Edge‐Epitaxial Growth of 2D NbS2‐WS2 Lateral Metal‐Semiconductor Heterostructures

2D metal‐semiconductor heterostructures based on transition metal dichalcogenides (TMDs) are considered as intriguing building blocks for various fields, such as contact engineering and high‐frequency devices. Although, a series of p–n junctions utilizing semiconducting TMDs have been constructed hitherto, the realization of such a scheme using 2D metallic analogs has not been reported. Here, the synthesis of uniform monolayer metallic NbS₂ on sapphire substrate with domain size reaching to a millimeter scale via a facile chemical vapor deposition (CVD) route is demonstrated. More importantly, the epitaxial growth of NbS₂‐WS₂ lateral metal‐semiconductor heterostructures via a “two‐step” CVD method is realized. Both the lateral and vertical NbS₂‐WS₂ heterostructures are achieved here. Transmission electron microscopy studies reveal a clear chemical modulation with distinct interfaces. Raman and photoluminescence maps confirm the precisely controlled spatial modulation of the as‐grown NbS₂‐WS₂ heterostructures. The existence of the NbS₂‐WS₂ heterostructures is further manifested by electrical transport measurements. This work broadens the horizon of the in situ synthesis of TMD‐based heterostructures and enlightens the possibility of applications based on 2D metal‐semiconductor heterostructures.     

Synthesis of In‐Plane Artificial Lattices of Monolayer Multijunctions

Recently, monolayers of van der Waals materials, including transition metal dichalcogenides (TMDs), are considered ideal building blocks for constructing 2D artificial lattices and heterostructures. Heterostructures with multijunctions of more than two monolayer TMDs are intriguing for exploring new physics and materials properties. Obtaining in‐plane heterojunctions of monolayer TMDs with atomically sharp interfaces is very significant for fundamental research and applications. Currently, multistep synthesis for more than two monolayer TMDs remains a challenge because decomposition or compositional alloying is thermodynamically favored at the high growth temperature. Here, a multistep chemical vapor deposition (CVD) synthesis of the in‐plane multijunctions of monolayer TMDs is presented. A low growth temperature synthesis is developed to avoid compositional fluctuations of as‐grown TMDs, defects formations, and interfacial alloying for high heterointerface quality and thermal stability of monolayer TMDs. With optimized parameters, atomically sharp interfaces are successfully achieved in the synthesis of in‐plane artificial lattices of the WS₂/WSe₂/MoS₂ at reduced growth temperatures. Growth behaviors as well as the heterointerface quality are carefully studied in varying growth parameters. Highly oriented strain patterns are found in the second harmonic generation imaging of the TMD multijunctions, suggesting that the in‐plane heteroepitaxial growth may induce distortion for unique material symmetry.     

Quantifying Quasi‐Fermi Level Splitting and Mapping its Heterogeneity in Atomically Thin Transition Metal Dichalcogenides

One of the most fundamental parameters of any photovoltaic material is its quasi‐Fermi level splitting (?µ) under illumination. This quantity represents the maximum open‐circuit voltage (V_oc) that a solar cell fabricated from that material can achieve. Herein, a contactless, nondestructive method to quantify this parameter for atomically thin 2D transition metal dichalcogenides (TMDs) is reported. The technique is applied to quantify the upper limits of V_oc that can possibly be achieved from monolayer WS₂, MoS₂, WSe₂, and MoSe₂‐based solar cells, and they are compared with state‐of‐the‐art perovskites. These results show that V_oc values of ≈1.4, ≈1.12, ≈1.06, and ≈0.93 V can be potentially achieved from solar cells fabricated from WS₂, MoS₂, WSe₂, and MoSe₂ monolayers at 1 Sun illumination, respectively. It is also observed that ?µ is inhomogeneous across different regions of these monolayers. Moreover, it is attempted to engineer the observed ?µ heterogeneity by electrically gating the TMD monolayers in a metal‐oxide‐semiconductor structure that effectively changes the doping level of the monolayers electrostatically and improves their ?µ heterogeneity. The values of ?µ determined from this work reveal the potential of atomically thin TMDs for high‐voltage, ultralight, flexible, and eye‐transparent future solar cells.     

