Atomic‐Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications

Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large‐scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS_{2(1?x )}Se_2x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic‐level substitution combined with a solution‐based large‐area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS_1.62Se_0.38, MoS_1.37Se_0.63, MoS_1.15Se_0.85, and MoS_0.46Se_1.54 alloys, as well as MoS₂ and MoSe₂. Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large‐scale 2D TMD alloys are implemented. Se‐stimulated strain effects and a detailed mechanism for the Se substitution in the MoS₂ crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure‐phase MoS₂ and MoSe₂, are unambiguously achieved.     

Charge‐Accumulation Effect in Transition Metal Dichalcogenide Heterobilayers

Charge transfer in transition‐metal‐dichalcogenides (TMDs) heterostructures is a prerequisite for the formation of interlayer excitons, which hold great promise for optoelectronics and valleytronics. Charge accumulation accompanied by a charge‐transfer process can introduce considerable effect on interlayer exciton‐based applications; nevertheless, this aspect has been rarely studied up to date. This work demonstrates how the charge accumulation affects the light emission of interlayer excitons in van der Waals heterobilayers (HBs) consisting of monolayer WSe₂ and WS₂. As excitation power increases, the photoluminescence intensity of interlayer excitons increases more rapidly than that of intralayer excitons. The phenomenon can be explained by charge‐accumulation effect, which not only increases the recombination probability of interlayer excitons but also saturates the charge‐transfer process. This scenario is further confirmed by a careful examination of trion binding energy of WS₂, which nonlinearly increases with the increase of the excitation power before reaching a maximum of about 75 meV. These investigations provide a better understanding of interlayer excitons and trions in HBs, which may provoke further explorations of excitonic physics as well as TMDs‐based devices.     

Preparation of High‐Percentage 1T‐Phase Transition Metal Dichalcogenide Nanodots for Electrochemical Hydrogen Evolution

Nanostructured transition metal dichalcogenides (TMDs) are proven to be efficient and robust earth‐abundant electrocatalysts to potentially replace precious platinum‐based catalysts for the hydrogen evolution reaction (HER). However, the catalytic efficiency of reported TMD catalysts is still limited by their low‐density active sites, low conductivity, and/or uncleaned surface. Herein, a general and facile method is reported for high‐yield, large‐scale production of water‐dispersed, ultrasmall‐sized, high‐percentage 1T‐phase, single‐layer TMD nanodots with high‐density active edge sites and clean surface, including MoS₂, WS₂, MoSe₂, Mo_0.5W_0.5S₂, and MoSSe, which exhibit much enhanced electrochemical HER performances as compared to their corresponding nanosheets. Impressively, the obtained MoSSe nanodots achieve a low overpotential of ?140 mV at current density of 10 mA cm^?2, a Tafel slope of 40 mV dec^?1, and excellent long‐term durability. The experimental and theoretical results suggest that the excellent catalytic activity of MoSSe nanodots is attributed to the high‐density active edge sites, high‐percentage metallic 1T phase, alloying effect and basal‐plane Se‐vacancy. This work provides a universal and effective way toward the synthesis of TMD nanostructures with abundant active sites for electrocatalysis, which can also be used for other applications such as batteries, sensors, and bioimaging.     

Light‐Emitting Transition Metal Dichalcogenide Monolayers under Cellular Digestion

2D materials cover a wide spectrum of electronic properties. Their applications are extended from electronic, optical, and chemical to biological. In terms of biomedical uses of 2D materials, the interactions between living cells and 2D materials are of paramount importance. However, biointerfacial studies are still in their infancy. This work studies how living organisms interact with transition metal dichalcogenide monolayers. For the first time, cellular digestion of tungsten disulfide (WS₂) monolayers is observed. After digestion, cells intake WS₂ and become fluorescent. In addition, these light‐emitting cells are not only viable, but also able to pass fluorescent signals to their progeny cells after cell division. By combining synthesis of 2D materials and a cell culturing technique, a procedure for monitoring the interactions between WS₂ monolayers and cells is developed. These observations open up new avenues for developing novel cellular labeling and imaging approaches, thus triggering further studies on interactions between 2D materials and living organisms.     

Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution‐Phase Deposition

2D metal chalcogenide thin films have recently attracted considerable attention owing to their unique physicochemical properties and great potential in a variety of applications. Synthesis of large‐area 2D metal chalcogenide thin films in controllable ways remains a key challenge in this research field. Recently, the solution‐based synthesis of 2D metal chalcogenide thin films has emerged as an alternative approach to vacuum‐based synthesis because it is relatively simple and easy to scale up for high‐throughput production. In addition, solution‐based thin films open new opportunities that cannot be achieved from vacuum‐based thin films. Here, a comprehensive summary regarding the basic structures and properties of different types of 2D metal chalcogenides, the mechanistic details of the chemical reactions in the synthesis of the metal chalcogenide thin films, recent successes in the synthesis by different reaction approaches, and the applications and potential uses is provided. In the last perspective section, the technical challenges to be overcome and the future research directions in the solution‐based synthesis of 2D metal chalcogenides are discussed.     

