二维材料Ti3C2TxMXene对氨气的气敏性能

气体传感器在疾病诊断和环境监测等应用中受到了广泛关注,二维材料为制备室温下工作的气体传感器提供了一个很有前景的平台。利用HF溶液腐蚀Ti₃AlC₂粉末获得的原始Ti₃C₂T_x粉末和Ti₃C₂T_x纳米片,利用扫描电子显微镜(SEM)图、X射线光电子能谱(XPS)和气敏特性分析,研究了Ti₃C₂T_x材料结构对氨气(NH₃)气敏特性的影响。SEM结果表明,与原始Ti₃C₂T_x粉末相比,Ti₃C₂T_x纳米片具有较薄的厚度,尺寸也较为均匀一致,且成膜性良好。气敏性能结果表明,Ti₃C₂T_x纳米片传感器具有更高的灵敏度,对体积分数2×10     

MOCVD法生长二维范德华材料的研究进展

二维范德华材料凭借其优异的光学和电学特性,自被发现以来一直作为延续集成电路摩尔定律的重要基础电子材料而备受关注.通过机械剥离的方法得到高质量的二维材料进行实验室层面的研究工作已经不能满足现阶段的需要.采用金属有机化学气相沉积(MOCVD)技术可以得到高质量的大面积二维范德华材料,并具有生长层数和成核密度可控的优势.以过渡金属硫化物(TMDC)为例,分别从生长条件、金属有机源材料、衬底、催化剂等方面综述了采用MOCVD技术生长二维范德华材料的研究进展,同时讨论了二维材料的范德华异质结构的特性及应用.利用MOCVD技术优势可以推动二维范德华材料的大规模应用.最后总结了 MOCVD法生长二维范德华材料现阶段的优势与不足,并对其未来的发展进行了展望.     

基于2,6NDC的二维纳米阵列MOF材料的制备及其在超级电容器中的应用

金属有机框架(MOF)具有比表面积较大、形貌多样和金属中心丰富等优点。然而传统的以对苯二甲酸(BDC)为配体的MOF直接用作超级电容器电极材料时其比电容低、稳定性差。为此以双苯环有机配体2,6萘二羧酸(2,6NDC)为链接剂,采用简单高效的一步溶剂热法成功合成了超薄片状2D纳米阵列2,6NDC MOF材料,对其物相结构和表面形貌进行了表征分析,并探究了其电化学性能。结果表明,在电流密度为1 A·g^-1下,基于2,6NDC的超薄片状2D纳米阵列MOF具有较高的比电容,为136.2 F·g^-1,而以BDC为配体的MOF比电容只有53.9 F·g^-1。以2,6NDC MOF构筑的超级电容器在电流密度0.5 A·g^-1下的能量密度为28.2 W·h·kg^-1,功率密度为1 650.7 W·kg^-1,且在15 000次循环后依然有约125%的初始放电比容量,显示出优异的循环稳定性。     

超级电容器电极材料研究最新进展

超级电容器是介于传统电容器与化学电源之间的一种新型储能元件,它具有充电时间短、循环寿命长、功率特性好、温度范围宽和经济环保等优势,目前在很多领域都受到广泛关注。概述了超级电容器电极材料研究的最新进展,包括碳基材料、金属氧化物材料及导电聚合物材料等,并在此基础上对其未来发展趋势进行了展望。     

超级电容器用碳基电极材料研究进展

超级电容器作为一种绿色储能体系,在新型能量存储和转化系统发展过程中扮演着重要的角色。综述了超级电容器商业化应用的发展历史,介绍了超级电容器的分类、储能原理和两种电化学性能测试体系,重点阐述了三种改善碳基电极材料性能的思路:结构多孔化、尺度纳米化和材料复合化,展望了碳基电极材料的发展方向。     

