Progress in Piezo‐Phototronic‐Effect‐Enhanced Light‐Emitting Diodes and Pressure Imaging

Wurtzite materials exhibit both semiconductor and piezoelectric properties under strains due to the non‐central symmetric crystal structures. The three‐way coupling of semiconductor properties, piezoelectric polarization and optical excitation in ZnO, GaN, CdS and other piezoelectric semiconductors leads to the emerging field of piezo‐phototronics. This effect can efficiently manipulate the emission intensity of light‐emitting diodes (LEDs) by utilizing the piezo‐polarization charges created at the junction upon straining to modulate the energy band diagrams and the optoelectronic processes, such as generation, separation, recombination and/or transport of charge carriers. Starting from fundamental physics principles, recent progress in piezo‐phototronic‐effect‐enhanced LEDs is reviewed; following their development from single‐nanowire pressure‐sensitive devices to high‐resolution array matrices for pressure‐distribution mapping applications. The piezo‐phototronic effect provides a promising method to enhance the light emission of LEDs based on piezoelectric semiconductors through applying static strains, and may find perspective applications in various optoelectronic devices and integrated systems.     

Mixed Lead–Tin Halide Perovskites for Efficient and Wavelength‐Tunable Near‐Infrared Light‐Emitting Diodes

Near‐infrared (NIR) light‐emitting diodes (LEDs), with emission wavelengths between 800 and 950 nm, are useful for various applications, e.g., night‐vision devices, optical communication, and medical treatments. Yet, devices using thin film materials like organic semiconductors and lead based colloidal quantum dots face certain fundamental challenges that limit the improvement of external quantum efficiency (EQE), making the search of alternative NIR emitters important for the community. In this work, efficient NIR LEDs with tunable emission from 850 to 950 nm, using lead–tin (Pb‐Sn) halide perovskite as emitters are demonstrated. The best performing device exhibits an EQE of 5.0% with a peak emission wavelength of 917 nm, a turn‐on voltage of 1.65 V, and a radiance of 2.7 W Sr^?1 m^?2 when driven at 4.5 V. The emission spectra of mixed Pb‐Sn perovskites are tuned either by changing the Pb:Sn ratio or by incorporating bromide, and notably exhibit no phase separation during device operation. The work demonstrates that mixed Pb‐Sn perovskites are promising next generation NIR emitters.     

CdS@SiO2 Core–Shell Electroluminescent Nanorod Arrays Based on a Metal–Insulator–Semiconductor Structure

Enormous advancement has been achieved in the field of one‐dimensional (1D) semiconductor light‐emitting devices (LEDs), however, LEDs based on 1D CdS nanostructures have been rarely reported. The fabrication of CdS@SiO₂ core–shell nanorod array LEDs based on a Au–SiO₂–CdS metal–insulator–semiconductor (MIS) structure is presented. The MIS LEDs exhibit strong yellow emission with a low threshold voltage of 2.7 V. Electroluminescence with a broad emission ranging from 450 nm to 800 nm and a shoulder peak at 700 nm is observed, which is related to the defects and surface states of the CdS nanorods. The influence of the SiO₂ shell thickness on the electroluminescence intensity is systematically investigated. The devices have a high light‐emitting spatial resolution of 1.5 μm and maintain an excellent emission property even after shelving at room temperature for at least three months. Moreover, the fabrication process is simple and cost effective and the MIS device could be fabricated on a flexible substrate, which holds great potential for application as a flexible light source. This prototype is expected to open up a new route towards the development of large‐scale light‐emitting devices with excellent attributes, such as high resolution, low cost, and good stability.     

Origin of Sub‐Bandgap Electroluminescence in Organic Light‐Emitting Diodes

Sub‐bandgap electroluminescence in organic light emitting diodes is a phenomenon in which the electroluminescence turn‐on voltage is lower than the bandgap voltage of the emitter. Based on the results of transient electroluminescence (EL) and photoluminescence and electroabsorption spectroscopy measurements, it is concluded that in rubrene/C₆₀ devices, charge transfer excitons are generated at the rubrene/C₆₀ interface under sub‐bandgap driving conditions, leading to the formation of triplet excitons, and sub‐bandgap EL is the result of the subsequent triplet–triplet annihilation process.     

