Measured mixer noise temperature and conversion loss of a cryogenic Schottky diode mixer near 800 GHz

We accurately measured the noise temperature and conversion loss of a cryogenically cooled Schottky diode operating near 800 GHz, using the UCB/MPE Submillimeter Receiver at the James Clerk Maxwell Telescope. The receiver temperature was in the range of the best we now routinely measure, 3150 K (DSB). Without correcting for optical loss or IF mismatch, the raw measurements set upper limits ofT _M=2850 K andL _M=9.1 dB (DSB), constant over at least a 1 GHz IF band centered at 6.4 GHz with an LO frequency of 803 GHz. Correction for estimated optical coupling and mismatch effects yieldsT _M=1600 K andL _M=5.5 dB (DSB) for the mixer diode itself. These values indicate that our receiver noise temperature is dominated by the corner cube antenna's optical efficiency and by mixer noise, but not by conversion loss or IF mismatch. The small fractional IF bandwidth, measured mixer IF band flatness from 2 to 8 GHz, and similarly good receiver temperatures at other IF frequencies imply that these values are representative over a range of frequencies near 800 GHz.     

A 210–280 GHz sis heterodyne receiver for the James Clerk Maxwell Telescope part I: Design and performance

We describe the design and performance of a 210–280 GHz SIS heterodyne receiver built for use on the Maxwell Telescope. The mixer utilises a lead alloy SIS tunnel junction, mounted in 4∶1 reduced height rectangular waveguide, and is tuned with a backshort in 2∶1 reduced height guide. The receiver has a receiver noise temperature of <200K (DSB) across the RF band from 210–270 GHz, with a best noise temperature measured in the laboratory of 113K (DSB) at 231 GHz. A prototype version of this receiver was successfully operated on the telescope in May 1989. By direct intercalibration with a Schottky diode receiver we deduced a best receiver noise temperature of 140K (DSB) at 245 GHz. Discrepancies between this figure and that derived from broad band thermal load calibration are discussed in the accompanying paper (Little et al., 1992, this issue).     

A lownoise 665 GHz SIS quasi-particle waveguide receiver

We report recent results on a 565–690 GHz SIS heterodyne receiver employing a 0.36µm² Nb/AlO _x /Nb SIS tunnel junction with high quality circular non-contacting backshort and E-plane tuners in a full height waveguide mount. No resonant tuning structures have been incorporated in the junction design at this time, even though such structures are expected to help the performance of the receiver. The receiver operates to at least the gap frequency of Niobium, ≈ 680 GHz. Typical receiver noise temperatures from 565–690 GHz range from 160K to 230K with a best value of 185K DSB at 648 GHz. With the mixer cooled from 4.3K to 2K the measured receiver noise temperatures decreased by approximately 15%, giving roughly 180K DSB from 660 to 680 GHz. The receiver has a full 1 GHz IF passband and has been successfully installed at the Caltech Submillimeter Observatory in Hawaii.     

A Low-Noise 230 GHz SIS Receiver for Radio Astronomy Employing Untuned Nb/AlOx/Nb Tunnel Junctions

A heterodyne receiver based on a ～1/3 reduced height rectangular waveguide SIS mixer with two mechanical tuners has been built for astronomical observations of molecular transitions in the 230 GHz frequency band. The mixer used an untuned array (ωR_nC_j≈3, R_n≈70 Ω) of four Nb/AIOx/Nb tunnel junctions in series as a nonlinear mixing element. A reasonable balance between the input and output coupling efficiencies has been obtained by choosing the junction number N=4. The receiver exhibits DSB (Double Side Band) noise temperature around 50 K over a frequency range of more than 10 GHz centered at 230 GHz. The lowest system noise temperature of 38 K has been recorded at 232.5 GHz. Mainly by adjusting the subwaveguide backshort, the SSB (Single Side Band) operation with image rejection of ≥ 15 dB is obtained with the noise temperature as low as 50 K. In addition, the noise contribution from each receiver component has been studied further. The minimum SIS mixer noise temperature is estimated as 15 K, pretty close to the quantum limit ?v/k～11 K at 230 GHz. It is believed that the receiver noise temperatures presented are the lowest yet reported for a 230 GHz receiver using untuned junctions.     

