共查询到20条相似文献,搜索用时 296 毫秒
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近年来,微晶硅(μc-Si:H)被认为是一种制作 TFT 的有前景的材料.采用PECVD法,在低于200℃时制作了微晶硅TFTs,其制作条件类似于非晶态 TFTs.微晶硅 TFTs 器件的迁移率超过了 30 cm2/Vs,而阈值电压是 2.5 V.在长沟道器件(50~200 μm)中观测到了这种高迁移率.但对于短沟道器件(2 μm),迁移率就降低到了7 cm2/Vs.此外,该 TFTs 的阈值电压随着沟道长度的减少而增大.文章采用了一种简单模型解释了迁移率、阈值电压随着沟道长度的缩短而分别减少、增加的原因在于源漏接触电阻的影响. 相似文献
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据报道,国外不少半导体厂家已掌握了硅栅N沟道工艺。这样,N沟道器件就有可能在大容量随机存取存储器方面取代P沟道器件,理由是N沟道器件具有优越的性能指标: 1.N-MOS存储器将比大多数P-MOS存储器的速度快1到2倍(N-MOS存储器的存取时间为100毫微秒或更短一些,而P-MOS的典型存取时间为200到300毫微 相似文献
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首先分别利用直流电学法、脉冲电学法和微区拉曼光谱法测量了晶格匹配InAlN/GaN高电子迁移率晶体管(HEMT)的沟道温度,然后评估了各类评估方法的准确性。结果表明:直流电学法获得的温度值远低于拉曼光谱法,严重低估了HEMT工作时的沟道温度;脉冲电学法获得的温度值有所提升,但受限于水平空间分辨率,平均了源极-漏极之间的温度;微区拉曼光谱法能够准确获得沟道最高温度,但测量过程复杂,不适合评估封装器件。最后,提出了一种基于微光显微镜(EMMI)技术的微光电学法,获得了沟道温度的三角分布关系,得到了与拉曼光谱法一致的实验结果。该评估方法适合于实际生产。 相似文献
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提出了一种基于微流控芯片由热光效应引起的微流体光波导结构。光波导芯层及覆层材料均为微通道中同种不同温度的液体。在微通道的上下面分别设计金属铜电极,在电极两端施加电压,对通道内液体加热。通过液体热传导,使得接近沟道壁边缘层与沟道中间层之间产生由高到低的温度分布。根据液体热光效应,液体在不同温度下折射率不同,沿着通道壁边缘层到通道中间层之间折射率由低到高,实现折射率渐变型平面光波导。电极两端所施加的电压大小及加热时间长短控制微沟道内温度高低,温度的高低决定了液体折射率分布,从而调节光波导实现单/多模传输。这种可调谐光波导结构可望在微流控光学器件中得到应用。 相似文献
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Geometric optimization of a micro heat sink with liquid flow 总被引:1,自引:0,他引:1
Over the course of the past decade, a number of investigations have been conducted to better understand the fluid flow and heat transfer in microchannel heat sinks, particularly as it pertains to applications involving the thermal control of electronic devices. In the current investigation, a detailed numerical simulation of the heat transfer occurring in silicon-based microchannel heat sinks has been conducted in order to optimize the geometric structure using a simplified, three-dimensional (3-D) conjugate heat transfer model [two-dimensional (2-D) fluid flow and 3-D heat transfer]. The micro heat sink modeled in this investigation consists of a 10 mm long silicon substrate with rectangular microchannels fabricated with different geometries. The rectangular microchannels had widths ranging from 20 /spl mu/m to 220 /spl mu/m and a depth ranging from 100 /spl mu/m to 400 /spl mu/m. The effect of the microchannel geometry on the temperature distribution in the microchannel heat sink is presented and discussed assuming a constant pumping power. The model was validated by comparing the predicted results with previously published experimental results and theoretical analyses, and indicated that both the physical geometry of the microchannel and the thermophysical properties of the substrate are important parameters in the design and optimization of these microchannel heat sinks. For the silicon-water micro heat sink, the optimal configuration for rectangular channel heat sinks occurred when the number of channels approached 120 channels per centimeter. 相似文献
