Microstructural Development During Gas-Pressure Sintering of α-Silicon Nitride

Gas-pressure sintering of α-Si₃N₄ was carried out at 1850 ° to 2000°C in 980-kPa N₂. The diameters and aspect ratios of hexagonal grains in the sintered materials were measured on polished and etched surfaces. The materials have a bimodal distribution of grain diameters. The average aspect ratio in the materials from α-Si₃N₄ powder was similar to that in the materials from β-Si₃N₄ powder. The aspect ratio of large and elongated grains was larger than that of the average for all grains. The development of elongated grains was related to the formation of large nuclei during the α-to-β phase transformation. The fracture toughness of gaspressure-sintered materials was not related to the α content in the starting powder or the aspect ratio of the grains, but to the diameter of the large grains. Crack bridging was the main toughening mechanism in gas-pressure-sintered Si₃N₄ ceramics.     

Microstructure Characterization of Gas-Pressure-Sintered β-Silicon Nitride Containing Large β-Silicon Nitride Seeds

Fine β-Si₃N₄ powders with or without the addition of 5 wt% of large β-Si₃N₄ particles (seeds) were gas-pressure sintered at 1900°C for 4 h using Y₂O₃ and Al₂O₃ as sintering aids. The microstructures were examined on polished and plasmaetched surfaces. These materials had a microstructure of in situ composites with similar small matrix grains and different elongated grains. The elongated grains in the materials with seeds had a larger diameter and a smaller aspect ratio than those in the materials without seeds. A core/rim structure was observed in the elongated grains; the core was pure β-Si₃N₄ and the rim was β-SiAION. These results show that the large β-Si₃N₄ particles acted as seeds for abnormal grain growth and the rim was formed by precipitation from the liquid containing aluminum.     

Kinetics of β-Si3N4 Grain Growth in Si3N4 Ceramics Sintered under High Nitrogen Pressure

The kinetics of anisotropic β-Si₃N₄ grain growth in silicon nitride ceramics were studied. Specimens were sintered at temperatures ranging from 1600° to 1900°C under 10 atm of nitrogen pressure for various lengths of time. The results demonstrate that the grain growth behavior of β-Si₃N₄ grains follows the empirical growth law Dⁿ– D₀ⁿ = kt , with the exponents equaling 3 and 5 for length [001] and width [210] directions, respectively. Activation energies for grain growth were 686 kJ/mol for length and 772 kJ/mol for width. These differences in growth rate constants and exponents for length and width directions are responsible for the anisotropy of β-Si₃N₄ growth during isothermal grain growth. The resultant aspect ratio of these elongated grains increases with sintering temperature and time.     

Effect of Grain Growth of β-Silicon Nitride on Strength, Weibull Modulus, and Fracture Toughness

β-Si₃N₄ powder containing 1 mol% of equimolar Y₂O₃–Nd₂O₃ was gas-pressure sintered at 2000°C for 2 h (SN2), 4 h (SN4), and 8 h (SN8) in 30-MPa nitrogen gas. These materials had a microstructure of " in-situ composites" as a result of exaggerated grain growth of some β Si₃N₄ grains during firing. Growth of elongated grains was controlled by the sintering time, so that the desired microstructures were obtained. SN2 had a Weibull modulus as high as 53 because of the uniform size and spatial distribution of its large grains. SN4 had a fracture toughness of 10.3 MPa-m^1/2 because of toughening provided by the bridging of elongated grains, whereas SN8 showed a lower fracture toughness, possibly caused by extensive microcracking resulting from excessively large grains. Gas-pressure sintering of β-Si₃N₄ powder was shown to be effective in fostering selective grain growth for obtaining the desired composite microstructure.     