Simple 1 MM Receivers with a Fixed Tuned Double Sideband SIS Mixer and a Wideband INP MMIC Amplifier

We report on techniques to broaden the intermediate frequency (IF) bandwidth of the Berkeley‐Illinois‐Maryland Array (BIMA) 1mm Superconductor‐Insulator‐Superconductor (SIS) heterodyne receivers by combining fixed tuned Double Side Band (DSB) SIS mixers and wideband Monolithic Microwave Integrated Circuit (MMIC) IF amplifiers. To obtain the flattest receiver gain across the IF band we tested three schemes for keeping the mixer and amplifier as electrically close as possible. In Receiver I, we connected separate mixer and MMIC modules by a 1 ″ stainless steel SMA elbow. In Receiver II, we integrated mixer and MMIC into a modified BIMA mixer module. In Receiver III, we devised a thermally split block in which mixer and MMIC can be maintained at different temperatures–in this receiver module the mixer at 4 K sees very little of the 10–20 mW heat load of the biased MMIC at 10 K. The best average receiver noise we achieved by combining SIS mixer and MMIC amplifier is 45 ‐50 K DSB for ν_LO = 215–240 GHz and below 80 K DSB for ν_LO = 205 ‐ 270 GHz. Over an IF frequency band of 1 – 4 GHz we have demonstrated receiver DSB noise temperatures of 40 – 60 K. Of the three receiver schemes, we feel Receiver III shows the most promise for continued development.     

Superconductor-Insulator-Superconductor Mixers for the 2 mm Band (129-174 GHz)

We present the design, construction and performance of backshort-tuned Single Side Band (SSB) and of fixed-tuned Double Side Band (DSB) Superconductor-Insulator-Superconductor (SIS) mixers covering the frequency range of 129-174 GHz (2 mm band). Receivers employing these SSB mixers have been continuously operated for astronomical observations on the six antennas of the IRAM Plateau de Bure Intereferometer (PdBI) since 2007 and on the IRAM 30 m Pico Veleta (PV) radio telescope since 2009. The DSB version of the mixer was employed in a prototype of a four-element focal plane array that was tested on the IRAM 30 m radio telescope. Both SSB and DSB mixers employ the same chip and are based on a wideband single ended probe transition from WR6 full-height waveguide to thin-film microstrip line and on a series array of two Nb/Al-AlO_x/Nb junctions. The measured receiver noise for the four-element DSB mixer array pumped by a Gunn oscillator cascaded with a frequency doubler was in the range 25-35 K across the 135-168 GHz LO band. The PdBI and PV receivers equipped with the SSB mixers have measured noise temperatures in the range of 30 K to 60 K and an image sideband rejection below -10 dB over the 129-174 GHz RF band. The measurement results agree well with the predictions obtained through detailed simulations of the SIS receivers based on the standard theory of quantum mixing.     

Wide-band low noise MM-wave SIS mixers with a single tuning element

Several SIS quasiparticle mixers have been designed and tested for the frequency range from 80 to 115 GHz. The sliding backshort is the only adjustable RF tuning element. The RF filter reactance is used as a fixed RF matching element. A mixer which uses a single 2×2 μm² Pb-alloy junction in a quarter-height waveguide mount has a coupled conversion gain of G_M(DSB)=2.6±0.5 dB with an associated noise temperature of T_M(DSB)=16.4±1.8 K at the best DSB operation point. The receiver noise temperature T_R(DSB) is 27.5±0.8 K for the mixer test apparatus. This mixer provides a SSB receiver noise temperature below 50 K over the frequency range from 91 to 96 GHz, the minimum being T_R(SSB)=44±4 K. Another mixer with an array of five 5×5 μm² junctions in series in a full-height wave-guide mount has much lower noise temperature T_M(DSB)=6.6±1.6 K, but less gain G_M(DSB)=?5.1±0.5 dB.     

