Mechanical and tribological behaviours of aluminium matrix composites reinforced by graphene nanoplatelets

In the present study, the effects of graphene content (0.1, 0.3, 0.5?wt-%) on the mechanical and tribological properties of aluminium matrix composites were reported. The experimental results reveal that the best apparent density (2.58?±?0.02?g?cm^?3), highest Vickers hardness (57?±?2.5?HV), lowest mass loss (1.6 and 9.7?mg for 10?N and 40?N), and lowest wear rate (12?×?10^?5 and 18?×?10^?5?mm³/Nm for 10?N and 40?N) were obtained at aluminium–0.1% graphene composite when compared with pure aluminium. The ultimate compressive strength of composites increases from 106?±?4 to 138?±?4?MPa with increasing graphene nanoplatelet contents. All results showed that graphene has been a very effective reinforcement and solid-lubricant material for Al matrix composites.     

Strong,Conductive, Foldable Graphene Sheets by Sequential Ionic and π Bridging

The goal of this work is to develop an inexpensive low‐temperature process that provides polymer‐free, high‐strength, high‐toughness, electrically conducting sheets of reduced graphene oxide (rGO). To develop this process, we have evaluated the mechanical and electrical properties resulting from the application of an ionic bonding agent (Cr³⁺), a π–π bonding agent comprising pyrene end groups, and their combinations for enhancing the performance of rGO sheets. When only one bonding agent was used, the π–π bonding agent is much more effective than the ionic bonding agent for improving both the mechanical and electrical properties of rGO sheets. However, the successive application of ionic bonding and π–π bonding agents maximizes tensile strength, toughness, long‐term electrical stability in various corrosive solutions, and resistance to mechanical abuse and ultrasonic dissolution. Using a combination of ionic bonding and π–π bonding agents, high tensile strength (821 MPa), high toughness (20 MJ m^?3), and electrical conductivity (416 S cm^?1) were obtained, as well as remarkable retention of mechanical and electrical properties during ultrasonication and mechanical cycling by both sheet stretch and sheet folding, suggesting high potential for applications in aerospace and flexible electronics.     

Ultrastiff,Strong, and Highly Thermally Conductive Crystalline Graphitic Films with Mixed Stacking Order

A macroscopic film (2.5 cm × 2.5 cm) made by layer‐by‐layer assembly of 100 single‐layer polycrystalline graphene films is reported. The graphene layers are transferred and stacked one by one using a wet process that leads to layer defects and interstitial contamination. Heat‐treatment of the sample up to 2800 °C results in the removal of interstitial contaminants and the healing of graphene layer defects. The resulting stacked graphene sample is a freestanding film with near‐perfect in‐plane crystallinity but a mixed stacking order through the thickness, which separates it from all existing carbon materials. Macroscale tensile tests yields maximum values of 62 GPa for the Young's modulus and 0.70 GPa for the fracture strength, significantly higher than has been reported for any other macroscale carbon films; microscale tensile tests yield maximum values of 290 GPa for the Young's modulus and 5.8 GPa for the fracture strength. The measured in‐plane thermal conductivity is exceptionally high, 2292 ± 159 W m^?1 K^?1 while in‐plane electrical conductivity is 2.2 × 10⁵ S m^?1. The high performance of these films is attributed to the combination of the high in‐plane crystalline order and unique stacking configuration through the thickness.     

Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes

A highly flexible and transparent transistor is developed based on an exfoliated MoS₂ channel and CVD‐grown graphene source/drain electrodes. Introducing the 2D nanomaterials provides a high mechanical flexibility, optical transmittance (～74%), and current on/off ratio (>10⁴) with an average field effect mobility of ～4.7 cm² V^?1 s^?1, all of which cannot be achieved by other transistors consisting of a MoS₂ active channel/metal electrodes or graphene channel/graphene electrodes. In particular, a low Schottky barrier (～22 meV) forms at the MoS₂/graphene interface, which is comparable to the MoS₂/metal interface. The high stability in electronic performance of the devices upon bending up to ±2.2 mm in compressive and tensile modes, and the ability to recover electrical properties after degradation upon annealing, reveal the efficacy of using 2D materials for creating highly flexible and transparent devices.     