Spatial Mapping of Hot‐Spots at Lateral Heterogeneities in Monolayer Transition Metal Dichalcogenides

Lateral heterogeneities in atomically thin 2D materials such as in‐plane heterojunctions and grain boundaries (GBs) provide an extrinsic knob for manipulating the properties of nano‐ and optoelectronic devices and harvesting novel functionalities. However, these heterogeneities have the potential to adversely affect the performance and reliability of the 2D devices through the formation of nanoscopic hot‐spots. In this report, scanning thermal microscopy (SThM) is utilized to map the spatial distribution of the temperature rise within monolayer transition metal dichalcogenide (TMD) devices upon dissipating a high electrical power through a lateral interface. The results directly demonstrate that lateral heterojunctions between MoS₂ and WS₂ do not largely impact the distribution of heat dissipation, while GBs of MoS₂ appreciably localize heating in the device. High‐resolution scanning transmission electron microscopy reveals that the atomic structure is nearly flawless around heterojunctions but can be quite defective near GBs. The results suggest that the interfacial atomic structure plays a crucial role in enabling uniform charge transport without inducing localized heating. Establishing such structure–property‐processing correlation provides a better understanding of lateral heterogeneities in 2D TMD systems which is crucial in the design of future all‐2D electronic circuitry with enhanced functionalities, lifetime, and performance.     

Single Atomically Sharp Lateral Monolayer p‐n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency

The recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p‐n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development for high‐efficiency photovoltaic (PV) devices. Here, the PV properties of sequentially grown alloy‐free 2D monolayer WSe₂‐MoS₂ lateral p‐n heterojunction are explores. The PV devices show an extraordinary power conversion efficiency of 2.56% under AM 1.5G illumination. The large surface active area enables the full exposure of the depletion region, leading to excellent omnidirectional light harvesting characteristic with only 5% reduction of efficiency at incident angles up to 75°. Modeling studies demonstrate the PV devices comply with typical principles, increasing the feasibility for further development. Furthermore, the appropriate electrode‐spacing design can lead to environment‐independent PV properties. These robust PV properties deriving from the atomically sharp lateral p‐n interface can help develop the next‐generation photovoltaics.     

Efficient Catalysis of Hydrogen Evolution Reaction from WS2(1−x)P2x Nanoribbons

The rational design of Earth abundant electrocatalysts for efficiently catalyzing hydrogen evolution reaction (HER) is believed to lead to the generation of carbon neutral energy carrier. Owing to their fascinating chemical and physical properties, transition metal dichalcogenides (TMDs) are widely studied for this purpose. Of particular note is that doping by foreign atom can bring the advent of electronic perturbation, which affects the intrinsic catalytic property. Hence, through doping, the catalytic activity of such materials could be boosted. A rational synthesis approach that enables phosphorous atom to be doped into WS₂ without inducing phase impurity to form WS_{2(1? x )}P_{2 x} nanoribbon (NRs) is herein reported. It is found that the WS_{2(1? x )}P_{2 x} NRs exhibit considerably enhanced HER performance, requiring only ?98 mV versus reversible hydrogen electrode to achieve a current density of ?10 mA cm^?2. Such a high performance can be attributed to the ease of H‐atom adsorption and desorption due to intrinsically tuned WS₂, and partial formation of NRs, a morphology wherein the exposure of active edges is more pronounced. This finding can provide a fertile ground for subsequent works aiming at tuning intrinsic catalytic activity of TMDs.     

Strongly enhanced electromechanical coupling in atomically thin transition metal dichalcogenides

Flexoelectricity in thin films has emerged as an effective electromechanical response owing to appealing scaling law and universal existence. However, current studies show limited out-of-plane converse flexoelectric effect (CFE) of ultra-thin transition metal dichalcogenides (TMDs) when compared to their conventional in-plane piezoresponse. Here, we report converse flexoresponse of atomically thin TMDs such as molybdenum disulfide (MoS₂) and tungsten diselenide (WSe₂) which exceeds their intrinsic in-plane piezoresponses. Our piezoresponse force microscopy (PFM) measurements revealed strongly enhanced CFE of the atomically thin MoS₂ and WSe₂ than their bulk counterpart (∼700% enhancement in MoS₂, ∼400% enhancement in WSe₂). We observed an anomalous reduction in converse flexoresponse in the monolayer structure attributed to a puckering deformation. By inducing a built-in in-plane tension to reduce puckering, we estimated the CFE of monolayer WSe₂ to be 8.14 pm/V, the highest among the atomically thin TMDs.     