(CoFe)Se2@NC超级电容器电极材料的制备及其电化学性能

金属-有机框架(MOF)衍生的过渡金属硒化物和多孔碳纳米复合材料具有巨大的储能优势,是应用于电化学储能的优良电极材料。采用共沉淀法制备CoFe类普鲁士蓝(CoFe-PBA)纳米立方,并通过静电组装在CoFe-PBA上包覆聚吡咯(PPy)得到CoFe-PBA@PPy;通过在400℃氮气中退火并硒化成功制备了氮掺杂的碳(NC)包覆(CoFe)Se₂的(CoFe)Se₂@NC纳米复合材料,并对其结构和形貌进行了表征。以(CoFe)Se₂@NC为电极制备了超级电容器,测试了其电化学性能,结果表明,在电流密度1 A/g时超级电容器的比电容达到1047.9 F/g,在电流密度5 A/g下1000次循环后具有良好的循环稳定性和96.55%的比电容保持率。由于其性能优越、无毒、成本低和易于制备,未来(CoFe)Se₂@NC纳米复合材料在超级电容器中具有非常大的应用潜力。     

超级电容器用氧化钌及其复合材料的研究进展

介绍了超级电容器(亦称电化学电容器)中赝电容器的工作原理和特点。对性能较好的电极材料氧化钌及其复合材料进行分类。综述了近年来其制备和应用进展,并针对氧化钌材料的高成本,提出解决方法和建议。最后对氧化钌材料的发展前景作了展望。     

CaMoO4/GO复合材料的制备及其超级电容器性能

采用水热法成功合成了CaMoO₄/氧化石墨烯(GO)纳米复合材料。通过材料的表面形貌、晶体结构和电化学性能研究合成的纳米复合材料。结果表明,CaMoO₄/GO电极在电流密度0.5 A/g时比电容高达571.82 F/g,并且在1 A/g的电流密度下,经过1000次循环后的比电容保持率仍为84%。为了测试电极材料的实际应用效果,全固态超级电容器(ASC)分别使用CaMoO₄/GO和活性炭(AC)作为正极和负极进行组装。组装的ASC在功率密度1710.3 W/kg下显示出25.18 W·h·kg^-1的能量密度,并且能通过串联4个ASC为红色发光二极管供电。上述结果表明CaMoO₄/GO电极材料在高性能储能设备的应用中具有非常大的潜力。     

超级电容器电极材料VS4@PPy的制备及其电化学性能

探索具有优异电化学性能的电极材料是推进超级电容器发展的关键,设计优化过渡金属硫化物并研究其电化学性能对超级电容器的发展和应用至关重要.具有多种不同形貌的VS4正是研究重点之一.采用简单的一步水热法制备了花状VS4纳米材料,通过原位氧化聚合法在VS4上包覆聚吡咯(PPy),得到VS4@PPy纳米复合材料.PPy出色的导电...     

Stamping of Flexible,Coplanar Micro‐Supercapacitors Using MXene Inks

The fast growth of portable smart electronics and internet of things have greatly stimulated the demand for miniaturized energy storage devices. Micro‐supercapacitors (MSCs), which can provide high power density and a long lifetime, are ideal stand‐alone power sources for smart microelectronics. However, relatively few MSCs exhibit both high areal and volumetric capacitance. Here rapid production of flexible MSCs is demonstrated through a scalable, low‐cost stamping strategy. Combining 3D‐printed stamps with arbitrary shapes and 2D titanium carbide or carbonitride inks (Ti₃C₂T_x and Ti₃CNT_x, respectively, known as MXenes), flexible all‐MXene MSCs with controlled architectures are produced. The interdigitated Ti₃C₂T_x MSC exhibits high areal capacitance: 61 mF cm^?2 at 25 µA cm^?2 and 50 mF cm^?2 as the current density increases by 32 fold. The Ti₃C₂T_x MSCs also showcase capacitive charge storage properties, good cycling lifetime, high energy and power densities, etc. The production of such high‐performance Ti₃C₂T_x MSCs can be easily scaled up by designing pad or cylindrical stamps, followed by a cold rolling process. Collectively, the rapid, efficient production of flexible all‐MXene MSCs with state‐of‐the‐art performance opens new exciting opportunities for future applications in wearable and portable electronics.     

