深亚微米抗辐射加固设计的SPICE仿真验证方法

由于在抗辐射加固设计(RHBD)中采用了环形栅的版图结构,由此引发了直栅SPICE仿真验证方法对RHBD不适用的问题.通过分析深亚微米工艺技术下环形栅结构的特性,建立了环形栅的有效栅宽长比算法,同时构建了环形栅的SPICE仿真模型,并针对抗辐射加固设计提出了如何有效地提取版图参数网表的策略,从而解决了传统SPICE仿真验证对RHBD不适用的问题,通过有效的仿真验证,确保电路性能,提高设计的可靠性.     

环栅结构CMOS/SOI器件SPICE模型研究

建立了环栅结构的CMOS/SOI器件的SPICE模型,可以对抗辐照设计中环栅结构的CMOS/SOI器件计算其等效宽长比,将环栅器件转换为等效宽度和长度的条栅器件;以及对体接触电阻等其他受影响的SPICE模型参数做出调整,使其电学特性模拟达到最准确精度.模拟数据和试验数据具有很好的一致性,证明所建立的模型具有较高的精度.     

深亚微米pMOS器件HCI退化建模与仿真方法

研究了深亚微米pMOS器件HCI(hot carrier injeotion)退化模型.采用流函数分析方法提出一种时变栅电流物理描述,基于这一栅电流模型改进了pMOS器件的HCI退化模型,并在该模型基础上提出一种HCI退化可靠性仿真方法,用于对静态应力条件下器件的HCI退化程度进行预测.最后给出了仿真结果对比.该方法已被用于XDRT可靠性工具中进行器件HCI退化分析.     

深亚微米pMOS器件HCI退化建模与仿真方法

研究了深亚微米pMOS器件HCI(hot carrier injeotion)退化模型.采用流函数分析方法提出一种时变栅电流物理描述,基于这一栅电流模型改进了pMOS器件的HCI退化模型,并在该模型基础上提出一种HCI退化可靠性仿真方法,用于对静态应力条件下器件的HCI退化程度进行预测.最后给出了仿真结果对比.该方法已被用于XDRT可靠性工具中进行器件HCI退化分析.     

版图设计对多指AlGaN/GaN HEMTs 栅指温度影响的研究

本文利用三维热仿真方法研究了不同版图设计对多指AlGaN/GaN 高电子迁移率器件工作温度的影响。我们使用拉曼微区测温技术测量了样品的沟道温度,并用于确定材料的热导率,验证器件热模型的准确性。建立模型时特别考虑了界面热阻的作用,确保器件温度分布的仿真结果与实验测量结果一致。文中采用包含界面热阻效应的三维热模型,系统的分析了栅指数目,器件栅宽和栅栅间距等因素对AlGaN/GaN 高电子迁移率晶体管热特性的影响。最后,提出了一种优化器件栅指间距的热设计方法,能够有效降低器件工作时的最高温度。     

非均匀指间距MOSFET弱雪崩效应考察和建模

本文对RF CMOS工艺下非均匀栅间距版图结构弱雪崩行为进行了考察。和均匀栅间距多指结构相比,采用非均匀栅间距器件漏源击穿电压有近8.5%左右和近20%的热相关漏电导特性的改善。提出了一种新颖的器件有源区总面积相关的紧凑模型用于精确预见漏击穿行为。器件总面积处理为和栅指间距相关。该模型精确预见了一组同时有均匀和非均匀栅间距nMOSFET的弱雪崩行为,仿真和测试结果的良好拟合度验证和证实了提出模型的精度。     

高频硅基光电晶体管SPICE模型的建立及关键参数的提取

硅基光电晶体管在高频通信、自动控制、电力系统领域具有广泛的应用前景.从系统验证和仿真的角度,迫切需要建立光电晶体管的等效电路模型,该模型需要包含电学特性和光学特性.本文提出了一种高频(100MHz～1GHz)硅基光电晶体管的SPICE(Simulation Program with Integrated Circuit Emphasis)等效模型,包含器件的主要光电特性,通过TCAD(Technology Computer Aided Design)仿真建立了模型中关键电学和光学参数的提取方法.基于所建立的高频光电晶体管的SPICE模型等效电路进行仿真,所得到的仿真结果能够完整描述光电晶体管的电学特性和光学特性,并验证了模型在器件模拟与电路应用上的可行性,表明本文所提出的SPICE模型和参数提取方法,对于基于高频光电晶体管的系统仿真,具有参考价值.     

一种环形栅LDMOS器件的宏模型

提出了一种适用于环形栅LDMOS器件的子电路宏模型。基于对环形栅LDMOS器件结构的分析,将环形栅LDMOS器件分为两个部分,一个是中间的条形栅MOS部分,使用常规的高压MOS模型；另一个是端头部分,为一个圆环形栅极MOS器件,采用了一个单独的模型。基于40 V BCD工艺的N沟道LDMOS器件进行模型提取与验证。结果表明,建立的宏模型具有较强的几何尺寸缩放功能,对于不同尺寸的器件都具有较高的拟合精度,并且模型能够兼容当前主要的商用电路仿真器Hspice和Spectre。     

数据挖掘在IGBT模型参数提取中的应用研究

针对半导体器件的SPICE模型参数提取,提出了一种正向处理技术。对于选定的器件和模型,大量运行不同模型参数组合下的SPICE仿真,获得各种不同的电特性曲线,形成超大规模的数据集。若通过测试得到了确实的测试数据,则通过数据挖掘和人工智能中的数据处理算法得到数据集中、最匹配的曲线项,直接给出模型参数的估计值。针对IGBT模型,通过批量仿真获得约15 k个数据,使用kNN算法和多元回归法对测试曲线构成的测试集进行了参数提取。结果表明,该方法能快速获取器件的模型参数,具有稳健性的优点。该方法为研究者对器件模型特性提供了有益的认识。     

DSOI总剂量效应模型及背偏调控模型

总剂量辐射效应会导致绝缘体上硅金属氧化物半导体场效应晶体管(DSOI MOSFET)器件的阈值电压漂移、泄漏电流增大等退化特性。由于背栅端口的存在,SOI器件存在新的总剂量效应加固途径,对于全耗尽SOI器件,利用正背栅耦合效应,可通过施加背栅偏置电压补偿辐照导致的器件参数退化。本文研究了总剂量辐照对双埋氧层绝缘体上硅金属氧化物半导体场效应晶体管(DSOI MOSFET)总剂量损伤规律及背栅偏置调控规律,分析了辐射导致晶体管电参数退化机理,建立了DSOI晶体管总剂量效应模拟电路仿真器(SPICE)模型。模型仿真晶体管阈值电压与实测结果≤6 mV,同时根据总剂量效应模型给出了相应的背栅偏置补偿模型,通过晶体管背偏调控总剂量效应SPICE模型仿真输出的补偿电压与试验测试结果对比,N型金属氧化物半导体场效应晶体管(NMOSFET)的背偏调控模型误差为9.65%,P型金属氧化物半导体场效应晶体管(PMOSFET)为5.24%,该模型可以准确反映DSOI器件辐照前后阈值特性变化,为器件的背栅加固提供参考依据。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks