噪声作为红外探测器可靠性评价的探讨

红外探测器的可靠性是一个重要的指标,当前利用噪声来表征器件的可靠性受到了广泛的关注.文分析了红外探测器的电噪声,它包括热噪声、散粒噪声、g-r噪声和1/f噪声,再结合g-r噪声和1/f噪声的产生,对噪声用作InSb光伏探测器可靠性的评价进行了详细分析.     

倍增型共振隧穿弱光探测器的噪声性能研究

对倍增型共振隧穿弱光探测器(RTDPD,resonant tunneling diode as photodetector)的噪声性能 进行研究。设计了具有倍增区的RTDPD结构。对探测器电流-电压(I-V) 特性的模拟发现,加入倍增区 以后探测器的光电流和暗电流均被放大,其峰值电流增大了1.7倍。 对RTDPD的噪声分布模拟发 现,1/f噪声比散粒噪声和热噪声高出10 个数量级左右。对倍增 区的电场强度和过剩噪声因子进行了模拟, 并计算了过剩噪声的功率谱密度。分析了倍增型RTDPD的总噪声,并对有、无倍增区时RTDPD 的噪声等 效功率进行了计算。结果显示,倍增区引入的噪声不仅不会影响探测器有效信号的提取,而 且提高了探测器响应弱光的能力。     

毫米波焦平面阵列的1/f噪声的小波处理方法

本文在概要介绍毫米波焦平面阵列成象探测器中存在的1/f噪声的特性的基础上,深入分析了小波变换与1/f噪声的关系,提出用小波分解的方法对毫米波焦平面探测器的1/f噪声进行去相关处理,推导了相应的表达式。仿真结果表明可得到满意的效果。     

毫米波焦平面阵列的1/f噪声的小波处理方法

文中在概要介绍毫米波焦平面阵列成象探测器中存在的1/f 噪声的特性的基础上,深入分析了小波变换与1/f 噪声的关系,提出用小波分解的方法对毫米波焦平面探测器的1/f 噪声进行去相关处理,推导了相应的表达式。仿真结果表明可得到满意的效果。     

小波分析在光纤陀螺分形噪声模拟中的应用

光纤陀螺随机误差的功率谱密度分别与频率的γ次方成反比,这类随机过程统称为1/fγ分形噪声,研究生成这类信号的方法对分析光纤陀螺的输出信号具有重要意义。分形噪声具有非平稳性、长程相关性、自相似性及1/fγ谱密度的特性,小波变换的多分辨分析是研究1/fγ噪声的良好工具。通过对高斯白噪声进行小波变换,再结合1/fγ噪声的方差特性,找到了满足1/fγ信号生成定理的各尺度正交小波系数,最后采用正交小波逆变换模拟出分形噪声,此方法可以产生任意噪声强度σ2、任意谱参数γ的1/fγ噪声。     

自对准双极晶体管中的低频噪声

报导了用多晶硅做发射极的自对准n-p-n双极晶体管的低频噪声的初步研究情况。其中一些管子显示出一般扩散结晶体管中观察到的1／f规律不同的过量噪声谱。并且发现噪声谱形成S(f)随样品而异。例如，我们在同一芯片上的两个相邻的管子上，就观察到两种不同的形式S(f)－1/f和S(f)－1[1|(f/f0)^2]。我们认为，后者是由于在多晶硅－单晶硅界面处的氧化层势垒中载流于俘获造成的。其不均匀性可以说明噪声谱变化范围很宽的原因。     

基于小波分析和虚拟仪器技术的1/f噪声研究

传统基于傅立叶分析和频谱分析仪的微弱信号检测方法无法对1／f噪声进行实时、高速、精确的测量与分析。本文在以虚拟仪器为平台。内嵌小波分析的低频噪声检测系统基础上对1／f噪声进行了实验和理论研究。实验结果表明,该系统能够检测到的1／f噪声幅值比传统的测试方法低2个数量,以小波理论构建的两个参量更深入细微地表征了1／f噪声特性：模极大值分布能够鉴别不同类型的1／f噪声产生机构,相似系数可描述应力对器件1／f噪声的影响。     

基于中波红外／长波红外双波段量子阱红外光电探测器的焦平面列阵

量子阱红外光电探测器由于具有光谱吸收窄、热分辨率好以及1／f噪声和固定图形噪声低等优点,特别适用于涉及几个大气透射波段的热成像应用。     

红外成像传感器1／f噪声的预测与补偿

分析了红外成像传感器1／f噪声的产生机理，提出了用混沌学的观点对红外成像传感器1／f噪声进行预测与补偿，降低噪声强度的新方法。利用该方法对实验数据进行处理，取得了较好的效果。     

光纤陀螺光电探测器状态开机自检方法研究

针对光纤陀螺(FOG)PIN光电探测器在空间应用环境下受辐照影响暗电流增大、性能指标劣化的特性,提出了FOG空间在轨条件下PIN光电探测器工作状态开机自检方法。陀螺开机时,调节光源驱动电流使光源处于无光输出状态,此时PIN光电探测器输出噪声中主要包括由暗电流引起的低频1/f噪声和散粒噪声,通过低通滤波和低噪声放大电路使对PIN光电控制器输出信号进行预处理;根据低频1/f噪声和散粒噪声功率谱密度的特点,使用Allan方差法对经A/D转换后的数据进行分析,得到不同噪声类型的强度信息。通过PIN光电探测器的γ射线辐照试验对该方法进行了验证,试验结果表明,该方法能够有效地表征PIN光电探测器在受辐照前后1/f噪声和散粒噪声的变化。     

1/f噪声功率谱的加权最小二乘法拟合

本文导出了用最小二乘法对1/f噪声功率谱进行曲线拟合的具体算法,提出了一种提高拟合精度的加权法,并与传统方法对比分析了拟合误差,用实际处理结果证明了加权法对1/f噪声功率谱低频部分的拟合质量有很大改善,能提高曲线拟合的整体效果.     