An SIS waveguide heterodyne receiver for 600 HGz-635 GHz

A waveguide SIS heterodyne receiver using a Nb/AlO_X/Nb junction has been built for astronomical observations of molecular transitions in the frequency range 600 GHz - 635 GHz, and has been successfully used at the Caltech Submillimeter Observatory (CSO). We report double sideband (DSB) receiver noise temperatures as low as 245 K at 600 GHz -610 GHz, and near 300 K over the rest of the bandwidth. These results confirm that SIS quasiparticle mixers work well at submillimeter-wave frequencies corresponding to photon energies of at least 90% of the superconductor energy gap. In addition, we have systematically investigated the effect on the receiver performance of the overlap between first-order and second-order photon steps of opposite sign at these frequencies. The receiver noise increases by as much as 40% in the region of overlap. We infer potential limitations for operating submillimeter-wave Nb/AlO_x/Nb mixers.     

A low-noise SIS receiver measured from 480 GHz to 650 GHz using Nb junctions with integrated RF tuning circuits

A heterodyne receiver using an SIS waveguide mixer with two mechanical tuners has been characterized from 480 GHz to 650 GHz. The mixer uses either a single 0.5 × 0.5 µm² Nb/AlO_x/Nb SIS tunnel junction or a series array of two 1 µm² Nb tunnel junctions. These junctions have a high current density, in the range 8 – 13 kA/cm². Superconductive RF circuits are employed to tune the junction capacitance. DSB receiver noise temperatures as low as 200 ± 17 K at 540 GHz, 271 K ± 22 K at 572 GHz and 362 ± 33 K at 626 GHz have been obtained with the single SIS junctions. The series arrays gave DSB receiver noise temperatures as low as 328 ± 26 K at 490 GHz and 336 ± 25 K at 545 GHz. A comparison of the performances of series arrays and single junctions is presented. In addition, negative differential resistance has been observed in the DC I–V curve near 490, 545 and 570 GHz. Correlations between the frequencies for minimum noise temperature, negative differential resistance, and tuning circuit resonances are found. A detailed model to calculate the properties of the tuning circuits is discussed, and the junction capacitance as well as the London penetration depth of niobium are determined by fitting the model to the measured circuit resonances.     

180–425 GHz low noise SIS waveguide receivers employing tuned Nb/AIO x /Nb tunnel junctions

We report recent results on a 20% reduced height 270–425 GHz SIS waveguide receiver employing a 0.49 µm² Nb/AlO _x /Nb tunnel junction. A 50% operating bandwidth is achieved by using a RF compensated junction mounted in a two-tuner reduced height waveguide mixer block. The junction uses an “end-loaded” tuning stub with two quarter-wave transformer sections. We demonstrate that the receiver can be tuned to give 0–2 dB of conversion gain and 50–80% quantum efficiency over parts of it's operating range. The measured instantaneous bandwidth of the receiver is ≈ 25 GHz which ensures virtually perfect double sideband mixer response. Best noise temperatures are typically obtained with a mixer conversion loss of 0.5 to 1.5 dB giving uncorrected receiver and mixer noise temperatures of 50K and 42K respectively at 300 and 400 GHz. The measured double sideband receiver noise temperature is less than 100K from 270 GHz to 425 GHz with a best value of 48K at 376 GHz, within a factor of five of the quantum limit. The 270–425 GHz receiver has a full 1 GHz IF passband and has been successfully installed at the Caltech Submillimeter Observatory in Hawaii. Preliminary tests of a similar junction design in a full height 230 GHz mixer block indicate large conversion gain and receiver noise temperatures below 50K DSB from 200–300 GHz. Best operation is again achieved with the mixer tuned for 0.5–1.5 dB conversion loss which at 258 GHz resulted in receiver and mixer noise temperature of 34K and 27K respectively.     

