Optical and mechanical properties of C,Si, Ge,and 3C–SiC determined by first-principles theory using Heyd–Scuseria–Ernzerhof functional

Accurately calculating the band gap and electronic state density distribution of crystals is significant in determining optical properties. First-principles calculations were based on the projector-augmented-wave method with the Perdew–Burke–Ernzerhof generalized gradient approximation functional, pure density functional theory (DFT) and Heyd–Scuseria–Ernzerhof (HSE) hybrid functional. Such calculations account for the lattice parameters, electronic structure, optical properties, and mechanical properties of materials, which include the diamond-C and zinc blende structure of Si, Ge, and 3C–SiC in this study. The results obtained with HSE calculations is more accurate than that of the pure DFT calculations, and consistent with previous experimental values. The band structure and density of states of Si, Ge, and 3C–SiC indicate that these materials are indirect band gap materials. Based on HSE calculation, the band gap of Si and 3C–SiC is in accordance with previous experimental values. The imaginary part of the analytical dielectric function, the refractive index, and the adsorption coefficient also matches previous experimental values. A corresponding relationship exists among the peak of the imaginary part of the analytical dielectric function, the refractive index, and the adsorption coefficient. The optical properties have a direct relationship with the distribution of the crystal band gap and electronic state density. The materials exhibit brittleness. Although 3C–SiC is not as hard and stiff as diamond, it is a better semiconductor than Si and Ge. The mechanical anisotropy of the four materials is inconspicuous. The anisotropy of diamond-C in terms of its Young's modulus is extremely inconspicuous.     

ECSCRM 96, Heraklion,Crete, Greece 6–9 October 1996

The first European Conference on Silicon Carbide and Related Materials (ECSCRM 96) followed about a year after the International Conference in Kyoto, Japan (ICSCRM '95), a tough act to follow indeed with 400 participants. Nevertheless with more than 140 participants and 92 accepted presentations ECSCRIM'96 was at the same levels as ICSCRM '91 and was another indication that SiC and GaN-related fields are among the hottest topics in compound semiconductor research.     

Comparison of 3C–SiC, 6H–SiC and 4H–SiC MESFETs performances

A comparative analysis of the main DC and microwave performances of MESFETs made of the commercially available silicon carbide polytypes 3C–SiC, 6H–SiC and 4H–SiC is presented. In this purpose, we have developed an analytical model that takes into account the basic material properties such as field dependent mobility, critical electric field, ionization grade of impurities, and saturation of the charge carrier velocity. For a better precision in appreciating device characteristics in the case of a short gate device, the influences of the gate length and parasitic elements of the structure, e.g. source and drain resistances, are considered too. Cut-off frequency f_T, the corresponding output power P_m and the thermal stability are also evaluated and compared with the available experimental data, revealing the specific electrical performances of MESFETs, when any of the three polytypes is used in device fabrication.     

IMC Growth at the Interface of Sn–2.0Ag–2.5Zn Solder Joints with Cu,Ni, and Ni–W Substrates

Growth of intermetallic compounds (IMC) at the interface of Sn–2.0Ag–2.5Zn solder joints with Cu, Ni, and Ni–W substrates have been investigated. For the Cu substrate, a Cu₅Zn₈ IMC layer with Ag₃Sn particles on top was observed at the interface; this acted as a barrier layer preventing further growth of Cu–Sn IMC. For the Ni substrate, a thin Ni₃Sn₄ film was observed between the solder and the Ni layer; the thickness of the film increased slowly and steadily with aging. For the Ni–W substrate, a thin Ni₃Sn₄ film was observed between the solder and Ni–W layer. During the aging process a thin layer of the Ni–W substrate was transformed into a bright layer, and the thickness of bright layer increased with aging.     

A compact 1–30 μH, 1–350 μF, 5–50 mΩ ESR compliant, 1.5% accurate 0.6 μm CMOS differential ΣΔ boost dc–dc converter

Emerging high-end portable electronics demand on-chip integration of high-performance dc–dc power supplies not only to save pin count, printed circuit board (PCB) real estate, and the cost of off-chip components but also to better regulate the point of load (PoL). In the face of a widely variable LC filter, however, integrating the frequency-compensation circuit is difficult without sacrificing stability performance, which is why integrated controller ICs only cater to relatively narrow LC ranges. While ΣΔ control addresses this LC compliance issue in buck dc–dc converters with high equivalent series resistance (ESR) output capacitors, it is not clear how it applies to ΣΔ boost converters. To that end, this paper discusses, analyzes, and experimentally evaluates a prototyped 0.6 μm CMOS differential ΣΔ boost converter. Experimental results verified the switching supply was stable across 1–30 μH, 1–350 μF, and 5–50 mΩ of inductance, capacitance, and ESR while keeping output voltage variations in response to 0.1–0.8 A load and 2.7–4.2 V line changes to less than ±1.5%, peak efficiency at 95%, and switching frequency variation to less than 27%.     

Polymer Chemistry for Haptics,Soft Robotics,and Human–Machine Interfaces

Progress in the field of soft devices—that is, the types of haptic, robotic, and human-machine interfaces (HRHMIs) in which elastomers play a key role—has its basis in the science of polymeric materials and chemical synthesis. However, in examining the literature, it is found that most developments have been enabled by off-the-shelf materials used either alone or as components of physical blends and composites. A greater awareness of the methods of synthetic chemistry will accelerate the capabilities of HRHMIs. Conversely, an awareness of the applications sought by engineers working in this area may spark the development of new molecular designs and synthetic methodologies by chemists. Several applications of active, stimuli-responsive polymers, which have demonstrated or shown potential use in HRHMIs are highlighted. These materials share the fact that they are products of state-of-the-art synthetic techniques. The progress report is thus organized by the chemistry by which the materials are synthesized, including controlled radical polymerization, metal-mediated cross-coupling polymerization, ring-opening polymerization, various strategies for crosslinking, and hybrid approaches. These methods can afford polymers with multiple properties (i.e., conductivity, stimuli-responsiveness, self-healing, and degradable abilities, biocompatibility, adhesiveness, and mechanical robustness) that are of great interest to scientists and engineers concerned with soft devices for human interaction.     

