铜锌锡硫化合物电池或研发成功

据美国物理学家组织网报道,美国普渡大学科学家最新报告称,他们设计出了由低成本、来源丰富的材料制成的太阳能电池,这种电池易于大规模生产且性能非常稳定,其全域转化效率高达7.2%,高于目前的同类太阳能电池,其转化效率在未来还有很大的提升空间。     

真空法制备铜锌锡硫硒薄膜太阳电池的研究进展

真空法具有沉积速率快、重复性高以及成膜质量高等优势,有望成为大规模生产铜锌锡硫硒(Cu₂ZnSn(S,Se)₄,CZTSSe)薄膜太阳电池的制备方法。主要介绍了热蒸发法、磁控溅射法和脉冲激光沉积法等三种沉积CZTSSe薄膜的方法,阐述了采用真空法制备CZTSSe薄膜太阳电池的研究进展,同时对各种方法的优化途径(如退火条件优化、掺杂、背接触改善等)进行对比分析。最后,阐明了真空法的潜在优势以及存在的问题,并对未来发展进行展望。     

溶胶-凝胶非硫化法制备铜锌锡硫薄膜

采用溶胶-凝胶非硫化方法制备了表面平整、致密的铜锌锡硫薄膜.XRD及Raman分析表明制备的铜锌锡硫薄膜为锌黄锡矿结构.能谱分析表明所有薄膜均贫铜富锌贫硫.场发射扫描电子显微镜测得薄膜的厚度在0.7 μm左右.透射光谱表明随后退火温度的提高薄膜的光学带隙从2.13 eV减小到1.52 eV.     

（英）硫代硫酸钠浓度对电沉积制备铜锌锡硫硒薄膜性质的影响

采用后硒化Cu-Zn-Sn-S电沉积预制层的方法制备了铜锌锡硫硒薄膜,其中Cu-Zn-Sn-S预制层是通过含有不同浓度的硫代硫酸钠电解液电沉积而成的.实验发现,硒化前后薄膜的性质与硫代硫酸钠浓度密切相关.SEM,EDS,XRD,Raman和透射光谱分析表明,当硫代硫酸钠的浓度为5 mM时,沉积的薄膜形貌平整,晶粒明显,组分贫锌,具有单一的铜锌锡硫硒结构,且其带隙为1.11 eV; 在浓度高于5 mM下沉积的薄膜形貌粗糙并产生杂相硒化锡; 在浓度低于5 mM下沉积的薄膜组分严重贫锌并生成大量的Cu2SnSe3.     

IBM研发铜锌锡光伏电池打破世界纪录

IBM的材料科学团队与13本太阳能电池厂商SolarFrontier和其他团队一起合作,一直致力于发展高效和经济丰富的自然材料来生产光伏电池。他们的努力获得了成功．使用铜、锌、锡（简称CZTS）这些常见的元素制做电池,光电转换率达到了11．1％。但跟其它同等产品相比效率已经高出10％。此外,CZTS太阳能电池也运用到简单的喷墨技术里,例如印刷印刷或铸造。该材料可以直接沉积在低成本的基板上,如玻璃、金属或塑料箔。IBM表示这种特性的太阳能电池明年将大规模量产。     

新型层状结构SnO的合成、光学性质及其表面缺陷

采用无模板水热法在温和的反应条件下成功合成了形貌结构均一的层状结构氧化亚锡(SnO).利用X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)和能量散射X射线探测器(EDX)对所合成样品的晶体结构、形貌结构和化学成分分别进行了表征.利用荧光光谱仪和显微拉曼光谱仪研究了所合成样品的光致发光(PL)光谱和拉曼散射谱.光致发光第一次观察到了所合成的氧化亚锡在较宽波长范围(350～550 nm)内蓝紫光的发光带,分析认为这是由其表面的大量缺陷引起的,并结合拉曼光谱研究分析了其表面缺陷.此结构氧化亚锡的蓝光发光带可能在LED方面具有潜在应用.     

