Excitation photocapacitance study of EL2 in n-GaAs and its relation to non-stoichiometry

The excitation photocapacitance measurements are performed on n-GaAs to obtain charge transition characteristics of EL2 defects in a full spectral region. It is shown that the threshold photon energy for EL2⁺⁺ to EL2⁺ transition is changed as a function of the primary excitation photon energy. It is also shown that the Frank–Condon shifts (d_FC) changed. It is considered that the lattice relaxation around the EL2 defect is affected by the deviation from the stoichiometric composition.     

EPR studies of point defects in Cu-III–VI2 chalcopyrite semiconductors

EPR and PL spectra were measured to investigate point defects in I–III–VI₂ type chalcopyrite semiconductors where the group I element is Cu. Taking into account various optical spectra, the EPR signals observed were assigned to defect centers involving residual Fe impurities and Cu-vacancies. Some of the point defects were found to form defect-complexes.     

N-type implantation doping of GaN

Doping characteristics of N/Si and N/Ge co-implanted GaN have been systematically investigated. N-type regions were produced in undoped GaN films by the co-implantation and subsequent annealing with an SiO₂ encapsulation layer at high temperatures. The annealing procedures above 1100 and 1200°C were required to achieve an n-type activation for N/Si and N/Ge co-implanted GaN, respectively. The both samples show effective activation efficiencies of 50% after annealing at 1300°C. However, actual Si activation seems to be much higher than the Ge activation due to the different behaviors of implantation-induced damage.     

Conduction type and defect levels of β-FeSi2 films grown by MBE with different Si/Fe ratios

[1 0 0]-oriented β-FeSi₂ films were grown on Si(0 0 1) substrates by molecular beam epitaxy (MBE) with a deposited Si to Fe atomic ratio (Si/Fe ratio) varied from 1.6 to 2.8. It was found that the conduction type of the β-FeSi₂ films changed from p- to n-type between the deposited Si/Fe=2.4 and 2.8. Rutherford Back Scattering (RBS) measurements revealed that the real Si/Fe ratio of β-FeSi₂ is 2.0–2.1 for all the samples after 900°C annealing for 14 h, showing that stoichiometry of the grown films is almost satisfied even though the deposited Si/Fe ratio was away from stoichiometry.     

Dislocation–impurity interaction in Si

The dynamic interaction between dislocations and impurities B, P and Ge in Si with concentrations up to 2.5×10²⁰ cm⁻³ is investigated by the etch-pit technique, in comparison with that of O impurity in Si. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B and P impurities exceeds 1×10¹⁹ cm⁻³, originating from the immobilization by preferential impurity segregation. Dislocation velocity in motion enhances on increasing the concentration in B and P impurities. Neutral impurity Ge has weak effect on dislocation generation and velocity enhancement.     

Characterizations of InxAlyGa1−x−yN alloy systems grown on GaN substrates by molecular-beam epitaxy

In_0.05Al_0.10Ga_0.85N epilayers and Al_0.10Ga_0.90N epilayers have been grown on bulk GaN single crystals and GaN templates by radio-frequency (RF) molecular-beam epitaxy (MBE). Photoluminescence (PL) spectra at different temperatures ranged from 8 to 300 K were measured for these epilayers. The decreasing rates of PL peak intensity of the In_0.05Al_0.10Ga_0.85N epilayers were smaller than those of the Al_0.10Ga_0.90N epilayers. The fluctuations of emission intensities were not observed in the In_0.05Al_0.10Ga_0.85N epilayers by cathodoluminescence observations at 77 K. Our results indicate that In-related effects exist in InAlGaN quaternary alloys on substrates with low-dislocation densities, however, expect that the localization effect related to In-segregation is weak.     

