Si纳米线及其器件研究进展

Si纳米线是一种非常重要的一维半导体纳米材料,在纳米器件方面有很好的应用前景。综述了Si纳米线的一些重要制备方法:激光烧蚀法、模板法、化学气相生长法、热蒸发法,简要介绍了各种制备方法过程并分析各种方法制备纳米线的优缺点。还介绍了Si纳米线所制备纳米器件的电学、电子输运等特性,说明了掺硼、掺磷纳米线分别具有p型、n型半导体特征。最后介绍了Si纳米线在电子器件、纳米线电池、传感器方面的相关应用。     

锗纳米线的性能与应用

重点分析讨论了锗纳米线在电学、光学、光电导等特性及其在场效应晶体管制造方面的研究应用现状与最新进展。综合分析表明,未经处理的锗纳米线表面存在一层氧化物及缺陷,与电极连接时欧姆接触性能较差,在制备锗纳米线器件以前必须对锗纳米线表面进行钝化以便沉积电极;对锗纳米线进行掺杂可以改善Ge纳米线的性能,制造出实用Ge纳米线器件。指出在一根纳米线上生长硅/锗半导体纳米线形成硅/锗半导体界面,直接用单根纳米线制造具有完整功能的电子器件是将来重要的研究方向。     

硅基Ⅲ-Ⅴ族纳米线及其若干半导体器件

综述了硅基Ⅲ-Ⅴ族纳米线与异质结制备技术的研究进展.针对基于Ⅲ-Ⅴ族纳米线的半导体器件,重点介绍了硅基Ⅲ-Ⅴ族纳米线场效应晶体管的研究现状,详细介绍了硅基Ⅲ-Ⅴ族纳米线场效应晶体管和隧穿场效应晶体管的制备流程、工艺技术和器件的电学性能,并对影响器件电学性能的因素进行了分析.概括介绍了硅基Ⅲ-Ⅴ族纳米线激光器和硅基Ⅲ-Ⅴ族纳米线太阳电池的研究成果,基于硅衬底的Ⅲ-Ⅴ族纳米线太阳电池为低成本、高效能的太阳电池领域开辟了新途径.研究结果表明,采用硅基Ⅲ-Ⅴ族纳米线制备的场效应晶体管、激光器及太阳电池等半导体器件相对于Si,Ge等传统半导体材料制备的器件有着巨大的优势,在未来集成电路技术中具有越来越大的影响力.     

锗纳米线的性能与应用

重点分析讨论了锗纳米线在电学、光学、光电导等特性及其在场效应晶体管制造方面的研究应用现状与最新进展。综合分析表明,未经处理的锗纳米线表面存在一层氧化物及缺陷,与电极连接时欧姆接触性能较差,在制备锗纳米线器件以前必须对锗纳米线表面进行钝化以便沉积电极;对锗纳米线进行掺杂可以改善Ge纳米线的性能,制造出实用Ge纳米线器件。指出在一根纳米线上生长硅/锗半导体纳米线形成硅/锗半导体界面,直接用单根纳米线制造具有完整功能的电子器件是将来重要的研究方向。     

纳米多孔铝的制备技术及应用

介绍了阳极氧化方法制备纳米多孔铝的技术。阳极氧化多孔铝由于孔径可以控制在纳米尺度,因而在半导体纳米线料的制备方面具有广泛的用途。     

直流电沉积制备一维ZnSe半导体纳米材料

用二次阳极氧化法制备了多孔阳极氧化铝(AAO)模板。以AAO为模板,在ZnSO4、Na2SO4和H2SeO3的混合水溶液中进行直流电沉积了ZnSe半导体纳米线。SPM、TEM测试表明,模板表面形成模孔大小一致、排列规则的阵列。ZnSe纳米线的直径约为60nm,长度约为0.5μm并与模板的孔径和深度一致。在制备过程中,无需去除AAO的基底,喷金或预镀金属等处理,直接在AAO纳米孔内电沉积,制备纳米线。该方法简单、有效并且容易获得有序的半导体纳米线阵列。     

技术动态

美科学家成功将化合物半导体纳米线整合在硅晶圆上美国科学家首次成功地将化合物半导体纳米线整合在硅晶圆上,攻克了用这种半导体制造太阳能电池会遇到晶     

硅纳米线纳米器件的研究进展

硅纳米线作为一类重要的一维半导体纳米材料,在纳米器件方面具有很好的应用前景,可以用于高性能场效应晶体管、单电子探测器和场发射显示器件等纳米器件的制备.介绍了近两年来硅纳米线作为检测细胞、葡萄糖、过氧化氢、牛类血清蛋白和DNA杂交方面的纳米传感器、纳米晶体管、光电探测器等纳米器件的最新进展,并对其研究前景做了展望.     