Homogeneous 2D MoTe2 p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced Doping

Recently, α‐MoTe₂, a 2D transition‐metal dichalcogenide (TMD), has shown outstanding properties, aiming at future electronic devices. Such TMD structures without surface dangling bonds make the 2D α‐MoTe₂ a more favorable candidate than conventional 3D Si on the scale of a few nanometers. The bandgap of thin α‐MoTe₂ appears close to that of Si and is quite smaller than those of other typical TMD semiconductors. Even though there have been a few attempts to control the charge‐carrier polarity of MoTe₂, functional devices such as p–n junction or complementary metal–oxide–semiconductor (CMOS) inverters have not been reported. Here, we demonstrate a 2D CMOS inverter and p–n junction diode in a single α‐MoTe₂ nanosheet by a straightforward selective doping technique. In a single α‐MoTe₂ flake, an initially p‐doped channel is selectively converted to an n‐doped region with high electron mobility of 18 cm² V^?1 s^?1 by atomic‐layer‐deposition‐induced H‐doping. The ultrathin CMOS inverter exhibits a high DC voltage gain of 29, an AC gain of 18 at 1 kHz, and a low static power consumption of a few nanowatts. The results show a great potential of α‐MoTe₂ for future electronic devices based on 2D semiconducting materials.     

Realization of In‐Plane p–n Junctions with Continuous Lattice of a Homogeneous Material

Two‐dimensional (2D) in‐plane p–n junctions with a continuous interface have great potential in next‐generation devices. To date, the general fabrication strategies rely on lateral epitaxial growth of p‐ and n‐type 2D semiconductors. An in‐plane p–n junction is fabricated with homogeneous monolayer Te at the step edge on graphene/6H‐SiC(0001). Scanning tunneling spectroscopy reveals that Te on the terrace of trilayer graphene is p‐type, and it is n‐type on monolayer graphene. Atomic‐resolution images demonstrate the continuous lattice of the junction, and mappings of the electronic states visualize the type‐II band bending across the space‐charge region of 6.2 nm with a build‐in field of 4 × 10⁵ V cm^?1. The reported strategy can be extended to other 2D semiconductors on patternable substrates for designed fabrication of in‐plane junctions.     

Monolayer Transition Metal Dichalcogenides as Light Sources

Reducing the dimensions of materials is one of the key approaches to discovering novel optical phenomena. The recent emergence of 2D transition metal dichalcogenides (TMDCs) has provided a promising platform for exploring new optoelectronic device applications, with their tunable electronic properties, structural controllability, and unique spin valley–coupled systems. This progress report provides an overview of recent advances in TMDC‐based light‐emitting devices discussed from several aspects in terms of device concepts, material designs, device fabrication, and their diverse functionalities. First, the advantages of TMDCs used in light‐emitting devices and their possible functionalities are presented. Second, conventional approaches for fabricating TMDC light‐emitting devices are emphasized, followed by introducing a newly established, versatile method for generating light emission in TMDCs. Third, current growing technologies for heterostructure fabrication, in which distinct TMDCs are vertically stacked or laterally stitched, are explained as a possible means for designing high‐performance light‐emitting devices. Finally, utilizing the topological features of TMDCs, the challenges for controlling circularly polarized light emission and its device applications are discussed from both theoretical and experimental points of view.     

Eu3+, Sm3+ Deep‐Red Phosphors as Novel Materials for White Light‐Emitting Diodes and Simultaneous Performance Enhancement of Organic–Inorganic Perovskite Solar Cells

The luminous efficiency of inorganic white light‐emitting diodes, to be used by the next generation as light initiators, is continuously progressing and is an emerging interest for researchers. However, low color‐rendering index (Ra), high correlated color temperature (CCT), and poor stability limit its wider application. Herein, it is reported that Sm³⁺‐ and Eu³⁺‐doped calcium scandate (CaSc₂O₄ (CSO)) are an emerging deep‐red‐emitting material with promising light absorption, enhanced emission properties, and excellent thermal stability that make it a promising candidate with potential applications in emission display, solid‐state white lighting, and the device performance of perovskite solar cells (PSCs). The average crystal structures of Sm³⁺‐doped CSO are studied by synchrotron X‐ray data that correspond to an extremely rigid host structure. Samarium ion is incorporated as a sensitizer that enhances the emission intensity up to 30%, with a high color purity of 88.9% with a 6% increment. The impacts of hosting the sensitizer are studied by quantifying the lifetime curves. The CaSc₂O₄:0.15Eu³⁺,0.03Sm³⁺ phosphor offers significant resistance to thermal quenching. The incorporation of lanthanide ion‐doped phosphors CSOE into PSCs is investigated along with their potential applications. The CSOE‐coated PSCs devices exhibit a high current density and a high power conversion efficiency (15.96%) when compared to the uncoated control devices.     

