共查询到18条相似文献,搜索用时 156 毫秒
1.
为有效减小S波段基片集成波导(Substrate Integrated Waveguide,SIW)滤波器的尺寸和插入损耗,提出了一种基于四分之一模基片集成波导(Quarter-Mode Substrate Integrated Waveguide,QMSIW)和八分之一模基片集成波导(Eighth-Mode Substrate Integrated Waveguide,EMSIW)交叉排列耦合的小型化带通滤波器;并针对提高滤波器选择性和带外抑制水平,通过设计源与负载耦合,实现传输零点的引入。设计了一款小型化带通滤波器,中心频率为3.7 GHz,相对带宽为18.9%,仿真测得最小插入损耗为0.55 dB,带外抑制大于40 dB,且标准化尺寸仅为0.24λ_0×0.11λ_0。通过制作实物验证,测试与仿真相吻合。 相似文献
2.
为有效减小S波段基片集成波导SIW( Substrate Integrated Waveguide)滤波器的尺寸和插入损耗,提出了一种基于 1/4模基片集成波导QMSIW(Quarter Mode Substrate Integrated Waveguide)和1/8模基片集成波导EMSIW(Eighth Mode Substrate Integrated Waveguide)的紧凑型带通滤波器,利用EMSIW与QMSIW谐振腔体结构互补的特点,减少电磁泄露,改善插入损耗,通过设计交叉耦合,实现传输零点的引入,以改善其选择性和带外抑制水平,分别设计了四腔体EMSIW小型化带通滤波器以及EMSIW-QMSIW结构的小型化带通滤波器,其中心频率均为3.8GHz,两滤波器的相对带宽为13.8%和8.4%,测试插入损耗均小于1.05dB,带外抑制高于60dB,传输零点数均为3,且标准化尺寸仅分别为0.24λ0×0.11λ0和0.35λ0× 0.12λ0。? 相似文献
3.
为满足滤波器在双频带通信系统中发展的要求,提出了一种基于1/4模基片集成波导(QMSIW)加载互补开口谐振环(CSRR)的新型双通带滤波器。根据CSRR谐振器的传输特性,实现以其谐振频点为中心的第一个通带;设计QMSIW谐振腔的边长,实现以该腔体谐振频点为中心的第二通带;设计QMSIW腔体间的耦合方式,在两通带之间和高阻带处各引入一个传输零点,加强两通带隔离度和带外抑制。设计了一款两通带的中心频率分别为8.1 GHz和11.5 GHz,且有效尺寸仅为15 mm×8 mm,插入损耗低于0.4 dB,高阻带衰减达64 dB,两通带隔离度达46 dB。 相似文献
4.
提出了一种基于圆形互补裂环谐振器的新型基片集成波导双工器。该款双工器工作在C波段,两个通道滤波器的工作频率均低于基片集成波导谐振腔的截止频率,由此达到小型化的目的,通道滤波器的体积较传统基片集成波导滤波器缩小约30%。圆形互补裂环谐振器较方形互补裂环谐振器的小型化效果好,并且更易设计。文中提出了一种新的增加通道隔离度方法,即在两个互补裂环谐振器之间切开一个缝隙。该款双工器已被加工成实物,实测两通道插入损耗为1.75 dB(@3.92 GHz)和1.62 dB(@4.62 GHz),隔离度>37 dB,实测数据和仿真结果吻合。 相似文献
5.
6.
7.
8.
提出了一种新型毫米波双通带基片集成波导(SIW)滤波器,该滤波器由双模基片集成波导和双模带线谐振器构成。其中双模带线谐振器嵌入到双模基片集成波导谐振腔中,不占据额外的电路面积,利用双模带线谐振器的TEM模和双模基片集成波导谐振腔的两个简并模式TE102、TE201,可分别形成两个相互独立的通带,因此该滤波器的设计具有很大的灵活性。所设计的双通带滤波器具有三个传输零点,实现了良好的带外抑制和带间隔离度。该双通带滤波器工作于28.4GHz和32.2GHz,3dB带宽分别为2%和3%。最终的测试结果和仿真结果相吻合,证明了该设计方法的可靠性。 相似文献
9.
10.
11.