Direct optical-structure correlation in atomically thin dichalcogenides and heterostructures

Atomically thin transition metal dichalcogenides (TMDs) have distinct opto-electronic properties including enhanced luminescence and high on-off current ratios, which can be further modulated by making more complex TMD heterostructures. However, resolution limits of conventional optical methods do not allow for direct nanoscale optical-structural correlation measurements in these materials, particularly of buried interfaces in TMD heterostructures. Here we use, for the first time, electron beam induced cathodoluminescence in a scanning transmission electron microscope (CL-STEM) to measure optical properties of monolayer TMDs (WS₂, MoS₂ and WSSe alloy) encapsulated between layers of hBN. We observe dark areas resulting from localized (~ 100 nm) imperfect interfaces and monolayer folding, which shows that the intimate contact between layers in this application-relevant heterostructure is required for proper inter layer coupling. We also realize a suitable imaging method that minimizes electron-beam induced changes and provides measurement of intrinsic properties. To overcome the limitation of small electron interaction volume in TMD monolayer (and hence low photon yield), we find that encapsulation of TMD monolayers with hBN and subsequent annealing is important. CL-STEM offers to be a powerful method to directly measure structure-optical correspondence in lateral or vertical heterostructures and alloys.

     

Bandgap-tunable lateral and vertical heterostructures based on monolayer Mo<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript>W<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>2</Subscript> alloys

The fabrication of heterostructures of two-dimensional semiconductors with specific bandgaps is an important approach to realizing the full potential of these materials in electronic and optoelectronic devices. Several groups have recently reported the direct growth of lateral and vertical heterostructures based on monolayers of typical semiconducting transition metal dichalcogenides (TMDCs) such as WSe₂, MoSe₂, WS₂, and MoS₂. Here, we demonstrate the single-step direct growth of lateral and vertical heterostructures based on bandgap-tunable Mo_1-x W _x S₂ alloy monolayers by the sulfurization of patterned thin films of WO₃ and MoO₃. These patterned films are capable of generating a wide variety of concentration gradients by the diffusion of transition metals during the crystal growth phase. Under high temperatures, this leads to the formation of monolayer crystals of Mo_1-x W _x S₂ alloys with various compositions and bandgaps, depending on the positions of the crystals on the substrates. Heterostructures of these alloys are obtained through stepwise changes in the ratio of W/Mo within a single domain during low-temperature growth. The stabilization of the monolayer Mo_1-x W _x S₂ alloys, which often degrade even under gentle conditions, was accomplished by coating the alloys with other monolayers. The present findings demonstrate an efficient means of both studying and optimizing the optical and electrical properties of TMDC-based heterostructures to allow use of the materials in future device applications.

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A Single Chiral Nanoparticle Induced Valley Polarization Enhancement

Valley polarization is among the most critical attributes of atomically thin materials. However, increasing contrast from monolayer transition metal dichalcogenides (TMDs) has so far been challenging. In this work, a large degree of circular polarization up to 45% from a monolayer WS₂ is achieved at room temperature by using a single chiral plasmonic nanoparticle. The increased contrast is attributed to the selective enhancement of both the excitation and the emission rate having one particular handedness of the circular polarization, together with accelerated radiative recombination of valley excitons due to the Purcell effect. The experimental results are corroborated by the optical simulation using the finite‐difference time‐domain (FDTD) method. Additionally, the single chiral nanoparticle enables the observation of valley‐polarized luminescence with a linear excitation. The results provide a promising pathway to enhance valley contrast from monolayer TMDs and utilize them for nanophotonic devices.     

