Distributed 2- and 3-bit W-band MEMS phase shifters on glass substrates

This paper presents state-of-the-art RF microelectromechanical (MEMS) phase shifters at 75-110 GHz based on the distributed microelectromechanical transmission-line (DMTL) concept. A 3-bit DMTL phase shifter, fabricated on a glass substrate using MEMS switches and coplanar-waveguide lines, results in an average loss of 2.7 dB at 78 GHz (0.9 dB/bit). The measured figure-of-merit performance is 93/spl deg//dB-100/spl deg//dB (equivalent to 0.9 dB/bit) of loss at 75-110 GHz. The associated phase error is /spl plusmn/3/spl deg/ (rms phase error is 1.56/spl deg/) and the reflection loss is below -10 dB over all eight states. A 2-bit phase shifter is also demonstrated with comparable performance to the 3-bit design. It is seen that the phase shifter can be accurately modeled using a combination of full-wave electromagnetic and microwave circuit analysis, thereby making the design quite easy up to 110 GHz. These results represent the best phase-shifter performance to date using any technology at W-band frequencies. Careful analysis indicates that the 75-110-GHz figure-of-merit performance becomes 150/spl deg//dB-200/spl deg//dB, and the 3-bit average insertion loss improves to 1.8-2.1 dB if the phase shifter is fabricated on quartz substrates.     

A single-chip dual-band direct-conversion IEEE 802.11a/b/g WLAN transceiver in 0.18-/spl mu/m CMOS

This paper presents a single-chip dual-band CMOS direct-conversion transceiver fully compliant with the IEEE 802.11a/b/g standards. Operating in the frequency ranges of 2.412-2.484 GHz and 4.92-5.805 GHz (including the Japanese band), the fractional-N PLL based frequency synthesizer achieves an integrated (10 kHz-10 MHz) phase noise of 0.54/spl deg//1.1/spl deg/ for 2/5-GHz band. The transmitter error vector magnitude (EVM) is -36/-33 dB with an output power level higher than -3/-5dBm and the receiver sensitivity is -75/-74 dBm for 2/5-GHz band for 64QAM at 54 Mb/s.     

A new wide-band planar balun on a single-layer PCB

A new wide-band microstrip balun implemented on a single-layer printed circuit board (PCB) is presented in this letter. The proposed planar balun consists of a wide-band Wilkinson power divider and a noncoupled-line broad-band 180/spl deg/ phase shifter. To demonstrate the design methodology, one prototype is realized. The new design was simulated and validated by the measurement. Measured results show that 10-dB return loss of the unbalanced port has been achieved across the bandwidth from 1.7 GHz to 3.3 GHz, or 64%. Within the operation band, the measured return losses for both the two balanced ports are better than -10 dB, and the balanced ports isolation is below -1.5 dB. The measured amplitude and phase imbalance between the two balanced ports are within 0.3 dB and /spl plusmn/5/spl deg/, respectively, over the operating frequency band.     

A complete single-chip GPS receiver with 1.6-V 24-mW radio in 0.18-/spl mu/m CMOS

A compact ultra-broadband MMIC-compatible uniplanar balun has been developed using offset air-gap coupler. The offset air-gap coupler presents tight coupling and low conductor loss, and thus allows the balun to show low loss at mm-wave frequencies. The measured insertion loss was less than 2 dB from 26 to 55 GHz, and amplitude and phase imbalance was less than /spl plusmn/1dB and 5/spl deg/, respectively over a wide frequency range from 27 to 69 GHz.     

On the feasibility of CMOS multiband phase shifters for multiple-antenna transmitters

We present the design of an integrated multiband phase shifter in RF CMOS technology for phased array transmitters. The phase shifter has an embedded classical distributed amplifier for loss compensation. The phase shifter achieves a more than 180/spl deg/ phase tuning range in a 2.4-GHz band and a measured more than 360/spl deg/ phase tuning range in both 3.5-GHz and 5.8-GHz bands. The return loss is less than -10dB at all conditions. The feasibility for transmitter applications is verified through measurements. The output power at a 1-dB compression point (P/sub 1 dB/) is as high as 0.4dBmat 2.4GHz. The relative phase deviation around P/sub 1 dB/ is less than 3/spl deg/. The design is implemented in 0.18-/spl mu/mRF CMOS technology, and the chip size is 1200/spl mu/m /spl times/ 2300 /spl mu/m including pads.     