零维和一维半导体纳米结构

介绍了几种零维和一维无机半导体纳米结构的制备及其应用。其中,零维无机半导体纳米结构以Si,Ge量子点为代表,一维无机半导体纳米结构以碳纳米管、硅纳米线、氧化锌纳米线和氮化镓纳米结构为代表,介绍了它们的制备和应用研究动态;最后分析了纳米技术的研究和抢占技术制高点的重要性。     

硅纳米线用于纳米器件前的准备工序

硅纳米线是一种新型半导体光电材料,具有量子限制效应并且能与目前的硅芯片相兼容,是一种很有前途的适用于纳米器件的材料,未经处理的硅纳米线存在大量的晶体缺陷以及表面氧化物保护层,直接将这样的硅纳米线应用于纳米器件中时,表面氧化层的保护作用使硅纳米线在电子器件中应用时不能有效地实现欧姆接触,因此对硅纳米线使用前的前期处理是非常必要的。本文主要针对硅纳米线应用于电子器件的准备工序包括为制备完整硅纳米线晶体结构而进行的减少缺陷处理、避免硅纳米线团聚而进行的分散处理,以及使硅纳米线具有有效欧姆接触而进行的表面金属离子处理等作系统的阐述。     

Tunable Near‐Infrared Organic Nanowire Nanolasers

Organic semiconductor nanowires have inherent advantages, such as amenability to low‐cost, low‐temperature processing, and inherent four‐level energy systems, which will significantly contribute to the organic solid‐state lasers (OSSLs) and miniaturized laser devices. However, the realization of near‐infrared (NIR) organic nanowire lasers is always a big challenge due to the difficultly in fabrication of organic nanowires with diameters of ≈100 nm and material issues such as low photoluminescence quantum efficiency in the red‐NIR region. What is more, the achievement of wavelength‐tunable OSSLs has also encountered enormous challenge. This study first demonstrates the 720 nm NIR lasing with a low lasing threshold of ≈1.4 µJ cm^?2 from the organic single‐crystalline nanowires, which are self‐assembled from small organic molecules of (E )‐3‐(4‐(dimethylamino)‐2‐methoxyphenyl)‐1‐(1‐hydroxynaphthalen‐2‐yl)prop‐2‐en‐1‐one through a facile solution‐phase growth method. Notably, these individual nanowires' Fabry–Pérot cavity can alternatively provide the red‐NIR lasing action at 660 or 720 nm from the 0–1 or 0–2 radiative transition channels, and the single (660 or 720 nm)/dual‐wavelength (660 and 720 nm) laser action can be achieved by modulating the length of these organic nanowires due to the intrinsic self‐absorption. These easily‐fabricated organic nanowires are natural laser sources, which offer considerable promise for coherent light devices integrated on the optics microchip.     

Low threshold distributed Bragg reflector surface emitting laser diode with semiconductor air-bridge-supported top mirror

A surface emitting laser diode (SELD) with two distributed Bragg reflectors (DBR) and semiconductor multilayer air-bridge-supported top mirror is fabricated. A low threshold current of 1.5 mA is achieved under room temperature CW operation. The spectrum shows a strong peak at 891 nm with a FWHM of 10 AA. With light emission from the top Bragg reflector instead of from the back side of the substrate, laser arrays are easily formed with this novel structure.<>     

Flexible ultraviolet photodetectors based on ZnO-SnO2 heterojunction nanowire arrays

A ZnO-SnO2 nanowires (NWs) array,as a metal oxide semiconductor,was successfully synthesized by a near-field electrospinning method for the applications as high performance ultraviolet photodetectors.Ultraviolet photodetectors based on a single nanowire exhibited excellent photoresponse properties to 300 nm ultraviolet light illumination including ultrahigh Ion/Ioff ratios (up to 103),good stability and reproducibility because of the separation between photo-generated electron-hole pairs.Moreover,the NWs array shows an enhanced photosensing performance.Flexible photodetectors on the PI substrates with similar tendency properties were also fabricated.In addition,under various bending curvatures and cycles,the as-fabricated flexible photodetectors revealed mechanical flexibility and good stable electrical properties,showing that they have the potential for applications in future flexible photoelectron devices.     

On the structure of InSb nanowires in the channels of chrysotile asbestos

The crystal structure of ultrathin InSb nanowires fabricated by an injection of the molten semiconductor into the channels of chrysotile asbestos is studied. It is shown that the nanowire structure is polycrystalline. The average crystallite size is comparable to the nanowire diameter and corresponds to 4.4 nm.     

