Paramagnetic resonance in a “dirty” spin-glass

For a spin-glass with nonmagnetic defects (n _m ^1/3l 1, where n _m is the magnetic impurity concentration and l is the mean free path) an absorption function () is derived. Three ranges of temperature and external magnetic field are considered. In the vicinity of the transition the value of () d is estimated as a function of temperature and field.     

Electrical and magnetic properties of Ni0.8Zn0.2Fe2O4/silica composite prepared by sol-gel method

Ultrafine Ni_0.8Zn_0.2Fe₂O₄ particles dispersed in silica (SiO₂) matrix are produced by sol-gel method. The powders were subjected to X-ray diffraction to confirm the formation of crystalline phases. The physical properties such as bulk density, true density, % of porosity and % of linear shrinkage were studied. The magnetic permeability as the function of frequency from 1 kHz to 13 MHz and temperatures from room temperature to 300°C were studied for samples sintered at temperature 1250°C. The AC electrical resistivity as the function of frequency and DC electrical resistivity as the function of temperature were studied. The AC-resistivity of the order of 10⁵ cm and DC-resistivity 10⁸ cm were obtained at room temperature. Microstructural features of sintered samples show the presence of ferrite grains of 1–2 m size.     

Amplifier based on a field-effect triode with negative current feedback

Conclusions A field-effect triode amplifier with series negative current feedback allows a voltage gain of the order of 200–300 to be obtained for a load resistance R_s1 M. The coefficient K_u begins to decrease noticeably only for a feedback resistance above 500 .The current gain reaches (8–10)·10³. Increasing the resistances R_s and R_L to hundreds of ohms has practically no effect on K_i. For a further increase of R_s and R_L the coefficient K_i decreases.The power gain reaches its maximum value (of the order of 10⁴ or more) for R_s100 and R_L=10–100 k. An increase in R_s leads to a reduction of K_pmax and to a shift of the extremum of the function K_p=f(R_L) into the range of higher values of R_L.A large input resistance of the amplifier (tens of megohms and higher) is obtained when R_s increases to 10–100 M. The maximum input resistance is obtained for R_L and R_s and may exceed values of from hundreds of megohms to several gigaohms. The minimum input resistance is hundreds of kilohms for R_L and R_s0.The minimum input resistance (5–10 k or less) is ensured for R_g and R_L0. An increase of the output resistance to hundreds of megohms or higher occurs for R_g and R_s.Translated from Izmeritel'naya Tekhnika, No. 9, pp. 67–70, September, 1971.     

Thermodynamic properties of superconducting niobium

The thermodynamic properties of superconducting Nb are calculated numerically from the solution of the Eliashberg equations on the imaginary axis for several possible electron-phonon spectral densities ²()F(). Comparison with experiment is made in order to see which spectrum gives the best agreement, and functional derivatives with respect to ²()F() are used to estimate how this agreement might be improved by small changes in ²()F(). Possible gap anisotropy effects are also considered with the help of a simple model anisotropy for the interaction.Research supported by Natural Science and Engineering Research Council of Canada.     

Response of a spinning liquid column to pitch excitation

Summary The response of a solidly rotating liquid bridge consisting of inviscid liquid is determined for pitch excitation about its undisturbed center of mass. Free liquid surface displacement and velocity distribution has been determined in the elliptic (>2₀) and hyperbolic (<2₀) excitation frequency range.List of symbols a radius of liquid column - h length of column - I ₁ modified Besselfunction of first kind and first order - J ₁ Besselfunction of first kind and first order - r, ,z cylindrical coordinates - t time - u, v, w velocity distribution in radial-, circumferential-and axial direction resp. - mass density of liquid - free surface displacement - velocity potential - ₀ rotational excitation angle - ₀ velocity of spin - forcing frequency - _1n natural frequency - surface tension - acceleration potential - for elliptic range >2₀ - for hyperbolic range >2₀     

Axi-symmetric natural frequencies and response of a spinning liquid column under strong surface tension

Summary The response of a solidly rotating anchored finite liquid column consisting of frictionless liquid is subjected to axial harmonic excitation. The response of the free liquid surface elevation and velocity distribution has been determined analytically in the elliptic (>2 ₀) and hyperbolic frequency range (>2 ₀). For the liquid surface displacement the response has been evaluated numerically as a function of the forcing frequency/2 ₀. In addition the first natural stuck-edge frequency has been determined and compared with the slipping case.List of symbols a radius of liquid bridge - h length of liquid bridge - I ₀,I ₁ modified Besselfunctions - J ₀,J ₁ Besselfunctions - p liquid pressure - r, ,z cylindrical polar coordinates - t time - u, v, w velocity distribution in rotating liquid - Weber number - z₀ axial excitation amplitude - elliptic case (>2 ₀) - hyperbolic case (>2 ₀) - liquid density - surface tension - liquid surface displacement - acceleration potential - ₀ rotational speed - axial forcing frequency - natural frequency of rotating system - _0n natural frequency of harmonic axial response     