From One‐ to Three‐Dimensional Organic Semiconductors: In Search of the Organic Silicon?

Organic semiconductors based on π‐conjugated systems are the focus of considerable interest in the emerging area of soft or flexible photonics and electronics. Whereas in recent years the performances of devices such as organic light‐emitting diodes (OLEDs), organic field‐effect transistors (OFETs), or solar cells have undergone considerable progress, a number of technical and fundamental problems related to the low dimensionality of organic semiconductors based on linear π‐conjugated systems remain unsatisfactorily resolved. This low dimensionality results in an anisotropy of the optical and charge‐transport properties, which in turn implies a control of the material organization/molecular orientation during or after device fabrication. Such a constraint evidently represents a problem when device fabrication by solution‐based processes, such as printing techniques, is envisioned. The aim of this short Review is to illustrate possible alternative strategies based on the development of organic semiconductors with higher dimensionality, capable to exhibit isotropic electronic properties.     

Electrical Stress Influences the Efficiency of CH3NH3PbI3 Perovskite Light Emitting Devices

Organic–inorganic hybrid perovskite materials are emerging as semiconductors with potential application in optoelectronic devices. In particular, perovskites are very promising for light‐emitting devices (LEDs) due to their high color purity, low nonradiative recombination rates, and tunable bandgap. Here, using pure CH₃NH₃PbI₃ perovskite LEDs with an external quantum efficiency (EQE) of 5.9% as a platform, it is shown that electrical stress can influence device performance significantly, increasing the EQE from an initial 5.9% to as high as 7.4%. Consistent with the enhanced device performance, both the steady‐state photoluminescence (PL) intensity and the time‐resolved PL decay lifetime increase after electrical stress, indicating a reduction in nonradiative recombination in the perovskite film. By investigating the temperature‐dependent characteristics of the perovskite LEDs and the cross‐sectional elemental depth profile, it is proposed that trap reduction and resulting device‐performance enhancement is due to local ionic motion of excess ions, likely excess mobile iodide, in the perovskite film that fills vacancies and reduces interstitial defects. On the other hand, it is found that overstressed LEDs show irreversibly degraded device performance, possibly because ions initially on the perovskite lattice are displaced during extended electrical stress and create defects such as vacancies.     

Homogeneous 2D MoTe2 CMOS Inverters and p–n Junctions Formed by Laser‐Irradiation‐Induced p‐Type Doping

Among all typical transition‐metal dichalcogenides (TMDs), the bandgap of α‐MoTe₂ is smallest and is close to that of conventional 3D Si. The properties of α‐MoTe₂ make it a favorable candidate for future electronic devices. Even though there are a few reports regarding fabrication of complementary metal–oxide‐semiconductor (CMOS) inverters or p–n junction by controlling the charge‐carrier polarity of TMDs, the fabrication process is complicated. Here, a straightforward selective doping technique is demonstrated to fabricate a 2D p–n junction diode and CMOS inverter on a single α‐MoTe₂ nanoflake. The n‐doped channel of a single α‐MoTe₂ nanoflake is selectively converted to a p‐doped region via laser‐irradiation‐induced MoO_x doping. The homogeneous 2D MoTe₂ CMOS inverter has a high DC voltage gain of 28, desirable noise margin (NM_H = 0.52 V_DD, NM_L = 0.40 V_DD), and an AC gain of 4 at 10 kHz. The results show that the doping technique by laser scan can be potentially used for future larger‐scale MoTe₂ CMOS circuits.     

High‐Quality Ruddlesden–Popper Perovskite Films Based on In Situ Formed Organic Spacer Cations

Ruddlesden–Popper perovskites (RPPs), consisting of alternating organic spacer layers and inorganic layers, have emerged as a promising alternative to 3D perovskites for both photovoltaic and light‐emitting applications. The organic spacer layers provide a wide range of new possibilities to tune the properties and even provide new functionalities for RPPs. However, the preparation of state‐of‐the‐art RPPs requires organic ammonium halides as the starting materials, which need to be ex situ synthesized. A novel approach to prepare high‐quality RPP films through in situ formation of organic spacer cations from amines is presented. Compared with control devices fabricated from organic ammonium halides, this new approach results in similar (and even better) device performance for both solar cells and light‐emitting diodes. High‐quality RPP films are fabricated based on different types of amines, demonstrating the universality of the approach. This approach not only represents a new pathway to fabricate efficient devices based on RPPs, but also provides an effective method to screen new organic spacers with further improved performance.     

