共查询到20条相似文献,搜索用时 15 毫秒
1.
Junjiang Tian Haijun Wu Zhen Fan Yang Zhang Stephen J. Pennycook Dongfeng Zheng Zhengwei Tan Haizhong Guo Pu Yu Xubing Lu Guofu Zhou Xingsen Gao Jun‐Ming Liu 《Advanced materials (Deerfield Beach, Fla.)》2019,31(49)
Resistive switching (RS) memory has stayed at the forefront of next‐generation nonvolatile memory technologies. Recently, a novel class of transition metal oxides (TMOs), which exhibit reversible topotactic phase transformation between insulating brownmillerite (BM) phase and conducting perovskite (PV) phase, has emerged as promising candidate materials for RS memories. Nevertheless, the microscopic mechanism of RS in these TMOs is still unclear. Furthermore, RS devices with simultaneously high density and superior memory performance are yet to be reported. Here, using SrFeOx as a model system, it is directly observed that PV SrFeO3 nanofilaments are formed and extend almost through the BM SrFeO2.5 matrix in the ON state and are ruptured in the OFF state, unambiguously revealing a filamentary RS mechanism. The nanofilaments are ≈10 nm in diameter, enabling to downscale Au/SrFeOx/SrRuO3 RS devices to the 100 nm range for the first time. These nanodevices exhibit good performance including ON/OFF ratio as high as ≈104, retention time over 105 s, and endurance up to 107 cycles. This study significantly advances the understanding of the RS mechanism in TMOs exhibiting topotactic phase transformation, and it also demonstrates the potential of these materials for use in high‐density RS memories. 相似文献
2.
Controllable Organic Resistive Switching Achieved by One‐Step Integration of Cone‐Shaped Contact
下载免费PDF全文
![点击此处可从《Advanced materials (Deerfield Beach, Fla.)》网站下载免费的PDF全文](/ch/ext_images/free.gif)
Haifeng Ling Mingdong Yi Masaru Nagai Linghai Xie Laiyuan Wang Bo Hu Wei Huang 《Advanced materials (Deerfield Beach, Fla.)》2017,29(35)
Conductive filaments (CFs)‐based resistive random access memory possesses the ability of scaling down to sub‐nanoscale with high‐density integration architecture, making it the most promising nanoelectronic technology for reclaiming Moore's law. Compared with the extensive study in inorganic switching medium, the scientific challenge now is to understand the growth kinetics of nanoscale CFs in organic polymers, aiming to achieve controllable switching characteristics toward flexible and reliable nonvolatile organic memory. Here, this paper systematically investigates the resistive switching (RS) behaviors based on a widely adopted vertical architecture of Al/organic/indium‐tin‐oxide (ITO), with poly(9‐vinylcarbazole) as the case study. A nanoscale Al filament with a dynamic‐gap zone (DGZ) is directly observed using in situ scanning transmission electron microscopy (STEM) , which demonstrates that the RS behaviors are related to the random formation of spliced filaments consisting of Al and oxygen vacancy dual conductive channels growing through carbazole groups. The randomicity of the filament formation can be depressed by introducing a cone‐shaped contact via a one‐step integration method. The conical electrode can effectively shorten the DGZ and enhance the localized electric field, thus reducing the switching voltage and improving the RS uniformity. This study provides a deeper insight of the multiple filamentary mechanisms for organic RS effect. 相似文献
3.
Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects
下载免费PDF全文
![点击此处可从《Advanced materials (Deerfield Beach, Fla.)》网站下载免费的PDF全文](/ch/ext_images/free.gif)
Xiaolong Zhao Jun Ma Xiangheng Xiao Qi Liu Lin Shao Di Chen Sen Liu Jiebin Niu Xumeng Zhang Yan Wang Rongrong Cao Wei Wang Zengfeng Di Hangbing Lv Shibing Long Ming Liu 《Advanced materials (Deerfield Beach, Fla.)》2018,30(14)
Cation‐based resistive switching (RS) devices, dominated by conductive filaments (CF) formation/dissolution, are widely considered for the ultrahigh density nonvolatile memory application. However, the current‐retention dilemma that the CF stability deteriorates greatly with decreasing compliance current makes it hard to decrease operating current for memory application and increase driving current for selector application. By centralizing/decentralizing the CF distribution, this current‐retention dilemma of cation‐based RS devices is broken for the first time. Utilizing the graphene impermeability, the cation injecting path to the RS layer can be well modulated by structure‐defective graphene, leading to control of the CF quantity and size. By graphene defect engineering, a low operating current (≈1 µA) memory and a high driving current (≈1 mA) selector are successfully realized in the same material system. Based on systematically materials analysis, the diameter of CF, modulated by graphene defect size, is the major factor for CF stability. Breakthrough in addressing the current‐retention dilemma will instruct the future implementation of high‐density 3D integration of RS memory immune to crosstalk issues. 相似文献
4.