Flexible,Transparent, Conducting Films of Randomly Stacked Graphene from Surfactant‐Stabilized,Oxide‐Free Graphene Dispersions

Graphite is exfoliated in water to give dispersions of mono‐ and few‐layer graphene stabilized by surfactant. These dispersions can be used to form thin, disordered films of randomly stacked, oxide‐free, few‐layer graphenes. These films are transparent with a direct current conductivity of up to 1.5 × 10⁴ S m^?1. The conductivity is stable under flexing for at least 2000 cycles. The electrical properties are limited by disorder and aggregation suggesting future routes for improvement.     

Stretchable All‐Gel‐State Fiber‐Shaped Supercapacitors Enabled by Macromolecularly Interconnected 3D Graphene/Nanostructured Conductive Polymer Hydrogels

Nanostructured conductive polymer hydrogels (CPHs) have been extensively applied in energy storage owing to their advantageous features, such as excellent electrochemical activity and relatively high electrical conductivity, yet the fabrication of self‐standing and flexible electrode‐based CPHs is still hampered by their limited mechanical properties. Herein, macromolecularly interconnected 3D graphene/nanostructured CPH is synthesized via self‐assembly of CPHs and graphene oxide macrostructures. The 3D hybrid hydrogel shows uniform interconnectivity and enhanced mechanical properties due to the strong macromolecular interaction between the CPHs and graphene, thus greatly reducing aggregation in the fiber‐shaping process. A proof‐of‐concept all‐gel‐state fibrous supercapacitor based on the 3D polyaniline/graphene hydrogel is fabricated to demonstrate the outstanding flexibility and mouldability, as well as superior electrochemical properties enabled by this 3D hybrid hydrogel design. The proposed device can achieve a large strain (up to ≈40%), and deliver a remarkable volumetric energy density of 8.80 mWh cm^?3 (at power density of 30.77 mW cm^?3), outperforming many fiber‐shaped supercapacitors reported previously. The all‐hydrogel design opens up opportunities in the fabrication of next‐generation wearable and portable electronics.     

Low‐Temperature Heteroepitaxy of 2D PbI2/Graphene for Large‐Area Flexible Photodetectors

Heterostructures based on graphene and other 2D atomic crystals exhibit fascinating properties and intriguing potential in flexible optoelectronics, where graphene films function as transparent electrodes and other building blocks are used as photoactive materials. However, large‐scale production of such heterostructures with superior performance is still in early stages. Herein, for the first time, the preparation of a submeter‐sized, vertically stacked heterojunction of lead iodide (PbI₂)/graphene on a flexible polyethylene terephthalate (PET) film by vapor deposition of PbI₂ on graphene/PET substrate at a temperature lower than 200 °C is demonstrated. This film is subsequently used to fabricate bendable graphene/PbI₂/graphene sandwiched photodetectors, which exhibit high responsivity (45 A W^?1 cm^?2), fast response (35 µs rise, 20 µs decay), and high‐resolution imaging capability (1 µm). This study may pave a facile pathway for scalable production of high‐performance flexible devices.     

Oriented Arrangement: The Origin of Versatility for Porous Graphene Materials

Macroscopic porous graphene materials composed of graphene sheets have demonstrated their advantageous aspects in diverse application areas. It is essential to maximize their excellent performances by rationally controlling the sheet arrangement and pore structure. Bulk porous graphene materials with oriented pore structure and arrangement of graphene sheets are prepared by marrying electrolyte‐assisted self‐assembly and shear‐force‐induced alignment of graphene oxide sheets, and the super elasticity and anisotropic mechanical, electrical, and thermal properties induced by this unique structure are systematically investigated. Its application in pressure sensing exhibits ultrahigh sensitivity of 313.23 kPa^?1 for detecting ultralow pressure variation below 0.5 kPa, and it shows high retention rate for continuously intercepting dye molecules with a high flux of ≈18.7 L m^?2 h^?1 bar^?1 and a dynamic removal rate of 510 mg m^?2 h^?1.     

Flexible Foil of Hybrid TaS2/Organic Superlattice: Fabrication and Electrical Properties

TaS₂ nanolayers with reduced dimensionality show interesting physics, such as a gate‐tunable phase transition and enhanced superconductivity, among others. Here, a solution‐based strategy to fabricate a large‐area foil of hybrid TaS₂/organic superlattice, where [TaS₂] monolayers and organic molecules alternatively stack in atomic scale, is proposed. The [TaS₂] layers are spatially isolated with remarkably weakened interlayer bonding, resulting in lattice vibration close to that of TaS₂ monolayers. The foil also shows excellent mechanical flexibility together with a large electrical conductivity of 1.2 × 10³ S cm^?1 and an electromagnetic interference of 31 dB, among the highest values for solution‐processed thin films of graphene and inorganic graphene analogs. The solution‐based strategy reported herein can add a new dimension to manipulate the structure and properties of 2D materials and provide new opportunities for flexible nanoelectronic devices.     

