CVD金则石薄膜的成核机理研究

利用热丝化学气相沉积，在预觉 无定形碳的硅镜面基底及表面研磨预处理的铜基底上，实现了金刚石膜的沉积，并由此讨论了金刚石的成核机理。研究表明，无定形碳是金刚石成核的前驱态；成核密度不仅与基底材料有关，更主要由基底的表面状态决定，基底表面状态的设计进改善成核密度的最有效的方法。     

MPCVD法在氧化铝陶瓷上的金刚石膜沉积及其成核分析

用微波等离子体化学气相沉积（ＭＰＣＶＤ）法在氧化铝陶瓷基片上沉积了金刚石薄膜。实验表明，对基片进行适当的预处理，包括用金刚石研磨膏仔细研磨和沉积前原位沉积一层无定形碳层，可显著提高成核密度；对硅衬底和氧化铝基片上金刚石膜的成核过程进行了对比分析，并提出了提高氧化铝基片上沉积金刚石的成核的措施。     

预沉积无序碳对CVD金刚石成膜的增强作用

研究了热丝ＣＶＤ系统中预沉积无定形碳对金属石成核的促进作用，分析了金 不管不顾民核的特征和机理，探索了无定形碳上金刚石成核的条件，并由此实现了ＹＧ８硬质合金上金刚石的成核和生长。     

CVD金刚石成核的最新研究

研究了化学气相条件下金刚石在非均匀研磨硅基底表面及镜面基底和均匀研磨基底边缘及角域处的成核行为。发现ＣＶＤ金刚石成核不仅依赖于沉积区缺陷，更主要由缺陷的锐度决定，即缺陷加强ＣＶＤ金刚石成核的锐度效应。在对无序碳上ＣＶＤ金刚石成核研究的基础上，讨论了ＣＶＤ金刚石成核的机理，并由此阐明了各种表面预处理及负偏压等增强ＣＶＤ金刚石成核的微观过程。     

燃焰法沉积金刚石薄膜的实验研究

研究分析了燃焰法沉积金刚石薄膜时基片表面处理状态，燃烧气体流量比基片温度对薄膜成核密度、质量和晶体形态的影响。结果表明，在不同粒度的研磨粉研磨的基片表面上金刚石薄膜成核密度不同；燃烧气体流量配比对金刚石薄膜的质量影响很大；基片温度是影响金刚石薄膜晶体形态的一个重要因素。     

金刚石晶粒和薄膜的侧向沉积

将传统的灯丝热解化学气相沉积系统改装成侧向沉积系统，并在其中进行了金刚石薄膜的正、侧向沉积。研究表明，侧向沉积的成核密度和生长度与正向沉积的情况基本相同，崦侧向沉积系统中金刚石颗粒和薄膜的沉积速率要比传统的沉积系统的高，但结构更趋复杂。讨论服基底对金刚石成核和生长过程的影响，深化了厂金刚石沉积机理的理解。     

硬质合金YG8上金刚石薄膜的成核研究

利用调节基底表面碳流量的方法促进了热丝ＣＶＤ中硬质合金ＹＧ８上金刚石薄膜的成核，使成核期大为缩短，根据扫描电镜和拉曼光谱对沉积结果的分析，研究了ＹＧ８上金刚石薄膜成核的机理。     

硬质合金YG8上金刚石薄膜的成核研究

利用调节基底表面碳流量的方法促进了丝ＣＶＤ中硬质合金ＹＧ８上金刚石薄膜的成核，使成核期大为缩短，根据扫描电镜和拉曼光谱对沉积结果的分析，研究了ＹＧ８上金刚石薄膜成核的机理。     

杆状氧化铍表面金刚石薄膜的生长

利用一种新型线形微波等离子体源以甲烷和氢气为反应气体在135 mm×1 mm×0.5 mm杆状氧化铍表面沉积金刚石膜。研究了氧化铍基底预处理对金刚石形核密度和膜的连续性,以及基底温度对金刚石质量的影响。通过扫描电镜、拉曼光谱对沉积的金刚石膜表面形貌以及质量进行表征。实验结果表明:600#砂纸与金刚石粉混合预处理可以大大提高氧化铍表面金刚石的形核密度,得到连续性较好的金刚石薄膜;同时,基底温度不仅影响着金刚石膜的表面形貌,也影响着金刚石膜的质量。基底温度较低时,金刚石膜在沉积过程中二次形核增强,非金刚石相含量较高;提高沉积温度后,等离子体中H原子浓度增加,有利于金刚石质量的提高。     

基片表面处理对金刚石成核密度影响的研究

为了研究基片的表面状态对金刚石成核密度的影响，采用了抛光清洁的基片、对样品划痕、基片加热脱附等不同的表面处理方法，对样品表面进行预处理，得到了不同表面处理条件下的金刚石成核密度。尝试了在低真空（10－1Pa量级）条件下，去除表面的氧化硅及吸附活性的含碳原子，以提高金刚石的成被密度，得到了较理想的结果，成核密度为109／cm2。     

