共查询到19条相似文献,搜索用时 94 毫秒
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以苯甲醚为溶剂,采用旋涂法制备PMMA(聚甲基丙烯酸甲酯)转移层膜。当PMMA的质量分数为5%、旋涂速度为2000~6000r/min时,转移层膜的厚度为90~150nm,粗糙度为0.3nm,可满足纳米压印要求。采用接触角测量仪测试计算出PMMA、PS转移层膜的表面能,并通过转移层膜与压印胶之间的粘附功和界面张力的计算,评价了PMMA、PS和Si片对压印胶的润湿和粘附性能。结果表明,PMMA膜可改善压印胶在基片上的润湿铺展性能和粘附性能,而PS膜虽能改善基片的润湿铺展性能,却不利于压印胶的粘附。 相似文献
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R.Pelzer P.Lindner T.Glinsner B.Vratzov C.Gourgon S.Landist P.Kettner C.Schaefer 《电子工业专用设备》2004,33(7):3-9
纳米压印光刻技术已被证实是纳米尺寸大面积结构复制的最有前途的下一代技术之一。这种速度快、成本低的方法成为生物化学、μ级流化学、μ-TAS和通信器件制造以及纳米尺寸范围内广泛应用的一种日渐重要的方法,如生物医学、纳米流体学、纳米光学应用、数据存储等领域。由于标准光刻系统的波长限制、巨大的开发工作量、以及高昂的工艺和设备成本,纳米压印光刻技术可能成为主流IC产业中一种真正富有竞争性方法。对细小到亚10nm范围内的极小复制结构,纳米压印技术没有物理极限。从几种纳米压印光刻技术中选择两种前景广阔的方法——热压印光刻(HEL)和紫外压印光刻(UV-NIL)技术给予介绍。两种技术对各种各样的材料以及全部作图的衬底大批量生产提供了快速印制。重点介绍了HEL和UV-NIL两种技术的结果。全片压印尺寸达200mm直径,图形分辨力高,拓展到纳米尺寸范围。 相似文献
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气体压力施压是实现纳米压印技术中将模板压入转移介质的重要技术路径,在克服应力不均匀、保护基片和模板等方面优势明显。报道了一种旨在提高压印压力均匀性、低压力施压的真空负压紫外固化纳米压印系统的研制。制备真空腔室,腔室顶部利用弹性橡胶环结合紫外透过性好的SiO2玻璃与腔体连接,采用抽真空的方式形成负压,腔室外大气压强通过SiO2玻璃均匀地作用到压印模板上,将其压入液态紫外敏感光刻胶中,再采用紫外光固化光刻胶,分离后实现模板图形向基板的转移。压印力大小取决于腔室内外的气体压强差,通过调节腔室内部气压大小改变施加在模板上的实际压力,内部气压大小通过连通气压表观察。图形转移实验结果表明,所研制纳米压印样机系统能够实现图形的高保真转移,在基片上形成光刻胶材质的结果图形,500nm特征线宽图形转移实验结果清晰,在较大面积基片上的压印压力均匀性良好。 相似文献
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Namil Koo Martin OttoJung Wuk Kim Jun-Ho JeongHeinrich Kurz 《Microelectronic Engineering》2011,88(6):1033-1036
We report on a two step soft UV nanoimprint process termed “Press and Release Imprint (PRI) that enables the reduction of both the mold deformation and the local variation of the residual layer thickness, thereby allowing high fidelity pattern replication with a uniform local residual layer thickness. The effect of imprint pressure on the mold deformation, local variation of residual layer thickness as well as required mold release time has been investigated for microscale patterns in the range of 10-100 μm. The potentials of PRI are demonstrated by high fidelity replication of micro-patterns with a uniform residual layer of minimum thickness. 相似文献
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Ali Z. KhokharAinhoa Gaston Isabel ObietaNikolaj Gadegaard 《Microelectronic Engineering》2011,88(11):3347-3352
UV-based nanoimprint lithography (UV-NIL) is a cheap and fast way to imprint patterns ranging from nanometres to micrometres. However, commonly used equipment can be expensive and require a clean room infrastructure. Here we present the design and testing of a simple UV-NIL system based on a light emitting diode. The current design permits imprints of 10 × 10 mm2 in size using a 25 × 25 mm2 master. This printer can be used in a semi-clean environment such as a laminar flow bench. The imprinter was used to imprint photoresists as well as UV sensitised hydrogels. The best results were obtained using SU-8 photoresist with features down to 50 nm in size, only limited by the imprint master. Patterns in SU-8 resist were also transferred into silicon substrates by reactive ion etching demonstrating its full potential as a lithographic tool. 相似文献
