Iodine Vacancy Redistribution in Organic–Inorganic Halide Perovskite Films and Resistive Switching Effects

Organic–inorganic halide perovskite (OHP) materials, for example, CH₃NH₃PbI₃ (MAPbI₃), have attracted significant interest for applications such as solar cells, photodectors, light‐emitting diodes, and lasers. Previous studies have shown that charged defects can migrate in perovskites under an electric field and/or light illumination, potentially preventing these devices from practical applications. Understanding and control of the defect generation and movement will not only lead to more stable devices but also new device concepts. Here, it is shown that the formation/annihilation of iodine vacancies (V_I's) in MAPbI₃ films, driven by electric fields and light illumination, can induce pronounced resistive switching effects. Due to a low diffusion energy barrier (≈0.17 eV), the V_I's can readily drift under an electric field, and spontaneously diffuse with a concentration gradient. It is shown that the V_I diffusion process can be suppressed by controlling the affinity of the contact electrode material to I^? ions, or by light illumination. An electrical‐write and optical‐erase memory element is further demonstrated by coupling ion migration with electric fields and light illumination. These results provide guidance toward improved stability and performance of perovskite‐based optoelectronic systems, and can lead to the development of solid‐state devices that couple ionics, electronics, and optics.     

Pseudohalide‐Induced 2D (CH3NH3)2PbI2(SCN)2 Perovskite for Ternary Resistive Memory with High Performance

Recently, organic–inorganic hybrid perovskites (OIHP) are studied in memory devices, but ternary resistive memory with three states based on OIHP is not achieved yet. In this work, ternary resistive memory based on hybrid perovskite is achieved with a high device yield (75%), much higher than most organic ternary resistive memories. The pseudohalide‐induced 2D (CH₃NH₃)₂PbI₂(SCN)₂ perovskite thin film is prepared by using a one‐step solution method and fabricated into Al/perovskite film/indium–tin oxide (glass substrate as well as flexible polyethylene terephthalate substrate) random resistive access memory (RRAM) devices. The three states have a conductivity ratio of 1:10³:10⁷, long retention over 10 000 s, and good endurance properties. The electrode area variation, impedance test, and current–voltage plotting show that the two resistance switches are attributable to the charge trap filling due to the effect of unscreened defect in 2D nanosheets and the formation of conductive filaments, respectively. This work paves way for stable perovskite multilevel RRAMs in ambient atmosphere.     

Large‐Scale Synthesis of Freestanding Layer‐Structured PbI2 and MAPbI3 Nanosheets for High‐Performance Photodetection

Recently, due to the possibility of thinning down to the atomic thickness to achieve exotic properties, layered materials have attracted extensive research attention. In particular, PbI₂, a kind of layered material, and its perovskite derivatives, CH₃NH₃PbI₃ (i.e., MAPbI₃), have demonstrated impressive photoresponsivities for efficient photodetection. Herein, the synthesis of large‐scale, high‐density, and freestanding PbI₂ nanosheets is demonstrated by manipulating the microenvironment during physical vapor deposition. In contrast to conventional two‐dimensional (2D) growth along the substrate surface, the essence here is the effective nucleation of microplanes with different angles relative to the in‐plane direction of underlying rough‐surfaced substrates. When configured into photodetectors, the fabricated device exhibits a photoresponsivity of 410 mA W^?1, a detectivity of 3.1 × 10¹¹ Jones, and a fast response with the rise and decay time constants of 86 and 150 ms, respectively, under a wavelength of 405 nm. These PbI₂ nanosheets can also be completely converted into MAPbI₃ materials via chemical vapor deposition with an improved photoresponsivity up to 40 A W^?1. All these performance parameters are comparable to those of state‐of‐the‐art layered‐material‐based photodetectors, revealing the technological potency of these freestanding nanosheets for next‐generation high‐performance optoelectronics.     

