gold catalyst. STEM-HAADF observations have revealed an unexpected inhomogeneous distribution of gold nanoclusters on the NW surface. Gold is mainly distributed on three sides among the six {112}-sidewalls and is anchored on upward {111} facets. This original observation brought us a new comprehension of the faceting mechanisms. The stability of the 〈111〉 growth direction needs the formation of facets on {112}-sidewalls with energetically favorable planes. We demonstrate that the initial formation of covered facets with a three-fold symmetry is driven by the formation of {111} Au/Si interfaces between the nucleated Si NW and the Au droplet.     

Characterization of gold nanoparticle binding to microtubule filaments

Microtubule (MT) protein filaments were used as templates for fabricating Au nanowires as a bottom-up approach for fabricating building blocks for future integrated circuits. Photochemical reduction methods were employed to form Au nanoparticles which bind and uniformly cover the MT filaments. Synthesis of the MT-templated Au nanowires was characterized using UV/vis spectroscopy and transmission electron microscopy (TEM). In addition, binding between the MT filaments and Au nanoparticles was investigated using surface enhanced Raman spectroscopy (SERS) and X-ray photoelectron spectroscopy (XPS) to establish the nature of the binding sites. A variety of functional groups were identified by SERS to interact with the Au including imidazole, sulfur, aromatic rings, amine, and carboxylate. The imidazole ring in the histidine is the most prominent functional group for Au binding. The results from these studies provide better understanding of the binding between Au and the biotemplate and give insight concerning methods to improve Au coverage for MT-templated Au nanowires.     

Gold nanowires fabricated by immersion plating

The growth mechanism of oriented Au nanowires fabricated by immersion plating was investigated. Both n-type crystal Si (c-Si) and amorphous Si (a-Si) with an electron-beam (E-beam) patterned resist nanotrench were immersed into the plating bath HAuCl(4)/HF. For the Au nanowires fabricated on c-Si, voids, nanograins, and clusters were observed at various plating conditions, time and temperature. The voids were often found in the center of the Au nanowires due to there being fewer nucleation sites on the c-Si surface. However, Au can easily nucleate on the surface of a-Si and form continuous Au nanowires with grain sizes about 10-50?nm. The resistivities of Au nanowires with width 105?nm fabricated on a-Si are about 4.4-6.5?μΩ?cm. After annealing at 200?°C for 30?min in N(2) ambient, the resistivities are lowered to about 3.0-3.9?μΩ?cm, measured in an atomic force microscope (AFM) in contact mode. The grain size of Au is in the range of ～50-100?nm. A scanning electron microscope (SEM) examination and grazing incident x-ray diffraction (GIXRD) analysis were also carried out to study the morphology and crystalline structure of the Au nanowires.     

Growth of germanium nanowires on silicon(111) substrates by molecular beam epitaxy

Heteroepitaxial growth of Ge nanowires was carried out on Si(111) substrates by MBE. Au seeds were used as precursor for the VLS growth of the nanowires. Even if the Au droplets do not act as catalyst for the dissociation of gas, they are local preferential areas where the energetic barrier of Ge nucleation is lowered compare to the remaining non activated surface. Two sets of Au seeds were used as precursors for the VLS process. The first set have an average diameter of 125 nm and the second of 25 nm. In-situ RHEED monitoring showed a Au wetting layer between these seeds before the nanowires growth as well as at the end of the Ge nanowires growth. It means that the wetting layer acted as a surfactant from the Si(111) surface to the Ge grown layer between the nanowires. Analysis of SEM images brought the fact that the diffusion of gold from the droplets on the surface and the sidewalls of the nanowires via the Ostwald ripening is a key parameter of the growth of the nanowires.     

Band-gap modulation in single-crystalline Si1-xGex nanowires

We report the energy band-gap modulation of single-crystalline Si1-xGex (0 相似文献   

Microtubule-based gold nanowires and nanowire arrays

Biological structures are attractive as templates to form nanoscale architectures for electronics because of their dimensions and the ability to interact with inorganic materials. In this study, we report the fabrication and electrical properties of microtubule (MT)-templated Au nanowires, and methods for assembling Au nanowire arrays based on these templates. The adsorption of MTs on silicon substrates is an effective means for preserving the conformation of the MT and provides a convenient platform for electrical measurements. To improve the metallization of MTs, a photochemical route for gold reduction is adapted, which leads to continuous coverage. The conductivity values measured on micrometer-long nanowires are similar to those reported for other biotemplated gold nanowires. A protocol for fabricating arrays of MT-templated gold nanowires is demonstrated.     