Development of an intelligent design tool for non-stoichiometric compound devices: an example

In this paper, we discuss the idea of intelligent design of thin film CIGS solar cell, and we focus on the methodology of material design. We first introduce the calculation of the neutral defect concentrations of non-stoichiometric CuInSe₂, CuGaSe₂ and ZnO under specific atomic chemical potential conditions, and predict the formation of the order defect compound using the concept of minimization of total free energy, which includes the configurational entropy. This calculation is the main procedure in the material design and the key to the device design and process design. We then calculate the carrier concentrations using multi-level defect statistics and mobilities of these materials of different constitutions. The functions of the intelligent design tool are demonstrated.     

Structure and optical properties of ZnSeO alloys with O composition up to 6.4%

II–VI-O type alloy semiconductor ZnSeO (O composition up to 6.4%) is grown by molecular beam epitaxy. O composition increases with O₂ flow rate. Several XRD peaks are observed when O composition is 2–4%, indicating phase separation. Growth at low temperature results in higher O composition. Photoluminescence intensity of ZnSeO lattice matched to GaAs is much stronger than that of ZnSe and peak shifts to lower energies with increasing O composition. Photoreflectance spectroscopy is performed to investigate the band gap energy. The band gap energy investigated by photoreflectance decreases with increasing O composition due to large band gap bowing even when phase separation occurs. The bowing parameter is estimated as 8.4 eV.     

Effects of annealing of MgO buffer layer on structural quality of ZnO layers grown by P-MBE on c-sapphire

We have investigated effects of annealing of MgO buffer layer on structural quality of ZnO layers grown by plasma assisted molecular beam epitaxy on c-sapphire. ZnO layers were characterized by atomic force microscopy, high resolution X-ray diffraction (HRXRD) and cross sectional transmission electron microscopy (TEM). AFM images show that annealing of a low temperature (LT)-MgO buffer at high temperatures enhanced the surface migration of adatoms, leading to the formation of larger terraces and smoother surface morphology, as indicated by the reduction of rms values of roughness from 0.6 to 0.3 nm. HRXRD and TEM experiments reveal that the dislocation density of ZnO layers is reduced from 5.3×10⁹ to 1.9×10⁹ cm⁻² by annealing a LT-MgO buffer. All of those features indicate the structural quality of ZnO layers was improved by annealing a LT-MgO buffer layer.     

Photoluminescence and Electroluminescence from Tris(8‐ hydroxyquinoline)aluminum Nanowires Prepared by Adsorbent‐Assisted Physical Vapor Deposition

Single‐crystalline nanowires are successfully prepared from a small organic functional molecule, tris(8‐hydroxyquinoline)aluminum (Alq₃), by an adsorbent‐assisted physical‐vapor‐deposition method. The introduction of adsorbents can decrease the sublimation temperature of Alq₃, and slow the weight‐loss process markedly, which is proven to be indispensable in improving the uniformity of the as‐prepared Alq₃ nanowires. Measurements of the optical properties reveal that the absorption spectra of the Alq₃ nanowires show an obvious blue‐shift with decreasing diameter. The photoluminescence vibrational fine structure emerges and becomes pronounced with increasing excitation energy, which is attributed to the ordered orientation of the Alq₃ molecules in the nanowires. Furthermore, the Alq₃ nanowires are fabricated into an electroluminescent device, which has an obvious size‐dependent performance.     

有机薄膜电致发光的回顾和展望

综述了有机薄膜电致发光（ＯＴＦＥＬ）的发展过程，总结了ＯＴＦＥＬ的四种器件结构和工作原理，介绍了器件的制备并了选择有机发光材料的基本原则，文末展望了ＯＴＦＥＬ的应用前景。     

针对高光谱图像的目标分类方法现状与展望

进入21世纪,遥感技术成为一项非常重要的空间成像技术。高光谱图像分类是遥感技术应用中非常重要的一项研究内容,在民用和军用上都实现了应用。高光谱图像分类是通过给每个像元添加分类标签,最终达到区分地物并且识别目标的目的。本文简要阐述了高光谱图像的分类过程及其面临的主要问题;在总结前人研究的基础上归纳了4类主要的高光谱图像分类策略,简要分析了其优缺点及适用范围;分析了近年来出现的新型分类器及其优化方法。最后,对于高光谱图像分类研究存在的主要困难进行了总结,并对未来发展的方向进行了展望。     