Divalent Anionic Doping in Perovskite Solar Cells for Enhanced Chemical Stability

The chemical stabilities of hybrid perovskite materials demand further improvement toward long‐term and large‐scale photovoltaic applications. Herein, the enhanced chemical stability of CH₃NH₃PbI₃ is reported by doping the divalent anion Se^2? in the form of PbSe in precursor solutions to enhance the hydrogen‐bonding‐like interactions between the organic cations and the inorganic framework. As a result, in 100% humidity at 40 °C, the 10% w/w PbSe‐doped CH₃NH₃PbI₃ films exhibited >140‐fold stability improvement over pristine CH₃NH₃PbI₃ films. As the PbSe‐doped CH₃NH₃PbI₃ films maintained the perovskite structure, a top efficiency of 10.4% with 70% retention after 700 h aging in ambient air is achieved with an unencapsulated 10% w/w PbSe:MAPbI₃‐based cell. As a bonus, the incorporated Se^2? also effectively suppresses iodine diffusion, leading to enhanced chemical stability of the silver electrodes.     

Topotactic Phase Transition Driving Memristive Behavior

Redox‐based memristive devices are one of the most attractive candidates for future nonvolatile memory applications and neuromorphic circuits, and their performance is determined by redox processes and the corresponding oxygen‐ion dynamics. In this regard, brownmillerite SrFeO_2.5 has been recently introduced as a novel material platform due to its exceptional oxygen‐ion transport properties for resistive‐switching memory devices. However, the underlying redox processes that give rise to resistive switching remain poorly understood. By using X‐ray absorption spectromicroscopy, it is demonstrated that the reversible redox‐based topotactic phase transition between the insulating brownmillerite phase, SrFeO_2.5, and the conductive perovskite phase, SrFeO₃, gives rise to the resistive‐switching properties of SrFeO_x memristive devices. Furthermore, it is found that the electric‐field‐induced phase transition spreads over a large area in (001) oriented SrFeO_2.5 devices, where oxygen vacancy channels are ordered along the in‐plane direction of the device. In contrast, (111)‐grown SrFeO_2.5 devices with out‐of‐plane oriented oxygen vacancy channels, reaching from the bottom to the top electrode, show a localized phase transition. These findings provide detailed insight into the resistive‐switching mechanism in SrFeO_x‐based memristive devices within the framework of metal–insulator topotactic phase transitions.     

High‐Performance Solution‐Processed Organo‐Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross‐Bar Array Structure

Resistive random access memories can potentially open a niche area in memory technology applications by combining the advantages of the long endurance of dynamic random‐access memory and the long retention time of flash memories. Recently, resistive memory devices based on organo‐metal halide perovskite materials have demonstrated outstanding memory properties, such as a low‐voltage operation and a high ON/OFF ratio; such properties are essential requirements for low power consumption in developing practical memory devices. In this study, a nonhalide lead source is employed to deposit perovskite films via a simple single‐step spin‐coating method for fabricating unipolar resistive memory devices in a cross‐bar array architecture. These unipolar perovskite memory devices achieve a high ON/OFF ratio up to 10⁸ with a relatively low operation voltage, a large endurance, and long retention times. The high‐yield device fabrication based on the solution‐process demonstrated here will be a step toward achieving low‐cost and high‐density practical perovskite memory devices.     

Enhancing the Performance of Perovskite Solar Cells by Hybridizing SnS Quantum Dots with CH3NH3PbI3

The combination of perovskite solar cells and quantum dot solar cells has significant potential due to the complementary nature of the two constituent materials. In this study, solar cells (SCs) with a hybrid CH₃NH₃PbI₃/SnS quantum dots (QDs) absorber layer are fabricated by a facile and universal in situ crystallization method, enabling easy embedding of the QDs in perovskite layer. Compared with SCs based on CH₃NH₃PbI₃, SCs using CH₃NH₃PbI₃/SnS QDs hybrid films as absorber achieves a 25% enhancement in efficiency, giving rise to an efficiency of 16.8%. The performance improvement can be attributed to the improved crystallinity of the absorber, enhanced photo‐induced carriers' separation and transport within the absorber layer, and improved incident light utilization. The generality of the methods used in this work paves a universal pathway for preparing other perovskite/QDs hybrid materials and the synthesis of entire nontoxic perovskite/QDs hybrid structure.     

