Wavelength‐Tunable Electroluminescent Light Sources from Individual Ga‐Doped ZnO Microwires

Electrically driven wavelength‐tunable light emission from biased individual Ga‐doped ZnO microwires (ZnO:Ga MWs) is demonstrated. Single crystalline ZnO:Ga MWs with different Ga‐doping concentrations have been synthesized using a one‐step chemical vapor deposition method. Strong electrically driven light emission from individual ZnO:Ga MW based devices is realized with tunable colors, and the emission region is localized toward the center of the wires. Increasing Ga‐doping concentration in the MWs can lead to the redshift of electroluminescent emissions in the visible range. Interestingly, owing to the lack of rectification characteristics, relevant electrical measurement results show that the alternating current‐driven light emission functions excellently on the ZnO:Ga MWs. Consequently, individual ZnO:Ga MWs, which can be analogous to incandescent sources, offer unique possibilities for future electroluminescence light sources. This typical multicolor emitter can be used to rival and complement other conventional semiconductor devices in displays and lighting.     

Stretchable Organometal‐Halide‐Perovskite Quantum‐Dot Light‐Emitting Diodes

Stretchable light‐emitting diodes (LEDs) and electroluminescent capacitors have been reported to potentially bring new opportunities to wearable electronics; however, these devices lack in efficiency and/or stretchability. Here, a stretchable organometal‐halide‐perovskite quantum‐dot LED with both high efficiency and mechanical compliancy is demonstrated. The hybrid device employs an ultrathin (<3 µm) LED structure conformed on a surface‐wrinkled elastomer substrate. Its luminescent efficiency is up to 9.2 cd A^?1, which is 70% higher than a control diode fabricated on the rigid indium tin oxide/glass substrate. Mechanical deformations up to 50% tensile strain do not induce significant loss of the electroluminescent property. The device can survive 1000 stretch–release cycles of 20% tensile strain with small fluctuations in electroluminescent performance.     

Recent Advances in Alternating Current‐Driven Organic Light‐Emitting Devices

Organic light‐emitting devices (OLEDs), typically operated with constant‐voltage or direct‐current (DC) power sources, are candidates for next‐generation solid‐state lighting and displays, as they are light, thin, inexpensive, and flexible. However, researchers have focused mainly on the device itself (e.g., development of novel materials, design of the device structure, and optical outcoupling engineering), and little attention has been paid to the driving mode. Recently, an alternative concept to DC‐driven OLEDs by directly driving devices using time‐dependent voltages or alternating current (AC) has been explored. Here, the effects of different device structures of AC‐driven OLEDs, for example, double‐insulation, single‐insulation, double‐injection, and tandem structure, on the device performance are systematically investigated. The formation of excitons and the dielectric layer, which are important to achieve high‐performance AC‐driven OLEDs, are carefully considered. The importance of gaining further understanding of the fundamental properties of AC‐driven OLEDs is then discussed, especially as they relate to device physics.     

Inkjet Printed Bilayer Light‐Emitting Electrochemical Cells for Display and Lighting Applications

A new bilayer light‐emitting electrochemical cell (LEC) device, which allows well‐defined patterned light emission through an easily adjustable, mask‐free, and additive fabrication process, is reported. The bilayer stack comprises an inkjet‐printed lattice of micrometer‐sized electrolyte droplets, in a “filled” or “patterned” lattice configuration. On top of this, a thin layer of light‐emitting compound is deposited from solution. The light emission is demonstrated to originate from regions proximate to the interfaces between the inkjetted electrolyte, the light‐emitting compound, and one electrode, where bipolar electron/hole injection and electrochemical doping are facilitated by ion motion. By employing KCF₃SO₃ in poly(ethylene glycol) as the electrolyte, Super Yellow as the light‐emitting compound, and two air‐stabile electrodes, it is possible to realize filled lattice devices that feature uniform yellow–green light emission to the naked eye, and patterned lattice devices that deliver well‐defined and high‐contrast static messages with a pixel density of 170 PPI.     

Organic Light‐Emitting Transistors: Materials,Device Configurations,and Operations

Organic light‐emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field‐effect transistors (OFETs) and the light‐generation capability of organic light‐emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state‐of‐the‐art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source‐drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs.     