Change of Crystal Phases and Microstructure of Amorphous Si-C-N Powder by Hot Pressing

An amorphous Si-C-N powder with Y₂O₃ and Al₂O₃ powder as sintering additives was hot-pressed at 1900°C for 120 min in a nitrogen atmosphere. Changes in the crystalline phases and microstructure of the amorphous Si-C-N powder during sintering were investigated by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The defects at the fracture origins of the sintered bodies after bending tests also were investigated by scanning electron microscopy (SEM) and electron probe microanalysis (EPMA). XRD showed that alpha-Si₃N₄ was formed initially from the amorphous Si-C-N by 1530°C, which then transformed to ß-Si₃N₄ at 1600°C. Also, a slight formation of crystalline SiC occurred during the transformation from alpha- to ß-Si₃N₄, and it increased after the transformation was completed at 1900°C. TEM revealed that many SiC nanoparticles were incorporated into ß-Si₃N₄ grains after the transformation from alpha- to ß-Si₃N₄ at 1600°C. They were located at the triple points of the grain boundaries of ß-Si₃N₄ after continued Si₃N₄ grain growth at 1900°C. Besides the SiC nanoparticles, large agglomerations of carbon or SiC particles of 20-60 µm size were observed by SEM and EPMA at the fracture origins of the sintered bodies after the bending tests.     

Relationship between Microstructure and Mechanical Performance of a 70% Silicon Nitride–30% Barium Aluminum Silicate Self-Reinforced Ceramic Composite

The abnormal grain growth of β-Si₃N₄ was observed in a 70% Si₃N₄–30% barium aluminum silicate (70%-Si₃N₄–30%-BAS) self-reinforced composite that was pressureless-sintered at 1930°C; Si₃N₄ starting powders with a wide particle-size distribution were used. The addition of coarse Si₃N₄ powder encouraged the abnormal growth of β-Si₃N₄ grains, which allowed microstructural modification through control of the content and size distribution of β-Si₃N₄ nuclei. The mechanical response of different microstructures was characterized in terms of flexural strength, as well as indentation fracture resistance, at room temperature. The presence of even a small amount of abnormally grown β-Si₃N₄ grains improved the fracture toughness and minimized the variability in flexural strength.     

Experimental Evidence for the Anisotropic Ostwald Ripening of β-Silicon Nitride

A powder mixture of α-Si₃N₄, Y₂O₃, and SiO₂ was heat-treated in a loose powder state in the temperature range of 1750°–1900°C for 2 h; then, the mixture was acid-rinsed to remove the glassy phase. The widths and lengths of the resulting β-Si₃N₄ crystals were analyzed quantitatively. The width–aspect-ratio distribution of the β-Si₃N₄ crystals initially showed a strong negative correlation, and then the aspect ratio of crystals with small widths quickly decreased. After a stage in which aspect ratio was almost constant, regardless of the width, the width-aspect-ratio distribution evolved to show a positive correlation in the final stage. This pattern of morphology evolution of the β-Si₃N₄ crystals was in good agreement with that predicted by the anisotropic Ostwald ripening model.     

Electron Microscopy Study of the Effect of Iron in Reaction-Sintered Silicoa Nitride

The microstructure, crystal structure, and chemical composition of reaction-sintered Si₃N₄ containing iron were studied using conventional and scanning transmission electron microscopy. It was found that the grains of β -Si₃N₄ were large and blocklike with well-developed facets, a series of voids along some grain boundaries, a subgrain of iron silicide near the periphery, and penetration of iron silicide into the three-grain junctions and grain boundaries. At some distance from each β -Si₃N₄ grain was a region of small α-Si₃N₄ grains, with no evidence of iron silicide. Between this region and the β -Si₃N₄ grain was a zone containing both α- and β -Si₃N₄ and iron silicide. These observations suggest that the large β -Si₃N₄ grains grow in liquid iron silicide, that the smaller α-Si₃N₄ grains grow from the vapor, and that the latter are converted to the β form by solution in, and reprecipitation from, liquid iron silicide.     

Fabrication and Mechanical Properties of Silicon Carbide-Silicon Nitride Composites with Oxynitride Glass

A microstructure that consisted of uniformly distributed, elongated β-Si₃N₄ grains, equiaxed β-SiC grains, and an amorphous grain-boundary phase was developed by using β-SiC and alpha-Si₃N₄ powders. By hot pressing, elongated β-Si₃N₄ grains were grown via alpha right arrow β phase transformation and equiaxed β-SiC grains were formed because of inhibited grain growth. The strength and fracture toughness of SiC have been improved by adding Si₃N₄ particles, because of the reduced defect size and the enhanced bridging and crack deflection by the elongated β-Si₃N₄ grains. Typical flexural-strength and fracture-toughness values of SiC-35-wt%-Si₃N₄ composites were 1020 MPa and 5.1 MPam^1/2, respectively.     