Optimisation of hybridisation effect in graphene reinforced polymer nanocomposites

This article focuses on the optimisation of electrical and mechanical properties of hybrid blends of polyoxymethylene (POM) as primary thermoplastic matrix, polypyrrole (PPY) as secondary conducting polymer and graphene (G) as reinforcement. An initial Taguchi analysis was performed with a focus on improving electrical conductivity (σ) and tensile strength. A mixture analysis using ‘simplex’ statistical design was applied to develop an experimental subset that identified an optimal combination in weight-percentage. Both electrical and mechanical properties were improved by the addition of PPY and graphene particles due to hybridisation mechanism as well as double percolation threshold. The maximum electrical conductivity of 0.95 S cm^?1 was achieved with POM reinforced with 3 wt.% of G and 2.5 wt.% of PPY loading. The mechanical properties were found to be increased with increase in addition of both G and PPY.     

Conductive,self-cleaning,and short-circuit proof multi-functional graphene aerogel composite fibers

This work reports the superior properties of flexible multi-functional composite fibers based on graphene aerogel fibers. With the addition of phase change materials, the graphene aerogel fibers were synthesized by wet spinning and supercritical drying. The phase change materials can improve the structural uniformity and thermal stability of the composite fibers. The fibers coated with polydimethylsiloxane and fluorocarbon can respond to various external stimuli (e.g., electrons, photons, and heat), as well as have excellent properties of shape compliance, self-cleaning, and insulated surfaces. After coating fluorocarbon, the maximum water contact angle of graphene aerogel fibers increases from 132.18° to 151.77°. It is worth mentioning that adding an insulation layer of polydimethylsiloxane avoids the high-temperature problem caused by the short circuit of graphene aerogel fibers. The short-circuit temperature of graphene aerogel fibers is as high as 65 °C, while that of the composite fiber is only 41.5 °C after coating with polydimethylsiloxane. The temperature of graphene aerogel fibers with polyethylene glycol can increase to 39.3 °C under simulated sunlight. In addition, graphene aerogel fibers have excellent electrical conductivity (4.85?×?10³ S m^?1) at 300 K. After coating with polyethylene glycol, its electrical conductivity is still as high as 2.95?×?10³ S m^?1. The good electrical conductivity makes the aerogel fibers have promising application in advanced wearable systems.

     

N‐Doped Graphene Field‐Effect Transistors with Enhanced Electron Mobility and Air‐Stability

Although graphene can be easily p‐doped by various adsorbates, developing stable n‐doped graphene that is very useful for practical device applications is a difficult challenge. We investigated the doping effect of solution‐processed (4‐(1,3‐dimethyl‐2,3‐dihydro‐1H‐benzoimidazol‐2‐yl)phenyl)dimethylamine (N‐DMBI) on chemical‐vapor‐deposited (CVD) graphene. Strong n‐type doping is confirmed by Raman spectroscopy and the electrical transport characteristics of graphene field‐effect transistors. The strong n‐type doping effect shifts the Dirac point to around ‐140 V. Appropriate annealing at a low temperature of 80 ºC enables an enhanced electron mobility of 1150 cm² V^?1 s^?1. The work function and its uniformity on a large scale (1.2 mm × 1.2 mm) of the doped surface are evaluated using ultraviolet photoelectron spectroscopy and Kelvin probe mapping. Stable electrical properties are observed in a device aged in air for more than one month.     