六方氮化硼在二维晶体微电子器件中的应用与进展

六方氮化硼(h-BN)因其优异的性能和潜在的应用前景而受到广泛关注.着眼于h-BN在微电子器件领域中的发展与应用,总结了近年来国内外通过化学气相沉积(CVD)方法实现h-BN的高质量、大规模可控制备及图形化的代表性工作.围绕h-BN的高介电常数、原子级平滑表面、高导热性和高稳定性,重点介绍了h-BN在二维晶体介电衬底、...     

Synthesis and Characterization of 2D Molybdenum Carbide (MXene)

Large scale synthesis and delamination of 2D Mo₂CT _x (where T is a surface termination group) has been achieved by selectively etching gallium from the recently discovered nanolaminated, ternary transition metal carbide Mo₂Ga₂C. Different synthesis and delamination routes result in different flake morphologies. The resistivity of free‐standing Mo₂CT _x films increases by an order of magnitude as the temperature is reduced from 300 to 10 K, suggesting semiconductor‐like behavior of this MXene, in contrast to Ti₃C₂T _x which exhibits metallic behavior. At 10 K, the magnetoresistance is positive. Additionally, changes in electronic transport are observed upon annealing of the films. When 2 μm thick films are tested as electrodes in supercapacitors, capacitances as high as 700 F cm^?3 in a 1 m sulfuric acid electrolyte and high capacity retention for at least 10,000 cycles at 10 A g^?1 are obtained. Free‐standing Mo₂CT _x films, with ≈8 wt% carbon nanotubes, perform well when tested as an electrode material for Li‐ions, especially at high rates. At 20 and 131 C cycling rates, stable reversible capacities of 250 and 76 mAh g^?1, respectively, are achieved for over 1000 cycles.     

Controlled Assembly of MXene Nanosheets as an Electrode and Active Layer for High-Performance Electronic Skin

MXenes are an emerging class of 2D transition metal carbides and nitrides. They have been widely used in flexible electronics owing to their excellent conductivity, mechanical flexibility, and water dispersibility. In this study, the electrode and active layer applications of MXene materials in electronic skins are realized. By utilizing vacuum filtration technology, few-layer MXene electrodes are integrated onto the top and bottom surfaces of the 3D polyacrylonitrile (PAN) network to form a stable electronic skin. The fabricated flexible device with Ti₃C₂T_x MXene electrodes outperforms those with other electrodes and exhibits excellent device performance, with a high sensitivity of 104.0 kPa⁻¹, fast response/recovery time of 30/20 ms, and a low detection limit of 1.5 Pa. Furthermore, the electrode and the constructed MXene/PAN-based flexible pressure sensor exhibit robust mechanical stability and can survive 240 bending cycles. Such a robust, flexible device can be enlarged or folded like a jigsaw puzzle or origami and transformed from 2D to 3D structures; moreover, it can detect tiny movements of human muscles, such as movements corresponding to sound production and intense movements during bending of fingers.     