Electrical Scanning Probe Microscopy on Active Organic Electronic Devices

Polymer‐ and small‐molecule‐based organic electronic devices are being developed for applications including electroluminescent displays, transistors, and solar cells due to the promise of low‐cost manufacturing. It has become clear that these materials exhibit nanoscale heterogeneities in their optical and electrical properties that affect device performance, and that this nanoscale structure varies as a function of film processing and device‐fabrication conditions. Thus, there is a need for high‐resolution measurements that directly correlate both electronic and optical properties with local film structure in organic semiconductor films. In this article, we highlight the use of electrical scanning probe microscopy techniques, such as conductive atomic force microscopy (c‐AFM), electrostatic force microscopy (EFM), scanning Kelvin probe microscopy (SKPM), and similar variants to elucidate charge injection/extraction, transport, trapping, and generation/recombination in organic devices. We discuss the use of these tools to probe device structures ranging from light‐emitting diodes (LEDs) and thin‐film transistors (TFT), to light‐emitting electrochemical cells (LECs) and organic photovoltaics.     

Highly Deformable and See‐Through Polymer Light‐Emitting Diodes with All‐Conducting‐Polymer Electrodes

Despite the high expectation of deformable and see‐through displays for future ubiquitous society, current light‐emitting diodes (LEDs) fail to meet the desired mechanical and optical properties, mainly because of the fragile transparent conducting oxides and opaque metal electrodes. Here, by introducing a highly conductive nanofibrillated conducting polymer (CP) as both deformable transparent anode and cathode, ultraflexible and see‐through polymer LEDs (PLEDs) are demonstrated. The CP‐based PLEDs exhibit outstanding dual‐side light‐outcoupling performance with a high optical transmittance of 75% at a wavelength of 550 nm and with an excellent mechanical durability of 9% bending strain. Moreover, the CP‐based PLEDs fabricated on 4 µm thick plastic foils with all‐solution processing have extremely deformable and foldable light‐emitting functionality. This approach is expected to open a new avenue for developing wearable and attachable transparent displays.     

Hybrid Copper‐Nanowire–Reduced‐Graphene‐Oxide Coatings: A “Green Solution” Toward Highly Transparent,Highly Conductive,and Flexible Electrodes for (Opto)Electronics

This study reports a novel green chemistry approach to assemble copper‐nanowires/reduced‐graphene‐oxide hybrid coatings onto inorganic and organic supports. Such films are robust and combine sheet resistances (<30 Ω sq^?1) and transparencies in the visible region (transmittance > 70%) that are rivalling those of indium–tin oxide. These electrodes are suitable for flexible electronic applications as they show a sheet resistance change of <4% after 10 000 bending cycles at a bending radius of 1.0 cm, when supported on polyethylene terephthalate foils. Significantly, the wet‐chemistry method involves the preparation of dispersions in environmentally friendly solvents and avoids the use of harmful reagents. Such inks are processed at room temperature on a wide variety of surfaces by spray coating. As a proof‐of‐concept, this study demonstrates the successful use of such coatings as electrodes in high‐performance electrochromic devices. The robustness of the electrodes is demonstrated by performing several tens of thousands of cycles of device operation. These unique conducting coatings hold potential for being exploited as transparent electrodes in numerous optoelectronic applications such as solar cells, light‐emitting diodes, and displays.     

Perovskite Materials for Light‐Emitting Diodes and Lasers

Organic–inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light‐emitting diodes, lasers, and light‐emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light‐emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A^?1 have been achieved. Although perovskite light‐emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light‐emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower‐dimensionality layered and three‐dimensional perovskites, nanostructures, charge‐transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light‐emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light‐emitting devices.     