光电耦合器总剂量辐照的噪声表征

 本文在研究光电耦合器工作原理、辐照理论及1/f噪声理论的基础上,分析了光电耦合器辐照噪声产生机理及特性,建立了光电耦合器总剂量辐照损伤噪声模型.研究结果表明,随着辐照总剂量增强, LED及光敏管氧化层中引入的氧化层陷阱密度增多,载流子数涨落增强,从而使电压噪声功率谱密度增加.实验结果验证理论分析的正确性,电压噪声功率谱密度可作为光电耦合器辐照损伤表征参量.     

An analytical formulation of phase noise of signals with Gaussian-distributed jitter

The output of many oscillatory systems can be approximated by a stochastic square-wave signal with noise-free amplitude and Gaussian-distributed jitter. We present an analytical treatment of the phase noise of this signal with white and Lorentzian jitter spectra. With a white jitter spectrum, the phase noise is nearly Lorentzian around each harmonic. With a Lorentzian jitter spectrum, it is a sum of several Lorentzian spectra, a summation that has a 1/f/sup 4/ shape at far-out frequencies. With a combination of the two, it has 1/f/sup 4/ and 1/f/sup 2/ shapes at close-in and far-out frequencies, respectively. In all cases, the phase noise at the center frequency and the total signal power are both finite. These findings will improve our understanding of phase noise and will facilitate the calculation of phase noise using time- domain jitter analysis.     

金属/半导体接触孔噪声特性研究

通过对1μm金属/半导体接触孔链样品施加高应力的加速寿命试验和室温下的噪声频谱测量,得到了1/f噪声、10Hz点频功率谱特征及其变化规律.实验中发现应力前后1/f噪声10Hz点频功率谱有明显的变化.对比实验中电阻和噪声的变化,噪声变化量是电阻变化量的1304倍.1/f噪声可以作为金属/半导体接触孔可靠性的灵敏表征参量.     

A Time-Variant Analysis of Fundamental $1/f^{3}$ Phase Noise in CMOS Parallel $LC$ -Tank Quadrature Oscillators

This paper presents a rigorous time-variant analysis of the 1/f MOS device noise upconversion into 1/f phase noise for two of the most popular parallel-coupled quadrature CMOS harmonic oscillators. Simple closed-form equations for the fundamental 1/f ³ phase-noise spectrum are derived and validated through SpectreRF simulations, proving that the two topologies display remarkably different sensitivities to the low-frequency noise sources. Based on the developed analysis, useful general design insights are also presented.     

1/f phase noise in quartz s.a.w. devices

It has been observed that s.a.w. delay lines made on ST-cut quartz are the major source of 1/f noise in s.a.w. controlled oscillators. However, with proper treatment of the quartz surface, the 1/f noise can be significantly reduced. A modified expression for calculating the single-sideband f.m. noise power spectrum of s.a.w. oscillators is presented.     

Low-frequency noise in near-fully-depleted TFSOI MOSFETs

Low-frequency (1/f) noise in near-fully-depleted Thin-Film Silicon-On-Insulator (TFSOI) CMOS transistors designed for sub-l-V applications is investigated in the subthreshold region, linear region, and saturation region of operation for the first time. The noise in these surface-channel devices is composed of a bias invariant 1/f component and a bias dependent generation-recombination (G/R) component that becomes enhanced in the subthreshold region of operation for both n- and p-channel MOSFETs. Results presented in this letter are consistent with the noise being dominated by a number fluctuation model. These results demonstrate that the bias independent 1/f noise spectrum of the n-channel TFSOI MOSFET is comparable to the 1/f noise level found in conventional bulk silicon submicron CMOS fabrication processes     

1/f noise synthesis model in discrete-time for circuit simulation

Flicker noise, popularly known as 1/f noise is a commonly observed phenomenon in semiconductor devices. To incorporate 1/f noise in circuit simulations, models are required to synthesize such noise in discrete time. This paper proposes a model based on the fact that 1/f processes belong to the class of statistically self-similar random processes. The model generates 1/f noise in the time domain (TD) with a simple white noise input and is parameterized by a quantity whose value can be adjusted to reflect the desired 1/f parameter, that is, the slope of the 1/f spectrum. It thus differs from most of the earlier modeling approaches, which were confined to the spectral domain. To verify fit between the model and actual 1/f noise measurements, experiments were conducted using discrete devices such as a PIN photodiode at various bias conditions and sampling frequencies. The noise synthesized by the model was found to provide a good match to the measurements. Furthermore, it is demonstrated that the proposed 1/f noise model can also be incorporated in circuit simulations as a noise current or noise voltage source, which was not feasible earlier with the conventional spectral domain representation. To validate the inclusion of 1/f noise in circuits as TD current or voltage, simulations were carried out on a CMOS ring oscillator and the clock jitter due to 1/f noise was investigated.     

1/f噪声的统计动力学分析

从理论分析的角度,得出结论:1/f噪声拥有一定的能谱.得到了一个普适的公式,扩展了1/f噪声理论的应用范围.