MXene Electrode for the Integration of WSe2 and MoS2 Field Effect Transistors

Recently, MXenes, which are 2D early transition metal carbides and carbonitrides, have attracted wide attention because of their excellent conductivities. Here, the electrode applications of Ti₂C(OH)_xF_y, one member of the MXene family, in WSe₂ and MoS₂ field effect transistors (FETs) are assessed. Kelvin probe force microscopy analysis is performed to determine its work function, which is estimated to be ≈4.98 eV. Devices based on WSe₂/Ti₂C(OH)_xF_y and MoS₂/Ti₂C(OH)_xF_y heterostructures are fabricated with the mechanical transfer method and their electronic performances evaluated. The temperature‐dependent current–voltage transfer characteristics of the devices are determined to extract their Schottky barrier heights. The hole barrier between WSe₂ and Ti₂C(OH)_xF_y is estimated to be ≈0.23 eV and the electron barrier between the MoS₂ band and Ti₂C(OH)_xF_y is ≈0.19 eV, which indicates that the pinning effect occurs at the MoS₂/Ti₂C(OH)_xF_y interface but not at the WSe₂/Ti₂C(OH)_xF_y interface; this difference arises because of the difference between the band structures of WSe₂ and MoS₂. A complementary metal–oxide–semiconductor inverter based on these electrode properties of Ti₂C(OH)_xF_y with MoS₂ (n‐channel) and WSe₂ (p‐channel) is fabricated, which demonstrates that Ti₂C(OH)_xF_y is a promising electrode for future nanoelectronics applications.     

先进复合材料在雷达上的应用和前景

随着雷达技术的发展,对应用先进复合材料的研究提出了迫切需求。先进复合材料拥有轻质、高比强度、高比模量和低热膨胀系数等优异特性,是实现阵列天线罩、轻质CFRP天线、馈源等雷达重要部件的有效途径。本文讨论了先进复合材料在雷达中应用的特点,介绍了国内外现状,并对其发展提出了一些观点和建议。     

Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two-Dimensional and Oxide/Two-Dimensional Transition Metal Dichalcogenide Diodes

Among many of 2D semiconductor-based devices, type III PN junction diodes are given special attentions due to their unique function, negative differential resistance (NDR). However, it has been found uneasy to achieve well-matched type III PN junctions from 2D–2D van der Waals heterojunctions. Here, the authors present other alternatives of type III heterojunctions, using 2D p-MoTe₂/organic n-type dipyrazino[2,3-f:2′,3′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN) and 2D p-WSe₂/n-MoO_x systems. Those junction diodes appear to well-demonstrate static and dynamic NDR behavior via resonant tunneling and electron–hole recombination. Extended to an inverter circuit, p-MoTe₂/n-HAT-CN diode enables multilevel inverter characteristics as monolithically integrated with p-MoTe₂ channel field effect transistor. The same NDR diode shows dynamic LC oscillation behavior under a constant DC voltage, connected to an external inductor. From p-WSe₂/n-MoO_x oxide diode, similar NDR behavior to those of p-MoTe₂/n-HAT-CN is again observed along with LC oscillations. The authors attribute these visible oscillation results to high peak-to-valley current ratios of their organic or oxide/2D heterojunction diodes.     

Progress,Challenges, and Opportunities for 2D Material Based Photodetectors

2D material based photodetectors have attracted many research projects due to their unique structures and excellent electronic and optoelectronic properties. These 2D materials, including semimetallic graphene, semiconducting black phosphorus, transition metal dichalcogenides, insulating hexagonal boron nitride, and their various heterostructures, show a wide distribution in bandgap values. To date, hundreds of photodetectors based on 2D materials have been reported. Here, a review of photodetectors based on 2D materials covering the detection spectrum from ultraviolet to infrared is presented. First, a brief insight into the detection mechanisms of 2D material photodetectors as well as introducing the figure‐of‐merits which are key factors for a reasonable comparison between different photodetectors is provided. Then, the recent progress on 2D material based photodetectors is reviewed. Particularly, the excellent performances such as broadband spectrum detection, ultrahigh photoresponsivity and sensitivity, fast response speed and high bandwidth, polarization‐sensitive detection are pointed out on the basis of the state‐of‐the‐art 2D photodetectors. Initial applications based on 2D material photodetectors are mentioned. Finally, an outlook is delivered, the challenges and future directions are discussed, and general advice for designing and realizing novel high‐performance photodetectors is given to provide a guideline for the future development of this fast‐developing field.