Microstructural Observations on Hot-Pressed Si3N4

The development of microstructure in hot-pressed Si_aN₄ was studiehd for a typical Si₃N₄ powder with and without BeSiN₂ as a densification aid. The effect of hot-pressing temperature on density, α- to β-Si₃N₄ conversion and specific surface area showed that BeSiN₂ appears to increase the mobility of the system by enhancing densification, α- to β-Si₃N₄ transformation, and grain growth at temperatures between 1450° and 1800°. These processes appear to occur in the presence of a liquid phase.     

New Strategies for Preparing NanoSized Silicon Nitride Ceramics

We report the preparation of nanosized silicon nitride (Si₃N₄) ceramics via high-energy mechanical milling and subsequent spark plasma sintering. A starting powder mixture consisting of ultrafine β-Si₃N₄ and sintering additives of 5-mol% Y₂O₃ and 2-mol% Al₂O₃ was prepared by high-energy mechanical milling. After milling, the powder mixture was mostly transformed into a non-equilibrium amorphous phase containing a large quantity of well-dispersed nanocrystalline β-Si₃N₄ particles. This powder precursor was then consolidated by spark plasma sintering at a temperature as low as 1600°C for 5 min at a heating rate of 300°C/min. The fully densified sample consisted of homogeneous nano-Si₃N₄ grains with an average diameter of about 70 nm, which led to noticeable high-temperature ductility and elevated hardness.     

Plasma Etching of α-Sialon Ceramics

Plasma etching of β-Si₃N₄, α-sialon/β-Si₃N₄ and α-sialon ceramics were performed with hydrogen glow plasma at 600°C for 10 h. The preferential etching of β-Si₃N₄ grains was observed. The etching rate of α-sialon grains and of the grain-boundary glassy phase was distinctly lower than that of β-Si₃N₄ grains. The size, shape, and distribution of β-Si₃N₄ grains in the α-sialon/β-Si₃N₄ composite ceramics were revealed by the present method.     

Additive-Assisted Nitridation to Synthesize Si3N4 Nanomaterials at a Low Temperature

Starting from Si powder, NaN₃ and different additives such as N -aminothiourea, iodine, or both, Si₃N₄ nanomaterials were synthesized through the nitridation of silicon powder in autoclaves at 60°–190°C. As the additive was only N -aminothiourea, β-Si₃N₄ nanorods and α-Si₃N₄ nanoparticles were prepared at 170°C. If the additive was only iodine, α-Si₃N₄ dendrites with β-Si₃N₄ nanorods were obtained at 190°C. However, when both N -aminothiourea and iodine were added to the system of Si and NaN₃, the products composed of β-Si₃N₄ nanorods and α, β-Si₃N₄ nanoparticles could be prepared at 60°C.     

Thermal Conductivity of Gas-Pressure-Sintered Silicon Nitride

Si₃N₄ with high thermal conductivity (120 W/(m^.K)) was developed by promoting grain growth and selecting a suitable additive system in terms of composition and amount. β-Si₃N₄ doped with Y₂O₃-Nd₂O₃ (YN system) or Y₂O₃-A1₂O₃ (YA system) was sintered at 1700°-2000°C. Thermal conductivity increased with increased sintering temperature because of decreased two-grain junctions, as a result of grain growth. The effect of the additive amount on thermal conductivity with the YN system was rather small because increased additive formed multigrain junctions. On the other hand, with the YA system, thermal conductivity considerably decreased with increased additive amount because the aluminum and oxygen in the YA system dissolved into β-Si₃N₄ grains to form a β-SiAlON solid solution, which acted as a point defect for phonon scattering. The key processsing parameters for high thermal conductivity of Si₃N₄ were the sintering temperature and additive composition.     