电镀铜锡锌三元合金应用探讨

本文主要探讨了电镀铜锡锌三元合金的槽液控制方法,以及镀层的三防性能、镀层导电性、镀层可焊性、镀层附着力、镀层退镀方法。     

霍尼韦尔宣布扩大半导体行业中铜和锡的精炼产能

霍尼韦尔电子材料部宣布,其华盛顿州斯波坎市工厂的高纯度铜和锡精炼和铸造产能将增加至两倍以上．以响应半导体行业不断增长的需求。     

有机红外半导体酞菁铒的合成及光学表征

用固相合成法和液相合成法分别合成了酞菁铒.测试了酞菁铒在氯仿溶液中的UV-Vis吸收光谱、酞菁铒粉末在KBr薄片中的FT-IR光谱和石英基片上酞菁铒固体薄膜椭圆偏振光谱,分析和讨论了各个光谱中吸收峰的归属和与之对应的能级结构.光谱表征表明酞菁铒为三明治结构,其在1.4～1.8μm的近红外波段有明显的红外吸收.     

ZnO及其缺陷电子结构对光谱特性的影响

利用全势LMTO(FP-LMTO)理论计算方法,对ZnO中的某些缔合缺陷(如氧空位和锌填隙、锌填隙和锌空位及锌的氧反位缺陷)的电子结构进行了计算.根据本文和以前的计算结果,得到了ZnO中几种本征点缺陷对应的缺陷态能级位置.利用得到的理论计算结果,我们分析了ZnO的吸收和发射光谱可能产生的机制,并讨论了ZnO与缺陷电子结构对它们的影响.     

用热蒸发法制备的Cu2ZnSnS4 薄膜的光电性能

在室温下用真空热蒸发法在玻璃基片上制备Sn/Cu/ZnS 前躯体膜层,然后对其在550C 下在硫气氛中硫化3小时以制得Cu₂ZnSnS₄ (CZTS) 多晶薄膜。对该薄膜进行X射线衍射（XRD）、能量色散X射线光谱（EDX）、紫外可见近红外分光光度计、霍尔测量系统和3D光学显微镜等分析测试。实验结果表明,当[Cu]/([Zn] [Sn]) =0.83和[Zn]/[Sn] =1.15时,该CZTS薄膜在光子能量范围在1.5 - 3.5 eV 时其吸收系数大于4.010₄cm_-1 ,直接带隙为1.47 eV。其载流子浓度、电阻率和迁移率分别为7.9710₁₆ cm_-3, 6.06 Ω.cm, 12.9 cm₂/(V.s), 导电类型为p型。因此,所制备出的CZTS 薄膜适合作为太阳电池的吸收层材料。     

Cu2ZnSnS4四种晶型的电子结构、光学性质和力学性质

本文采用密度泛函理论详细计算了Cu₂ZnSnS₄四种晶型的晶体结构、电子结构、光学性质和力学性质。结果表明它们之间在光学性质和力学性质方面没有非常明显的差异,计算结果与文献报道的实验数据基本一致。根据计算结果,Cu2ZnSnS4的基本带隙是由孤立导带的带宽来决定。Cu₂ZnSnS₄的载流子有效质量非常小,尤其是闪锌矿衍生的Cu₂ZnSnS₄在导带底具有极小的电子有效质量。根据所计算的力学常数矩阵可知,四种晶型的Cu₂ZnSnS₄; 均符合Born稳定性条件,而且较高的B/G比例表明Cu2ZnSnS4的四种晶型都具有突出可塑性。     

用溶胶-凝胶法制备的Cu2Bi2Cr2O8薄膜 及其光学和铁磁性能研究

以硝酸铜Cu(NO₃)₂·3H₂O、硝酸铬Cr(NO₃)₃·9H₂O、硝酸铋Bi(NO₃)₃·3H₂O和乙二醇为原料,利用溶胶-凝胶工艺在石英衬底上制备了纳米Cu₂Bi₂Cr₂O₈薄膜。通过X射线衍射(X-Ray Diffraction, XRD)和拉曼测试对样品进行了表征。结果表明,Cu₂Bi₂Cr₂O₈薄膜具有良好的光学特性,其禁带宽度为1.49 eV;在磁性测试方面,Cu₂Bi₂Cr₂O₈薄膜呈现出了良好的铁磁性。     