A 275–425-GHz Tunerless Waveguide Receiver Based on AlN-Barrier SIS Technology

We report on a 275-425-GHz tunerless waveguide receiver with a 3.5-8-GHz IF. As the mixing element, we employ a high-current-density Nb-AlN-Nb superconducting-insulating-superconducting (SIS) tunnel junction. Thanks to the combined use of AlN-barrier SIS technology and a broad bandwidth waveguide to thin-film microstrip transition, we are able to achieve an unprecedented 43% instantaneous bandwidth, limited by the receiver's corrugated feedhorn. The measured double-sideband (DSB) receiver noise temperature, uncorrected for optics loss, ranges from 55 K at 275 GHz, 48 K at 345 GHz, to 72 K at 425 GHz. In this frequency range, the mixer has a DSB conversion loss of 2.3 plusmn1 dB. The intrinsic mixer noise is found to vary between 17-19 K, of which 9 K is attributed to shot noise associated with leakage current below the gap. To improve reliability, the IF circuit and bias injection are entirely planar by design. The instrument was successfully installed at the Caltech Submillimeter Observatory (CSO), Mauna Kea, HI, in October 2006.     

An 85-116 GHz SIS receiver using inductively shunted edge junctions

A superconductor-insulator-superconductor (SIS) mixer with a broadband integrated tuning structure is described. The mixer is tunable from 85 to 116 GHz and at 114 GHz has a noise temperature ⩽5.6 K double sideband (DSB) and unity DSB conversion gain. The mixer noise temperature is less than or comparable to the photon noise temperature hf/k≈5.5 K. Referred to the mixer input flange, the receiver noise temperature is ⩽9.5 K DSB when operated with an L -band HEMT (high-electron-mobility transistor) IF amplifier. Saturation measurements have been made using CW and broadband noise sources     

A low noise 230 GHz heterodyne receiver employing 0.25-μm2 area Nb-AlOx-Nb tunnel junctions

The authors report recent results for a full-height rectangular waveguide mixer with an integrated IF matching network. Two 0.25 μm ² Nb-AlO_x-Nb superconducting-insulating-superconducting (SIS) tunnel junctions with a current density of ≈8500 A/cm² and ωRC of ≈2.5 at 230 GHz have been tested. One of these quasiparticle tunnel junctions is currently being used at the Caltech Submillimeter Observatory in Hawaii. Detailed measurement of the receiver noise have been made from 200-290 GHz for both junctions at 4.2 K. The lowest receiver noise temperatures were recorded at 239 GHz, measuring 48 K DSB at 4.2 K and 40 K DSB at 2.1 K. The 230-GHz receiver incorporates a one-octave-wide integrated low-pass filter and matching network which transforms the pumped IF junction impedance to 50 Ω over a wide range of impedances     

230 and 492 GHz low noise sis waveguide receivers employing tuned Nb/AlOx/Nb tunnel junctions

We report results on two full height waveguide receivers that cover the 200–290 GHz and 380–510 GHz atmospheric windows. The receivers are part of the facility instrumentation at the Caltech Submillimeter Observatory on Mauna Kea in Hawaii. We have measured receiver noise temperatures in the range of 20K–35K DSB in the 200–290 GHz band, and 65–90K DSB in the 390–510 GHz atmospheric band. In both instances low mixer noise temperatures and very high quantum efficiency have been achieved. Conversion gain (3 dB) is possible with the 230 GHz receiver, however lowest noise and most stable operation is achieved with unity conversion gain. A 40% operating bandwidth is achieved by using a RF compensated junction mounted in a two-tuner full height waveguide mixer block. The tuned Nb/AlO _x /Nb tunnel junctions incorporate an “end-loaded” tuning stub with two quarter-wave transformer sections to tune out the large junction capacitance. Both 230 and 492 GHz SIS junctions are 0.49µm² in size and have current densities of 8 and 10 kA/cm² respectively. Fourier Transform Spectrometer (FTS) measurements of the 230 and 492 GHz tuned junctions show good agreement with the measured heterodyne waveguide response.     