ZnO纳米线光学特性测试的倏逝波耦合

使用纳米氧化硅光纤探针,利用倏逝波耦合方法,将紫外到红外的激光成功地耦合进单根ZnO纳米线,耦合效率可达25%.实验观测了单根纳米线的荧光特性,发现ZnO纳米线光传输损耗很低.研究证明:采用透镜聚焦激发纳米线发光的传统耦合方法,只能使用特殊激发波长的光;而倏逝波耦合方法具有高效、适用性强的特点,在半导体纳米线和纳米带的光学特性研究中有广泛的应用前景.     

Nanowire Transistor Performance Limits and Applications

Semiconductor nanowires represent unique materials for exploring phenomena at the nanoscale. Developments in nanowire growth have led to the demonstration of a wide range of nanowire materials with precise control of composition, morphology, and electrical properties, and it is believed that this excellent control together with small channel size could yield device performance exceeding that obtained using top–down techniques. Here, we review advances in chemically synthesized semiconductor nanowires as nanoelectronic devices. We first introduce basic nanowire field-effect transistor structures and review results obtained from both p- and n-channel homogeneous composition nanowires. Second, we describe nanowire heterostructures, show that by using nanowire heterostructures, several limiting factors in homogeneous nanowire devices can be mitigated, and demonstrate that nanowire transistor performance can reach the ballistic limit and exceed state-of-the-art planar devices. Third, we discuss basic methods for organization of nanowires necessary for fabricating arrays of device and circuits. Fourth, we introduce the concept of crossbar nanowire circuits, discuss results for both transistor and nonvolatile switch devices, and describe unique approaches for multiplexing/demultiplexing enabled by synthetically coded nanowire. Fifth, we discuss the unique application of thin-film nanowire transistor arrays on low-cost substrates and illustrate this with results for relatively high-frequency ring oscillators and completely transparent device arrays. Finally, we describe 3-D heterogeneous integration that is uniquely enabled by multifunctional nanowires within a bottom–up approach.      

An Evanescent Coupling Approach for Optical Characterization of ZnO Nanowires

使用纳米氧化硅光纤探针,利用倏逝波耦合方法,将紫外到红外的激光成功地耦合进单根ZnO纳米线,耦合效率可达25%.实验观测了单根纳米线的荧光特性,发现ZnO纳米线光传输损耗很低.研究证明:采用透镜聚焦激发纳米线发光的传统耦合方法,只能使用特殊激发波长的光;而倏逝波耦合方法具有高效、适用性强的特点,在半导体纳米线和纳米带的光学特性研究中有广泛的应用前景.     

A Fully Transparent and Flexible Ultraviolet–Visible Photodetector Based on Controlled Electrospun ZnO‐CdO Heterojunction Nanofiber Arrays

It is essential for novel photodetectors to show good photoresponses, high stability, and have facile fabrication methods. Herein, an optimized electrospinning method to fabricate a photodetector based on nanowire arrays that has a wide spectral response range is demonstrated. Arrays of ZnO‐CdO hybrid nanowires are carefully fabricated fusing ZnO and CdO portions into the same nanowires and subsequently assembling those nanowires into a regular structure. Compared to pure ZnO or CdO nanowire arrays, the hybrid arrays show comparable photocurrent/dark current ratios and response speeds, but they possess a much wider spectral response range from ultraviolet to visible light. The optoelectronic and electronic properties of the ZnO‐CdO hybrid nanowire arrays are systematically explored. Based on this, a transparent and flexible photodetector made of ZnO‐CdO hybrid nanowire arrays is fabricated. It shows a high transparency of around 95% in the spectral range of 400–800 nm and maintains its properties even after 200 bending cycles. Importantly, the developed, simple method can be directly applied to many types of substrates and a transfer of the nanowires becomes unnecessary, which guarantees a high quality of the devices.     

带隙渐变纳米线的光电导淬灭效应

采用气相沉积温度梯度分布合成纳米线法,在750～950℃耐高温石英管中,在催化剂金的催化作用下,生长出310μm带隙渐变的硫硒化镉半导体纳米线,并利用倏逝波耦合的方法导波激发,分别对不同掺杂比例的部分纳米线进行研究。实验发现,在注入功率低于10-8 W时,随着光强增大不同带隙宽度的纳米线的淬灭度都在增大;然而在注入功率继续增大时,S元素比例占到90%的纳米线的淬灭度峰值最早到来,以Se元素为主的纳米线的淬灭度峰值在10-6 W注入光下仍未出现,原因是增加S元素会使更多的复合中心转变为陷阱能级中心,更多的电子可以跃迁至导带。封装上电极的带隙渐变纳米线可应用于制作高分辨率的红外光探测器,也为有效检测半导体材料的缺陷能级提供了便利。