Recent Advances in Rolling 2D TMDs Nanosheets into 1D TMDs Nanotubes/Nanoscrolls

Transition metal dichalcogenides (TMDs) van der Waals (vdW) 1D heterostructures are recently synthesized from 2D nanosheets, which open up new opportunities for potential applications in electronic and optoelectronic devices. The most recent and promising strategies in regards to forming 1D TMDs nanotubes (NTs) or nanoscrolls (NSs) in this review article as well as their heterostructures that are produced from 2D TMDs are summarized. In order to improve the functionality of ultrathin 1D TMDs that are coaxially combined with boron nitride nanotubes and single-walled carbon nanotubes. 1D heterostructured devices perform better than 2D TMD nanosheets when the two devices are compared. The photovoltaic effect in WS₂ or MoS₂ NTs without a junction may exceed the Shockley–Queisser limit for the above-band-gap photovoltage generation. Photoelectrochemical hydrogen evolution is accelerated when monolayer WS₂ or MoS₂ NSs are incorporated into a heterojunction. In addition, the photovoltaic performance of the WSe₂/MoS₂ NSs junction is superior to that of the performance of MoS₂ NSs. The summary of the current research about 1D TMDs can be used in a variety of ways, which assists in the development of new types of nanoscale optoelectronic devices. Finally, it also summarizes the current challenges and prospects.     

Lateral Monolayer MoSe2–WSe2 p–n Heterojunctions with Giant Built‐In Potentials

2D transition metal dichalcogenides (TMDs) have exhibited strong application potentials in new emerging electronics because of their atomic thin structure and excellent flexibility, which is out of field of tradition silicon technology. Similar to 3D p–n junctions, 2D p–n heterojunctions by laterally connecting TMDs with different majority charge carriers (electrons and holes), provide ideal platform for current rectifiers, light‐emitting diodes, diode lasers and photovoltaic devices. Here, growth and electrical studies of atomic thin high‐quality p–n heterojunctions between molybdenum diselenide (MoSe₂) and tungsten diselenide (WSe₂) by one‐step chemical vapor deposition method are reported. These p–n heterojunctions exhibit high built‐in potential (≈0.7 eV), resulting in large current rectification ratio without any gate control for diodes, and fast response time (≈6 ms) for self‐powered photodetectors. The simple one‐step growth and electrical studies of monolayer lateral heterojunctions open up the possibility to use TMD heterojunctions for functional devices.     

Self-Assembly of Mixed-Dimensional GeS1−xSex (1D Nanowire)–(2D Plate) Van der Waals Heterostructures

The integration of dissimilar materials into heterostructures is a mainstay of modern materials science and technology. An alternative strategy of joining components with different electronic structure involves mixed-dimensional heterostructures, that is, architectures consisting of elements with different dimensionality, for example, 1D nanowires and 2D plates. Combining the two approaches can result in hybrid architectures in which both the dimensionality and composition vary between the components, potentially offering even larger contrast between their electronic structures. To date, realizing such heteromaterials mixed-dimensional heterostructures has required sequential multi-step growth processes. Here, it is shown that differences in precursor incorporation rates between vapor–liquid–solid growth of 1D nanowires and direct vapor–solid growth of 2D plates attached to the wires can be harnessed to synthesize heteromaterials mixed-dimensional heterostructures in a single-step growth process. Exposure to mixed GeS and GeSe vapors produces GeS_1−xSe_x van der Waals nanowires whose S:Se ratio is considerably larger than that of attached layered plates. Cathodoluminescence spectroscopy on single heterostructures confirms that the bandgap contrast between the components is determined by both composition and carrier confinement. These results demonstrate an avenue toward complex heteroarchitectures using single-step synthesis processes.     