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Thermal step and stamp nanoimprint lithography (SSIL) offers an alternative to fabricate transparent polymer stamps for UV-imprinting. The fabrication process does not require any other subsequent steps, e.g. dry etching or anti adhesive coating.In this work, we have manufactured UV-stamp by combining patterns of two different silicon masters. The patterns of the silicon masters were transferred into resin coated quartz plate by sequential imprinting. The first master consisted gratings with 50 nm features and the second master consisted dot arrays of 350 nm diameter features. The novel idea is the ability to create a large UV-stamp using a combination of small masters. Thus fabricated UV-stamps were used for demonstrating step and repeat UV-imprinting. The quality of the UV-stamps and imprints were analyzed by AFM. High fidelity patterns were achieved in respect to patterns in the original silicon master. 相似文献
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Jun-hyuk Choi Sung-un Jung Dae-geun Choi Jun-ho Jeong Eung-sug Lee 《Microelectronic Engineering》2008,85(1):195-201
As a potential candidate for the next generation of nanolithography, nanoimprint lithography (NIL) has drawn ever-increasing worldwide attention. It involves physical contact to overcome the optical limits occurring in sub-100 nm photolithography. Affordable tool cost is one of major attractive points of NIL. This work proposes the idea of incorporating carbon nanotubes (CNTs) in the resin used for ultraviolet nanoimprinting (UV-NIL). CNTs can make the resin electrically conductive when mixed with it. Patterns imprinted in the CNT-mixed resist can then be used to replace conductive metal structures directly. This enhances the productivity of basic UV-NIL where the imprinted patterns are used as sacrificial etch masks. In this work, several types of CNTs were purified chemically and dispersed before being mixed with UV-NIL resin using ultrasonic vibration. On drops of CNT-mixed resin, soft UV-NIL was performed using a polydimethylsiloxane (PDMS) stamp with a minimum feature size in the range of 200 nm. Even with increased resin viscosity due to the addition of CNTs, UV imprinting down to 200 nm was successfully done with moderate pattern fidelity. The loading rate of nanotubes should be minimized to prevent the increased viscosity from degrading the pattern transfer resolution. The electrical conductivity of CNT-mixed resist increases with the loading of CNTs. Therefore, the trade-off between the electrical properties and pattern transfer resolution needs to be optimized carefully. 相似文献
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软模板的制作是紫外纳米压印中关键的技术,模版的分辨率直接决定了压印图形的最小分辨率。使用具有高度均匀、100nm级孔洞阵列结构的多孔氧化铝作为母版,使用基于液态浇铸的硅油稀释聚二甲基硅氧烷(硅油和聚二甲基硅氧烷的质量比为1:2)法制备出具有规则点阵结构的软模板。通过SEM和AFM表征发现,特征图形得到了有效转移,特征尺度保持在100nm左右。相对于传统的模板制备方法,此方法成本低、流程简单、适合大规模生产,是一种非常有前途的软模板制备方法。 相似文献
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本文研究晶格矢配较大的Ⅲ-Ⅴ族化合物向Si基底转移薄层的技术,为此制备了Si/SiO2/Si结构的应力缓冲衬底。利用智能切割(smart-cut)技术制备薄层GaAs并以低温SiO2层过渡与应力缓冲衬底相键合,达到GaAs向Si基底的转移目的。并对结果进行了分析和讨论,认为该技术是可行的。同时特别强调了低温淀积SiO2层的完美性对最终转移的GaAs薄层的完整性是重要的。 相似文献
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Jukka Viheriälä Juha Tommila Tomi Leinonen Mihail Dumitrescu Lauri Toikkanen Tapio Niemi Markus Pessa 《Microelectronic Engineering》2009,86(3):321-324
We show how to use a modified poly-dimethyl-siloxane (PDMS) soft stamp to reduce pattern deformation and residual layer thickness in soft UV-nanoimprint lithography. A soft stamp thinned with toluene reduces the residual layer of a resist by as much as 50% compared to an unthinned stamp. We apply the soft UV-nanoimprint to prepare nanopatterned waveguides for a single-frequency diode laser. This laser operates with a side-mode suppression ratio of 50 dB, which indicates that the patterns are precise and uniform over the whole imprint field. To the best of our knowledge, this is the first single-frequency laser fabricated by soft UV-nanoimprint technology. 相似文献