Inorganic Nano Light‐Emitting Transistor: p‐Type Porous Silicon Nanowire/n‐Type ZnO Nanofilm

An inorganic nano light‐emitting transistor (INLET) consisting of p‐type porous Si nanowires (PoSiNWs) and an n‐type ZnO nanofilm was integrated on a heavily doped p‐type Si substrate with a thermally grown SiO₂ layer. To verify that modulation of the Fermi level of the PoSiNWs is key for switchable light emitting, I–V and electroluminescent characteristics of the INLET are investigated as a function of gate bias (V _g). As the V _g is changed from 0 V to ?20 V, the current level and light‐emission intensity in the orange–red range increase by three and two times, respectively, with a forward bias of 20 V in the p–n junction, compared to those at a V _g of 0 V. On the other hand, as the V _g approaches 10 V, the current level decreases and the emission intensity is reduced and then finally switched off. This result arises from the modulation of the Fermi level of the PoSiNWs and the built‐in potential at the p–n junction by the applied gate electric field.     

Improved Outcoupling Efficiency and Stability of Perovskite Light‐Emitting Diodes using Thin Emitting Layers

Hybrid organic–inorganic perovskite semiconductors have shown potential to develop into a new generation of light‐emitting diode (LED) technology. Herein, an important design principle for perovskite LEDs is elucidated regarding optimal perovskite thickness. Adopting a thin perovskite layer in the range of 35–40 nm is shown to be critical for both device efficiency and stability improvements. Maximum external quantum efficiencies (EQEs) of 17.6% for Cs_0.2FA_0.8PbI_2.8Br_0.2, 14.3% for CH₃NH₃PbI₃ (MAPbI₃), 10.1% for formamidinium lead iodide (FAPbI₃), and 11.3% for formamidinium lead bromide (FAPbBr₃)‐based LEDs are demonstrated with optimized perovskite layer thickness. Optical simulations show that the improved EQEs source from improved light outcoupling. Furthermore, elevated device temperature caused by Joule heating is shown as an important factor contributing to device degradation, and that thin perovskite emitting layers maintain lower junction temperature during operation and thus demonstrate increased stability.     

Organic Light‐Emitting Transistors: Materials,Device Configurations,and Operations

Organic light‐emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field‐effect transistors (OFETs) and the light‐generation capability of organic light‐emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state‐of‐the‐art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source‐drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs.     

High‐Efficiency Single‐Component Organic Light‐Emitting Transistors

Construction of high‐performance organic light‐emitting transistors (OLETs) remains challenging due to the limited desired organic semiconductor materials. Here, two superior high mobility emissive organic semiconductors, 2,6‐diphenylanthracene (DPA) and 2,6‐di(2‐naphthyl) anthracene (dNaAnt), are introduced into the construction of OLETs. By optimizing the device geometry for balanced ambipolar efficient charge transport and using high‐quality DPA and dNaAnt single crystals as active layers, high‐efficiency single‐component OLETs are successfully fabricated, with the demonstration of strong and spatially controlled light emission within both p‐ and n‐ conducting channels and output of high external quantum efficiency (EQE). The obtained EQE values in current devices are approaching 1.61% for DPA‐OLETs and 1.75% for dNaAnt‐based OLETs, respectively, which are the highest EQE values for single‐component OLETs in the common device configuration reported so far. Moreover, high brightnesses of 1210 and 3180 cd m^?2 with current densities up to 1.3 and 8.4 kA cm^?2 are also achieved for DPA‐ and dNaAnt‐based OLETs, respectively. These results demonstrate the great potential applications of high mobility emissive organic semiconductors for next‐generation rapid development of high‐performance single‐component OLETs and their related organic integrated electro‐optical devices.     