Surface resistance of large-area Tl2Ba2CaCu2O8 thin films at microwave and millimeter wave frequencies measured by three noncavity techniques

The surface resistanceR _s of Tl₂Ba₂CaCu₂O₈ films fabricated on LaAlO₃ wafers up to 3 inches (7.6 cm) in diameter through a post-deposition anneal process was measured over the frequency range 5.55–94.1 GHz by the following techniques: 5.55 and 27.5 GHz high-temperature superconductor (HTS)-sapphire resonators, 10 GHz parallel plate resonator, and 94.1 GHz scanning confocal resonator.R _s was found to exhibit a quadratic dependence on frequencyf at 77 K:R _s f ^2.0±0.1. The highest-quality films yieldR _s =145±15 at 10 GHz and 77 K. Scanning confocal resonator mapping ofR _s across a 2-inch (5.1 cm) diameter wafer yielded a base value forR _s of 16±1 m at 77 K and 94.1 GHz (equivalent to 180±10 at 10 GHz) and good uniformity inR _s across the wafer. HTS-sapphire resonator measurements ofR _s for fifteen 1.2 cm square parts cut from a 3-inch diameter wafer yieldedR _s values scaled to 10 GHz of 196±10 at 80 K. Similar values were measured for Tl₂Ba₂CaCu₂O₈ films prepared on both sides of a 2-inch diameter wafer.Rs values at 10 GHz and 80 K of 147–214 were maintained over the course of 40 independent and successive deposition runs and corresponding anneals under nominally identical film fabrication conditions. Surface resistance at 5.55 GHz remained below 80 for maximum rf magnetic fields up to 85 Oe at 4.2 K and 7 Oe at 80 K, respectively. Results are compared with predictions of the two-fluid model. The relative advantages and disadvantages of the different techniques for measuring surface resistance are discussed.     

Velocity of second sound and superfluid density near the superfluid transition in3He-4He mixtures

Using superleak condenser transducers, the velocity of second soundU ₂ has been measured near the superfluid transition temperature T in³He-⁴He mixtures with molar concentrationsX of³He of 0.0, 0.038, 0.122, 0.297, and 0.440. We have obtained the superfluid density _s/ fromU ₂ on the basis of linearized two-fluid hydrodynamics. The results for _s/ are consistent with those obtained from the oscillating disk method, as expected from two-fluid hydrodynamics. The value of _s/ at eachX could be expressed by a single power law, _s/=k, where =1-T/R, with the experimental uncertainty. It is found that the exponent is independent of concentration forX0.44 within the experimental uncertainty. This concentration independence of is in agreement with the universality concept. From the conclusion that the values of are universal forX0.44, the concentration dependence of the superfluid component _s is expressed by an empirical equation _s(X, )=²_s(0, ). It is found that corresponds to the volume fraction of⁴He in the superfluid³He-⁴He mixture. The value of is in agreement with that obtained from the measurement of the molar volume by others.This paper is based on a thesis submitted to Tokyo University of Education in partial fulfillment of the requirements for the Ph.D. degree.     

Longitudinal dielectric function and collective surface oscillations in superconductors

The electrodynamic approach to the problem of collective oscillations in superconductors is considered. The kinetic equation for quasiparticles is used to find the longitudinal dielectric function ₁ (, k) of a pure superconductor at ( is the collision frequency). With the help of the evaluated ₁ (, k) the existence of collective oscillations localized near the boundary of the superconductor is investigated.     

Microstructure and properties of (Sr, Ca)CuO2/(Sr, Ca)RuO3 multilayers

Epitaxial multilayer thin films of infinite-layer (Sr, Ca)CuO₂ and perovskite (Sr, Ca)RuO₃ have been prepared on (100) SrTiO₃ substrates by multitarget rf magnetron sputtering. X-ray diffraction analyses revealed that the multilayer structure of (Sr, Ca)CuO₃/(Sr, Ca)RuO₃ was successfully fabricated with a minimum layer thickness of 20 Å. Transmission electron microscopy measurements of the multilayers indicated that there was no dislocation which normally exists in single-layer films with an infinite-layer structure. Resistivities of multilayer films at room temperature ranged from 1 to 10 m cm and showed semiconductor-like dependence against the temperature.     