Enhanced photoluminescence in Au-embedded ITO nanowires

Gold (Au)-embedded indium tin oxide (ITO) nanowires were synthesized by thermal evaporation of a mixture of In(2)O(3,) SnO(2) and graphite powders on Si (100) substrates coated with Au thin films followed by annealing. At the initial stages of annealing, Au formed a continuous linear core located along the long axis of each ITO nanowire. The morphology of the Au core changed from a continuous line to a discrete line, and then to a droplet-like chain, finally evolving into a peapod in which crystalline Au nanoparticles were encapsulated in crystalline ITO with increasing annealing temperature. The ITO nanowires with the Au core showed an emission band at ~380 nm in the ultraviolet region. The ultraviolet emission intensity increased rapidly with increasing annealing temperature. The intensity of emission from the Au-peapod ITO nanowires (annealed at 750 °C) was approximately 20 times higher than that of the emission from the Au-core/ITO-shell ITO nanowires with a continuous linear shaped-Au core (annealed at 550 °C). This ultraintense ultraviolet emission might have originated mainly from the enhanced crystalline quality of the annealed ITO nanowires.     

Effects of gold diffusion on n-type doping of GaAs nanowires

The deposition of n-GaAs shells is explored as a method of n-type doping in GaAs nanowires grown by the Au-mediated metal-organic chemical vapor deposition. Core-shell GaAs/n-GaAs nanowires exhibit an unintended rectifying behavior that is attributed to the Au diffusion during the shell deposition based on studies using energy dispersive X-ray spectroscopy, current-voltage, capacitance-voltage, and Kelvin probe force measurements. Removing the gold prior to n-type shell deposition results in the realization of n-type GaAs nanowires without rectification. We directly correlate the presence of gold impurities to nanowire electrical properties and provide an insight into the role of seed particles on the properties of nanowires and nanowire heterostructures.     

Au stabilization and coverage of sawtooth facets on Si nanowires grown by vapor-liquid-solid epitaxy

Si nanowires grown in UHV by Au-catalyzed vapor-liquid-solid epitaxy are known to exhibit sidewalls with {112}-type orientation that show faceting. To understand the origin of the faceting, Au induced faceting on Si(112) surfaces was studied in situ by spot-profile-analyzing low-energy electron diffraction. With increasing Au coverage at 750 degrees C, the Si(112) surface undergoes various morphological transformations until, at a critical Au coverage of about 3.1 x 10 (14) atoms/cm (2), a phase consisting of large (111) and (113) facets forms, similar in structure to the nanowire sidewalls. This phase is stable at larger Au coverages in equilibrium with Au droplets. We suggest that Si nanowire surfaces exhibit this structure, and we derive the Au coverage on the two types of facets.     

Controllable synthesis of gold nanowires

In this work, we demonstrate a new and simple method for preparing Au nanowires by ethanol reduction of hydrogen tetrachloroaurate (HAuCl₄) without additional capping agents by a thermal process. The resulting products were investigated by UV-vis spectroscopy, transmission electron microscopy (TEM) and X-ray diffraction (XRD). The results indicated that the size and shape of the Au nanocrystals could be controlled by systematic variation of the experimental parameters including the concentration of HAuCl₄ in the reaction solution, heating temperature and reaction time. We suggest that this method introduced in our work may be more practical for the large-scale synthesis of shape-controlled metal nanomaterials.     

Selective growth of Ge nanowires by low-temperature thermal evaporation

High-quality single-crystalline Ge nanowires with electrical properties comparable to those of bulk Ge have been synthesized by vapor-liquid-solid growth using Au growth seeds on SiO(2)/Si(100) substrates and evaporation from solid Ge powder in a low-temperature process at crucible temperatures down to 700?°C. High nanowire growth rates at these low source temperatures have been identified as being due to sublimation of GeO from substantial amounts of GeO(2) on the powder. The Ge nanowire synthesis from GeO is highly selective at our substrate temperatures (420-500?°C), i.e., occurs only on Au vapor-liquid-solid growth seeds. For growth of nanowires of 10-20?μm length on Au particles, an upper bound of 0.5?nm Ge deposition was determined in areas of bare SiO(2)/Si substrate without Au nanoparticles.     

