Low-voltage and low-power Ku-band CMOS LNA using capacitive feedback

Analog Integrated Circuits and Signal Processing - An ultra-wideband (12–18 GHz) low-noise amplifier (LNA) using a 65 nm CMOS technology is proposed, in which a...     

Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing

Semiconductors - The thermal stability of silicon-on-insulator films with a thickness of 4.7  and 2.2 nm is studied as a function of annealing temperature in the range of...     

An Enhanced Low Noise Amplifier Circuit at 6 GHz Center Frequency and NF Improvement in 180 nm CMOS Process

Wireless Personal Communications - This paper presents the design and simulation of a modified CMOS low noise amplifier (LNA) circuit in 180 nm CMOS standard technology. We modified a...     

Effect of Praseodymium and Lanthanum Substitution for Bismuth on the Thermoelectric Properties of BiCuSeO Oxyselenides

Semiconductors - The  results  of  investigating  the  thermoelectric  properties of the bulk р-type oxyselenides Bi1 –xPrxCuSeO (x...     

Novel nonlinearity minimized time-to-digital converters with digital calibration technique

Analog Integrated Circuits and Signal Processing - This paper presents a low nonlinearity, four channel Gated Ring Oscillator (GRO) based Time-to-Digital Converters (TDC) in Xilinx 28 nm...     

Broadband C-plus L-band CW wavelength-tunable fiber laser based on hybrid EDFA and SOA

In this demonstration, we propose and experimentally investigate a widely C + L band wavelength-tunable fiber ring laser in continuous-wave (CW) tuning based on a hybrid semiconductor optical amplifier (SOA) and erbium-doped fiber amplifier (EDFA) in a serial scheme. When a hybrid first-stage SOA and second-stage EDFA is used inside ring cavity, the effectively amplification range can be extended from C-band to L-band. Here, the proposed laser features wide wavelength-tuning range, high output power, and high side-mode suppression ratio (SMSR). In addition, a tunable range over 91.5 nm (from 1518.5 to 1610.0 nm) has been achieved.     

A multimode CMOS PA with a single propagation path

Analog Integrated Circuits and Signal Processing - In this paper a four mode 130 nm RF CMOS power amplifier (PA) in a single propagation path topology is presented and evaluated with IEEE...     

Synthesis and Thermoelectric Properties of an Sn1 – xPbxSb4Te8 Solid Solution Doped with Bismuth

Semiconductors - The thermoelectric properties of a solid solution of Sn1 – xPbxSb4Te8 and Sn1 – xPbxSb4 – yBiyTe8...     

Optical Absorption Related to Interband and Intersubband Electron Transitions in Bismuth Telluride

Semiconductors - The  spectral  dependences  of  the absorption coefficient α in the submicron samples of the n-Bi2Te3 + CdBr2 topological insulator, which...     

Transition from an Exponential to Linear Increase in the Energy Density of the Spectral Component of Picosecond Stimulated Emission by GaAs upon Gain Saturation

Semiconductors - At the beginning of high-power optical picosecond pumping of the GaAs layer of the AlxGa1 – xAs–GaAs–AlxGa1 – xAs...     

Thermoelectric Figure of Merit and Quantum Mobility of Holes in Copper-Doped Antimony-Telluride Single Crystals

Semiconductors - The thermoelectric properties of Sb2 – xCuxTe3 single crystals (0 ≤ x ≤ 0.10) synthesized by the Bridgman method are studied in the temperature...     

A Compact Frequency Diversity Antenna with DGS and SRR Mode Switching for LTE and WLAN/WiMAX Wireless Systems

Wireless Personal Communications - In this article, a novel low profile multi wideband planar monopole antenna is proposed to cover GSM-1800 MHz, WiMAX (3.5/5.5 GHz), WLAN...     

Effect of film thickness on the surface,structural and electrical properties of InAlN films prepared by reactive co-sputtering

InAlN films of different thicknesses (150 nm, 250 nm, 380 nm, 750 nm and 1050 nm) were grown on Si (111) by means of reactive co-sputtering at 300 °C. Surface morphology results indicated an increase in the grains size and their spacing with increase of the film thickness. The surface of InAlN remained smooth with a slight variation in its RMS roughness from 1.29 nm to 6.62 nm by varying the film thickness. X-ray diffraction patterns exhibited InAlN diffraction peaks with preferred orientation along (002) plane in the thickness range 250 nm to 750 nm, however, the preferred orientation of the film was changed towards (101) plane at 1050 nm. An improvement in the crystallinity of InAlN was observed with increase of the film thickness. Electrical characterization revealed a decrease in the film's resistivity by increasing its thickness to 750 nm, however, the resistivity was found to increase at 1050 nm. The electron concentration indicated an increasing trend whereas changes in the electron mobility were found to be inconsistent with increase of the film thickness.     

