非晶SmDyFeCoTi薄膜的磁和磁光特性

用射频磁控溅射法制备了一系列的（ＳｍＤｙＦｅＣｏ）１－ｘＴｉｘ薄膜,研究了Ｔｉ对非晶ＳｍＤＦｅＣｏ磁光薄膜磁、磁光特怀及其热稳定性的影响,结果表明,少量的Ｔｉ原子掺杂对非晶ＳｍＤｙＦｅＣｏ薄膜的磁和磁光特性影响小,但提高了它的磁和磁光特性的热稳定性。     

基于遗传算法的磁光记录薄膜的温度特性计算

介绍了计算磁光记录薄膜温度特性的基本原理,提出了RE-TM磁光记录薄膜温度特性计算的遗传算法.着重分析了算法实现中的关键步骤,包括适应函数的选取及定标、遗传算子的选取.实验证明该算法快速有效, 收剑性好.     

MATLAB在磁光记录薄膜温度特性研究中的应用

简要介绍了MATLAB软件及其主要特点,讨论了磁性材料的温度特性及其测量方法,重点分析了MATLAB在磁光记录薄膜温度特性研究中的应用：通过插值方法用已知实验数据点估算新的数据点,应用MATLAB数学函数求解磁光记录薄膜各功能层的居里温度。本文的具体实例表明,在磁学研究中使用MATLAB可以提高实验效率。     

磁光记录薄膜的偏振特性分析

光线入射至磁光记录薄膜表面时，由于其入射角和方位角不同，导致磁光薄膜的偏振特性有较大变化本文运用电磁场理论，对磁光记录薄膜偏振特性随入射角和方位角变化进行了分析。     

直接重写磁光记录薄膜磁特性测量的外推方法

当测量直接重写磁光记录薄膜的矫顽力,饱和磁化强度所需的外磁场和磁化强度超出了所用VSM的测量范围时,若不采用增加膜厚的,则无法直接测量薄膜的基本参数。本文提出一种简单、有效、可靠、精密的外推方法间接地测量出它的磁性参数,并得到它的完整的温度特性,为每层膜居里温度的估计提供可靠的依据。     

磁光记录材料读写老化实验系统

利用热磁记录方法,通过聚焦到微米级的激光束可将亚微米级的磁畴写入磁光记录薄膜中去。而利用极向克尔效应则可读出磁畴信息。其特点是记录介质可擦,重复使用。本文提出一种磁光记录材料读写老化试验系统。在脉冲重复频率约50kHz 范围内为磁光薄膜提供擦写用的高达数万安每米的连读正负极性的脉冲磁场,脉宽τ。约2μs。讨论了在电感负载上获得窄脉冲大电流的方法。利用二阶 RLC 网络其输出电流可获得较佳的效果。     

磁光记录薄膜擦写疲劳特性测试系统的研制

成功研制了磁光记录薄膜擦写疲劳特性测试系统。系统中利用串联谐振法 ,获得了重复频率为 1 k Hz、峰值磁场达 4 0 k A/m的高频双向脉冲磁场 ,同时采用除法式读出消除了读出激光功率波动     

磁光材料及其在磁光开关中的应用

磁光材料具有种类繁多、应用广泛的特点。随着激光、光纤通信等领域的发展,各类磁光材料如磁光玻璃、磁光薄膜、磁光光子晶体和磁性液体等的发展也极为迅猛,使得应用于全光网络中的磁光开关的实现与应用成为可能。主要介绍各类磁光材料的研究进展及磁光石榴石薄膜在磁光开关中的应用进展。     

小波分析方法在磁光记录薄膜基本特性分析中的应用

利用小波分析方法取代传统的傅立叶方法对微弱的磁光记录薄膜信号进行分解、滤波和局部信号处理,大大提高了测量的灵敏度,更好地分析了磁光记录薄膜的基本特性。     

小波分析在磁光记录薄膜磁畴图象处理中的应用

简单介绍了小波分析的特点,分析了图象的二维离散小波变换算法和基于小波的边缘检测算法,采用小波分析对磁畴图象进行图象增强、图象消噪及边缘检测等处理,较好地分析了磁畴的图象,准确地计算了磁畴的特性参数。     

溅射氩气压对TbFeCo薄膜磁和磁光性能的影响

研究了射频磁控溅射氩气压的变化对TbFeCo薄膜的磁和磁光特征的影响，以及不同溅射氩气压下TbFeCo薄膜退火后的特性，溅射氩气压的变化通过改变表面状态影响TbFeCo薄膜矫顽力和克尔角，另外，溅射氩气压的变化会影响被溅射原子轰击薄膜的速度，从而影响TbFeCo薄膜的垂直磁各向异性，矫顽力，磁光点尔效应。     

高矫顽力CoFe2O4薄膜的研究进展及矫顽力机理分析

矫顽力是钴铁氧体薄膜作为高密度磁记录以及磁光记录介质的重要指标.本文综述了激光脉冲沉积法和磁控溅射法制备的高矫顽力(大于400kA/m)钴铁氧体薄膜材料的国内外研究进展,并对其高矫顽力的产生机理进行了分析.     