Independent Memcapacitive Switching Triggered by Bromide Ion Migration for Quaternary Information Storage

Memcapacitors are emerging as an attractive candidate for high‐density information storage due to their multilevel and adjustable capacitances and long‐term retention without a power supply. However, knowledge of their memcapacitive mechanism remains unclear and accounts for the limited implementation of memcapacitors for multilevel memory technologies. Here, repeatable and reproducible quaternary memories fabricated from hybrid perovskite (CH₃NH₃SnBr₃) memcapacitors are reported. The device can be modulated to at least four capacitive states ranging from 0 to 169 pF with retention for 10⁴ s. Impressively, an effective device yield approaching 100% for quaternary memory switching is achieved by a batch of devices; each state has a sufficiently narrow distribution that can be distinguished from the others and is superior to most multilevel memories that have a low device yield as well as an overlapping distribution of states. The memcapacitive switching stems from the modulated p–i–n junction capacitance triggered by Br^? migration, as demonstrated by in situ element mapping, X‐ray photoelectron spectra, and frequency‐dependent capacitance measurements; this mechanism is different from the widely reported memristive switching involving filamentary conduction. The results provide a new way to produce high‐density information storage through memcapacitors.     

Photostriction of CH3NH3PbBr3 Perovskite Crystals

Organic–inorganic hybrid perovskite materials exhibit a variety of physical properties. Pronounced coupling between phonon, organic cations, and the inorganic framework suggest that these materials exhibit strong light–matter interactions. The photoinduced strain of CH₃NH₃PbBr₃ is investigated using high‐resolution and contactless in situ Raman spectroscopy. Under illumination, the material exhibits large blue shifts in its Raman spectra that indicate significant structural deformations (i.e., photostriction). From these shifts, the photostrictive coefficient of CH₃NH₃PbBr₃ is calculated as 2.08 × 10^?8 m² W^?1 at room temperature under visible light illumination. The significant photostriction of CH₃NH₃PbBr₃ is attributed to a combination of the photovoltaic effect and translational symmetry loss of the molecular configuration via strong translation–rotation coupling. Unlike CH₃NH₃PbI₃, it is noted that the photostriction of CH₃NH₃PbBr₃ is extremely stable, demonstrating no signs of optical decay for at least 30 d. These results suggest the potential of CH₃NH₃PbBr₃ for applications in next‐generation optical micro‐electromechanical devices.     

Controlling Nucleation and Growth of Metal Halide Perovskite Thin Films for High‐Efficiency Perovskite Solar Cells

Metal halide perovskite thin films can be crystallized via a broad range of solution‐based routes. However, the quality of the final films is strongly dependent upon small changes in solution composition and processing parameters. Here, this study demonstrates that a fractional substitution of PbCl₂ with PbI₂ in the 3CH₃NH₃I:PbCl₂ mixed‐halide starting solution has a profound influence upon the ensuing thin‐film crystallization. The presence of PbI₂ in the precursor induces a uniform distribution of regular quadrilateral‐shaped CH₃NH₃PbI₃ perovskite crystals in as‐cast films, which subsequently grow to form pinhole‐free perovskite films with highly crystalline domains. With this new formulation of 3CH₃NH₃I:0.98PbCl₂:0.02PbI₂, this study achieves a 19.1% current–voltage measured power conversion efficiency and a 17.2% stabilized power output in regular planar heterojunction solar cells.     

Recombination Dynamics Study on Nanostructured Perovskite Light‐Emitting Devices

The field of organic–inorganic hybrid perovskite light‐emitting diodes (PeLEDs) has developed rapidly in recent years. Although the performance of PeLEDs continues to improve through film quality control and device optimization, little research has been dedicated to understanding the recombination dynamics in perovskite thin films. Likewise, little has been done to investigate the effects of recombination dynamics on the overall light‐emitting behavior of PeLEDs. Therefore, this study investigates the recombination dynamics of CH₃NH₃PbI₃ thin films with differing crystal sizes by measurement of fluence‐dependent transient absorption dynamics and time‐resolved photoluminescence. The aim is to find out the link between recombination dynamics and device behavior in PeLEDs. It is found that bimolecular and Auger recombination become more efficient as the crystal size decreases and monomolecular recombination rate is affected by the trap density of perovskite. By defining the radiative efficiency Φ(n), which relates to the monomolecular, bimolecular, and Auger recombination, the fundamental recombination properties of CH₃NH₃PbI₃ films are discerned in quantitative terms. These findings help us to understand the light emission behavior of PeLEDs. This study takes an important step toward establishing the relationship between film structure, recombination dynamics, and device behavior for PeLEDs, thereby providing useful insights toward the design of better perovskite devices.     

SrCl2 Derived Perovskite Facilitating a High Efficiency of 16% in Hole‐Conductor‐Free Fully Printable Mesoscopic Perovskite Solar Cells

Despite the breakthrough of over 22% power conversion efficiency demonstrated in organic–inorganic hybrid perovskite solar cells (PVSCs), critical concerns pertaining to the instability and toxicity still remain that may potentially hinder their commercialization. In this study, a new chemical approach using environmentally friendly strontium chloride (SrCl₂) as a precursor for perovskite preparation is demonstrated to result in enhanced device performance and stability of the derived hole‐conductor‐free printable mesoscopic PVSCs. The CH₃NH₃PbI₃ perovskite is chemically modified by introducing SrCl₂ in the precursor solution. The results from structural, elemental, and morphological analyses show that the incorporation of SrCl₂ affords the formation of CH₃NH₃PbI₃(SrCl₂)_x perovskites endowed with lower defect concentration and better pore filling in the derived mesoscopic PVSCs. The optimized compositional CH₃NH₃PbI₃(SrCl₂)_0.1 perovskite can substantially enhance the photovoltaic performance of the derived hole‐conductor‐free device to 15.9%, outperforming the value (13.0%) of the pristine CH₃NH₃PbI₃ device. More importantly, the stability of the device in ambient air under illumination is also improved.     

Interfacial Electron Transfer Barrier at Compact TiO2/CH3NH3PbI3 Heterojunction

Low‐temperature solution‐processed CH₃NH₃PbI₃ interfaced with TiO₂ has recently been demonstrated as a highly successful type‐II light harvesting heterojunction with ≈20% efficiency. Therefore, an efficient ultrafast photoexcited electron transfer from CH₃NH₃PbI₃ to TiO₂ is expected. However, by probing the photoexcited charge carrier dynamics in CH₃NH₃PbI₃/quartz, CH₃NH₃PbI₃/TiO₂ (compact), and CH₃NH₃PbI₃/PCBM in a comparative study, an electron transfer potential barrier between CH₃NH₃PbI₃ and the compact TiO₂ (prepared with the spray pyrolysis method) formed by surface states is uncovered. Consequently, the CH₃NH₃PbI₃ photoluminescence intensity and lifetime is enhanced when interfaced to compact TiO₂. The electron accumulation within CH₃NH₃PbI₃ needed to overcome this interfacial potential barrier results in the undesirable large current–voltage hysteresis observed for CH₃NH₃PbI₃/TiO₂ planar heterojunctions. The findings in this study indicate that careful surface engineering to reduce this potential barrier is key to pushing perovskite solar cell efficiencies toward the theoretical limit.     

Structural and Chemical Changes to CH3NH3PbI3 Induced by Electron and Gallium Ion Beams

Organic–inorganic hybrid perovskites, such as CH₃NH₃PbI_3, have shown highly promising photovoltaic performance. Electron microscopy (EM) is a powerful tool for studying the crystallography, morphology, interfaces, lattice defects, composition, and charge carrier collection and recombination properties at the nanoscale. Here, the sensitivity of CH₃NH₃PbI₃ to electron beam irradiation is examined. CH₃NH₃PbI₃ undergoes continuous structural and compositional changes with increasing electron dose, with the total dose, rather than dose rate, being the key operative parameter. Importantly, the first structural change is subtle and easily missed and occurs after an electron dose significantly smaller than that typically applied in conventional EM techniques. The electron dose conditions under which these structural changes occur are identified. With appropriate dose‐minimization techniques, electron diffraction patterns can be obtained from pristine material consistent with the tetragonal CH₃NH₃PbI₃ phases determined by X‐ray diffraction. Radiation damage incurred at liquid nitrogen temperatures and using Ga⁺ irradiation in a focused ion beam instrument are also examined. Finally, some simple guidelines for how to minimize electron‐beam‐induced artifacts when using EM to study hybrid perovskite materials are provided.     