Enhancing Light Emission in Interface Engineered Spin‐OLEDs through Spin‐Polarized Injection at High Voltages

The quest for a spin‐polarized organic light‐emitting diode (spin‐OLED) is a common goal in the emerging fields of molecular electronics and spintronics. In this device, two ferromagnetic (FM) electrodes are used to enhance the electroluminescence intensity of the OLED through a magnetic control of the spin polarization of the injected carriers. The major difficulty is that the driving voltage of an OLED device exceeds a few volts, while spin injection in organic materials is only efficient at low voltages. The fabrication of a spin‐OLED that uses a conjugated polymer as bipolar spin collector layer and ferromagnetic electrodes is reported here. Through a careful engineering of the organic/inorganic interfaces, it is succeeded in obtaining a light‐emitting device showing spin‐valve effects at high voltages (up to 14 V). This allows the detection of a magneto‐electroluminescence (MEL) enhancement on the order of a 2.4% at 9 V for the antiparallel (AP) configuration of the magnetic electrodes. This observation provides evidence for the long‐standing fundamental issue of injecting spins from magnetic electrodes into the frontier levels of a molecular semiconductor. The finding opens the way for the design of multifunctional devices coupling the light and the spin degrees of freedom.     

A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers

The light‐emitting device is the primary device for current light sources. In principle, conventional light‐emitting devices need heterostructures and/or intentional carrier doping to form a p–n junction. This junction formation is, however, very difficult to achieve for most emerging semiconductors, and the fabrication of light‐emitting devices is invariably a significant challenge. This study proposes a versatile and simple approach to realize light‐emitting devices. This proposed device requires only a semiconducting film with two electrodes that are covered with an electrolyte. This unique structure achieves light emission at a voltage slightly larger than the bandgap energy of materials. This study applies this concept to emerging direct bandgap semiconductors, such as transition metal dichalcogenide monolayers and zinc oxide single crystals. These devices generate obvious light emission and provide sufficient evidence of the formation of a dynamic p–i–n junction or tunneling junction, presenting a versatile technique to develop optoelectronic devices.     

Long‐Lived Flexible Displays Employing Efficient and Stable Inverted Organic Light‐Emitting Diodes

Although organic light‐emitting diodes (OLEDs) are promising for use in applications such as in flexible displays, reports of long‐lived flexible OLED‐based devices are limited due to the poor environmental stability of OLEDs. Flexible substrates such as plastic allow ambient oxygen and moisture to permeate into devices, which degrades the alkali metals used for the electron‐injection layer in conventional OLEDs (cOLEDs). Here, the fabrication of a long‐lived flexible display is reported using efficient and stable inverted OLEDs (iOLEDs), in which electrons can be effectively injected without the use of alkali metals. The flexible display employing iOLEDs can emit light for over 1 year with simplified encapsulation, whereas a flexible display employing cOLEDs exhibits almost no luminescence after only 21 d with the same encapsulation. These results demonstrate the great potential of iOLEDs to replace cOLEDs employing alkali metals for use in a wide variety of flexible organic optoelectronic devices.     

Junction‐Free Electrospun Ag Fiber Electrodes for Flexible Organic Light‐Emitting Diodes

Fabrication of junction‐free Ag fiber electrodes for flexible organic light‐emitting diodes (OLEDs) is demonstrated. The junction‐free Ag fiber electrodes are fabricated by electrospun polymer fibers used as an etch mask and wet etching of Ag thin film. This process facilitates surface roughness control, which is important in transparent electrodes based on metal wires to prevent electrical instability of the OLEDs. The transmittance and resistance of Ag fiber electrodes can be independently adjusted by controlling spinning time and Ag deposition thickness. The Ag fiber electrode shows a transmittance of 91.8% (at 550 nm) at a sheet resistance of 22.3 Ω □^?1, leading to the highest OLED efficiency. In addition, Ag fiber electrodes exhibit excellent mechanical durability, as shown by measuring the change in resistance under repeatable mechanical bending and various bending radii. The OLEDs with Ag fiber electrodes on a flexible substrate are successfully fabricated, and the OLEDs show an enhancement of EQE (≈19%) compared to commercial indium tin oxide electrodes.     