Preparation and characterization of sphere-like Cu2SnS3 nanoparticles and their dropcasted thin films

Ternary sphere-like Cu₂SnS₃(CTS) semiconductor and 2D hexagonal sheets were synthesized via a simple solvothermal method using PVP as the surface ligand at two temperatures of 180 and 220℃. The structural, morphological, and chemical compositions as well as optical properties of as-synthesized CTS particles were characterized using X-ray diffraction (XRD), Raman spectroscopy, energy dispersive X-ray spectrometry (EDS), field emission scanning electron microscopy (FESEM), and UV-Vis spectroscopy. The size of sphere-like particles and the side length of hexagonal sheets were within the range of 120-140 nm and 500 nm-2 μm, respectively. FESEM, XRD, and EDS were analyzed to investigate the mechanism of the morphological evolution of CTS particles. CTS particles showed proliferation of Sn atomic ratio, which is strongly sensitive to reaction temperature and, highly affects the increase of band gap energy from 1.36 to 1.53 eV due to generation metal defects and formation SnS₂. The optical analysis via the transmittance and reflectance reveals that the band-gap energy of dropcasted CTS thin films decreases after annealing due to grain growth and change of chemical compositions. Photo-responses of CTS nanocrystal thin films indicated a considerable increase in the conductivity of the films under light illumination. All these results showed the potential of these films for solar cell applications.     

Impact of Cu-rich growth on the Cu2ZnSnSe4 surface morphology and related solar cells behavior

In order to study the influence of Cu-rich growth on the performance of the Cu₂ZnSnSe₄ (CZTSe) thin film solar cells, a multi-stage co-evaporation process is applied. The CZTSe films are grown at a lower substrate temperature to reduce the existence time of Cu_xSe_y at the first period caused by the volatility of SnSe_x. This study examines the surface morphology and device performance in Cu-rich growth and close-to-stoichiometric growth. Although the grain size of Cu-rich growth film increases a little, the difference was not dramatic as the results of CIGS reported previously. A model based on the grain boundary migration theory is proposed to explain the experimental results. The mechanisms of Cu-rich growth between CZTSe and CIGS might be different.     

硒蒸发温度对共蒸发法制备CZTSe太阳电池的影响

使用一步蒸发法制备了CZTSe太阳电池. 研究了不同硒蒸发温度对CZTSe薄膜结构特性的影响. 通过硒蒸发温度与初始阶段二元硒化物的关系解释了实验现象。当Se蒸发温度超过一定值Sn的缺失现象停止时,不需要继续提高Se的蒸发温度可以减少生产中Se的消耗。最终在较合适的230 oC 硒蒸发温度下制备出效率为2.32%（有效面积0.34cm2）的CZTSe太阳电池。     

Cu2O-based solar cells using oxide semiconductors

We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu₂O heterojunction solar cells fabricated using p-type Cu₂O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu₂O sheets under various deposition conditions using a pulsed laser deposition method. In Cu₂O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa₂O₄ thin-film layer. In most of the Cu₂O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga₂O₃-Al₂O₃ systems, higher conversion efficiencies (η) as well as a high open circuit voltage (V_oc) were obtained by using a relatively small amount of MgO or Al₂O₃, e.g., (ZnO)_0.91-(MgO)_0.09 and (Ga₂O₃)_0.975-(Al₂O₃)_0.025, respectively. When Cu₂O-based heterojunction solar cells were fabricated using Al₂O₃-Ga₂O₃-MgO-ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high V_oc of 0.98 V and an η of 4.82% were obtained. In addition, an enhanced η and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu₂O heterojunction solar cells fabricated using Na-doped Cu₂O (Cu₂O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an η of 6.25% and a V_oc of 0.84 V were obtained in a MgF₂/AZO/n-(Ga₂O₃-Al₂O₃)/p-Cu₂O:Na heterojunction solar cell fabricated using a Cu₂O:Na sheet with a resistivity of approximately 10 Ω·cm and a (Ga_0.975Al_0.025)₂O₃ thin film with a thickness of approximately 60 nm. In addition, a V_oc of 0.96 V and an η of 5.4% were obtained in a MgF₂/AZO/n-AGMZO/p-Cu₂O:Na heterojunction solar cell.     