Microwave surface resistance of epitaxial YBa2Cu3O7 thin films at 18.7 GHz measured by a dielectric resonator technique

We used a dielectric resonator technique for highly sensitive measurements of the temperature dependence of the microwave surface resistanceR _s of 1×1 cm² superconducting films at 18.7 GHz. It consists of a sapphire disc positioned on the film under investigation within a copper cavity which is acting as a radiation shield. In the TE₀₁ oscillation mode the highly reproducible quality factor of about 10⁵ results in a sensitivity of ±50 forR _s measurements. The temperature dependence ofR _s can be measured up to values as high as 1 . We have investigated several YBa₂Cu₃O₇ thin films prepared by high oxygen pressure d.c. sputtering on LaAlO₃ and NdGaO₃. Our best films exhibit a pronounced nonlinear behavior of the d.c. resistivity(T) with(300K)/(100K) values of about 3.7. Those films show, besides the initial fall-off just belowT _c , a further strong decrease ofR _s at low temperatures. This was observed both at 18.7 GHz and 87 GHz, as measured by a conventional cavity end plate replacement technique. ForTT_c/2 these films exhibit an exp (–T _c/T) dependence ofR _s with-values around 0.4. These observations may be explained by a superconducting energy gap with 2/kT _c0.8 for charge carriers localized in the CuO chains for YBa₂Cu₃O₇.     

Temperature and randomness dependence of the pair-breaking parameter in superconducting aluminum films

Magnetoconductance and excess conductance due to superconducting fluctuations in aluminum films are measured in order to study the temperature dependence of the pair-breaking parameter at temperatures nearT _c . The parameter _M is estimated from the relation =/8k _B T_in, where _in is the inelastic scattering time deduced from the analysis of the magnetoconductance. The parameter _F is determined by fitting theories to data on the excess conductance at zero magnetic field. It is shown that: (1) For films with a wide range of the sheet resistanceR , 12R 200 /, the temperature dependence of _M nearT _c agrees well with the theory of Brenig et al. (2) For clean films withR 100 /, the value of _F analyzed with theories including the correction term to the Maki-Thompson contribution shows almost the same temperature dependence as _M . In a film withR 200 /, however, a discrepancy between _M and _F remains.On leave from College of General Education, Kyushu University, Ropponmatsu, Fukuoka, Japan.     

Dynamic scaling and ultrasonic attenuation in 4He near the superfluid transition point

Attenuation of first sound has been measured in ⁴He under saturated vapor pressure near the lambda temperature T at frequencies /2 ranging from 10.2 to 271 MHz. The frequency dependence of the critical part of the attenuation is determined and the dynamic scaling hypothesis is examined. Above the lambda point, it is found that the critical attenuation is described by a scaling function (, ) = ^1+y F(), where = ₀^–x and = T/T – 1, with the results x = 1.02±0.05 and y = 0.33±0.03. The characteristic frequency of the order-parameter fluctuation with the wave number k equal to the inverse correlation length is then proportional to ^x , which is in an excellent agreement with the prediction of dynamic scaling. Below the lambda point, a characteristic relaxation time or times shorter than previously expected at lower frequencies appears to exist in the present frequency range.Based on a Ph.D dissertation submitted by K. Tozaki to the University of Tokyo (1977).     

Wide-band phase-metering frequency transducers with fixed frequency heterodynes

Conclusions It has already been pointed out [3] that the PMFTs with a repeated sequential transformation of frequency in ISSs and restoration of the heterodyne frequency contain a minimum number of transducers (two WBFSs) and provide, only for the condition that <, an adequately small error due to an incomplete suppression of the image frequencies (₁₂) in the WBFSs.Over a wider frequency range (), i.e., at any frequency with the exception of=, the PMFTs operate with the same small errors due to an incomplete suppression of the WBFS image frequencies (₁₂), provided that the ISS contains two WBFSs and an SM, or three WBFSs, and that the reference-signal shaping channel consists of a frequency doubler and k₁=k₂=1.Certain PMFTs which contain an FST at one of the heterodyne outputs [5] (k₂>k₁=1) have even a. wider band. Thus, the PMFTs corresponding to combinations of their component transducers shown in the lines 2, 5, 8, and 11 of Table 1 operate, for any relationship of the frequencies ₁ and k₂, with adequately small errors due to an incomplete supression of the image frequency (₁₂) in the WBFSs.The above error, with the remaining conditions being the same, is minimal (¹²³) in the PMFTs which consist of three WBFSs and have transducer combinations shown in the lines 1 and 3 of Table 1.Bearing in mind that WBFSs can now be made with an image frequency suppression factor of the order of 5·10^–3, the error under consideration of such PMFTs can be of the order of 10^–7 rad or 5·10^–5 degrees, i.e., it can be small as compared with other modern phase-metering devices' error components (due to coupling between channels, presence of higher signal harmonic components, etc).Translated from Izmeritel'naya Tekhnika, No. 1, pp. 21–25, January, 1974.     