Few‐Layer GeAs Field‐Effect Transistors and Infrared Photodetectors

The family of 2D semiconductors (2DSCs) has grown rapidly since the first isolation of graphene. The emergence of each 2DSC material brings considerable excitement for its unique electrical, optical, and mechanical properties, which are often highly distinct from their 3D counterparts. To date, studies of 2DSC are majorly focused on group IV (e.g., graphene, silicene), group V (e.g., phosphorene), or group VIB compounds (transition metal dichalcogenides, TMD), and have inspired considerable effort in searching for novel 2DSCs. Here, the first electrical characterization of group IV–V compounds is presented by investigating few‐layer GeAs field‐effect transistors. With back‐gate device geometry, p‐type behaviors are observed at room temperature. Importantly, the hole carrier mobility is found to approach 100 cm² V^?1 s^?1 with ON–OFF ratio over 10⁵, comparable well with state‐of‐the‐art TMD devices. With the unique crystal structure the few‐layer GeAs show highly anisotropic optical and electronic properties (anisotropic mobility ratio of 4.8). Furthermore, GeAs based transistor shows prominent and rapid photoresponse to 1.6 µm radiation with a photoresponsivity of 6 A W^?1 and a rise and fall time of ≈3 ms. This study of group IV–V 2DSC materials greatly expands the 2D family, and can enable new opportunities in functional electronics and optoelectronics based on 2DSCs.     

Vertical ZnO Nanotube Transistor on a Graphene Film for Flexible Inorganic Electronics

The bottom‐up integration of a 1D–2D hybrid semiconductor nanostructure into a vertical field‐effect transistor (VFET) for use in flexible inorganic electronics is reported. Zinc oxide (ZnO) nanotubes on graphene film is used as an example. The VFET is fabricated by growing position‐ and dimension‐controlled single crystal ZnO nanotubes vertically on a large graphene film. The graphene film, which acts as the substrate, provides a bottom electrical contact to the nanotubes. Due to the high quality of the single crystal ZnO nanotubes and the unique 1D device structure, the fabricated VFET exhibits excellent electrical characteristics. For example, it has a small subthreshold swing of 110 mV dec^?1, a high I_max/I_min ratio of 10⁶, and a transconductance of 170 nS µm^?1. The electrical characteristics of the nanotube VFETs are validated using 3D transport simulations. Furthermore, the nanotube VFETs fabricated on graphene films can be easily transferred onto flexible plastic substrates. The resulting components are reliable, exhibit high performance, and do not degrade significantly during testing.     

Ultrahigh Conductive Copper/Large Flake Size Graphene Heterostructure Thin‐Film with Remarkable Electromagnetic Interference Shielding Effectiveness

To guarantee the normal operation of next generation portable electronics and wearable devices, together with avoiding electromagnetic wave pollution, it is urgent to find a material possessing flexibility, ultrahigh conductive, and superb electromagnetic interference shielding effectiveness (EMI SE) simultaneously. In this work, inspired by a building bricks toy with the interlock system, we design and fabricate a copper/large flake size graphene (Cu/LG) composite thin film (≈8.8 μm) in the light of high temperature annealing of a large flake size graphene oxide film followed by magnetron sputtering of copper. The obtained Cu/LG thin‐film shows ultrahigh thermal conductivity of over 1932.73 (±63.07) W m^?1 K^?1 and excellent electrical conductivity of 5.88 (±0.29) × 10⁶ S m^?1. Significantly, it also exhibits a remarkably high EMI SE of over 52 dB at the frequency of 1–18 GHz. The largest EMI SE value of 63.29 dB, accorded at 1 GHz, is enough to obstruct and absorb 99.99995% of incident radiation. To the best of knowledge, this is the highest EMI SE performance reported so far in such thin thickness of graphene‐based materials. These outstanding properties make Cu/LG film a promising alternative building block for power electronics, microprocessors, and flexible electronics.     

A Force‐Engineered Lint Roller for Superclean Graphene

Contamination is a major concern in surface and interface technologies. Given that graphene is a 2D monolayer material with an extremely large surface area, surface contamination may seriously degrade its intrinsic properties and strongly hinder its applicability in surface and interfacial regions. However, large‐scale and facile treatment methods for producing clean graphene films that preserve its excellent properties have not yet been achieved. Herein, an efficient postgrowth treatment method for selectively removing surface contamination to achieve a large‐area superclean graphene surface is reported. The as‐obtained superclean graphene, with surface cleanness exceeding 99%, can be transferred to dielectric substrates with significantly reduced polymer residues, yielding ultrahigh carrier mobility of 500 000 cm² V^?1 s^?1 and low contact resistance of 118 Ω µm. The successful removal of contamination is enabled by the strong adhesive force of the activated‐carbon‐based lint roller on graphene contaminants.     