Resistive Switching: Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects (Adv. Mater. 14/2018)
下载免费PDF全文
![点击此处可从《Advanced materials (Deerfield Beach, Fla.)》网站下载免费的PDF全文](/ch/ext_images/free.gif)
Xiaolong Zhao Jun Ma Xiangheng Xiao Qi Liu Lin Shao Di Chen Sen Liu Jiebin Niu Xumeng Zhang Yan Wang Rongrong Cao Wei Wang Zengfeng Di Hangbing Lv Shibing Long Ming Liu 《Advanced materials (Deerfield Beach, Fla.)》2018,30(14)
5.
Deok‐Hwang Kwon Shinbuhm Lee Chan Soon Kang Yong Seok Choi Sung Jin Kang Hae Lim Cho Woonbae Sohn Janghyun Jo Seung‐Yong Lee Kyu Hwan Oh Tae Won Noh Roger A. De Souza Manfred Martin Miyoung Kim 《Advanced materials (Deerfield Beach, Fla.)》2019,31(28)
Three central themes in the study of the phenomenon of resistive switching are the nature of the conducting phase, why it forms, and how it forms. In this study, the answers to all three questions are provided by performing switching experiments in situ in a transmission electron microscope on thin films of the model system polycrystalline SrTiO3. On the basis of high‐resolution transmission electron microscopy, electron‐energy‐loss spectroscopy and in situ current–voltage measurements, the conducting phase is identified to be SrTi11O20. This phase is only observed at specific grain boundaries, and a Ruddlesden–Popper phase, Sr3Ti2O7, is typically observed adjacent to the conducting phase. These results allow not only the proposal that filament formation in this system has a thermodynamic origin—it is driven by electrochemical polarization and the local oxygen activity in the film decreasing below a critical value—but also the deduction of a phase diagram for strongly reduced SrTiO3. Furthermore, why many conducting filaments are nucleated at one electrode but only one filament wins the race to the opposite electrode is also explained. The work thus provides detailed insights into the origin and mechanisms of filament generation and rupture. 相似文献
6.
7.
8.
9.
10.
11.
12.
13.
Jiaqi Xu Xiaoning Zhao Zhongqiang Wang Haiyang Xu Junli Hu Jiangang Ma Yichun Liu 《Small (Weinheim an der Bergstrasse, Germany)》2019,15(4)
Transient electronics that can physically vanish in solution can offer opportunities to address the ecological challenges for dealing with the rapidly growing electronic waste. As one important component, it is desirable that memory devices combined with the transient feature can also be developed as secrecy information storage systems besides the above advantage. Resistive switching (RS) memory is one of the most promising technologies for next‐generation memory. Herein, the biocompatible pectin extracted from natural orange peel is introduced to fabricate RS memory devices (Ag/pectin/indium tin oxides (ITO)), which exhibit excellent RS characteristics, such as forming free characteristic, low operating voltages (≈1.1 V), fast switching speed (<70 ns), long retention time (>104 s), and multilevel RS behaviors. The device performance is not degraded after 104 bending cycles, which will be beneficial for flexible memory applications. Additionally, instead of using acid solution, the Ag/pectin/ITO memory device can be dissolved rapidly in deionized water within 10 min thanks to the good solubility arising from ionization of its carboxylic groups, which shows promising application for green electronics. The present biocompatible memory devices based on natural pectin suggest promising material candidates toward enabling high‐density secure information storage systems applications, flexible electronics, and green electronics. 相似文献
14.
15.
Juan Carlos Gonzalez‐Rosillo Sara Catalano Ivan Maggio‐Aprile Marta Gibert Xavier Obradors Anna Palau Teresa Puig 《Small (Weinheim an der Bergstrasse, Germany)》2020,16(23)
Strongly correlated perovskite oxides are a class of materials with fascinating intrinsic physical functionalities due to the interplay of charge, spin, orbital ordering, and lattice degrees of freedom. Among the exotic phenomena arising from such an interplay, metal–insulator transitions (MITs) are fundamentally still not fully understood and are of large interest for novel nanoelectronics applications, such as resistive switching‐based memories and neuromorphic computing devices. In particular, rare‐earth nickelates and lanthanum strontium manganites are archetypical examples of bandwidth‐controlled and band‐filling‐controlled MIT, respectively, which are used in this work as a playground to correlate the switching characteristics of the oxides and their MIT properties by means of local probe techniques in a systematic manner. These findings suggest that an electric‐field‐induced MIT can be triggered in these strongly correlated systems upon generation of oxygen vacancies and establish that lower operational voltages and larger resistance ratios are obtained in those films where the MIT lies closer to room temperature. This work demonstrates the potential of using MITs in the next generation of nanoelectronics devices. 相似文献
16.