Magnetic field dependence of the density of states of YBa2Cu3O6.95: Implications for the vortex structure

The total specific heat of YBa₂Cu₃O_6.95 single crystals includes contributions from phonons and spin-1/2 particles, as well as electronic contributions. The electronic specific heat is described by a quadratic term T² in zero field and a linear term [(0)+(H)]T which is increased when a magnetic field H is applied perpendicular to the CuO₂ planes. In agreement with d-wave superconductivity, we find that _n/T_c and (H)_n(H/H_c2)^1/2, where _n is the coefficient of the normal-state linear term. The H^1/2 dependence of the density of states at the Fermi level was predicted by G. Volovik for lines of nodes in the gap: the quasiparticles which contribute to this density of states are close to the nodes in momentum space and are located outside the vortex core.     

Effect of phase transitions in copper-germanium thin film alloys on their electrical resistivity

An investigation was carried out to study the phase transitions in Cu-Ge thin films (80–200 nm in thickness) containing 0, 5, 15, 20, 25, 30, 35, 40, 45 and 50 at% Ge, and the corresponding effects on electrical resistivity. For these films, the phase transitions were found to follow the sequence: -phase (disordered face centred cubic, fcc, solid solution); 5 at% Ge -phase (disordered hexagonal close packed, hcp); 15 at% Ge -phase + ₁-phase (ordered orthorhombic, Cu₃Ge); 20 at% Ge ₁-phase; 25 at% Ge (₁-phase + progressively increasing proportions of a disordered Ge-rich solid solution); 30–50 at% Ge. Germanium was found to have no marked effect on grain size of all films studied excluding grain boundaries as electron scattering centres. Transition of the -phase into the -phase was found to occur in a highly coherent manner, which could be related to the reduced stacking fault energy of Cu by the addition of Ge. Most evidence pointed out that the initial increase in resistivity within the -phase range was related to hcp scattering centres, which could be associated with a localized high concentration of Ge. At 15 at% Ge, the resistivity reached a maximum value of about 50 cm associated with the complete transformation of -phase into the -phase. With continued increase in Ge concentration, the resistivity was found to gradually decrease reaching a minimum value of about 10 at 25 at% Ge, which was correlated with complete transition of the -phase into the ordered ₁-phase (Cu₃Ge). It was shown that the superlattice of Cu₃Ge could directly be derived from the disordered -phase by minor atom rearrangement on the [0 0 0 1]_hcp plane. Even though, minor proportions of a Ge-rich solid solution containing a small concentration of Cu were formed at Ge concentrations above 25 at%, the minimum resistivity of 10 cm was maintained as the Ge concentration was increased to 35 at%. Subsequently, the resistivity was increased reaching about 46 cm at 50 at% Ge.     

Effect of the Interface Resistance on the Extraordinary Magnetoresistance of Semiconductor/Metal Hybrid Structures

We report on magnetotransport experiments performed at 4.2 K on hybrid structures consisting of a metal and a mesoscopic two-dimensional electron system in an InAs/InGaAs heterostructure. The devices were fabricated using cleaved-edge overgrowth. We find that they exhibit an extraordinary magnetoresistance effect (EMR) which is most pronounced in the case of the lowest specific contact resistance _i of 10^–8 cm² achieved in this work. The largest relative resistance change R/R is 115,000% at a magnetic field B = 1 T. A systematic study of the performance of the EMR devices with down to sub-m lateral dimension and with different _i is reported.     

Epitaxial growth and properties of (CO3) stabilised BaCuO2 superconducting thin films

We report on the epitaxial growth of BaCuO₂ infinite layer (stabilised with CO₃ groups) thin films by rf magnetron sputtering on (100) SrTiO₃ and (100) LaAlO₃. Excellent (001) films with c4Å are obtained at 540 °C in a sputtering atmosphere of 1–10 mTorr of Ar+O₂ with some addition of CO₂. Off axis x-ray analysis reveal perfect in plane ordering and a tetragonal structure with a=b3.96 Å. For these deposition conditions the resistivity at room temperature is of the order of several cm and exhibits a strong semiconductor-like behaviour. When the deposition temperature is increased to 660 °C, a supercell along the c axis appears with a period of about 8Å. After an in-situ annealing of these films in 7 Torr of oxygen at 500 °C, (300K) falls to 800cm. The resistance versus temperature curve reveals then a metallic behaviour and a superconducting transitions with onsets between 10–40K.     

Electron-phonon coupling as a mechanism for high-temperature superconductivity

We have solved the Eliashberg gap equations which are valid for arbitrary phonon frequency, (_ph), electron-phonon coupling constant, (), and screened Coulomb interaction, ( ^*). We have used values of (_ph),, and ( ^*) appropriate to the cuprate superconductors, and calculated the density of states, the pair potential., and the value of the gap at T=0 K. Using the linearized Eliashberg equations in the matrix representation, we have calculatedT _c and 2/k T _c . We have found that we can account for the highT _c 's in the cuprates with reasonable values for, ^*, and _ph.