Jiafeng Zhou Lancaster M.J. Huang F. 《Applied Superconductivity, IEEE Transactions on》2004,14(1):28-32
The design and experimental results of a four-pole coplanar waveguide (CPW) quasi-elliptic filter using high-temperature superconductor (HTS) films are presented. Quarter-wavelength meander-line resonators are used in the filter topology. Although the resonators are aligned in two lines, no bond-wire bridges are required to balance the ground planes in the design and measurement. The slot-line mode of the filter was shifted to be higher than its third harmonic. The filter is highly miniaturized and the performance is significantly improved by the use of superconductors. The main circuit of the filter only has an area of about 6.6 mm /spl times/ 2.4 mm on a magnesium oxide substrate, coated with 600-nm-thick YBCO HTS thin film on single side of the substrate. The 3-dB bandwidth is about 1.6% centered at 2.95 GHz. The performance measured at 30 K, without any tuning, gives an insertion loss of better than 0.4 dB and a return loss of about 12 dB in the passband. The first spurious mode is about triple the center frequency. 相似文献
12.
提出了一种基于共面波导(Coplanar Waveguide,CPW)和微带线复合结构的四分之一波长带通滤波器(Bandpass Filter,BPF)。该带通滤波器由两个终端开路的T形微带馈线结构和四个交叉耦合的四分之一波长CPW谐振器组成。通过仿真优化得到其特性曲线图,并分析比较了不同参数对其滤波性能的影响。仿真结果表明,该带通滤波器在其2.97~3.03 GHz的通带内的最小插损低于0.4dB,回波损耗大于30dB,同时其带外衰减都大于25dB。这种滤波器结构紧凑,尺寸小,性能好,可应用于很多微波系统中。 相似文献
13.
14.
A novel coplanar-waveguide (CPW) bandpass filter using a dual-mode resonator is presented in this letter. In the filter, a square-ring is used as the resonator, and a microstrip line stub attached the inner corner of the square-ring is used as the perturbation element. The square-ring and the input/output CPW are constructed on the two sides of a dielectric substrate, respectively. The filter has been investigated numerically and experimentally. Measured result shows that the filter has a minimum insertion loss of 1.2dB in its passband and an out-of-band rejection level of -45dB. 相似文献
15.
16.
Kwak J.S. Jong Hyun Lee Jin Pyo Hong Seok Kil Han Wan Sun Kim Kook Rin Char 《Applied Superconductivity, IEEE Transactions on》2003,13(1):17-19
A novel highly compact high-temperature superconducting filter based on spiral lumped elements was demonstrated for personal communication system applications. The filter consists of eight-pole microstrip resonators enclosed in a substrate 0.5 /spl times/ 5 /spl times/ 32 mm. The filter was designed to have a bandwidth of 17 MHz and a center frequency of 1760 MHz. A low insertion loss of 0.4 dB in the passband with an out-of-band rejection loss of about -70 dB was observed at 65 K. Measured characteristics of the filter showed good agreement with simulated responses. 相似文献
17.
Zhengzheng Wu 《Microelectronic Engineering》2010,87(11):2247-2252
A micromachining technology for integrating high-performance radio-frequency (RF) passives on CMOS-grade low-cost silicon substrates is developed. The technology can form a thick solid-state dielectric isolation layer on silicon substrate through high-aspect-ratio trench etch and refill. On the non-high-resistivity but low-loss substrate, two metal layers with an inter-metal dielectric layer are formed for integrating embedded RF components and passive circuits. Using the technology, two types of integrated RF filters are fabricated that are band-pass filter and image-reject filter. The band-pass filter shows measured minimum insertion loss of 3.8 dB and return loss better than 15 dB, while the image-reject filter exhibits steeper band selection and achieves better than −30 dB image rejection. A 50 Ω co-planar waveguide (CPW) on the substrate is also demonstrated, showing low loss and low dispersion over the measured frequency range up to 40 GHz. The developed technology proves a viable solution to implementing silicon-based multi-chip modules (MCM) substrates for RF system-in-package (RF-SiP). 相似文献
18.
为解决反射信号损害系统性能的问题,提出了一种具有高带外抑制和高带外吸收的小型化吸收式低通滤波器。该滤波器通过高通通路和低通通路实现了吸收式低通滤波器;通过抑制增益支路实现了高带外抑制。利用ADS和HFSS仿真软件对滤波器结构进行优化设计,并进行了实物的加工和测试。实测结果表明:该滤波器的3 dB截止频率为4 GHz,其带内最小插入损耗0.88 dB,通带内DC到3.5 GHz的回波损耗大于20 dB,阻带回波损耗大于10 dB,10.5 GHz处的阻带抑制大于45dB,从8 GHz到30 GHz的带外抑制大于33 dB,实测结果与仿真结果有较好的吻合。该滤波器尺寸仅为1220μm×650μm×87.71μm,相比传统PCB、LTCC工艺的滤波器,体积大大缩小,符合现代射频与微波系统小型化的发展趋势。 相似文献