Effect of Grain Size on the Thermal Conductivity of Si3N4

Polycrystalline Si₃N₄ samples with different grain-size distributions and a nearly constant volume content of grain-boundary phase (6.3 vol%) were fabricated by hot-pressing at 1800°C and subsequent HIP sintering at 2400°C. The HIP treatment of hot-pressed Si₃N₄ resulted in the formation of a large amount of ß-Si₃N₄ grains ∼10 µm in diameter and ∼50 µm long, and the elimination of smaller matrix grains. The room-temperature thermal conductivities of the HIPed Si₃N₄ materials were 80 and 102 Wm⁻¹K⁻¹, respectively, in the directions parallel and perpendicular to the hot-pressing axis. These values are slightly higher than those obtained for hot-pressed samples (78 and 93 Wm⁻¹K⁻¹). The calculated phonon mean free path of sintered Si₃N₄ was ∼20 nm at room temperature, which is very small as compared to the grain size. Experimental observations and theoretical calculations showed that the thermal conductivity of Si₃N₄ at room temperature is independent of grain size, but is controlled by the internal defect structure of the grains such as point defects and dislocations.     

Formation of β-Silicon Nitride Crystals from (Si,Al,Mg,Y)(O,N) Liquid: I, Phase, Composition, and Shape Evolutions

Precipitation, growth, and coarsening of Si₃N₄ crystals in (Si,Al,Mg,Y)(O,N) liquids at 1680°C has been studied. The initial nucleation of β-Si₃N₄ occurs mostly on α-Si₃N₄ because of the very high supersaturation of the liquid. After a brief period of growth, the crystals then undergo accelerated coarsening, decreasing the crystal concentration by almost 100 times with little change in the total crystal volume. Meanwhile, the crystals gradually transform from β-Si₃N₄, by substituting Si-N with Al-O, to β'-SiAlON of various compositions. The evolution of aspect ratio strongly depends on the Si/(Al,Mg,Y) ratio, which is rationalized by cation segregation to the interface driven by the acidity-basicity differential between the liquid and the crystal.     

Topotactically Oriented α-Si3N4 Cores in Sintered β-Si3N4

α-Si₃N₄ core structures within β-Si₃N₄ grains have been studied by transmission electron microscopy. The grains were dispersed in an oxynitride glass which was previously melted at 1600°C. The cores were topotactically related to the as-grown β-Si₃N₄ crystallites and are related to epitactical nucleation during heat treatment as the most probable mechanism.     

Quantitative Microscopy of β-Si3N4 Ceramics

The three-dimensional grain size distribution in an experimental β-Si₃N₄ material has been determined using the hexagonal prism as a model of β-Si₃N₄ grain shape. Results from quantitative microscopy of polished and etched sections were compared with computer-generated two-dimensional stereological parameters of hexagonal prisms with different aspect ratios in order to determine an average grain shape (i.e., aspect ratio) in the microstructure. Section parameter distributions for the average grain shape were obtained from the computer simulations and used in a three-dimensional reconstruction of the microstructure. The results showed that this Si₃N₄ ceramic had the postulated fibrous microstructure and a broad grain size distribution.     

Spark Plasma Sintered Silicon Nitride Ceramics with High Thermal Conductivity Using MgSiN2 as Additives

Silicon nitride ceramics were prepared by spark plasma sintering (SPS) at temperatures of 1450°–1600°C for 3–12 min, using α-Si₃N₄ powders as raw materials and MgSiN₂ as sintering additives. Almost full density of the sample was achieved after sintering at 1450°C for 6 min, while there was about 80 wt%α-Si₃N₄ phase left in the sintered material. α-Si₃N₄ was completely transformed to β-Si₃N₄ after sintering at 1500°C for 12 min. The thermal conductivity of sintered materials increased with increasing sintering temperature or holding time. Thermal conductivity of 100 W·(m·K)⁻¹ was achieved after sintering at 1600°C for 12 min. The results imply that SPS is an effective and fast method to fabricate β-Si₃N₄ ceramics with high thermal conductivity when appropriate additives are used.     

Microstructure Tailoring for High Thermal Conductivity of β-Si3N4 Ceramics

β-Si₃N₄ ceramics sintered with Yb₂O₃ and ZrO₂ were fabricated by gas-pressure sintering at 1950°C for 16 h changing the ratio of "fine" and "coarse" high-purity β-Si₃N₄ raw powders, and their microstructures were quantitatively evaluated. It was found that the amount of large grains (greater than a few tens of micrometers) could be drastically reduced by mixing a small amount of "coarse" powder with a "fine" one, while maintaining high thermal conductivity (>140 W·(m·K)⁻¹). Thus, this work demonstrates that it is possible for β-Si₃N₄ ceramics to achieve high thermal conductivity and high strength simultaneously by optimizing the particle size distribution of raw powder.