Colloidal synthesis and characterization of Cu2ZnSnS4 nanoplates

Synthesis of copper zinc tin sulphide (Cu₂ZnSnS₄) with nanoplate morphology was achieved through colloidal method using oleic acid as capping agent and solvent with 1-octadecene (1-ODE) at 240℃. X-ray diffraction (XRD) analysis shows that the synthesized nanoplates possessed pure kesterite phase. SEM analysis clearly shows the formation of nanoplates having the size of about 50-100 nm. Electron spin resonance (ESR) spectrum analysis of the prepared nanoplates shows that the valence state of copper (Ⅱ) which indicates the strong coupling with other metal ions. Thermo gravimetric/differential thermal analysis (TG/DTA) analysis shows the weight loss of sample at 450℃ predicting the loss of capping ligands on the surface of the nanoparticles. The possible mechanism for the conversion of nanoplate-like structures during synthesis was discussed. The results are discussed in detail.     

共沉淀法制备Y2O2SO4:Eu3+荧光粉及其光致发光研究

采用商业Y(NO3)3·6H2O、Eu(NO3)3·6H2O、(NH4)2SO4和NaOH为实验原料,通过共沉淀法制备了Y2O2SO4:Eu3+荧光粉。利用热分析(DTA-TG-DTG)、傅里叶变换红外(FT-IR)光谱、X射线衍射(XRD)、扫描电子显微镜(SEM)和光致发光(PL)光谱等手段对合成的粉体进行了表征。结果表明,当(NH4)2SO4引入到反应体系中时,前驱体具有非晶态结构,且在空气气氛中800℃煅烧2h能转化为单相的Y2O2SO4粉体,该Y2O2SO4粉体呈准球形,粒径范围分布在0.5~1.0μm之间,团聚较严重。PL光谱分析表明,在270nm紫外光激发下,Y2O2SO4:Eu3+荧光粉呈红光发射,主发射峰位于620nm,归属于Eu3+的5D0→7F2跃迁。Eu3+的猝灭浓度是5 mol%,其对应的荧光寿命为1.22 ms。另外,当(NH4)2SO4未引入到反应体系中时,采用类似的方法合成了Y2O3:Eu3+荧光粉,并对Y2O2SO4:Eu3+和Y2O3:Eu3+荧光粉的PL性能进行了比较。     

用于白光LED的KNaCa2(PO4)2:Eu2+蓝色荧光粉的发光特性

采用高温固相法合成了蓝色荧光粉KNaCa₂(PO₄)₂:Eu²⁺,利用X射线衍射(XRD)和光谱技术等表征了材料的性能。结果显示,少量Eu 2+的掺入并没有影响KNaCa₂(PO₄)₂的晶体结构。 在399nm近紫外光激发下,KNaCa₂(PO₄)₂:Eu²⁺材料发 射蓝光,发射光谱为400～600nm, 主发射峰位于471nm,对应Eu²⁺的4f^65d1→ 4f⁷跃迁发射;471nm发射峰,对应的激发光 谱为250～450nm,主激发峰位于399nm,与近紫外芯片匹配很好。 以365nm近紫外光作为 激发源时,KNaCa₂(PO₄)₂:Eu²⁺材料的发射强度约为商用蓝色荧光粉BAM:Eu 2+的85%;而以 399nm近紫外光作为激发源时,相较于BAM:Eu²⁺,KNaCa₂(P O₄)₂:Eu²⁺材料具有更强的发射强 度。此外,KNaCa₂(PO₄)₂:Eu²⁺和BAM:Eu²⁺的CIE色坐标接近,均位于蓝 色区域,色坐标分别 为(0.154,0.154)和(0.141,0.112)。研究结果 表明,KN aCa₂(PO₄)₂:Eu²⁺是一种在三基色白光LED中有应用前景的蓝色荧光粉。