Theoretical analysis of microscopic strain distribution and phase stability of Zn chalcogenide alloys using valence force field model

Microscopic strain distribution in II–VI–O alloy systems is theoretically analyzed using the valence force field model. ZnSeO and ZnSO alloys have a maximum strain energy at O composition of 50% due to a large lattice mismatch between constituting materials. Zn–Se bond length decreases with increasing O composition and Zn–O bond increases with decreasing O composition. Se atoms rather than O are easier to move in order to reduce strain energy because of the small elastic constant of ZnSe compared with ZnO. The lattice deformation occurs mainly at tetrahedra containing O–Zn–Se bonds with Zn atom in the center.     

Nonstoichiometry and point defects in nonlinear optical crystals ABC2

Using thermodynamic calculation, the equilibrium concentrations of point defects in ZnGeP₂ and CdGeAs₂ depending on a liquidus temperature are obtained. The conclusion about a high degree of compensation of native donors and acceptors is made. The methods of a model pseudo-potential and large unit cell are used for investigation of deep levels created by vacancies and antisites in the forbidden band of ZnGeP₂. Optical transitions with participation of the defects are defined. It is supposed the possibility of conditions favourable for mid-IR optical absorption, as a result of the interaction of ionized zinc vacancies with GeP clusters.     

Dopant diffusion in GaP and related compounds: recent results and new considerations

The paper recalls some major progress made over the past decade in the understanding of dopant diffusion in compound semiconductors. However, existing models to describe the diffusion behaviour of acceptors such as e.g. Zn and Cd in III–V compounds reveal serious discrepancies with respect to the whole body of available experimental data. We present new experiments on GaP and an alternative theoretical approach which both may contribute to find a consistent interpretation.     

Transcoding of MPEG bitstreams

This paper discusses the problem of transcoding as it may occur in, for instance, the following situation. Suppose a satellite transmits an MPEG-compressed video signal at say 9 Mbit/s. This signal must be relayed at a cable head end. However, since the cable capacity is only limited, the cable head end will want to relay this incoming signal at a lower bit-rate of, say, 5 Mbit/s. The problem is how to convert a compressed video signal of a given bit-rate into a compressed video signal of a lower bit-rate. The specific transcoding problem discussed in this paper is referred to as bit-rate conversion. Basically, a transcoder used for such a purpose will consist of a cascaded decoder and encoder. It is shown in the paper that the complexity of this combination can be significantly reduced. The paper also investigates the loss of picture quality that may be expected when a transcoder is in the transmission chain. The loss of quality as compared to that resulting in the case of transmission without a transcoder is studied by means of computations using simplified models of the transmission chains and by means of using computer simulations of the complete transmission chain. It will be shown that the presence of two quantizers, i.e. cascaded quantization, in the transmission chain is the main cause of extra losses, and it will be shown that the losses in terms of SNR will be some 0.5 – 1.0 dB greater than in the case of a transmission chain without a transcoder.     