Surface activation pre-treatments for NCD films grown by HFCVD

The control of the nucleation density is essential for the production of ultra-thin, continuous and well adhered nanocrystalline diamond coatings. Surface pre-treatments such as abrasive scratching with diamond powder or bias enhanced nucleation are commonly used methods. In this work, surface activation by a pre-growth step is done using the hot-filament chemical vapour deposition (HFCVD) technique prior to seeding with diamond. The Si surface is modified during exposure to typical CVD diamond growth conditions. After ultrasonication with suspension of diamond in ethanol or n-hexane, an amorphous carbon layer is revealed at the surface of the Si substrates. The densest NCD films were obtained for the surface activation step done using a lower temperature and poorer methane mixture due to the improved seeding allowed by the amorphous carbon layer. Intermediate growth temperature of 750 °C resulted in high nucleation density while lower temperatures decrease it and higher ones produce a DLC nanostructured layer along with moderate NCD nucleation density.     

电化学法预处理硅基片提高金刚石成核密度的研究

通过用电化学法预先沉积一层碳膜的方法，利用热丝化学汽相沉积法使金刚石在光滑硅片上的成核密度达到１０７ｃｍ－２左右，与未镀碳膜相比提高了近３个数量级。文中还分析了可能的原因。     

铁基底上扩散感应的CVD金刚石成核

在硅和铁基底上同时进行ＣＶＤ 金刚石的沉积,利用硅基底上的金刚石成核感应金刚石在铁基底上直接成核。研究表明,硅和铁基底上不同的沉积过程导致了铁基底上碳原子表面扩散的加强,从而促成了ＣＶＤ 金刚石在铁基底上的直接成核。表面扩散对ＣＶＤ 金刚石成核有重要影响。     

Diamond formation on carbon/carbon composite

A carbon/carbon composite was used as substrate for low-pressure diamond deposition. To enhanced diamond nucleation on carbon/carbon composites, a total of ten surface preparation methods have been investigated. These methods involved the use of atomic hydrogen etching, mechanical polishing, sonication, or coating. Diamond nucleation was found to occur on either the defects of the carbon/carbon composite substrates or diamond particulate left on the substrates. The defects were created primarily by atomic hydrogen etching during the coating process. Seeding with diamond powders was performed by dip coating, sonication, or spray-coating processes. It was found that these seeding processes resulted in excellent nucleation of diamond.     

Nucleation and growth mechanism of diamond during hot-filament chemical vapour deposition

High-resolution transmission electron microscopy (HRTEM) was employed to study the nucleation and subsequent growth mechanism of crystalline diamond grown on copper TEM grids by the hot-filament chemical vapour deposition process. The HRTEM revealed direct evidence for the formation of a diamond-like amorphous carbon layer 8–14 nm thick, in which small diamond microcrystallites about 2–5 nm across were embedded. These diamond microcrystallites were formed as a result of direct transformation of the diamond-like carbon into diamond. Large diamond crystallites were observed to grow from these microcrystallites. The diamond surface was found to be non-uniform. It is envisaged that the diamond microcrystallites present in the amorphous, diamond-like carbon layer provide nucleation sites on which the large diamond crystallites grew. A mechanism of diamond growth has been proposed, based on the experimental findings, and is consistent with available theoretical models and numerous experimental observations reported in the literature.     

Deposition of diamond coating on pure titanium using micro-wave plasma assisted chemical vapor deposition

The nucleation and growth of diamond coatings on pure Ti substrate were investigated using microwave plasma assisted chemical vapor deposition (MW-PACVD) method. The effects of hydrogen plasma, plasma power, gas pressure and gas ratio of CH₄ and H₂ on the microstructure and mechanical properties of the deposited diamond coatings were evaluated. Results indicated that the nucleation and growth of diamond crystals on Ti substrate could be separated into different stages: (1) surface etching by hydrogen plasma and the formation of hydride; (2) competition between the formation of carbide, diffusion of carbon atoms and diamond nucleation; (3) growth of diamond crystals and coatings on TiC layer. During the deposition of diamond coatings, hydrogen diffused into Ti substrate forming titanium hydride and led to a profound microstructure change and a severe loss in impact strength. Results also showed that pre-etching of titanium substrate with hydrogen plasma for a short time significantly increased the nuclei density of diamond crystals. Plasma power had a significant effect on the surface morphology and the mechanical properties of the deposited diamond coatings. The effects of gas pressure and gas ratio of CH₄ and H₂ on the nucleation, growth and properties of diamond coatings were also studied. A higher ratio of CH₄ during deposition increased the nuclei density of diamond crystals but resulted in a poor and cauliflower coating morphology. A lower ratio of CH₄ in the gas mixture produced a high quality diamond crystals, however, the nuclei density and the growth rate decreased dramatically.