Electro-Optic Upconversion in van der Waals Heterostructures via Nonequilibrium Photocarrier Tunneling

Ultrafast interlayer charge transfer is one of the most distinct features of van der Waals (vdW) heterostructures. Its dynamics competes with carrier thermalization such that the energy of nonthermalized photocarriers may be harnessed by band engineering. In this study, nonthermalized photocarrier energy is harnessed to achieve near-infrared (NIR) to visible light upconversion in a metal–insulator–semiconductor (MIS) vdW heterostructure tunnel diode consisting of few-layer graphene (FLG), hexagonal boron nitride (hBN), and monolayer tungsten disulfide (WS₂). Photoexcitation of the electrically biased heterostructure with 1.58 eV NIR laser in the linear absorption regime generates emission from the ground exciton state of WS₂, which corresponds to upconversion by ≈370 meV. The upconversion is realized by electrically assisted interlayer transfer of nonthermalized photoexcited holes from FLG to WS₂, followed by formation and radiative recombination of excitons in WS₂. The photocarrier transfer rate can be described by Fowler–Nordheim tunneling mechanism and is electrically tunable by two orders of magnitude by tuning voltage bias applied to the device. This study highlights the prospects for realizing novel electro-optic upconversion devices by exploiting electrically tunable nonthermalized photocarrier relaxation dynamics in vdW heterostructures.     

Controlling Photoluminescence Enhancement and Energy Transfer in WS2:hBN:WS2 Vertical Stacks by Precise Interlayer Distances

2D semiconducting transition metal dichalcogenides (TMDs) are endowed with fascinating optical properties especially in their monolayer limit. Insulating hBN films possessing customizable thickness can act as a separation barrier to dictate the interactions between TMDs. In this work, vertical layered heterostructures (VLHs) of WS₂:hBN:WS₂ are fabricated utilizing chemical vapor deposition (CVD)‐grown materials, and the optical performance is evaluated through photoluminescence (PL) spectroscopy. Apart from the prohibited indirect optical transition due to the insertion of hBN spacers, the variation in the doping level of WS₂ drives energy transfer to arise from the layer with lower quantum efficiency to the other layer with higher quantum efficiency, whereby the total PL yield of the heterosystem is increased and the stack exhibits a higher PL intensity compared to the sum of those in the two WS₂ constituents. Such doping effects originate from the interfaces that WS₂ monolayers reside on and interact with. The electron density in the WS₂ is also controlled and subsequent modulation of PL in the heterostructure is demonstrated by applying back‐gated voltages. Other influential factors include the strain in WS₂ and temperature. Being able to tune the energy transfer in the VLHs may expand the development of photonic applications in 2D systems.     

Band‐Gap Engineering at a Semiconductor–Crystalline Oxide Interface

The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to electrically coupling crystalline oxides with semiconductors to realize functional behavior is to control the manner in which their bands align at interfaces. Here, principles of band‐gap engineering traditionally used at heterojunctions between conventional semiconductors are applied to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZr_xTi_1−xO₃ and Ge, in which the band‐gap of the former is enhanced with Zr content x. Structural and electrical characterization of SrZr_xTi_1−xO₃‐Ge heterojunctions for x = 0.2 to 0.75 are presented and it is demonstrated that the band offset can be tuned from type‐II to type‐I, with the latter being verified using photoemission measurements. The type‐I band offset provides a platform to integrate the dielectric, ferroelectric, and ferromagnetic functionalities of oxides with semiconducting devices.     

Controlling Structural Anisotropy of Anisotropic 2D Layers in Pseudo‐1D/2D Material Heterojunctions

Chemical vapor deposition and growth dynamics of highly anisotropic 2D lateral heterojunctions between pseudo‐1D ReS₂ and isotropic WS₂ monolayers are reported for the first time. Constituent ReS₂ and WS₂ layers have vastly different atomic structure, crystallizing in anisotropic 1T′ and isotropic 2H phases, respectively. Through high‐resolution scanning transmission electron microscopy, electron energy loss spectroscopy, and angle‐resolved Raman spectroscopy, this study is able to provide the very first atomic look at intimate interfaces between these dissimilar 2D materials. Surprisingly, the results reveal that ReS₂ lateral heterojunctions to WS₂ produce well‐oriented (highly anisotropic) Re‐chains perpendicular to WS₂ edges. When vertically stacked, Re‐chains orient themselves along the WS₂ zigzag direction, and consequently, Re‐chains exhibit six‐fold rotation, resulting in loss of macroscopic scale anisotropy. The degree of anisotropy of ReS₂ on WS₂ largely depends on the domain size, and decreases for increasing domain size due to randomization of Re‐chains and formation of ReS₂ subdomains. Present work establishes the growth dynamics of atomic junctions between novel anisotropic/isotropic 2D materials, and overall results mark the very first demonstration of control over anisotropy direction, which is a significant leap forward for large‐scale nanomanufacturing of anisotropic systems.     