Hysteresis‐Free 1D Network Mixed Halide‐Perovskite Semitransparent Solar Cells

The morphology of hybrid organic–inorganic perovskite films is known to strongly affect the performance of perovskite‐based solar cells. CH₃NH₃PbI_3‐xCl_x (MAPbI_3‐xCl_x) films have been previously fabricated with 100% surface coverage in glove boxes. In ambient air, fabrication generally relies on solvent engineering to obtain compact films. In contrast, this work explores the potential of altering the perovskites microstructure for solar cell engineering. This work starts with CH₃NH₃PbI_3‐xCl_x, films with grain morphology carefully controlled by varying the deposition speed during the spin‐coating process to fabricate efficient and partially transparent solar cells. Devices produced with a CH₃NH₃PbI_3‐xCl_x film and a compact thick top gold electrode reach a maximum efficiency of 10.2% but display a large photocurrent hysteresis. As it is demonstrated, the introduction of different concentrations of bromide in the precursor solution addresses the hysteresis issues and turns the film morphology into a partially transparent interconnected network of 1D microstructures. This approach leads to semitransparent solar cells with negligible hysteresis and efficiencies up to 7.2%, while allowing average transmission of 17% across the visible spectrum. This work demonstrates that the optimization of the perovskites composition can mitigate the hysteresis effects commonly attributed to the charge trapping within the perovskite film.     

Amino‐Acid‐Induced Preferential Orientation of Perovskite Crystals for Enhancing Interfacial Charge Transfer and Photovoltaic Performance

Interfacial engineering of perovskite solar cells (PSCs) is attracting intensive attention owing to the charge transfer efficiency at an interface, which greatly influences the photovoltaic performance. This study demonstrates the modification of a TiO₂ electron‐transporting layer with various amino acids, which affects charge transfer efficiency at the TiO₂/CH₃NH₃PbI₃ interface in PSC, among which the l ‐alanine‐modified cell exhibits the best power conversion efficiency with 30% enhancement. This study also shows that the (110) plane of perovskite crystallites tends to align in the direction perpendicular to the amino‐acid‐modified TiO₂ as observed in grazing‐incidence wide‐angle X‐ray scattering of thin CH₃NH₃PbI₃ perovskite film. Electrochemical impedance spectroscopy reveals less charge transfer resistance at the TiO₂/CH₃NH₃PbI₃ interface after being modified with amino acids, which is also supported by the lower intensity of steady‐state photoluminescence (PL) and the reduced PL lifetime of perovskite. In addition, based on the PL measurement with excitation from different side of the sample, amino‐acid‐modified samples show less surface trapping effect compared to the sample without modification, which may also facilitate charge transfer efficiency at the interface. The results suggest that appropriate orientation of perovskite crystallites at the interface and trap‐passivation are the niche for better photovoltaic performance.     

A Strategy to Produce High Efficiency,High Stability Perovskite Solar Cells Using Functionalized Ionic Liquid‐Dopants

Functionalized imidazolium iodide salts (ionic liquids) modified with ? CH₂? CH?CH₂, ? CH₂C?CH, or ? CH₂C?N groups are applied as dopants in the synthesis of CH₃NH₃PbI₃‐type perovskites together with a fumigation step. Notably, a solar cell device prepared from the perovskite film doped with the salt containing the ? CH₂? CH?CH₂ side‐chain has a power conversion efficiency of 19.21%, which is the highest efficiency reported for perovskite solar cells involving a fumigation step. However, doping with the imidazolium salts with the ? CH₂C?CH and ? CH₂C?N groups result in perovskite layers that lead to solar cell devices with similar or lower power conversion efficiencies than the dopant‐free cell.     