Size‐Dependent Nonlinear Optical Properties of Atomically Thin Transition Metal Dichalcogenide Nanosheets

Size‐dependent nonlinear optical properties of modification‐free transition metal dichalcogenide (TMD) nanosheets are reported, including MoS₂, WS₂, and NbSe₂. Firstly, a gradient centrifugation method is demonstrated to separate the TMD nanosheets into different sizes. The successful size separation allows the study of size‐dependent nonlinear optical properties of nanoscale TMD materials for the first time. Z‐scan measurements indicate that the dispersion of MoS₂ and WS₂ nanosheets that are 50–60 nm thick leads to reverse saturable absorption (RSA), which is in contrast to the saturable absorption (SA) seen in the thicker samples. Moreover, the NbSe₂ nanosheets show no size‐dependent effects because of their metallic nature. The mechanism behind the size‐dependent nonlinear optical properties of the semiconductive TMD nanosheets is revealed by transient transmission spectra measurements.     

Homoepitaxial Growth of Large‐Scale Highly Organized Transition Metal Dichalcogenide Patterns

Controllable growth of highly crystalline transition metal dichalcogenide (TMD) patterns with regular morphology and unique edge structure is highly desired and important for fundamental research and potential applications. Here, single‐crystalline MoS₂ flakes are reported with regular trigonal symmetric patterns that can be homoepitaxially grown on MoS₂ monolayer via chemical vapor deposition. The highly organized MoS₂ patterns are rhombohedral (3R)‐stacked with the underlying MoS₂ monolayer, and their boundaries are predominantly terminated by zigzag Mo edge structure. The epitaxial MoS₂ crystals can be tailored from compact triangles to fractal flakes, and the pattern formation can be explained by the anisotropic growth rates of the S and Mo edges under low sulfur chemical potential. The 3R‐stacked MoS₂ pattern demonstrates strong second and third‐harmonic‐generation signals, which exceed those reported for monolayer MoS₂ by a factor of 6 and 4, correspondingly. This homoepitaxial growth approach for making highly organized TMD patterns is also demonstrated for WS₂.     

Thermodynamically Stable Synthesis of Large‐Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n–n Heterojunction Devices

Transition metal dichalcogenide (TMDC) monolayers are considered to be potential materials for atomically thin electronics due to their unique electronic and optical properties. However, large‐area and uniform growth of TMDC monolayers with large grain sizes is still a considerable challenge. This report presents a simple but effective approach for large‐scale and highly crystalline molybdenum disulfide monolayers using a solution‐processed precursor deposition. The low supersaturation level, triggered by the evaporation of an extremely thin precursor layer, reduces the nucleation density dramatically under a thermodynamically stable environment, yielding uniform and clean monolayer films and large crystal sizes up to 500 µm. As a result, the photoluminescence exhibits only a small full‐width‐half‐maximum of 48 meV, comparable to that of exfoliated and suspended monolayer crystals. It is confirmed that this growth procedure can be extended to the synthesis of other TMDC monolayers, and robust MoS₂/WS₂ heterojunction devices are easily prepared using this synthetic procedure due to the large‐sized crystals. The heterojunction device shows a fast response time (≈45 ms) and a significantly high photoresponsivity (≈40 AW^?1) because of the built‐in potential and the majority‐carrier transport at the n–n junction. These findings indicate an efficient pathway for the fabrication of high‐performance 2D optoelectronic devices.     

In‐Plane Anisotropic Thermal Conductivity of Few‐Layered Transition Metal Dichalcogenide Td‐WTe2

2D Td‐WTe₂ has attracted increasing attention due to its promising applications in spintronic, field‐effect chiral, and high‐efficiency thermoelectric devices. It is known that thermal conductivity plays a crucial role in condensed matter devices, especially in 2D systems where phonons, electrons, and magnons are highly confined and coupled. This work reports the first experimental evidence of in‐plane anisotropic thermal conductivities in suspended Td‐WTe₂ samples of different thicknesses, and is also the first demonstration of such anisotropy in 2D transition metal dichalcogenides. The results reveal an obvious anisotropy in the thermal conductivities between the zigzag and armchair axes. The theoretical calculation implies that the in‐plane anisotropy is attributed to the different mean free paths along the two orientations. As thickness decreases, the phonon‐boundary scattering increases faster along the armchair direction, resulting in stronger anisotropy. The findings here are crucial for developing efficient thermal management schemes when engineering thermal‐related applications of a 2D system.     

High-Throughput Growth of Wafer-Scale Monolayer Transition Metal Dichalcogenide via Vertical Ostwald Ripening

For practical device applications, monolayer transition metal dichalcogenide (TMD) films must meet key industry needs for batch processing, including the high-throughput, large-scale production of high-quality, spatially uniform materials, and reliable integration into devices. Here, high-throughput growth, completed in 12 min, of 6-inch wafer-scale monolayer MoS₂ and WS₂ is reported, which is directly compatible with scalable batch processing and device integration. Specifically, a pulsed metal–organic chemical vapor deposition process is developed, where periodic interruption of the precursor supply drives vertical Ostwald ripening, which prevents secondary nucleation despite high precursor concentrations. The as-grown TMD films show excellent spatial homogeneity and well-stitched grain boundaries, enabling facile transfer to various target substrates without degradation. Using these films, batch fabrication of high-performance field-effect transistor (FET) arrays in wafer-scale is demonstrated, and the FETs show remarkable uniformity. The high-throughput production and wafer-scale automatable transfer will facilitate the integration of TMDs into Si-complementary metal-oxide-semiconductor platforms.