Recombination Dynamics Study on Nanostructured Perovskite Light‐Emitting Devices

The field of organic–inorganic hybrid perovskite light‐emitting diodes (PeLEDs) has developed rapidly in recent years. Although the performance of PeLEDs continues to improve through film quality control and device optimization, little research has been dedicated to understanding the recombination dynamics in perovskite thin films. Likewise, little has been done to investigate the effects of recombination dynamics on the overall light‐emitting behavior of PeLEDs. Therefore, this study investigates the recombination dynamics of CH₃NH₃PbI₃ thin films with differing crystal sizes by measurement of fluence‐dependent transient absorption dynamics and time‐resolved photoluminescence. The aim is to find out the link between recombination dynamics and device behavior in PeLEDs. It is found that bimolecular and Auger recombination become more efficient as the crystal size decreases and monomolecular recombination rate is affected by the trap density of perovskite. By defining the radiative efficiency Φ(n), which relates to the monomolecular, bimolecular, and Auger recombination, the fundamental recombination properties of CH₃NH₃PbI₃ films are discerned in quantitative terms. These findings help us to understand the light emission behavior of PeLEDs. This study takes an important step toward establishing the relationship between film structure, recombination dynamics, and device behavior for PeLEDs, thereby providing useful insights toward the design of better perovskite devices.     

Inkjet Printed Bilayer Light‐Emitting Electrochemical Cells for Display and Lighting Applications

A new bilayer light‐emitting electrochemical cell (LEC) device, which allows well‐defined patterned light emission through an easily adjustable, mask‐free, and additive fabrication process, is reported. The bilayer stack comprises an inkjet‐printed lattice of micrometer‐sized electrolyte droplets, in a “filled” or “patterned” lattice configuration. On top of this, a thin layer of light‐emitting compound is deposited from solution. The light emission is demonstrated to originate from regions proximate to the interfaces between the inkjetted electrolyte, the light‐emitting compound, and one electrode, where bipolar electron/hole injection and electrochemical doping are facilitated by ion motion. By employing KCF₃SO₃ in poly(ethylene glycol) as the electrolyte, Super Yellow as the light‐emitting compound, and two air‐stabile electrodes, it is possible to realize filled lattice devices that feature uniform yellow–green light emission to the naked eye, and patterned lattice devices that deliver well‐defined and high‐contrast static messages with a pixel density of 170 PPI.     

Polar‐Electrode‐Bridged Electroluminescent Displays: 2D Sensors Remotely Communicating Optically

A novel geometry for electroluminescent devices, which does not require transparent electrodes for electrical input, is demonstrated, theoretically analyzed, and experimentally characterized. Instead of emitting light through a conventional electrode, light emission occurs through a polar liquid or solid and input electrical electrodes are coplanar, rather than stacked in a sandwich configuration. This new device concept is scalable and easily deployed for a range of modular alternating‐current‐powered electroluminescent light sources and light‐emitting sensing devices. The polar‐electrode‐bridged electroluminescent displays can be used as remotely readable, spatially responsive sensors that emit light in response to the accumulation and distribution of materials on the device surface. Using this device structure, various types of alternating current devices are demonstrated. These include an umbrella that automatically lights up when it rains, a display that emits light from regions touched by human fingers (or painted upon using a mixture of oil and water), and a sensor that lights up differently in different areas to indicate the presence of water and its freezing. This study extends the dual‐stack, coplanar‐electrode device geometry to provide displays that emit light from a figure drawn on an electroluminescent panel using a graphite pencil.     

A Strategy for Architecture Design of Crystalline Perovskite Light‐Emitting Diodes with High Performance

All present designs of perovskite light‐emitting diodes (PeLEDs) stem from polymer light‐emitting diodes (PLEDs) or perovskite solar cells. The optimal structure of PeLEDs can be predicted to differ from PLEDs due to the different fluorescence dynamics and crystallization between perovskite and polymer. Herein, a new design strategy and conception is introduced, “insulator–perovskite–insulator” (IPI) architecture tailored to PeLEDs. As examples of FAPbBr₃ and MAPbBr₃, it is experimentally shown that the IPI structure effectively induces charge carriers into perovskite crystals, blocks leakage currents via pinholes in the perovskite film, and avoids exciton quenching simultaneously. Consequently, as for FAPbBr₃, a 30‐fold enhancement in the current efficiency of IPI‐structured PeLEDs compared to a control device with poly(3,4ethylenedioxythiophene):poly(styrene sulfonate) as hole‐injection layer is achieved—from 0.64 to 20.3 cd A^?1—while the external quantum efficiency is increased from 0.174% to 5.53%. As the example of CsPbBr₃, compared with the control device, both current efficiency and lifetime of IPI‐structured PeLEDs are improved from 1.42 and 4 h to 9.86 cd A^?1 and 96 h. This IPI architecture represents a novel strategy for the design of light‐emitting didoes based on various perovskites with high efficiencies and stabilities.