Surface-enhanced Raman scattering of rhodamine 6G on nanowire arrays decorated with gold nanoparticles

We investigate the surface-enhanced Raman scattering (SERS) of rhodamine 6G (R6G) adsorbed on Au nanoparticles attached to InP nanowires. We find that nanowire arrays act as frameworks for effective SERS substrates with a significantly higher Raman signal sensitivity than a planar framework of Au nanoparticles adsorbed two-dimensionally on a flat surface. The SERS signal displays a clear polarization-dependent effect when the nanowires are arranged in a row. We also find that the SERS signal increases with time during continuous laser illumination. The plasmon-enhanced optical forces between Au nanoparticles may either move pairs of nanoparticles closer together or attract adsorbed molecules by moving them to the junctions of Au nanoparticle aggregates. Such effects by plasmon optical forces may cause the observed increase of the SERS signal with continuous laser illumination.     

Synthesis and optical properties of ZnTe single-crystalline nanowires

Single-crystalline ZnTe nanowires with the zincblende structure have been synthesized on silicon (Si) substrates via a vapor phase transport method. The ZnTe (99.99%) powders were used as the source, and 10 nm-thick thermal evaporated gold (Au) film was used as the catalyst. The as-prepared ZnTe nanowires have diameters of 30-80 nm and lengths of more than 10 microm. The products were analyzed by X-ray diffraction, field emission scanning electron microscopy, and high-resolution transmission electron microscopy. Optical properties of these nanowires were investigated by room-temperature Raman scattering spectrum and temperature-dependent photoluminescence measurements. The results show that the as-prepared ZnTe nanowires are of high crystal quality.     

Self-organized growth of Si/Silica/Er2Si2O7 core-shell nanowire heterostructures and their luminescence

Self-organized Si-Er heterostructure nanowires showed promising 1.54 microm Er(3+) optical activity. Si nanowires of about 120-nm diameter were grown vertically on Si substrates by the vapor-liquid-solid mechanism in an Si-Er-Cl-H(2) system using an Au catalyst. Meanwhile, a single-crystalline Er(2)Si(2)O(7) shell sandwiched between nanometer-thin amorphous silica shells was self-organized on the surface of Si nanowires. The nanometer-thin heterostructure shells make it possible to observe a carrier-mediated 1.53 microm Er(3+) photoluminescence spectrum consisting of a series of very sharp peaks. The Er(3+) spectrum and intensity showed absolutely no change as the temperature was increased from 25 to 300 K. The luminescence lifetime at room temperature was found to be 70 micros. The self-organized Si nanowires show great potential as the material basis for developing an Si-based Er light source.     

The catalyst-assisted synthesis of high quality CdS single-crystal nanowires through an epitaxy mechanism

High quality wurtzite CdS nanowires have been synthesized by thermal evaporation of CdS powder onto Si substrate in the presence of Au catalyst at 650 degrees C by using pure H2 as a carrier gas. The nanowires were 10 nm in diameter and a few tens of micrometers in length. XRD patterns demonstrated that as prepared CdS is a pure crystalline material. High-resolution transmission electron microscopy of the materials showed that all CdS nanowires grew along (0001). According to analysis of selective area electron diffraction patterns taken from the interface, we proposed that there is a kind of epitaxy relationship in the interface region between Au catalyst and CdS grown, i.e., (0001)CdS // (111)Au, and [1210]CdS // [011]Au.     

Gold nanocluster distribution on faceted and kinked Si nanowires

Si nanowires were grown on (111) substrates by ultra high vacuum chemical vapor deposition using the Au-catalyzed vapor-liquid-solid (VLS) technique. Depending on the growth temperature, the nanowires can be straight in the <111> direction or kinked towards <112>. We present a transmission electron microscopy investigation of the <112> Si nanowires. Results exhibit the relationship between the morphology of nanowires and the distribution of gold on sidewalls bounding the nanowires. The distribution of Au nanoclusters is used as a probe to investigate the growth mechanisms of the VLS process. Our observations are consistent with the model of nucleation and step flow related to the oscillatory behavior of the catalyst droplet.