Textile Display for Electronic and Brain‐Interfaced Communications

Textile displays are poised to revolutionize current electronic devices, and reshape the future of electronics and related fields such as biomedicine and soft robotics. However, they remain unavailable due to the difficulty of directly constructing electroluminescent devices onto the textile‐like substrate to really display desired programmable patterns. Here, a novel textile display is developed from continuous electroluminescent fibers made by a one‐step extrusion process. The resulting displaying textile is flexible, stretchable, three‐dimensionally twistable, conformable to arbitrarily curved skins, and breathable, and can dynamically display a series of desired patterns, making it useful for bioinspired electronics, soft robotics, and electroluminescent skins, among other applications. It is demonstrated that these displaying textiles can also communicate with a computer and mouse brain for smart display and camouflage applications. This work may open up a new direction for the integration of wearable electroluminescent devices with the human body, providing new and promising communication platforms.     

High‐Efficiency Single‐Component Organic Light‐Emitting Transistors

Construction of high‐performance organic light‐emitting transistors (OLETs) remains challenging due to the limited desired organic semiconductor materials. Here, two superior high mobility emissive organic semiconductors, 2,6‐diphenylanthracene (DPA) and 2,6‐di(2‐naphthyl) anthracene (dNaAnt), are introduced into the construction of OLETs. By optimizing the device geometry for balanced ambipolar efficient charge transport and using high‐quality DPA and dNaAnt single crystals as active layers, high‐efficiency single‐component OLETs are successfully fabricated, with the demonstration of strong and spatially controlled light emission within both p‐ and n‐ conducting channels and output of high external quantum efficiency (EQE). The obtained EQE values in current devices are approaching 1.61% for DPA‐OLETs and 1.75% for dNaAnt‐based OLETs, respectively, which are the highest EQE values for single‐component OLETs in the common device configuration reported so far. Moreover, high brightnesses of 1210 and 3180 cd m^?2 with current densities up to 1.3 and 8.4 kA cm^?2 are also achieved for DPA‐ and dNaAnt‐based OLETs, respectively. These results demonstrate the great potential applications of high mobility emissive organic semiconductors for next‐generation rapid development of high‐performance single‐component OLETs and their related organic integrated electro‐optical devices.     

Flexible Blade‐Coated Multicolor Polymer Light‐Emitting Diodes for Optoelectronic Sensors

A method to print two materials of different functionality during the same printing step is presented. In printed electronics, devices are built layer by layer and conventionally only one type of material is deposited in one pass. Here, the challenges involving printing of two emissive materials to form polymer light‐emitting diodes (PLEDs) that emit light of different wavelengths without any significant changes in the device characteristics are described. The surface‐energy‐patterning technique is utilized to print materials in regions of interest. This technique proves beneficial in reducing the amount of ink used during blade coating and improving the reproducibility of printed films. A variety of colors (green, red, and near‐infrared) are demonstrated and characterized. This is the first known attempt to print multiple materials by blade coating. These devices are further used in conjunction with a commercially available photodiode to perform blood oxygenation measurements on the wrist, where common accessories are worn. Prior to actual application, the threshold conditions for each color are discussed, in order to acquire a stable and reproducible photoplethysmogram (PPG) signal. Finally, based on the conditions, PPG and oxygenation measurements are successfully performed on the wrist with green and red PLEDs.     

Efficient Solid‐State Photoluminescence of Graphene Quantum Dots Embedded in Boron Oxynitride for AC‐Electroluminescent Device

Emerging graphene quantum dots (GQDs) have received much attention for use as next‐generation light‐emitting diodes. However, in the solid‐state, π‐interaction‐induced aggregation‐caused photoluminescence (PL) quenching (ACQ) in GQDs makes it challenging to realize high‐performance devices. Herein, GQDs incorporated with boron oxynitride (GQD@BNO) are prepared from a mixture of GQDs, boric acid, and urea in water via one‐step microwave heating. Due to the effective dispersion in the BNO matrix, ACQ is significantly suppressed, resulting in high PL quantum yields (PL‐QYs) of up to 36.4%, eightfold higher than that of pristine GQD in water. The PL‐QY enhancement results from an increase in the spontaneous emission rate of GQDs due to the surrounding BNO matrix, which provides a high‐refractive‐index material and fluorescence energy transfer from the larger‐gap BNO donor to the smaller‐gap GQD acceptor. A high solid‐state PL‐QY makes the GQD@BNO an ideal active material for use in AC powder electroluminescent (ACPEL) devices, with the luminance of the first working GQD‐based ACPEL device exceeding 283 cd m^?2. This successful demonstration shows promise for the use of GQDs in the field of low‐cost, ecofriendly electroluminescent devices.     