Designing Champion Nanostructures of Tungsten Dichalcogenides for Electrocatalytic Hydrogen Evolution

Fine-tuning strain and vacancies in 2H-phase transition-metal dichalcogenides, although extremely challenging, is crucial for activating the inert basal plane for boosting the hydrogen evolution reaction (HER). Here, atomically curved 2H-WS₂ nanosheets with precisely tunable strain and sulfur vacancies (S-vacancies) along with rich edge sites are synthesized via a one-step approach by harnessing geometric constraints. The approach is based on the confined epitaxy growth of WS₂ in ordered mesoporous graphene derived from nanocrystal superlattices. The spherical curvature imposed by the graphitic mesopores enables the generation of uniform strain and S-vacancies in the as-grown WS₂ nanosheets, and simultaneous manipulation of these two key parameters can be realized by simply adjusting the pore size. In addition, the formation of unique mesoporous WS₂@graphene van der Waals heterostructures ensures the ready access of active sites. Fine-tuning the WS₂ layer number, strain, and S-vacancies enables arguably the best-performing HER 2H-WS₂ electrocatalysts ever reported. Density functional theory calculations indicate that compared with strain, S-vacancies play a more critical role in enhancing the HER activity.     

Superconductivity of Topological Surface States and Strong Proximity Effect in Sn1−xPbxTe–Pb Heterostructures

Superconducting topological crystalline insulators are expected to form a new type of topological superconductors to host Majorana zero modes under the protection of lattice symmetries. The bulk superconductivity of topological crystalline insulators can be induced through chemical doping and the proximity effect. However, only conventional full gaps are observed, so the existence of topological superconductivity in topological crystalline insulators is still controversial. Here, the successful fabrication of atomically flat lateral and vertical Sn_1?xPb_xTe–Pb heterostructures by molecular beam epitaxy is reported. The superconductivity of the Sn_1?xPb_xTe–Pb heterostructures can be directly investigated by scanning tunneling spectroscopy. Unconventional peak–dip–hump gap features and fourfold symmetric quasiparticle interference patterns taken at the zero energy in the superconducting gap support the presence of the topological superconductivity in superconducting Sn_1?xPb_xTe. Strong superconducting proximity effect and easy preparation of various constructions between Sn_1?xPb_xTe and Pb make the heterostructures to be a promising candidate for topological superconducting devices to detect and manipulate Majorana zero modes in the future.     

In-situ energy-dispersive X-ray diffraction of metal sulfide assisted crystallization of strongly (001) textured photoactive tungsten disulfide thin films

Highly (001) textured tungsten disulphide (WS₂) thin films were grown by rapid metal (Ni, Pd) sulfide assisted crystallization of amorphous reactively sputtered sulfur-rich tungsten sulfide (WS_3 + x) and by metal sulfide assisted sulfurization of tungsten metal films. The rapid crystallization was monitored by real-time in-situ energy dispersive X-ray diffraction (EDXRD). Provided that a thin nickel or palladium film was deposited prior to the deposition of WS_3 + x or W, the films crystallized very fast (about 20 nm/s) at temperatures above the metal sulfide eutectic temperature. After crystallization, isolated MeS_x crystallites are located on the surface of the WS₂ layer, which was proved by scanning electron microscopy. The metal sulfide assisted crystallized WS₂ layers exhibit a pronounced (001) orientation with large crystallites up to 2 µm. The in-situ EDXRD analysis revealed distinct differences of the two crystallization routes from tungsten and from amorphous, sulfur-rich WS_3 + x precursors, respectively. The crystallized WS₂ films showed photoactivity. Combined with the high absorption coefficient of 10⁵ cm^− 1 and a indirect band gap of 1.8 eV these properties make such films suitable for absorber layers in thin film solar cells.