ITO-free,efficient, and inverted phosphorescent organic light-emitting diodes using a WO3/Ag/WO3 multilayer electrode

We present an indium tin oxide (ITO)-free, bottom-emission inverted phosphorescent organic light-emitting diode (PHOLED) with a maximum luminance of 280,000 cd/m² at 8 V, total maximum current efficiency of 81.4 cd/A, and external quantum efficiency of 22.4%. The inverted OLED structure is composed of glass/WO₃ (30 nm)/Ag (15 nm)/WO₃ (5 nm)/BPhen:15wt% CS₂CO₃ (5 nm)/BPhen (30 nm)/CBP: 8wt% Ir(ppy)₃ (10 nm)/TAPC (50 nm)/WO₃ (5 nm)/Ag (150 nm) multilayers. In this device structure, the WO₃/Ag/WO₃ (WAW) multilayer serving as a transparent cathode demonstrates a low sheet resistance (3.5 Ω/sq) and high optical transmittance (approximately 80%) in a visible light range of 400–600 nm; this multilayer was prepared by thermal evaporation to form a relatively smooth morphology of the conductive thin film on the glass substrate. In addition, an electron-only WAW device was subjected to electrical characterization, and the results revealed that this device exhibited a more efficient electron injection property at the WAW/BPhen:CS₂CO₃ interface than the contact electrode of a standard ITO-based device.     

An Optimal Information Hiding Approach Based on Pixel Value Differencing and Modulus Function

Wireless Personal Communications - This paper introduces the use of rhombus shaped dipole nanoantenna coupled to geometric diode in energy harvesting at 19.4 THz. An...     

10 nm lines and spaces written in HSQ,using electron beam lithography

Hydrogen silsesquioxane (HSQ) is a high-resolution negative-tone inorganic resist with an established resolution below 10 nm. Using 100 keV electron beam lithography, we report the achievement of isolated 6 nm wide lines in 20 nm thick HSQ layers on silicon substrates. We also achieved 10 nm lines and spaces in a 10 nm HSQ layer. This is the smallest pitch (20 nm) achieved to date using HSQ resist. Experiments in order to investigate the effect of KOH based developer on ultimate resolution have been also performed and resulted in 7 nm wide lines. These results, in combination with the good etching resistance of HSQ, prove the versatility of HSQ for nanolithography.     

Functional Dependences of the Maximum Energy Density of the Spectral Component of Stimulated Picosecond Emission by GaAs upon Gain Saturation. The Residual Characteristic Emission Relaxation Time

Semiconductors - During high-power optical picosecond pumping of the GaAs layer of an AlxGa1 – xAs–GaAs–AlxGa1 – xAs heterostructure, stimulated...     

Enhancement of the Stability of Ti and Ni Ohmic Contacts to 4H-SiC with a Stable Protective Coating for Harsh Environment Applications

We report on wafer-level measurements of the long-term stability of Ti and Ni ohmic contacts to n-4H-SiC during thermal treatments in air or air/moisture environments up to 500°C. Contact metallizations with and without a sputtered Ti (20 nm)/TaSi _x (200 nm)/Pt (150 nm) diffusion barrier stack and Ti (20 nm)/TiN (10 nm)/Pt (150 nm)/Ti (20 nm) interconnects were compared. A protective coating consisting of a SiO _x (250 nm)/SiN _y (250 nm) stack deposited by plasma-enhanced chemical vapor deposition (PECVD) was used. The stability of the contact metallizations during long-term thermal treatments in air and air/moisture was studied. The best performance was achieved with Ti ohmic contacts without the Ti/TaSi _x /Pt stack. This system successfully withstood 1000 h thermal treatment at 500°C in air followed by 1000 h at 500°C in air/10% moisture. After the aging, the contact failure ratio was below 1% and the specific contact resistivity amounted to (2.5 ± 1.1) × 10⁻⁴ Ω cm². Scanning electron microscopy (SEM) cross-sectional analysis indicated no degradation in the contact metallization, demonstrating the effectiveness of the SiO _x /SiN _y protective coating in preventing oxidation of the contacts. These results are very promising for applications in harsh environments, where the stability of ohmic contacts is crucial.     

Design of Compact Hybrid Branch Line Coupler (BLC) for GSM Application

Wireless Personal Communications - This paper presents a compact design of a hybrid branch line coupler (BLC) operating at 1.8 GHz frequency for the global system for...     

Non-iterative Coordinated Beamforming for Multicell MIMO Heterogeneous Networks

Wireless Personal Communications - This paper presents ultra-wideband channel characteristics in the presence of float glass slab as obstacle of varied thickness (4 mm, 8 mm,...