Nanoparticle‐Enhanced Silver‐Nanowire Plasmonic Electrodes for High‐Performance Organic Optoelectronic Devices

Improved performance in plasmonic organic solar cells (OSCs) and organic light‐emitting diodes (OLEDs) via strong plasmon‐coupling effects generated by aligned silver nanowire (AgNW) transparent electrodes decorated with core–shell silver–silica nanoparticles (Ag@SiO₂NPs) is demonstrated. NP‐enhanced plasmonic AgNW (Ag@SiO₂NP–AgNW) electrodes enable substantially enhanced radiative emission and light absorption efficiency due to strong hybridized plasmon coupling between localized surface plasmons (LSPs) and propagating surface plasmon polaritons (SPPs) modes, which leads to improved device performance in organic optoelectronic devices (OODs). The discrete dipole approximation (DDA) calculation of the electric field verifies a strongly enhanced plasmon‐coupling effect caused by decorating core–shell Ag@SiO₂NPs onto the AgNWs. Notably, an electroluminescence efficiency of 25.33 cd A^?1 (at 3.2 V) and a power efficiency of 25.14 lm W^?1 (3.0 V) in OLEDs, as well as a power conversion efficiency (PCE) value of 9.19% in OSCs are achieved using hybrid Ag@SiO₂NP–AgNW films. These are the highest values reported to date for optoelectronic devices based on AgNW electrodes. This work provides a new design platform to fabricate high‐performance OODs, which can be further explored in various plasmonic and optoelectronic devices.     

Electron Transfer Mediated by Surface‐Tethered Redox Groups in Nanofluidic Devices

Electrochemistry provides a powerful sensor transduction and amplification mechanism that is highly suited for use in integrated, massively parallelized assays. Here, the cyclic voltammetric detection of flexible, linear poly(ethylene glycol) polymers is demonstrated, which have been functionalized with redox‐active ferrocene (Fc) moieties and surface‐tethered inside a nanofluidic device consisting of two microscale electrodes separated by a gap of <100 nm. Diffusion of the surface‐bound polymer chains in the aqueous electrolyte allows the redox groups to repeatedly shuttle electrons from one electrode to the other, resulting in a greatly amplified steady‐state electrical current. Variation of the polymer length provides control over the current, as the activity per Fc moiety appears to depend on the extent to which the polymer layers of the opposing electrodes can interpenetrate each other and thus exchange electrons. These results outline the design rules for sensing devices that are based on changing the polymer length, flexibility, and/or diffusivity by binding an analyte to the polymer chain. Such a nanofluidic enabled configuration provides an amplified and highly sensitive alternative to other electrochemical detection mechanisms.     

Designable Luminescence with Quantum Dot–Silver Plasmon Coupler

We explore a strongly interacting QDs/Ag plasmonic coupling structure that enables multiple approaches to manipulate light emission from QDs. Group II–VI semiconductor QDs with unique surface states (SSs) impressively modify the plasmonic character of the contiguous Ag nanostructures whereby the localized plasmons (LPs) in the Ag nanostructures can effectively extract the non‐radiative SSs of the QDs to radiatively emit via SS–LP resonance. The SS–LP coupling is demonstrated to be readily tunable through surface‐state engineering both during QD synthesis and in the post‐synthesis stage. The combination of surface‐state engineering and band‐tailoring engineering allows us to precisely control the luminescence color of the QDs and enables the realization of white‐light emission with single‐size QDs. Being a versatile metal, the Ag in our optical device functions in multiple ways: as a support for the LPs, for optical reflection, and for electrical conduction. Two application examples of the QDs/Ag plasmon coupler for optical devices are given, an Ag microcavity + plasmon‐coupling structure and a new QD light‐emitting diode. The new QDs/Ag plasmon coupler opens exciting possibilities in developing novel light sources and biomarker detectors.