17.
Photocatalytic Reduction of Graphene Oxide–TiO2 Nanocomposites for Improving Resistive‐Switching Memory Behaviors
下载免费PDF全文
![点击此处可从《Small (Weinheim an der Bergstrasse, Germany)》网站下载免费的PDF全文](/ch/ext_images/free.gif)
Xiaoning Zhao Zhongqiang Wang Yu Xie Haiyang Xu Jiaxue Zhu Xintong Zhang Weizhen Liu Guochun Yang Jiangang Ma Yichun Liu 《Small (Weinheim an der Bergstrasse, Germany)》2018,14(29)
Graphene oxide (GO)‐based resistive‐switching (RS) memories offer the promise of low‐temperature solution‐processability and high mechanical flexibility, making them ideally suited for future flexible electronic devices. The RS of GO can be recognized as electric‐field‐induced connection/disconnection of nanoscale reduced graphene oxide (RGO) conducting filaments (CFs). Instead of operating an electrical FORMING process, which generally results in high randomness of RGO CFs due to current overshoot, a TiO2‐assisted photocatalytic reduction method is used to generate RGO‐domains locally through controlling the UV irradiation time and TiO2 concentration. The elimination of the FORMING process successfully suppresses the RGO overgrowth and improved RS memory characteristics are achieved in graphene oxide–TiO2 (Go‐TiO2) nanocomposites, including reduced SET voltage, improved switching variability, and increased switching speed. Furthermore, the room‐temperature process of this method is compatible with flexible plastic substrates and the memory cells exhibit excellent flexibility. Experimental results evidence that the combined advantages of reducing the oxygen‐migration barrier and enhancing the local‐electric‐field with RGO‐manipulation are responsible for the improved RS behaviors. These results offer valuable insight into the role of RGO‐domains in GO memory devices, and also, this mild photoreduction method can be extended to the development of carbon‐based flexible electronics. 相似文献
18.
In Situ Tuning of Switching Window in a Gate‐Controlled Bilayer Graphene‐Electrode Resistive Memory Device
下载免费PDF全文
![点击此处可从《Advanced materials (Deerfield Beach, Fla.)》网站下载免费的PDF全文](/ch/ext_images/free.gif)
He Tian Haiming Zhao Xue‐Feng Wang Qian‐Yi Xie Hong‐Yu Chen Mohammad Ali Mohammad Cheng Li Wen‐Tian Mi Zhi Bie Chao‐Hui Yeh Yi Yang H.‐S. Philip Wong Po‐Wen Chiu Tian‐Ling Ren 《Advanced materials (Deerfield Beach, Fla.)》2015,27(47):7767-7774
19.
Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies
下载免费PDF全文
![点击此处可从《Advanced materials (Deerfield Beach, Fla.)》网站下载免费的PDF全文](/ch/ext_images/free.gif)
Chao Li Bin Gao Yuan Yao Xiangxiang Guan Xi Shen Yanguo Wang Peng Huang Lifeng Liu Xiaoyan Liu Junjie Li Changzhi Gu Jinfeng Kang Richeng Yu 《Advanced materials (Deerfield Beach, Fla.)》2017,29(10)
20.
Yaowei Hu Matthieu Picher Marlène Palluel Nathalie Daro Eric Freysz Laurentiu Stoleriu Cristian Enachescu Guillaume Chastanet Florian Banhart 《Small (Weinheim an der Bergstrasse, Germany)》2023,19(39):2303701
An unusual expansion dynamics of individual spin crossover nanoparticles is studied by ultrafast transmission electron microscopy. After exposure to nanosecond laser pulses, the particles exhibit considerable length oscillations during and after their expansion. The vibration period of 50–100 ns is of the same order of magnitude as the time that the particles need for a transition from the low-spin to the high-spin state. The observations are explained in Monte Carlo calculations using a model where elastic and thermal coupling between the molecules within a crystalline spin crossover particle govern the phase transition between the two spin states. The experimentally observed length oscillations are in agreement with the calculations, and it is shown that the system undergoes repeated transitions between the two spin states until relaxation in the high-spin state occurs due to energy dissipation. Spin crossover particles are therefore a unique system where a resonant transition between two phases occurs in a phase transformation of first order. 相似文献