Fluorinated 2D Lead Iodide Perovskite Ferroelectrics

Hybrid perovskite materials are famous for their great application potential in photovoltaics and optoelectronics. Among them, lead‐iodide‐based perovskites receive great attention because of their good optical absorption ability and excellent electrical transport properties. Although many believe the ferroelectric photovoltaic effect (FEPV) plays a crucial role for the high conversion efficiency, the ferroelectricity in CH₃NH₃PbI₃ is still under debate, and obtaining ferroelectric lead iodide perovskites is still challenging. In order to avoid the randomness and blindness in the conventional method of searching for perovskite ferroelectrics, a design strategy of fluorine modification is developed. As a demonstration, a nonpolar lead iodide perovskite is modified and a new 2D fluorinated layered hybrid perovskite material of (4,4‐difluorocyclohexylammonium)₂PbI₄, 1 , is obtained, which possesses clear ferroelectricity with controllable spontaneous polarization. The direct bandgap of 2.38 eV with strong photoluminescence also guarantees the direct observation of polarization‐induced FEPV. More importantly, the 2D structure and fluorination are also expected to achieve both good stability and charge transport properties. 1 is not only a 2D fluorinated lead iodide perovskite with confirmed ferroelectricity, but also a great platform for studying the effect of ferroelectricity and FEPV in the context of lead halide perovskite solar cells and other optoelectronic applications.     

Electrical Stress Influences the Efficiency of CH3NH3PbI3 Perovskite Light Emitting Devices

Organic–inorganic hybrid perovskite materials are emerging as semiconductors with potential application in optoelectronic devices. In particular, perovskites are very promising for light‐emitting devices (LEDs) due to their high color purity, low nonradiative recombination rates, and tunable bandgap. Here, using pure CH₃NH₃PbI₃ perovskite LEDs with an external quantum efficiency (EQE) of 5.9% as a platform, it is shown that electrical stress can influence device performance significantly, increasing the EQE from an initial 5.9% to as high as 7.4%. Consistent with the enhanced device performance, both the steady‐state photoluminescence (PL) intensity and the time‐resolved PL decay lifetime increase after electrical stress, indicating a reduction in nonradiative recombination in the perovskite film. By investigating the temperature‐dependent characteristics of the perovskite LEDs and the cross‐sectional elemental depth profile, it is proposed that trap reduction and resulting device‐performance enhancement is due to local ionic motion of excess ions, likely excess mobile iodide, in the perovskite film that fills vacancies and reduces interstitial defects. On the other hand, it is found that overstressed LEDs show irreversibly degraded device performance, possibly because ions initially on the perovskite lattice are displaced during extended electrical stress and create defects such as vacancies.     

Indium‐Free Perovskite Solar Cells Enabled by Impermeable Tin‐Oxide Electron Extraction Layers

Corrosive precursors used for the preparation of organic–inorganic hybrid perovskite photoactive layers prevent the application of ultrathin metal layers as semitransparent bottom electrodes in perovskite solar cells (PVSCs). This study introduces tin‐oxide (SnO_x) grown by atomic layer deposition (ALD), whose outstanding permeation barrier properties enable the design of an indium‐tin‐oxide (ITO)‐free semitransparent bottom electrode (SnO_x/Ag or Cu/SnO_x), in which the metal is efficiently protected against corrosion. Simultaneously, SnO_x functions as an electron extraction layer. We unravel the spontaneous formation of a PbI₂ interfacial layer between SnO_x and the CH₃NH₃PbI₃ perovskite. An interface dipole between SnO_x and this PbI₂ layer is found, which depends on the oxidant (water, ozone, or oxygen plasma) used for the ALD growth of SnO_x. An electron extraction barrier between perovskite and PbI₂ is identified, which is the lowest in devices based on SnO_x grown with ozone. The resulting PVSCs are hysteresis‐free with a stable power conversion efficiency (PCE) of 15.3% and a remarkably high open circuit voltage of 1.17 V. The ITO‐free analogues still achieve a high PCE of 11%.