Thin gate and analog capacitor dielectrics for submicron device fabrication

The miniaturization of devices in ULSI circuits are accompanied by shrinking vertical, as well as horizontal, device parameters such as junction depth, lateral impurity diffusion and film thicknesses. This is achieved by decoupling process steps,i.e. processing at a reduced thermal budget. However, as device dimensions decrease, greater demand in transistor noise immunity and reliability may not be achievable with low-temperature (<900° C) oxidation processes. Low temperature CVD ONO (oxide-nitride-oxide) dielectrics have been evaluated for applications in ULSI gate as well as capacitor structures. Time dependent dielectric breakdown data have shown that ONO has longer lifetime than thermal oxide of equivalent thickness. Such stacked dielectrics nevertheless result in complex processing steps. With the advances in rapid thermal processing equipment today, rapid thermal oxide (RTO) has been shown to offer potential benefits of high temperature without significant addition to the overall thermal budget. We have shown that transistors with RTO gate oxides exhibit longer lifetime and lower noise compared to those with furnace grown gate oxides. We have also shown that interpoly RTO oxides have remarkable dielectric strength of >8 MV/cm. For enhanced radiation hardness and impurity masking capability as well as higher permittivity, rapid thermal nitrided oxides may be a potential choice deserving further evaluation. These nitrided oxides must be reoxidized to reduce densities of interface states and electron traps created during the nitridation process.     

Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation

Er and O co-doped Si structures have been prepared using molecular-beam epitaxy (MBE) with fluxes of Er and O obtained from Er and silicon monoxide (SiO) evaporation in high-temperature cells. The incorporation of Er and O has been studied for concentrations of up to 2×10²⁰ and 1×10²¹ cm⁻³, respectively. Surface segregation of Er can take place, but with O co-doping the segregation is suppressed and Er-doped layers without any indication of surface segregation can be prepared. Si_1−xGe_x and Si_1−yC_y layers doped with Er/O during growth at different substrate temperatures show more defects than corresponding Si layers. Strong emission at 1.54 μm associated with the intra-4f transition of Er³⁺ ions is observed in electroluminescence (EL) at room temperature in reverse-biased p–i–n-junctions. To optimize the EL intensity we have varied the Er/O ratio and the temperature during growth of the Er/O-doped layer. Using an Er-concentration of around 1×10²⁰ cm⁻³ we find that Er/O ratios of 1 : 2 or 1 : 4 give higher intensity than 1 : 1 while the stability with respect to breakdown is reduced for the highest used O concentrations. For increasing growth temperatures in the range 400–575°C there is an increase in the EL intensity. A positive effect of post-annealing on the photoluminescence intensity has also been observed.     

Color Tuning in Benzo[1,2,5]thiadiazole‐Based Small Molecules by Amino Conjugation/Deconjugation: Bright Red‐Light‐Emitting Diodes

Bipolar compounds (referred to in general as btza ) containing a benzo[1,2,5]thiadiazole core and peripheral diarylamines and/or 4‐tert‐butylphenyl moieties have been synthesized via palladium‐catalyzed cross‐coupling reactions of 4,7‐dibromobenzo[1,2,5]thiadiazole with appropriate stannyl compounds. These compounds are fluorescent and the emission color ranges from green to red. The fluorescence of the compounds originates from a charge‐transfer process and exhibits solvatochromism. These red‐light‐emitting materials are amorphous and devices of different configurations were fabricated: I) ITO/ btza /TPBI/Mg:Ag; II) ITO/ btza /Alq₃/Mg:Ag; III) ITO/ btza /Mg:Ag (where ITO = indium tin oxide, TPBI = 1,3,5‐tris(N‐phenylbezimidazol‐2‐yl)benzene, and Alq₃ = tris(8‐hydroxyquinoline)aluminum). The performance of some of the red‐light‐emitting devices appears to be very promising.     

Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy

We investigated the characteristics of deep levels in heavily Al-doped ZnSe layers grown by molecular beam epitaxy, whose electron concentration is saturated. Low-temperature photoluminescence showed deep level emission around 2.25 eV, and its intensity increases with Al concentration. This deep-level is located at 0.55 eV above valence band maximum, implying a point defect such as a self-activated center, Al_ZnV_Zn. Deep-level transient spectroscopy was used to investigate non-radiative trap centers in Al-doped ZnSe layers, and showed the presence of two electron trap centers at depths of 0.16 and 0.80 eV below conduction band minimum, with the electron capture cross-sections of 810⁻¹² and 1×10⁻⁷ cm², respectively. It is suggested the carrier compensation in heavily Al-doped ZnSe layers be ascribed to the deep levels.