High Doping Density Schottky Diodes in the 3MM Wavelength Cryogenic Heterodyne Receiver

The paper describes a 3mm cryogenic mixer receiver using high doping density (“room-temperature”) Schottky diodes. The measured equivalent noise temperature T_eq of the diodes is 109 K at 20 K, which is much higher than the T_eq of the low doping density (“cryogenic”) diodes. In spite of this, the double-sideband (DSB) noise temperature of the cryogenic receiver developed is 55 K at 110 GHz, owing to the low conversion loss of the mixer and ultra-low noise of the PHEMT IF amplifier. This is the lowest noise temperature ever reported for a Schottky diode mixer receiver. The results obtained are useful for the development of submm receivers in which high doping density Schottky diodes are used.     

A Very Low-Noise Integrated 3MM-Wave Schottky Diode Mixer and PHEMT IF Amplifier

An integrated 3mm-wave Schottky diode mixer and pseudomorphic high-electron-mobility transistor (PHEMT) IF amplifier with record noise performance at room temperature is described. The design has shown the room-temperature double-sideband (DSB) receiver noise temperature T _R ^DSB of 190 K at 100 GHz due to a very low conversion loss in the full-height waveguide mixer and an ultra-low noise of the PHEMT IF amplifier. The receiver noise temperature has been reduced by a factor of 1.5 in comparison with the best previously reported 3mm-wave Schottky diode mixer receiver.     

A 350GHz Radial-Probe SIS Mixer for Astronomical Imaging Arrays

We have developed a 330-370GHz SIS mixer for small-format, heterodyne, astronomical imaging arrays. Fixed-tuned broadband operation is achieved by means of a superconducting radial waveguide probe. A horn-reflector antenna provides high-efficiency optical coupling. Using a variable-temperature cryogenic noise source, we measured a DSB system noise temperature of 32±1K. The mixer contributes 3±3K, supporting the theoretically-predicted result that the noise temperature of a DSB mixer can be less than hω/2κ (8.6K)     

0.22 THz宽带混频电路研究

基于中国电子科技集团公司第十三研究所的反向并联肖特基二极管,采用电磁场和电路软件联合仿真,完成了0.22 THz分谐波混频电路设计。在固定中频输出频率10 MHz的条件下测试了混频电路的变频损耗,在175~235 GHz共60 GHz带宽内双边带变频损耗小于15 dB,在196 GHz处最佳变频损耗为8.5 dB。测试结果与仿真结果趋势吻合良好。基于冷热负载,测试了分谐波混频电路的噪声温度,当本振功率为5.7 mW时,在216 GHz处双边带噪声温度为1 200 K。     

A Broad-Band Low-Noise Schottky Diode Full-Height Waveguide Mixer from 80 to 115 GHz

The RF matching problem in the input circuit of the mm-wavelength whisker contacted Schottky diode mixer is studied. The experimental results, obtained on the 3mm wavelength mixer mounts in the broad band of frequencies from 80 to 115 GHz are presented. It is shown that advantage in the receiver noise temperature may be realized by the use of a full-height instead of 1/4-reduced-height waveguide because of reduction loss in the mixer input circuit even beginning from the 3mm-wavelength. With a full-height waveguide mixer the double sideband (DSB) receiver noise temperature is 300 divided by 350K over the 85 to 110 GHz band. Input bandwidth of the fullheight waveguide mixer (cap delta f _S/f _SO greater than 30%) is equal to 1/2-and close to 1/4-reduced-height waveguide mixers.     

340 GHz固定调谐分谐波混频器

基于最新研制的小阳极结反向并联肖特基二极管芯片,设计和制造了320~360 GHz固定调谐分谐波混频器。混频器的结构采用的是传统电场（E）面腔体剖分式结构:将二极管芯片倒装焊粘在石英基片上,再用导电银胶将石英电路悬置粘结在混频器下半个腔体上。电路设计采用场路相结合的方法:用场仿真软件建立混频电路各个功能单元的S参数模型,将它们代入非线性电路仿真软件中与二极管结相结合进行混频器性能整体仿真优化。最终测试结果表明,谐波混频器的双边带在4~6 mW的本振功率驱动下,在320~360 GHz超过12%带宽范围内,双边带变频损耗均小于9 dB;混频器在310~340 GHz频带范围内,双边带噪声温度最低为780 K。声温度最低为780 K。