Charge Transfer at Junctions of a Single Layer of Graphene and a Metallic Single Walled Carbon Nanotube

Junctions between a single walled carbon nanotube (SWNT) and a monolayer of graphene are fabricated and studied for the first time. A single layer graphene (SLG) sheet grown by chemical vapor deposition (CVD) is transferred onto a SiO₂/Si wafer with aligned CVD‐grown SWNTs. Raman spectroscopy is used to identify metallic‐SWNT/SLG junctions, and a method for spectroscopic deconvolution of the overlapping G peaks of the SWNT and the SLG is reported, making use of the polarization dependence of the SWNT. A comparison of the Raman peak positions and intensities of the individual SWNT and graphene to those of the SWNT‐graphene junction indicates an electron transfer of 1.12 × 10¹³ cm^?2 from the SWNT to the graphene. This direction of charge transfer is in agreement with the work functions of the SWNT and graphene. The compression of the SWNT by the graphene increases the broadening of the radial breathing mode (RBM) peak from 3.6 ± 0.3 to 4.6 ± 0.5 cm^?1 and of the G peak from 13 ± 1 to 18 ± 1 cm^?1, in reasonable agreement with molecular dynamics simulations. However, the RBM and G peak position shifts are primarily due to charge transfer with minimal contributions from strain. With this method, the ability to dope graphene with nanometer resolution is demonstrated.     

Structural design of Cr/GLC films for high tribological performance in artificial seawater: Cr/GLC ratio and multilayer structure

In this paper,graphite-like carbon(GLC)films with Cr buffer layer were fabricated by DC magnetron sputtering technique with the thickness ratio of Cr to GLC films varying from 1:2 to 1:20.The effect of Cr/GLC modulation ratio on microstructure,mechanical and tribological properties in artificial seawater was mainly investigated by scanning electron microscopy(SEM),energy dispersive spectroscopy(EDS),nano-indenter and a reciprocating sliding tribo-meter.The propagation of defects plays an important role in the evolution of delamination,which is critical to wear failure of GLC films in artificial seawater.Designing the proper multilayer structure could inhibit the defects propagation and thus protect the basis material.The multilayer Cr/GLC film with optimized ratio of 1:3 demonstrates a low average friction coefficient of 0.08±0.006 and wear rate of(2.3±0.3)×10~(-8)mm~3/(N m)in artificial seawater,respectively.     

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistors

2D transition metal dichalcogenides (TMDCs) have emerged as promising candidates for post‐silicon nanoelectronics owing to their unique and outstanding semiconducting properties. However, contact engineering for these materials to create high‐performance devices while adapting for large‐area fabrication is still in its nascent stages. In this study, graphene/Ag contacts are introduced into MoS₂ devices, for which a graphene film synthesized by chemical vapor deposition (CVD) is inserted between a CVD‐grown MoS₂ film and a Ag electrode as an interfacial layer. The MoS₂ field‐effect transistors with graphene/Ag contacts show improved electrical and photoelectrical properties, achieving a field‐effect mobility of 35 cm² V^?1 s^?1, an on/off current ratio of 4 × 10⁸, and a photoresponsivity of 2160 A W^?1, compared to those of devices with conventional Ti/Au contacts. These improvements are attributed to the low work function of Ag and the tunability of graphene Fermi level; the n‐doping of Ag in graphene decreases its Fermi level, thereby reducing the Schottky barrier height and contact resistance between the MoS₂ and electrodes. This demonstration of contact interface engineering with CVD‐grown MoS₂ and graphene is a key step toward the practical application of atomically thin TMDC‐based devices with low‐resistance contacts for high‐performance large‐area electronics and optoelectronics.     

A Bioinspired Interface Design for Improving the Strength and Electrical Conductivity of Graphene‐Based Fibers

Graphene‐based fibers (GBFs) are attractive for next‐generation wearable electronics due to their potentially high mechanical strength, superior flexibility, and excellent electrical and thermal conductivity. Many efforts have been devoted to improving these properties of GBFs in the past few years. However, fabricating GBFs with high strength and electrical conductivity simultaneously remains as a great challenge. Herein, inspired by nacre‐like multilevel structural design, an interface‐reinforced method is developed to improve both the mechanical property and electrical conductivity of the GBFs by introducing polydopamine‐derived N‐doped carbon species as resistance enhancers, binding agents, and conductive connection “bridges.” Remarkably, both the tensile strength and electrical conductivity of the obtained GBFs are significantly improved to ≈724 MPa and ≈6.6 × 10⁴ S m^?1, respectively, demonstrating great superiority compared to previously reported similar GBFs. These outstanding integrated performances of the GBFs provide it with great application potential in the fields of flexible and wearable microdevices such as sensors, actuators, supercapacitors, and batteries.