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A novel valveless micropump with electrohydrodynamic enhancement for high heat flux cooling 总被引:3,自引:0,他引:3
Integrated microchannel cooling systems, with micropumps integrated into microchannels, are an attractive alternative to stand-alone micropumps for liquid-cooled microchannel heat sinks. A new micropump design capable of integration into microchannels and especially suited for electronics cooling is presented. It combines induction electrohydrodynamics (EHD) with a valveless nozzle-diffuser micropump actuated using a vibrating diaphragm. A comprehensive numerical model of the micropump has been developed to study the combined effect of EHD and valveless micropumping. The numerical model has been validated using theoretical and experimental results from the literature. The flow rate achievable from the new micropump is presented and the effect of several key parameters on the micropump performance investigated. 相似文献
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在对电子芯片内部冷却用的微管道散热器进行传热性能分析时,现有分析方法大都仅能在假设微管道下壁上的热载荷处于均匀分布时适用.当微管道下壁上的热载荷处于任意分布情况时,利用文中设计的有限元分析法可对微管道散热器的传热性能进行分析.在微管道下壁上的热载荷处于不同的分布情况下,利用伽辽金有限元公式计算了微管道散热器中的微管道表面温度分布、流体温度分布及散热器总热阻等;通过与现有的分析方法所得结果进行对比:在对热载荷均匀分布状态下的微管道散热器进行传热性能分析时,有限元方法完全可作为CFD(Calculated Fluid Dynamics)法的一种替代,且使用有限元方法对微管道散热器进行传热分析时的运算更为快捷.当微管道下壁上的热载荷处于任意非均匀分布状态时,利用文中设计的有限元分析法仍可有效地对微管道散热器的传热性能进行分析;因此有限元分析法也可用于研究微管道散热器的几何参数对散热器传热性能的影响. 相似文献
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A model of the electron dynamics inside a microchannel plate (MCP) in the presence of magnetic fields is presented and compared with experimental results. Image shift calculations agree with measurements to within 6% (B=0.06 T), and a model of channel open area against field is provided which closely matches gain rolloff for fields larger than 0.025 T.<> 相似文献
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随着微通道板的不断发展与完善,通过改善传统工艺提升其性能越来越困难,开发提升微通道板性能的新技术迫在眉睫。纳米薄膜材料的发展及其制备技术的成熟为微通道板的发展提供了契机,利用原子层沉积技术在通道内壁沉积一层氧化铝纳米薄膜,作为二次电子发射功能层,可以增强通道内壁的二次电子发射能力,从而提升微通道板的增益性能。通过优化原子层沉积工艺参数可以在微通道板的通道内壁沉积厚度均匀的氧化铝薄膜。研究结果表明,微通道板增益随沉积氧化铝厚度的变化而变化,在氧化铝厚度为60 cycles时,施加偏压800 V时增益可达56 000,约为正常微通道板增益的12倍。 相似文献
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为评估像增强器对强光的响应特性,开展了连续激光对像增强器的辐照实验,分析了激光辐照对其增益特性的影响。实验结果表明:持续增加激光功率,直到光阴极处激光功率密度达到点饱和阈值激光功率密度的8104倍时,仍未出现像元串扰现象,表明像增强器出现了增益饱和,其输出光强受限。建立了像增强器的微通道板等效电路模型,分析了微通道板的增益特性,得到微通道板线性增益允许的最大入射电流约为1.6410-10 A。该结果非常接近实验测量值,表明通道损失的电子得不到及时补充是增益饱和的主要原因。 相似文献
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An analytical solution is presented for the electric field between two facing strip electrodes situated in a microchannel, as frequently used in impedance cytometry applications. The measured change in resistance as induced by a 5 /spl mu/m bead moving through the microchannel is in good agreement with the model. It is also demonstrated that the centre sensitivity is maximal for an electrode width equal to /spl sim/56% of the channel height. 相似文献