Leakage current,active power,and delay analysis of dynamic dual Vt CMOS circuits under P–V–T fluctuations

The leakage current, active power and delay characterizations of the dynamic dual V_t CMOS circuits in the presence of process, voltage, and temperature (P–V–T) fluctuations are analyzed based on multiple-parameter Monte Carlo method. It is demonstrated that failing to account for P–V–T fluctuations can result in significant reliability problems and inaccuracy in transistor-level performance estimation. It also indicates that under significant P–V–T fluctuations, dual V_t technique (DVT) is still highly effective to reduce the leakage current and active power for dynamic CMOS circuits, but it induces speed penalty. At last, the robustness of different dynamic CMOS circuits with DVT against the P–V–T fluctuations is discussed in detail.     

Microstructure,shear strength,and nanoindentation property of electroplated Sn–Bi micro-bumps

In order to investigate the microstructure and mechanical properties of small sized Sn–Bi bump, the eutectic Sn–Bi bumps with a diameter of 25 μm and a height of less than 20 μm after reflow were fabricated by electroplating and reflow. The reflow temperature of the Sn–Bi bumps was 170 °C, and the reflow times were varied from 5 to 20 min. The experimental results showed that a eutectic Sn–Bi composition was obtained by plating at a current density of 30 mA/cm² for 15 min. The average height and diameter of the bumps reflowed for 5 min were 16.1 ± 0.7 μm and 25.2 ± 0.7 μm, respectively. The microstructure of the reflowed bumps consisted of Sn- and Bi-rich phases. The thickness of the IMC of Cu₆Sn₅ increased from 1.17 to 2.25 μm with increasing reflow time from 5 to 20 min. The shear strength of the reflowed Sn–Bi bump increased with increasing reflow time, and reached approximately 11 gf at 15 and 20 min. The elastic modulus and hardness of eutectic Sn–Bi bump by nanoindentation were 53.5 and 0.43 GPa. Those of Cu₆Sn₅ were found to be 121.1 and 6.67 GPa.     

A 200-mA, 93% peak power efficiency, single-inductor, dual-output DC–DC buck converter

A single-inductor dual-output (SIDO) DC–DC buck converter is presented. The circuit uses only one (external) inductor to provide two independent output voltages ranging from 1.2 V to the power supply (2.6–5 V) with a maximum total output current of 200 mA. The proposed converter has been fabricated in a 0.35-μm p-substrate CMOS technology. Measurement results demonstrate that a peak power efficiency as high as 93.3% can be achieved. An automatic substrate bias switch technique, that cancels the body effect of the p-channel output power transistors, improves the converter power efficiency performance.     

Compact,Isolation Enhanced,Band-Notched SWB–MIMO Antenna Suited for Wireless Personal Communications

Herein, a Conductor Backed Co-Planar Waveguide fed, compact, slotted Multiple–Input–Multiple–Output or MIMO antenna having Super Wideband (SWB) response and tunable band-notching feature is presented. In addition, an improved method for cut-off frequency prediction of the antenna is formulated. A super wide frequency response from 01.21 to 34.0 GHz and notches at Wireless Local Area Networks or WLAN bands (04.92–05.83 GHz) and Worldwide Inter-operability for Microwave Access or WiMAX bands (03.30 GHz–03.70 GHz) are obtained. By fine tuning the dimensions of the Split Ring Resonator Structure introduced in the radiating element, band-notched characteristics centered at 05.50 GHz WLAN band is obtained. A second band notch having centre frequency at 03.50 GHz for the WiMAX band is obtained by the introduction of a Spiral Microstrip Defected Structure in the feeding segment. The antenna is 20?×?36?×?1 mm³ in dimension. Acceptable gain all through the functional bandwidth, excepting the notched bands makes the MIMO antenna a novel contender for SWB operations particularly for Wireless Personal Communications.

     

High-Density Atomic Fe–N4/C in Tubular,Biomass-Derived,Nitrogen-Rich Porous Carbon as Air-Electrodes for Flexible Zn–Air Batteries

Developing low-cost single-atom catalysts (SACs) with high-density active sites for oxygen reduction/evolution reactions (ORR/OER) are desirable to promote the performance and application of metal–air batteries. Herein, the Fe nanoparticles are precisely regulated to Fe single atoms supported on the waste biomass corn silk (CS) based porous carbon for ORR and OER. The distinct hierarchical porous structure and hollow tube morphology are critical for boosting ORR/OER performance through exposing more accessible active sites, providing facile electron conductivity, and facilitating the mass transfer of reactant. Moreover, the enhanced intrinsic activity is mainly ascribed to the high Fe single-atom (4.3 wt.%) loading content in the as-synthesized catalyst.Moreover, the ultra-high N doping (10 wt.%) can compensate the insufficient OER performance of conventional Fe N C catalysts. When as-prepared catalysts are assembled as air-electrodes in flexible Zn–air batteries, they perform a high peak power density of 101 mW cm⁻², a stable discharge–charge voltage gap of 0.73 V for >44 h, which shows a great potential for Zinc–air battery. This work provides an avenue to transform the renewable low-cost biomass materials into bifunctional electrocatalysts with high-density single-atom active sites and hierarchical porous structure.