[Fe/Pt]n多层膜中膜层结构对磁性能的影响

采用射频磁控溅射的方法,在玻璃基片上制备了不同膜层结构的[Fe/Pt]n多层膜,经不同温度真空热处理后,得到L10有序结构的FePt薄膜.实验结果表明,[Fe/Pt]n多层膜结构可以有效降低FePt薄膜的有序化温度,550℃退火30min后其平行膜面矫顽力可达320.3 kA/m;多层膜结构中,Pt层厚度与Fe层厚度相同时,矫顽力最大;Pt层和Fe层厚度相等且总厚度相同的情况下,Fe、Pt单层厚度越薄,有序化温度越低,且对应的矫顽力越大.     

Structure and Dielectric Properties of Heteroepitaxial PMNT Thin Films

Thin films of PbMg_1/3 Nb_2/3O₃(PMN) and (1 ? x)PbMg_1/3Nb_2/3O₃-xPbTiO₃ (PMNT) with x = 0.1 to 0.3 were epitaxially grown on (100) MgO and (100) SrTiO₃ (ST) substrates by magnetron sputtering. Typical film thickness was 300 to 900 nm. Pyrochlore free (001) PMN and (001) PMNT thin films were grown on the ST and MgO substrates at narrow temperature window of 500 ± 20°C. The cross-sectional TEM image showed that the sputtered PMN and PMNT thin films comprised high density and continuous structure. These sputtered films showed 3-dimensional epitaxy. The dielectric response of the sputtered thin films showed frequency dispersion similar to bulk relaxor-like behavior with a broad temperature anomaly. PMN-23PT (x = 0.23) thin films showed the temperature of maximum, Tm, at 80°C. The Tm coincided with that of corresponding bulk materials. However, the obtained maximum dielectric permittivity, ?_m, ?_m = 900 to 1000, was considerably smaller than that in the bulk. The relatively low dielectric permittivity was probably due to the presence of strained hetero-epitaxial layer having temperature independent dielectric properties.     

锡钛酸钡薄膜材料的研究现状

铁电薄膜是一类重要的功能材料,其中锡钛酸钡（BTS）薄膜由于具有较优异的介电性能而成为研究热点。本文综述了锡钛酸钡薄膜材料的制备方法和介电性能的研究现状,提出了研究中需要解决的问题。     

Study of Microwave Dielectric Properties of Perovskite Thin Films by Near-Field Microscopy

Perovskite thin film materials possess good dielectric properties, which vary with applied voltage, and have thus been thoroughly investigated for applications as thin film tunable microwave devices. However, the tunability of the thin film materials derived from the frequency response of the thin film devices suffers from ambiguity in extracting the true dielectric response of the thin film materials in microwave frequency regime. To circumvent such a difficulty, we investigated the dielectric properties of perovskite thin films by using a novel scanning evanescent microwave microscopy (SEMM). To extract the dielectric parameters from original microwave frequency response signal of SEMM probe, we perform a 3-dimensional (3D) finite element simulation to model the frequency behavior of the SEMM microwave probe. Dielectric images of the thin films with submicron resolution can be obtained by using such a near-field technique, which correlates very well with the morphology of the films examined by atomic force microscopy. Moreover, the dielectric images of dielectric thin films were compared to those of ferroelectric thin films in order to discuss the related dielectric mechanism of the materials.     

基片温度对Fe-N化合物薄膜制备及磁性能的影响

用X射线衍射仪和振动样品磁强计研究了双离子束溅射法制备的Fe—N薄膜的相组成和磁性能。结果表明,基片温度对不同基片上制得的薄膜的结构和磁性能有显著影响。基片温度为250℃和300℃时,在(111)硅片基片上制得无晶粒择优取向的单—γ″—Fe4N相;基片温度为160℃时,可在玻璃基片上制得具有(100)面晶粒取向的单一γ′—Fe4N相薄膜。薄膜磁性测量表明,与无晶粒择优取向的γ′—Fe4N相比较,具有(100)面晶粒取向的γ′—Fe4N相的矫顽力较低,易达到磁饱和,但二者的饱和磁化强度基本一致。     

Oxide Thin Films for Tunable Microwave Devices

Oxide thin films have been studied for frequency and phase agile electronics. The electric-field tuning of microwave devices employs ferroelectrics, while the Magnetic-field tuning uses ferrites. The critical material parameters for ferroelectric thin films are the tunability of the dielectric constant and the dielectric loss. This paper describes the current understanding of the fundamental mechanisms of these properties and the research efforts to improve them in ferroelectric thin films.     

Effect of Pyrolytic Film Thickness on the Texture Evolution of PZT Thin Films

This paper describes the effects of pyrolysis temperature and film thickness before annealing on the orientation and microstructure of the lead zirconate titanate (PZT) thin films prepared by chemical solution deposition method (CSD). Different thickness of the pyrolytic films were obtained by repeating deposition and pyrolysis with different times. The orientation and microstructures of the PZT thin films were characterized by X-ray diffractometry (XRD) and field-emission scanning electron microscope (SEM). The results show that the thickness of the pyrolytic films was the principal factor that affects the crystalline structures in PZT thin films.