A new Millimeter-wave printed dipole phased array antenna using microstrip-fed coplanar stripline tee junctions

A new millimeter-wave printed twin dipole phased array antenna is developed at Ka band using a new microstrip-fed CPS tee junction, which does not require any bonding wires, air bridges, or via holes. The phased array used a piezoelectric transducer (PET) controlled tunable multitransmission line phase shifter to accomplish a progressive phase shift. A progressive phase shift of 88.8/spl deg/ is achieved with the 5 mm of perturber length when the PET has full deflection. Measured return loss of the twin dipole antenna is better than 10 dB from 29.5 to 30.35 GHz. Measured return loss of better than 15 dB is achieved from 30 to 31.5 GHz for a 1/spl times/8 phased array. The phased array antenna has a measured antenna gain of 14.4 dBi with 42/spl deg/ beam scanning and has more than 11 dB side lobe suppression across the scan.     

A 360/spl deg/ Reflection-Type Diode Phase Modulator (Correspondence)

A 360/spl deg/ phase modulator using two series-tuned varactors in a parallel connection is described. The design minimizes the change in total phase shfit with frequency and gives a small attenuation ripple. The modulator is centered at 2 GHz and gives a total phase shift at 360/spl deg/ at the center frequency, an attenuation ripple of 1.3 dB over a 10-percent bandwidth and a 7/spl deg/ decrease of phase shift at the band edges.     

New miniature 15-20-GHz continuous-phase/amplitude control MMICs using 0.18-/spl mu/m CMOS technology

The design and performance of two new miniature 360/spl deg/ continuous-phase-control monolithic microwave integrated circuits (MMICs) using the vector sum method are presented. Both are implemented using commercial 0.18-/spl mu/m CMOS process. The first phase shifter demonstrates all continuous phase and an insertion loss of 8 dB with a 37-dB dynamic range from 15 to 20 GHz. The chip size is 0.95 mm /spl times/ 0.76 mm. The second phase shifter can achieve all continuous phase and an insertion loss of 16.2 dB with a 38.8-dB dynamic range at the same frequency range. The chip size is 0.71 mm /spl times/ 0.82 mm. To the best of the authors' knowledge, these circuits are the first demonstration of microwave CMOS phase shifters using the vector sum method with the smallest chip size for all MMIC phase shifters with 360/spl deg/ phase-control range above 5 GHz reported to date.     

2.4 GHz continuously variable ferroelectric phase shifters using all-pass networks

Continuously variable ferroelectric (BST on sapphire) phase shifters based on all-pass networks are presented. An all-pass network phase shifter consists of only lumped LC elements, and thus the total size of the phase shifter is kept to less than 2.2 mm /spl times/ 2.6 mm at 2.4 GHz. The tunability (C/sub max//C/sub min/) of a BST interdigital capacitor is over 2.9 with a bias voltage of 140 V. The phase shifter provides more than 121/spl deg/ phase shift with the maximum insertion loss of 1.8 dB and the worst case return loss of 12.5 dB from 2.4 GHz to 2.5 GHz. By cascading two identical phase shifters, more than 255/spl deg/ phase shift is obtained with the maximum insertion loss of 3.75 dB. The loss figure-of-merit of both the single- and double-section phase shifters is over 65/spl deg//dB from 2.4 GHz to 2.5 GHz.     

Development of multiband phase shifters in 180-nm RF CMOS technology with active loss compensation

We present the design and development of a novel integrated multiband phase shifter that has an embedded distributed amplifier for loss compensation in 0.18-/spl mu/m RF CMOS technology. The phase shifter achieves a measured 180/spl deg/ phase tuning range in a 2.4-GHz band and a measured 360/spl deg/ phase tuning range in both 3.5- and 5.8-GHz bands. The gain in the 2.4-GHz band varies from 0.14 to 6.6 dB during phase tuning. The insertion loss varies from -3.7 dB to 5.4-dB gain and -4.5 dB to 2.1-dB gain in the 3.5- and 5.8-GHz bands, respectively. The gain variation can be calibrated by adaptively tuning the bias condition of the embedded amplifier to yield a flat gain during phase tuning. The return loss is less than -10 dB at all conditions. The chip size is 1200 /spl mu/m/spl times/2300 /spl mu/m including pads.     

W-band CPW RF MEMS circuits on quartz substrates

This paper presents W-band coplanar waveguide RF microelectromechanical system (MEMS) capacitive shunt switches with very low insertion loss (-0.2 to -0.5 dB) and high-isolation (/spl les/ -30 dB) over the entire W-band frequency range. It is shown that full-wave electromagnetic modeling using Sonnet can predict the performance of RF MEMS switches up to 120 GHz. Also presented are W-band 0/spl deg//90/spl deg/ and 0/spl deg//180/spl deg/ switched-line phase shifters with very good insertion loss (1.75 dB/bit at 90 GHz) and a wide bandwidth of operation (75-100 GHz). These circuits are the first demonstration of RF MEMS digital-type phase shifters at W-band frequencies and they outperform their solid-state counterparts by a large margin.     

A novel planar dual balun for Doubly Balanced star mixer

A novel planar dual balun for doubly balanced star mixer is presented. The balun consists of two identical Marchand baluns using coupled microstrip lines. It shows the amplitude imbalance within 1.2 dB and the phase imbalance within 180/spl plusmn/1.5/spl deg/ over 1.2 to 2.8 GHz. The star mixer using a pair of the suggested balun has the conversion loss about 6 dB in the band.     

A 2-bit miniature X-band MEMS phase shifter

The design and performance of a compact low-loss X-band true-time-delay (TTD) MEMS phase shifter fabricated on 8-mil GaAs substrate is described. A semi-lumped approach using microstrip transmission lines and metal-insulator-metal (MIM) capacitors is employed for the delay lines in order to both reduce circuit size as well as avoid the high insertion loss found in typical miniaturized designs. The 2-bit phase shifter achieved an average insertion loss of -0.70 dB at 9.45 GHz, and an associated phase accuracy of /spl plusmn/1.3/spl deg/. It occupies an area of only 5 mm/sup 2/, which is 44% the area of the smallest known X-band MEMS phase shifter . The phase shifter operates over 6-14 GHz with a return loss of better than -14 dB.     

Broad-Band Microwave Measurements on GaAs "Traveling-Wave" Transistors

Instantaneous gain, noise figure, reverse attenuation, and gain and phase control measurements in the frequency range 8-18 GHz have been performed on GaAs traveling-wave transistors. The broad-band high-gain nature of the device together with the requirement for several bias connections precluded the use of standard test fixtures, and resulted in a package design exhibiting less than 1-dB insertion loss over the band together with 75- to 90-dB internal isolation. Untuned X-band gain, noise figure, and reverse attenuation were 12 dB, 18 dB, and 32 dB, respectively, and the gain and phase could be electronically varied over a 35-dB and 360/spl deg/ range. When RF tuning was employed, the gain, on the average, improved by 10 dB.     

K-band HBT and HEMT monolithic active phase shifters using vector sum method

Two monolithic 3-bit active phase shifters using the vector sum method to K-band frequencies are reported in this paper. They are separately implemented using commercial 6-in GaAs HBT and high electron-mobility transistor (HEMT) monolithic-microwave integrated-circuit (MMIC) foundry processes. The MMIC HBT active phase shifter demonstrates an average gain of 8.87 dB and a maximum phase error of 11/spl deg/ at 18 GHz, while the HEMT phase shifter has 3.85-dB average measured gain with 11/spl deg/ maximum phase error at 20 GHz. The 20-GHz operation frequency of this HEMT MMIC is the highest among all the reported active phase shifters. The analysis for gain deviation and phase error of the active phase shifter using the vector sum method due to the individual variable gain amplifiers is also presented. The theoretical analysis can predict the measured minimum root-mean-square phase error 4.7/spl deg/ within 1/spl deg/ accuracy.     

An impedance matched phase shifter using BaSrTiO/sub 3/ thin film

We present a distributed phase shifter with an equal ripple return loss at its operation frequency range. The phase shifter is based on a periodic structure and consists of a coplanar waveguide (CPW) line periodically loaded with voltage-variable barium strontium titanate (BST) interdigitated capacitors. Measurements show that its return loss is better than -15dB at frequencies from direct current to 16GHz, and at 9.4GHz, its phase shift is 41/spl deg/ under 120-V applied bias voltage.     

BCB-bridged distributed wideband SPST switch using 0.25-/spl mu/m In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As metamorphic HEMTs

In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As metamorphic high-electron mobility transistor (mHEMT) dc-30 GHz distributed single-pole-single through (SPST) switches were designed and fabricated using the low-/spl kappa/ benzocyclobutene (BCB) bridged technology. The current gain cutoff frequency, and the electron transit time of In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As mHEMTs have been investigated. By analyzing the extrinsic total delay time, the effective velocity of electrons can be estimated, and the average velocity is 2.3/spl times/10/sup 7/cm/s. The dc-30 GHz distributed wideband SPST switch exhibits an insertion loss of less than 5.5 dB, and an isolation larger than 30 dB, which is the first demonstration of the high-isolation of InAlAs-InGaAs mHEMTs monolithic switch. As to the power performance, this switch can handle the power up to 12 dBm at 2.4 GHz. After over 250 h of 85-85 (temperature =85/spl deg/C, humidity =85%) environmental evaluation, this BCB passivated and bridged microwave and monolithic integrated circuit switch demonstrates reliable RF characteristics without any significant performance change, which proves that this process using the low-/spl kappa/ BCB layer is attractive for millimeter-wave circuit applications.     

Linear tunable phase shifter using a left-handed transmission line

We demonstrate a compact, linear, and low loss variation hybrid phase shifter using a left-handed (LH) transmission line. For frequencies from 4.3 to 5.6 GHz, this phase shifter gives a nearly linear phase variation with voltage, with a maximum deviation of /spl plusmn/7.5/spl deg/. Within this frequency range, the maximum insertion loss is 3.6 dB, and the minimum insertion loss is 1.8 dB over a continuously adjustable phase range of more than 125/spl deg/, while minimum return loss is only 10.2 dB. Furthermore, this phase shifter requires only one control line, and it consumes almost no power.     

Lossless InAsP-InGaP modulator at 1.3 /spl mu/m for optical conversion of radio signals up to 40 GHz

We report on an InAsP-InGaP electroabsorption modulator at 1.3 /spl mu/m integrated with a semiconductor amplifier. The fiber-to-fiber insertion gain reaches +10 dB. The 50-/spl mu/m-long modulator section exhibits a bandwidth of 36 GHz and a -17-dB extinction ratio with 3-V drive voltage. The integrated amplifier produced an RF-link efficiency of -26 dB at 20 GHz without any external amplification.     

A 310/spl deg//3.6-dB K-band phaseshifter using paraelectric BST thin films

Ferro- and para-electric BaSrTiO/sub 3/ (/spl epsiv//sub r//spl sim/350 and tg/spl delta//spl sim/5/spl times/10/sup -2/ at 0V) thin films were deposited by low-cost sol-gel techniques. Subsequently, the films were used for fabricating coplanar waveguide phaseshifters using tunable finger-shaped capacitors. A 310/spl deg/ phaseshift was obtained at 30GHz and 35V of tuning voltage with 3.6dB of insertion loss yielding a figure of merit of 85/spl deg//dB.